# IGBT, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2470020/)

**URL**: https://novapart.co/products/IXYH50N65C3D1/igbt-50-a-21-v-600-w-650-to-247-3-pins
**SKU**: IXYH50N65C3D1
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.9800
**Stock**: 10+

## Description

DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 600W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2470020/)

## Advance Technical Information 

## **XPT[TM ] 650V IGBT GenX3[TM ] w/ Diode** 

Extreme Light Punch Through IGBT for 20-60 kHz Switching 

## **IXYH50N65C3D1** 

|**VCES**|**=   650V**|**=   650V**|
|---|---|---|
|**IC110**|**=   50A**|**=   50A**|
|**VCE(sat)**|**CE(sat)  **|**2.10V**|
|**tfi(typ)**|**=   26ns**|**=   26ns**|



## **TO-247 (IXYH)** 

|||||**TO-247 (IXYH)**|||
|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Maximum Ratings**||**TO-247 (IXYH)**|||
|**VCES**|TJ = 25°C to 175°C<br>650|650|V||||
|**VCGR**|TJ = 25°C to 175°C, RGE= 1M<br>650|650|V||||
|**VGES**<br>**VGEM**|Continuous<br>±20<br>Transient<br>±30|±20<br>±30|V<br>V|G<br>C E<br>Tab|Tab||
|**IC25**|TC = 25°C                                                                          132|= 25°C                                                                          132|A||||
|**IC110**<br>**IF110**<br>**ICM**|TC = 110°C<br>50<br>TC = 110°C<br>50<br>TC = 25°C, 1ms<br>250|50<br>50<br>250|A<br>A<br>A|G  =  Gate<br>C      =   Collector<br>E  =  Emitter<br>Tab  =   Collector|C      =   Collector<br>Tab  =   Collector||
|**IA**|TC = 25°C                                                                        25                   A|= 25°C                                                                        25                   A|= 25°C                                                                        25                   A||||
|**EAS**|TC = 25°C                                                                           400                 mJ|= 25°C                                                                           400                 mJ|= 25°C                                                                           400                 mJ||||
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 5|ICM= 100|A||||
|**(RBSOA)**Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @VCE  VCES||**Features**|||
|**tsc**<br>**(SCSOA)**|VGE= 15V, VCE= 360V, TJ= 150°C                            8             μs<br>RG= 82, Non Repetitive|= 150°C                            8             μs|= 150°C                            8             μs|Optimized for 20-60kHz Switching<br>Square RBSOA|||
|**PC**|TC = 25°C|600|W|Anti-Parallel Fast Diode<br>Avalanche Rated|||
|**TJ**||-55 ... +175|°C|Short Circuit Capability|||
|**TJM**||175|°C|International Standard Package|||
|**Tstg**||-55 ... +175|°C||||
|**TL**|Maximum Lead Temperature for Soldering|300|°C|**Advantages**|||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s|260|°C||||
|**Md**|Mounting Torque|1.13/10|Nm/lb.in|High Power Density<br>Extremely Rugged|||
|**Weight**||6                       g|6                       g|Low Gate Drive Requirement|||



- Optimized for 20-60kHz Switching 

- International Standard Package 

## **Applications** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>650                                      V|650                                      V<br>~~|~~|650                                      V|
|**VGE(th)**<br>IC<br>= 250A, VCE= VGE<br>3.5|6.0<br>~~||~~|6.0<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C<br>~~|~~|50<br>1.25   mA<br>~~||~~<br>~~_~~<br>~~|~~|50<br>A<br>1.25   mA|
|**IGES**<br>VCE = 0V, VGE=20V<br>~~|~~|<br>~~|~~|100    nA|
|**VCE(sat)**<br>IC<br>= 36A, VGE= 15V, Note 1<br>1.73          2.10       V<br>TJ= 150C<br>2.10                     V<br>~~|~~|1.73          2.10       V<br>2.10                     V<br>~~|_~~|1.73          2.10       V<br>2.10                     V|



