# TRANSISTOR, IGBT, 600V, 550A, PLUS247

![Product image](https://novapart.co/image/farnell:3771281/)

**URL**: https://novapart.co/products/IXXX300N60B3/transistor-igbt-600v-550a-plus247
**SKU**: IXXX300N60B3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €18.0200
**Stock**: 10+
**Lead Time**: 114 days (indicative)

## Description

Continuous Collector Current:550A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:2.3kW; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Ope 03AH2005

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | XPT GenX3 Series |
| Power Dissipation | 2.3kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | PLUS247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 550A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771281/)

## Advance Technical Information 

## **XPT[TM ] 600V IGBTs GenX3[TM]** 

Extreme Light Punch Through IGBT for 10-30kHz Switching 

## **IXXK300N60B3 IXXX300N60B3** 

**V =   600V CES I =   300A C110 V ≤ 1.6V CE(sat) t =   95ns fi(typ)** 

## **TO-264 (IXXK)** 

|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|||
|---|---|---|---|---|---|---|---|
|~~OO~~||||||||
|**VCES**<br>**VCGR**|TJ = 25°C to 175°C<br>TJ = 25°C to 175°C, RGE= 1MΩ|600<br>600|600<br>600|600<br>600||V<br>V||
|**VGES**|Continuous<br>±20|±20|±20|±20||V||
|**VGEM**|Transient<br>±30|±30|±30|±30||V|**PLUS247 (IXXX)**|
|**IC25**|TC= 25°C  (Chip Capability)                                               550|= 25°C  (Chip Capability)                                               550|= 25°C  (Chip Capability)                                               550|= 25°C  (Chip Capability)                                               550|A|A|**PLUS247 (IXXX)**|
|**ILRMS**|Leads Current Limit                                                          160                A|Leads Current Limit                                                          160                A|Leads Current Limit                                                          160                A|Leads Current Limit                                                          160                A|Leads Current Limit                                                          160                A|Leads Current Limit                                                          160                A||
|**IC110**|TC = 110°C (Chip Capability)                                            300|= 110°C (Chip Capability)                                            300|= 110°C (Chip Capability)                                            300|= 110°C (Chip Capability)                                            300||A||
|**ICM**|TC = 25°C, 1ms<br>1140|1140|1140|1140||A||
|**IA**<br>**EAS**|TC = 25°C                                                                        100                   A<br>TC = 25°C                                                                                   500                   mJ|= 25°C                                                                        100                   A<br>= 25°C                                                                                   500                   mJ|= 25°C                                                                        100                   A<br>= 25°C                                                                                   500                   mJ|= 25°C                                                                        100                   A<br>= 25°C                                                                                   500                   mJ|= 25°C                                                                        100                   A<br>= 25°C                                                                                   500                   mJ|= 25°C                                                                        100                   A<br>= 25°C                                                                                   500                   mJ||
|**SSOA**<br>**(RBSOA)**Clamped Inductive Load                                     @V|VGE= 15V, TVJ= 150°C, RG= 1Ω<br>Clamped Inductive Load                                     @V|ICM= 600<br>Clamped Inductive Load                                     @VCE ≤ VCES||||A|G  = Gate<br>C  = Collector|
|**tsc**|VGE= 15V, VCE= 360V, TJ= 150°C                          10             μs|= 150°C                          10             μs|= 150°C                          10             μs|= 150°C                          10             μs|= 150°C                          10             μs|= 150°C                          10             μs||
|**(SCSOA)**|RG= 10Ω, Non Repetitive|||||||
|**PC**|TC = 25°C|||2300||W|**Features**|
|**TJ**<br>**TJM**<br>**Tstg**|||-55 ... +175<br>175<br>-55 ... +175|||°C<br>°C<br>°C||
|**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>1.6 mm (0.062in.) from Case for 10s|||300<br>260|°C|°C<br>°C||
|**Md**|Mounting Torque  (TO-264)<br>1.13/10|1.13/10|1.13/10|1.13/10|Nm/lb.in.|||
|**FC**<br>**Weight**|Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.<br>TO-264<br>10|Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.<br>10||Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.<br>10|Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.|Mounting Force    (PLUS247)                      20..120 /4.5..27              N/lb.<br>g|**Advantages**|
||PLUS247<br>6|6|6|6|6|6g||
|**Symbol**|**Test Conditions                                          Characteristic Values**|**Test Conditions                                          Characteristic Values**||||||
|(TJ= 25°C, Unless Otherwise Specified)|C, Unless Otherwise Specified)**Min.        Typ.      Max.**|**Min.        Typ.      Max.**||**Min.        Typ.      Max.**|**Min.        Typ.      Max.**||**Applications**|
|**BVCES**<br>I<br>**VGE(th)**<br>**ICES**<br>**IGES**|IC= 250μA, VGE= 0V<br>600                                      V<br>IC<br>= 250μA, VCE= VGE<br>3.0<br>VCE = VCES, VGE= 0V<br>TJ= 150°C<br>VCE = 0V, VGE=±20V|600                                      V<br>3.0|600                                      V<br>5.5<br>V<br>25<br>μA<br>2.5    mA<br>±200    nA<br>~~|~~<br>;<br>~~|pf:~~<br>~~|~~|||||
|**VCE(sat)**|IC<br>= 100A, VGE= 15V, Note 1|1.3          1.6       V|1.3          1.6       V|1.3          1.6       V|1.3          1.6       V|1.3          1.6       V||
||TJ= 150°C|1.4                     V|1.4                     V|1.4                     V|1.4                     V|1.4                     V||



