# IGBT, 290 A, 1.22 V, 830 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3996588/)

**URL**: https://novapart.co/products/IXYH120N65A5/igbt-290-a-122-v-830-w-650-to-247-3-pins
**SKU**: IXYH120N65A5
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €5.9900
**Stock**: 50+
**Lead Time**: 204 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | XPT GenX5 Series |
| Power Dissipation | 830W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 290A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.22V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3996588/)

## **XPT[TM ] 650V GenX5[TM ] IGBT** 

Extreme Light Punch Through IGBT for up to 10kHz Switching 

## **IXYH120N65A5** 

**V =   650V CES I =   120A C110 V**  **1.35V CE(sat) t =   160ns fi(typ) TO-247 (IXYH)** 

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|||||||||
|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Maximum Ratings|
|G|
|VCES|TJ|= 25°C to 175°C|650|V|C|E|C (Tab)|
|VCGR|TJ|= 25°C to 175°C, RGE = 1M|650|V|
|VGES|Continuous|±20|V|G  = Gate           C      =  CollectorE  = Emitter       Tab   =  Collector|
|VGEM|Transient|±30|V|
|IC25|TC     = 25°C (Chip Capability)                                                 290|A|
|ILRMS|Terminal Current Limit                                                       160|A|
|IC110|TC|= 110°C|120|A|
|ICM|TC|= 25°C, 1ms|790|A|
|SSOA|VGE  = 15V, TVJ = 150°C, RG = 3|ICM = 240|A|Features|
|(RBSOA)|Clamped Inductive Load                                             VCE||VCES|
|PC|TC|= 25°C|830|W||Optimized for Low Frequency High|
|Current Switching|
|TJ|-55 ... +175|°C||High Surge Current Capability|
|TJM|175|°C||Square RBSOA|
|Tstg|-55 ... +175|°C||International Standard Package|
|TL|Maximum Lead Temperature for Soldering|300|°C|
|1.6 mm (0.062 in.) from Case for 10s|
|Advantages|
|Md|Mounting Torque|1.13 / 10        Nm/lb.in||High Power Density|
|Weight|6                   g||

**----- End of picture text -----**<br>


- Optimized for Low Frequency High 

- Current Switching 

- International Standard Package 

- Low Gate Drive Requirement 

## **Applications** 

- Power Inverters 

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**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Symbol|Test Conditions                                           Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.        Typ.        Max.|
|BVCES|IC     = 250A, VGE  = 0V|650                                      V|—|
|VGE(th)|IC|= 250A, VCE = VGE|3.7|5.8|V|
|ICES|VCE|= VCES,|VGE = 0V|5|A|
|TJ = 150C|_|750|A|
|IGES|VCE|= 0V, VGE = 20V|—|100    nA|
|VCE(sat)|IC|= 75A, VGE = 15V, Note 1|1.22          1.35      V|
|TJ = 150C|1.30                         V|

**----- End of picture text -----**<br>


- UPS 

- Motor Drives 

- SMPS 

- PFC Circuits 

- Battery Chargers 

- Welding Machines 

- Lamp Ballasts 

©2021 Littelfuse, Inc. 

DS101026B(7/21) 

## **IXYH120N65A5** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**||**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                            48                 80<br>~~=~~||= 10V, Note 1                            48                 80<br>~~=~~|S|
|**Cies**<br>5060<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>255<br>**Cres**<br>190<br>~~=~~||5060<br>255<br>190<br>~~=~~|pF<br>pF<br>pF|
|**Qg(on)**<br>314<br>**Qge**IC= 90A, VGE= 15V, VCE= 0.5 • VCES<br>41<br>**Qgc**<br>157<br>~~=~~||314<br>41<br>157<br>~~=~~|nC<br>nC<br>nC|
|**td(on)**<br>45<br>**tri**<br>42<br>**Eon**<br>1.25<br>**td(off)**<br>370<br>**tfi**<br>160<br>**Eoff**<br>3.20             mJ<br>**Inductive load, TJ = 25°C**<br>IC= 60A, VGE= 15V<br>VCE= 400V, RG= 3<br>Note 2<br>~~Po~~||45<br>42<br>1.25<br>370<br>160<br>3.20             mJ<br>~~Po~~|ns<br>ns<br>mJ<br>ns<br>ns<br>3.20             mJ|
|**t**<br>33<br>~~pe~~||33<br>~~pe~~||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**<br>~~pe~~|33<br>42<br>2.30<br>360<br>290<br>4.70<br>**Inductive load, TJ = 150°C**<br>IC= 60A, VGE= 15V<br>VCE= 400V, RG= 3<br>Note 2<br>~~pe~~|33<br>42<br>2.30<br>360<br>290<br>4.70<br>~~pe~~|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.21<br>~~pe~~||0.18 °C/W<br>0.21<br>~~pe~~|0.18 °C/W<br>0.21C/W|