- Power Inverters 

- UPS 

- Motor Drives 

- SMPS 

- PFC Circuits 

- Battery Chargers 

- Welding Machines 

- Lamp Ballasts 

- High Frequency Power Inverters 

© 2014 IXYS CORPORATION, All Rights Reserved 

DS100628(9/14) 

## **IXYH50N65C3D1** 

**Symbol Test Conditions Characteristic Values TO-247 Outline** (TJ = 25°C Unless Otherwise Specified) **Min. Typ.        Max. gfs** IC  = 36A, VCE = 10V, Note 1                        18                30 S **Cies** 2290 pF **Coes** VCE = 25V, VGE = 0V, f = 1MHz 230 pF **1       2       3** P **Cres** 50 pF **Q** 86 nC **g(on) Qge** IC = 36A, VGE = 15V, VCE = 0.5 • VCES 14 nC **Qgc** 40 nC **td(on)** 20 ns e **tri Inductive load, TJ = 25°C** 36 ns Terminals: 1 - Gate 2 - Collector **Eon** IC = 36A, VGE = 15V 0.80 mJ 3 - Emitted **td(off)** VCE = 400V, RG = 5 90 ns Dim. Min.MillimeterMax. Min.InchesMax. **tfi** Note 2 26 ns A 4.7 5.3 .185 .209 **Eoff** ~~po~~ 0.47     0.80   mJ AA12 2.22.2 2.542.6 .087.059 .102.098 **t** 19 ns b 1.0 1.4 .040 .055 **d(on) tErion** I **Inductive load, T** C = 36A, VGE = 15V **J = 150°C** 37         1.60 mJ ns bCb12 1.652.87.4 2.133.12.8 .065.113.016 .084.123.031 **td(off)** VCE = 400V, RG = 5 113 ns DE 20.8015.75 21.4616.26 .819.610 .845.640 **tfi** Note 2 32 ns e 5.20 5.72 0.205 0.225 **E** 0.70 mJ L 19.81 20.32 .780 .800 **off** L1 4.50 .177 **R** 0.25 °C/W P 3.55 3.65 .140 .144 **thJC** Q 5.89 6.40 0.232 0.252 **R** 0.21 °C/W **thCS** ~~=~~ R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC ~~IIE~~ **Reverse  Diode (FRED) Symbol Test Conditions Characteristic Values** (TJ = 25°C Unless Otherwise Specified) **Min.    Typ.       Max. VF** IF = 30A, VGE = 0V, Note 1 2.5     V TJ = 150°C          1.35                       V **tIrrrr** TI                                                              T-diF   = 30A, VF/dt = 500A/μs, VGE = 0V,R = 400V JJ  = 150°C           20                    A= 150°C          115 ns **R** ~~—a~~ **thJC** 0.60 °C/W Notes: 1.  Pulse test, t  300μs, duty cycle, d  2%. 2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