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**----- Start of picture text -----**<br>
G<br>C<br>E<br>Tab<br>PLUS247 (IXXX)<br>G<br>G<br>C<br>Tab<br>E<br>G  = Gate E       =  Emitter<br>C  = Collector Tab   =  Collector<br>**----- End of picture text -----**<br>


## **Features** 

Optimized for 10-30kHz Switching Square RBSOA International Standard Packages Avalanche Rated Short Circuit Capability High Current Handling Capability 

## **Advantages** 

High Power Density Low Gate Drive Requirement 

## **Applications** 

Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 

© 2012 IXYS CORPORATION, All Rights Reserved 

DS100503(10/12) 

## **IXXK300N60B3 IXXX300N60B3** 

|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**<br>~~—_~~|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**<br>~~—_~~|**Typ.        Max.**<br>~~—_~~|**Typ.        Max.**|
|---|---|---|---|
|**gfs**IC= 60A, VCE= 10V, Note 1                         30               50<br>~~—_~~||= 10V, Note 1                         30               50<br>~~—_~~|S|
|**Cies**<br>13.3<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>757<br>**Cres**<br>246<br>~~—_~~||13.3<br>757<br>246<br>~~—_~~|nF<br>pF<br>pF|
|||||
|**Qg**<br>**Qge**I<br>**Qgc**|460<br>IC= 300A, VGE= 15V, VCE= 0.5 • VCES<br>137<br>196|460<br>137<br>196|nC<br>nC<br>nC|
|**td(on)**<br>50<br>**tri**<br>87<br>**Eon**<br>3.45<br>**td(off)**<br>190<br>**tfi**<br>95<br>**Eoff**<br>2.86          4.40  mJ<br>**Inductive load, TJ = 25°C**<br>IC= 100A, VGE= 15V<br>VCE= 400V, RG= 1Ω<br>Note 2||50<br>87<br>3.45<br>190<br>95<br>2.86          4.40  mJ|ns<br>ns<br>mJ<br>ns<br>ns<br>2.86          4.40  mJ|
|**t**<br>50||50||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**|50<br>87<br>4.47<br>230<br>200<br>3.70<br>**Inductive load, TJ = 150°C**<br>IC= 100A, VGE= 15V<br>VCE= 400V, RG= 1Ω<br>Note 2|50<br>87<br>4.47<br>230<br>200<br>3.70|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.15||0.065 °C/W<br>0.15|0.065 °C/W<br>°C/W|