Notes: 

1.  Pulse test, t  300µs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXYH120N65A5** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br>


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240<br>VGE = 15V  800<br>13V 10V<br>200 12V11V              700 VGE = 15V<br>9V<br>600 14V<br>160<br>13V<br>fe 500 FE<br>12V<br>120 VYa 2<br>8V 400 11V<br>Le = === =-—<br>10V<br>80 300<br>_ VY SssSces===— 9V<br>7V 200<br>8V<br>40<br>fF 100 ° 2a=eSSe==—<br>7V<br>6V<br>0 0 6V<br>0 0.4 0.8 1.2 1.6 2 2.4 0 2 4 6 8 10 12 14 16 18 20 22<br>PAR |  GEESE<br>VCE - Volts VCE - Volts<br>Fig. 3. Output Characteristics @ TJ = 150 [o] C Fig. 4. Dependence of VJunction TemperatureCE(sat) on<br>240 1.8<br>VGE = 15V<br>13V 10V VGE = 15V<br>200 12V V Za 1.6<br>11V<br>I  C = 240A<br>9V<br>160 1.4<br>120 1.2<br>8V<br>fe I  C = 120A<br>80 7V 1.0<br>\ Za<br>40 0.8<br>6V I  C = 60A<br>2 5V<br>0 0.6<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br>Gate-to-Emitter Voltage<br>4.0 240<br>3.6 TJ  = 25 [o] C  VCE = 10V TJ = - 40 [o] C<br>APE 200 eS 25 [o] C Wy<br>150 [o] C<br>3.2<br>160<br>2.8 HL feeee<br>2.4 I  C = 240A  120<br>2.0<br>80<br>120A<br>1.6<br>[KY<br>40<br>1.2<br>60A<br>0.8 0<br>6 7 8 9 10 11 12 13 14 15 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC I -C<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts Amperes<br>CE  -<br>V IC<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXYH120N65A5** 

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Fig. 7. Transconductance Fig. 8. Gate Charge<br>120 16<br>100 VCE = 10V TJ = - 40 [o] C 14 VI CCE= 120A = 325V<br>S CS PCE I G = 10mA<br>12<br>7 [te ee eeae<br>80 25 [o] C<br>10<br>60 8<br>150 [o] C<br>6<br>40<br>4<br>20 |, PEE EEE<br>2<br>0 PoCeee 0<br>co ARR<br>0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 280<br>240<br>Cies<br>FE 200<br>160<br>1,000<br>NTT) 120 Et<br>Coes 80<br>TJ = 150 [o] C<br>RG = 3Ω<br>40 dv / dt < 10V / ns<br>f = 1 MHz  cea<br>Cres<br>100 S ERS 0 Pe<br>0 5 10 15 20 25 30 35 40 200 300 400 500 600 700<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.4<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>Siemens  - Volts<br> - GE<br>f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>K / W<br> -<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

## **IXYH120N65A5** 

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Fig. 13. Inductive Switching Energy Loss vs.<br>Collector Current<br>**----- End of picture text -----**<br>