**ADVANCE TECHNICAL INFORMATION** The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. e ~~e~~ IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXYH50N65C3D1** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
280<br>70 ERR VGE = 15V LL/ 7 | VGE = 15V  14V<br>            13V<br>            12V 10V 240<br>60 TC) 11V Lee 13V<br>200<br>50 Tt ps =f<br>9V 12V<br>160<br>40 I fe) Leo<br>11V<br>120<br>30 8V<br>Toe | 10V<br>20 LL 80 pee<br>9V<br>10 nD  COUWWwe 7V 40 OER<br>8V<br>6V 7V<br>0 2 ZAee ee 0 ee<br>0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30<br>VCE (V) VCE (V)<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150ºC<br>Junction Temperature<br>2.0<br>70 V GE = 15V  10V VGE = 15V<br>            13V 1.8<br>60             11V I  C = 72A<br>9V 1.6<br>50 TT GZ oot TT TTT<br>TS ff PP eae<br>1.4<br>40 8V<br>i? Zee ee ae I C = 36A<br>1.2<br>30 GO ee<br>1.0<br>20<br>7V<br>getty) EL eer ty<br>10 | Ae =f 0.8 I C = 18A<br>6V<br>0 Se? .aneeeeee 5V 0.6 SEELEP<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ (ºC)<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br> Gate-to-Emitter Voltage<br>5.0 100<br>4.5 PTT} [tT ]oof fF TJ  = 25ºC  2 90 ee ee ee ee ee<br>80<br>4.0 See<br>70<br>3.5 Oe<br>60<br>3.0 4-H I  C = 72A  50 ee ee 7 ee<br>2.5 TEL UPL | | | 40 Ft TJ = 150ºC  VV AT<br>30            25ºC - 40ºC<br>2.0 36A<br>AACE EES 20 SES Ae<br>1.5 6 10 ee<br>18A<br>1.0 | | | 7 [-- ff_ 0 eee ae<br>7 8 9 10 11 12 13 14 15 4 5 6 7 8 9 10<br>VGE (V) VGE (V)<br> (A)IC  (A)IC<br> (A)<br>IC  - Normalized<br>CE(sat)<br>V<br> (V)  (A)<br>VCE IC<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

## **IXYH50N65C3D1** 

**Fig. 7. Transconductance** 

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Fig. 8. Gate Charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
45 16<br>T J = - 40ºC<br>40 “COCCI 14 Foo  VCE = 325V<br> I  C = 36A<br>35 TTT SSE 25ºC 12  I G = 10mA     :<br>30 150ºC 10<br>25 Poe Ae<br>8<br>20 WE EELEER FERee<br>6<br>15 TWReEeeeeee,| 6 6L-v<br>4<br>10<br>50 FaPTT} 20 Ae<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90<br>IC (A) QG (nC)<br> (S)  (V)<br> f s GE<br>g V<br>**----- End of picture text -----**<br>


**Fig. 9. Capacitance** 

**Fig. 10. Reverse-Bias Safe Operating Area** 

**==> picture [530 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
10,000<br>f = 1 MHz  100<br>oo C ies ee<br>80<br>1,000<br>ett ET Peer<br>60<br>C oes<br>MERE TTP<br>40<br>100<br>WCNeE +H ft ff fe<br>20 TJ = 150ºC<br>C res RG = 5Ω<br>dv / dt < 10V / ns<br>10 CPRREE]PTT) 0 SEEELT<br>0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700<br>Fig. 11. Maximum Transient Thermal Impedance<br>VCE (V) 1 VCE (V)<br>Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance (IGBT)<br>1000 0.4 a a sss<br>VCE(sat) Limit<br>100<br>0.1<br>25µs<br>10<br>100µ s<br>TWSYS<br>1 (adi 1ms<br> TJ = 175ºC<br> T C  = 25ºC    10m s<br> Single Pulse<br>DC<br>0.1 NG 0.01<br>FL aan Ses<br>1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1<br>VDS (V) Pulse Width (s)<br> (A)<br>IC<br>Capacitance (pF)<br> - ºC / W<br> - AmperesID Z(th)JC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXYH50N65C3D1** 