**TO-264 Outline** 

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**----- Start of picture text -----**<br>
Terminals:   1  = Gate<br>                   2,4  = Collector<br>                      3  =  Emitter<br>**----- End of picture text -----**<br>


**PLUS247[TM] Outline** 

Notes: 

1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

Terminals: 1 - Gate 2 - Collector 3 - Emitter 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

|Dim.<br>Millimeter<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81<br>Q<br>5.59|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32<br>5.59<br>6.20|.215 BSC<br>.780<br>.800<br>.150<br>.170<br>.220 0.244|
|R<br>4.32|4.32<br>4.83|.170<br>.190|



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXXK300N60B3 IXXX300N60B3** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>300 350<br>VGE = 15V 12V V GE = 15V<br>250           13V 300           13V<br>          12V<br>11V 250 11V<br>200<br>200<br>10V<br>150<br>10V<br>150<br>100 9V<br>9V<br>100<br>50 8V<br>8V<br>50<br>0 7V<br>0 7V<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8<br>0 1 2 3 4 5 6 7 8 9 10<br>VCE - Volts VCE - Volts<br> - Amperes Amperes<br>IC  -<br>IC<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 150ºC** 

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**----- Start of picture text -----**<br>
300<br>V GE = 15V<br>          13V<br>250           12V  11V<br>200<br>10V<br>150<br>100 9V<br>50 8V<br>7V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VCE - Volts<br>Fig. 5. Collector-to-Emitter Voltage vs.<br> Gate-to-Emitter Voltage<br>5.0<br>4.5 T J  = 25ºC<br>4.0<br>3.5<br>I C = 300A<br>3.0<br>2.5<br>200A<br>2.0<br>1.5<br>100A<br>1.0<br>9 10 11 12 13 14 15<br>VGE - Volts<br> - Amperes<br>IC<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


**Fig. 4. Dependence of VCE(sat) on Junction Temperature** 

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**----- Start of picture text -----**<br>
1.6<br>VGE = 15V<br>1.4<br>I C = 300A<br>1.2<br>I  C = 200A<br>1.0<br>I C = 100A<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Input Admittance<br>200<br>180<br>160<br>140<br>T J   = 150ºC<br>120           25ºC<br>- 40ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>4 5 6 7 8 9 10 11<br>VGE - Volts<br> - Normalized<br>CE(sat)<br>V<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


© 2012 IXYS CORPORATION, All Rights Reserved 

**IXXK300N60B3 IXXX300N60B3** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>120 16<br>TJ = - 40ºC, 25ºC, 150ºC  14  V CE = 300V<br>100  I  C = 300A<br>12  I G  = 10mA<br>80<br>10<br>60 8<br>6<br>40<br>4<br>20<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450 500<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>100,000 700<br>f = 1 MHz<br>600<br>500<br>10,000<br>Cies<br>400<br>300<br>Coes<br>1,000<br>200<br>TJ = 150ºC<br>100 R G  = 1 Ω<br>dv / dt < 10V / ns<br>Cres<br>100 0<br>eel deca<br>0 5 10 15 20 25 30 35 40 100 200 300 400 500 600<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance Fig. 12. Forward-Bias Safe Operating Area<br>0.1 10,000<br>VCE(sat) Limit<br>1,000100 ES 25µs<br>0.01 External Lead Current Limit 100µs<br>10<br>1ms<br>1  T J  = 175ºC 10ms<br>a  TC = 25ºC    DC 100m s<br> Single Pulse<br>0.001 0 .SS<br>0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 100 1000<br>Pulse Width - Seconds VCE - Volts<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - ºC / W<br> - Amperes<br>Z(th)JC IC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXXK300N60B3 IXXX300N60B3** 