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Fig. 12. Inductive Switching Energy Loss vs.<br>Gate Resistance Collector Current<br>12 10 10 5<br>11 Eoff Eon  9 9 Eoff Eon 4.5<br>TJ = 150 [o] C ,  VGE = 15V 8 RG = 3Ω ,VGE = 15V 4<br>10 VCE = 400V         8 VCE = 400V<br>FR EE 7 a ==5=5==. 3.5<br>9 7<br>oH I C = 100A SEase= 6 sce 3<br>8 6 TJ = 150 [o] C<br>5 2.5<br>SEEacaee Seto ee<br>7 5<br>PEepaee ey 4 Ae 2<br>6 4 TJ = 25 [o] C<br>3 1.5<br>5 3<br>2 1<br>as SERSEEEETEEE I  C =  = 60A Fatsi—aereeneee<br>4 2 1 0.5<br>3 act 1 0 Bee 0<br>2 rE 4 6 8 10 12 FREES 14 16 18 20 20 == 30 40 50 60 70 Sea 80 90 100<br>RG - Ohms IC - Amperes<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.<br>Junction Temperature Gate Resistance<br>10 5.5 340 1000<br>9 Eoff P E ITT on 5 320 S t f i an esenn td(off) PTD 5 900<br>RG = 3Ω ,VGE = 15V TJ = 150 [o] C,  VGE = 15V<br>8 VCE = 400V       4.5 VCE = 400V<br>300 800<br>7 D i sssstststse:: 4 a see22<br>I C = 100A 280 700<br>6 3.5<br>I  C = 60A<br>5 seressaeseieeetoce 3 260 ssereseene; Cae[_— 600<br>4 2.5<br>240 500<br>I  C = 100A<br>3 2<br>I C = 60A 220 400<br>2 1.5<br>200 300<br>1 1<br>0 0.5 180 200<br>25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>Sasi] | EEEEEEE<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br>Collector Current Junction Temperature<br>500 600 380 420<br>450 t f i td(off) 560 340 t f i td(off) 400<br>RG = 3Ω ,VGE = 15V RG = 3Ω ,  VGE = 15V<br>400 VCE = 400V        520 300 VCE = 400V       380<br>350 San eones e 480 260 H =E I C = 60A 360<br>300 440<br>TJ = 150 [o] C 220 340<br>250 400<br>180 320<br>200 TJ = 25 [o] C 360 140 I C = 100A 300<br>150 SS 320 a<br>10050 = 280240 10060 == 280260<br>20 30 40 50 60 70 80 90 100 25 50 75 100 125 150<br>Beer) = Fee<br>IC - Amperes TJ - Degrees Centigrade<br>on -E on -E<br>MilliJoules -  - MilliJoules<br>off off<br>E MilliJoules E MilliJoules<br>t<br>E<br>on  d(off)<br> -<br> - MilliJoules<br>off - Nanoseconds<br>E MilliJoules t f i<br>- Nanoseconds<br>t  d(off)t<br>d(off)<br>-<br> - Nanoseconds  - Nanoseconds<br>tf i t f i<br>- Nanoseconds<br>Nanoseconds<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXYH120N65A5** 

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Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br>Gate Resistance Collector Current<br>160 90 100 70<br>140 Tt r iJ = 150 [o] C,  VGEtd(on)= 15V 80 Rt r iG = 3Ω ,  VGEtd(on)= 15V<br>VCE = 400V   80 VCE = 400V  60<br>120 70<br>60 50<br>100 60<br>I  C = 100A<br>o e E E<br>80 50 40 TJ = 25 [o] C 40<br>60 40<br>eae eee<br>I  C = 60A 20 30<br>40 30<br>TJ = 150 [o] C<br>20 eereretey)seeeegegee 20 0 eee 20<br>2 4 6 8 10 12 14 16 18 20 20 30 40 50 60 70 80 90 100<br>RG - Ohms IC - Amperes<br>Fig. 20. Inductive Turn-on Switching Times vs. Fig. 21. Maximum Peak Load Current vs. Frequency<br>Junction Temperature<br>80 Li itt 70 120<br>t r i td(on)<br>RG = 3Ω ,  VGE = 15V 100<br>70 VCE = 400V       60<br>80<br>60 50<br>I  C = 100A<br>e Seett 60 :7<br>Triangular Wave<br>50 40<br>TJ = 150ºC<br>I C = 60A 40 TVCCE= 75ºC = 400V Square Wave<br>40 30 VGE = 15V<br>20 RG = 3Ω<br>icine Duty Cycle = 0.5 <<br>30 N 20 S 0<br>25 50 75 100 125 150 10 40 100 400<br>TJ - Degrees Centigrade fmax - KiloHertz<br> d(on)t-  d(on)t<br> - Nanoseconds Nanoseconds<br>t r i t r i -<br>Nanoseconds - Nanoseconds<br> d(on)t<br>-<br>Nanoseconds<br>-  - Amperes<br>t r i IC<br>Nanoseconds<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS REF: IXY_120N65A5 (608-CY42) 10-12-20 

**IXYH120N65A5** 

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TO-247 Outline<br>ete]a pe SE , tate<br>+f—_ Sn<br>re OoOME A AS)<br>L<br>T<br>:<br>1 - Gate<br>2,4 - Collector<br>3 -Emitter<br>**----- End of picture text -----**<br>


Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

©2021 Littelfuse, Inc. 



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