**==> picture [527 x 635] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Inductive Switching Energy Loss vs. Fig. 14. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>3.2 8 2.4 6<br>2.8  E off      E on  - - - - 7  Eoff       Eon - - - -<br> TJ = 150ºC ,  VGE = 15V 2.0  R G  = 5Ω ,   V GE  = 15V 5<br>2.4  VCE = 400V         6  VCE = 400V<br>oe<br>1.6 4<br>2.0 I  C  = 72A 5<br>1.6 Seepfoe 4 1.2 Poa He 3<br>Pt tery LLL ee<br>1.2 3<br>er 0.8 TJ = 150ºC oy ee 2<br>0.8 2<br>pT I  C  = 36A 0.4 ET 1<br>0.4 1<br>ad same MSE ee A<br>TJ = 25ºC<br>0.0 Sn 0 0.0 ce 0<br>5 10 15 20 25 30 35 40 45 50 55 15 20 25 30 35 40 45 50 55 60 65 70 75<br>RG (Ω) IC (A)<br>Fig. 15. Inductive Switching Energy Loss vs. Fig. 16. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>2.8 7 120 480<br>2.4  Eoff      Eon - - - - 6  t f i td(off) - - - -<br>AY  RG = 5Ω ,  VGE = 15V TEEEEEC 100 pao  TJ = 150ºC,  VGE = 15V 400<br>2.0  VCE = 400V       5  VCE = 400V<br>80 320<br>1.6 HO 4 ee<br>I C = 72A 60 I C = 72A 240<br>1.2 3<br>a 40 ee I C = 36A 160<br>0.8 pepo 2 Le<br>0.4 OTL 1 20 80<br>I C = 36A<br>0.0 eae 0 0 EEEECEEee 0<br>25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55<br>TJ (ºC) RG (Ω)<br>Fig. 17. Inductive Turn-off Switching Times vs.  Fig. 18. Inductive Turn-off Switching Times vs.<br>Collector Current Junction Temperature<br>90 200 120 160<br>80  t f i t d(off) - - - - 180  t f i t d(off) - - - -<br>TESTO  RG = 5Ω ,  VGE = 15V 100 $e  R G  = 5Ω ,  V GE  = 15V 140<br>70  VCE = 400V            160  VCE = 400V<br>esses 80 ot cette 120<br>60 140<br>Pee | ae SESERSEAEREESEES=E=e==—=<br>50 T J  = 150ºC 120 60 I C = 72A 100<br>40 ee ae 100 Zoe bo<br>40 80<br>I C = 36A<br>30 CRETE TJ elt = 25ºC 80 Ba es Oa<br>20 60<br>20 ee 60<br>10 TOL 40 0 PEELE 40<br>EEE EET<br>15 20 25 30 35 40 45 50 55 60 65 70 75 25 50 75 100 125 150<br>IC (A) TJ (ºC)<br>E<br>E on<br> (mJ) on  (mJ)<br>Eoff  (mJ) Eoff  (mJ)<br>E t<br> (mJ) on  (ns)  d(off)<br>Eoff  (mJ) t f i<br> (ns)<br>t t<br> (ns) d(off)  (ns)  d(off)<br>t f i tf i<br> (ns)  (ns)<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

## **IXYH50N65C3D1** 

**==> picture [530 x 418] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Inductive Turn-on Switching Times vs. Fig. 20. Inductive Turn-on Switching Times vs.<br> Gate Resistance Collector Current<br>180 90 120 31<br>160 Pee  t r i t d(on) - - - -   80 100 EEE  t r i td(on) - - - -  28<br>140  TJ = 150ºC,  VGE = 15V 70  RG = 5Ω ,  VGE = 15V<br> V CE = 400V    V CE  = 400V<br>pees<br>120 60 80 25<br>100 50<br>I C = 72A<br>60 TJ = 25ºC 22<br>80 Preece 40 |  oro<br>60 a I  ee C = 36A 30 40 eeeeeeccca 19<br>ae TE er TJ = 150ºC<br>40 20<br>20 16<br>20 ee 10 ee<br>0 SEPP 0 0 EREEEEEEEE 13<br>5 10 15 20 25 30 35 40 45 50 55 15 20 25 30 35 40 45 50 55 60 65 EE 70 75<br>RG (Ω) IC (A)<br>Fig. 21. Inductive Turn-on Switching Times vs.<br>Fig. 22. Maximum Peak Load Current vs. Frequency<br>Junction Temperature<br>140 25 100<br> t r i td(on) - - - -   90<br>120 24<br> RG = 5Ω ,  VGE = 15V<br>80<br> VCE = 400V<br>100 TEE 23 Se<br>70<br>ee<br>80 I  C  = 72A 22 60<br>60 sates Os eearas eect ssiz 21 50 PE  TJ = 150ºC SEH Triangular Wave<br>PEEEEEEECEEEEEEEEEEEE 40 a  TC = 75ºC ae<br>40 20  VCE = 400V<br>30  V GE  = 15V<br>20 HERBESEEHENE) I C = 36A 19 20 =H  RG = 5Ω FEE Square Wave as<br> Duty Cycle = 0.5<br>0 Pee 18 10<br>25 SRS 50 PEPE 75 100 PEEP 125 Eee 150 10 pLLLL [SESS] 100 1000<br>TJ (ºC) fmax (kH)<br>t (ns) r i  d(on)t t (ns)r i  d(on)t<br> (ns)<br> (ns)<br> d(on)t<br> (ns)  (A)<br>tr i IC<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXYH50N65C3D1** 