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**----- Start of picture text -----**<br>
Fig. 13. Inductive Switching Energy Loss vs.<br> Gate Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 14. Inductive Switching Energy Loss vs.<br> Collector Current<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
5.0 8 4.5 7<br>4.5  E off       E on  - - - - 4.0  Eoff        Eon - - - - 6<br> T J  = 150ºC ,  V GE  = 15V  RG = 1Ω ,   VGE = 15V<br>4.0  VCE = 400V         I C = 100A 6  VCE = 400V<br>3.5 5<br>[J<br>3.5 3.0 TJ = 150ºC 4<br>3.0 4<br>2.5 3<br>2.5<br>2.0 TJ = 25ºC 2<br>2.0 2<br>I C = 50A<br>1.5 1<br>1.5<br>1.0 0 1.0 0<br>1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95 100<br>RG - Ohms IC - Amperes<br>Fig. 15. Inductive Switching Energy Loss vs. Fig. 16. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>4.5 7 380 800<br>4.0  Eoff                    Eon - - - -  6 340  t f i td(off) - - - -  700<br> RG = 1Ω ,  VGE = 15V  TJ = 150ºC,  VGE = 15V<br> VCE = 400V        VCE = 400V<br>3.5 I  C  = 100A 5 300 600<br>I  C  = 50A<br>3.0 4 260 500<br>as<br>2.5 3 220 400<br>2.0 2 180 I  C  = 100A 300<br>1.5 I  C = 50A 1 140 200<br>1.0 0 100 100<br>25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 17. Inductive Turn-off Switching Times vs. Fig. 18. Inductive Turn-off Switching Times vs.<br> Collector Current  Junction Temperature<br>350 400 300 360<br> t f i td(off) - - - -  t f i td(on) - - - -<br>300  R G  = 1Ω ,  V GE  = 15V 350 250  RG = 1Ω ,  VGE = 15V 320<br> VCE = 400V             VCE = 400V<br>250 T J = 150ºC 300<br>200 280<br>I C = 50A<br>200 250<br>150 240<br>150 200<br>TJ = 25ºC<br>100 200<br>100 150<br>I C = 100A<br>50 100 50 160<br>50 55 60 65 70 75 80 85 90 95 100 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>t<br>E<br>on  d(off)<br> - MilliJoules<br>off  - Nanoseconds<br>E  - MilliJoules t f i<br> - Nanoseconds<br>t<br> - Nanoseconds d(off)  - Nanoseconds  d(off)t<br>t f i tf i<br> - Nanoseconds<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2012 IXYS CORPORATION, All Rights Reserved 

## **IXXK300N60B3 IXXX300N60B3** 

**==> picture [255 x 414] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Inductive Turn-on Switching Times vs.<br> Gate Resistance<br>160 120<br>140  t r i t d(on) - - - - 110<br>120  T VJCE = 150 = 400V   º C,  VGE = 15V . . . ° . - 100<br>1008060 rf . I  . C - = o  100A ° - ° . ° -* . - ° -- - - -° o Pad° -.-. ° Pad 7 -* 908070<br>: - I  C  = 50A<br>40 60<br>20 50<br>0 40<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 21. Inductive Turn-on Switching Times vs.<br> Junction Temperature<br>160 53<br>140  t r i td(on) - - - - 52<br> RG = 1Ω ,  VGE = 15V<br>120  V CE = 400V       51<br>I C = 100A<br>100 50<br>80 49<br>60 48<br>40 47<br>20 I C = 50A 46<br>0 45<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Nanoseconds  d(on)t<br>t r i<br> - Nanoseconds<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


## **Fig. 20. Inductive Turn-on Switching Times vs. Collector Current** 

**==> picture [256 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 56<br> t r i td(on) - - - -<br>100  R G  = 1Ω ,  V GE  = 15V 54<br> VCE = 400V<br>80 52<br>6040 TJ = 25ºC = -?° -7 = er - eeING eo?oc” -- -- -7eect ie reeerieerrrt- - 5048<br>— -o77 ee? -77 TJ = 150ºC<br>- eer”<br>20 46<br>0 44<br>50 55 60 65 70 75 80 85 90 95 100<br>IC - Amperes<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXX_300N60B3(9D)10-10-12 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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