**Fig. 23. Diode Forward Characteristics** 

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**----- Start of picture text -----**<br>
Fig. 24. Reverse Recovery Charge vs. -diF/dt<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
120 2.0<br>TVJ  = 150ºC<br>100 TOLL) 1.8 Sooo V R   = 400V<br>IF = 60A<br>80 ee 2 1.6<br>T J = 150ºC<br>30A<br>60 TJ = 25ºC  1.4<br>40 AyTTL V TY 1.2 CTATOTET<br>15A<br>20 1.0<br>7) EEE<br>0 Tee) 0.8 Peo<br>0 0.5 1 1.5 2 2.5 3 3.5 200 300 400 500 600 700 800 900 1000 1100 1200<br>VF (V) -diF/ dt (A/µs)<br>Fig. 25. Reverse Recovery Current vs. -diF/dt Fig. 26. Reverse Recovery Time vs. -diF/dt<br>3230 180<br>30 | TVJVJ tS   = 150ºC I F = 60A | | [ | ff T VJ —   = 150ºC<br>28 VR = 400VR = 400V = 400V 30A 160 VR = 400V<br>26 15A<br>140<br>24 | | | | Lee NJ<br>22 I F = 60A<br>HE 120 PREECE<br>20<br>| | fw, | | ft SP< 30A<br>1816 PTAaa rt 100 TNEELE<br>15A<br>eee ee SLOT<br>14 80<br>12 2<br>10 60<br>200 300 400 500 600 700 800 900 1000 1100 1200 200 300 400 500 600 700 800 900 1000 1100 1200<br>diF/dt (A/µs)F/dt (A/µs)/dt (A/µs) -diF/dt (A/µs)<br> (A)  (µC)<br>IF QRR<br>(ns)<br> (A)<br>IRRRR tRR<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3230 | TVJVJ tS   = 150ºC I F = 60A | | [ | ff<br>VR = 400VR = 400V = 400V 30A<br>28<br>26 15A<br>24 | | | | Lee<br>22<br>HE<br>20<br>| | fw, | | ft<br>161816 PTAaa eee ee<br>14<br>12 2<br>10<br>200 300 400 500 600 700 800 900 1000 1100 1200<br>diF/dt (A/µs)F/dt (A/µs)/dt (A/µs)<br>Fig. 27. Dynamic Parameters QRR, IRR vs.<br>Junction Temperature<br>1.2<br> VR =  400V<br>1<br> I F = 30A<br>TTT  -dIF/dt = 500 A/µs<br>0.8<br>La<br>0.6<br>TA<br>0.4 K F  I RR<br>rT<br>0.20 KF QRR  TTTen<br>0 20 40 60 80 100 120 140 160<br>TJ (ºC)<br> (A)<br>IRRRR<br>F<br>K<br>**----- End of picture text -----**<br>


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Fig. 28. Maximum Transient Thermal Impedance (Diode)<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width (s)<br> (ºC / W)<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

IXYS REF: IXY_50N65C3D1(5D) 9-03-14 



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