# TRANSISTOR, IGBT, 650V, 160A, TO-247AD

![Product image](https://novapart.co/image/farnell:3953534/)

**URL**: https://novapart.co/products/IXXH80N65B4/transistor-igbt-650v-160a-to-247ad
**SKU**: IXXH80N65B4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.8100
**Stock**: 10+
**Lead Time**: 298 days (indicative)

## Description

Continuous Collector Current:160A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:625W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Op 03AH1972

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | XPT GenX4 Series |
| Power Dissipation | 625W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 160A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3953534/)

## **XPT[TM ] 650V IGBT GenX4[TM]** 

Extreme Light Punch Through IGBT for 5-30 kHz Switching 

## **IXXH80N65B4** 

**V =   650V CES I =   80A C110 V  2.1V CE(sat) t =   53ns fi(typ)** 

## **TO-247 AD** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**VCES**|TJ = 25°C to 175°C<br>650|650|V|
|**VCGR**|TJ = 25°C to 175°C, RGE= 1M<br>650|650|V|
|**VGES**|Continuous<br>±20|±20|V|
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**|TC = 25°C (Chip Capability)                                             160|= 25°C (Chip Capability)                                             160|A|
|**IC110**|TC = 110°C<br>80|80|A|
|**ICM**|TC = 25°C, 1ms<br>430|430|A|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 3|ICM= 160|A|
|**(RBSOA)**Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @VCE  VCES||
|**tsc**|VGE= 15V, VCE= 360V, TJ= 150°C                          10             μs|= 150°C                          10             μs|= 150°C                          10             μs|
|**(SCSOA)**|RG= 82, Non Repetitive|||
|**PC**|TC = 25°C|625|W|
|**TJ**||-55 ... +175|°C|
|**TJM**||175|°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s|260|°C|
|**Md**|Mounting Torque|1.13/10|Nm/lb.in.|
|**Weight**||6|g|



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**----- Start of picture text -----**<br>
G<br>C   Tab<br>E<br>G  =  Gate   C      =   Collector<br>E  =  Emitter   Tab  =   Collector<br>**----- End of picture text -----**<br>


## **Features** 

- Optimized for 5-30kHz Switching 

- Square RBSOA 

- Short Circuit Capability 

- International Standard Package 

## **Advantages** 

- High Power Density 

- Extremely Rugged 

- Low Gate Drive Requirement 

## **Applications** 

- Power Inverters 

- UPS 

- Motor Drives 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**<br>~~||~~|**Min.        Typ.        Max.**<br>~~||~~|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>650                                      V<br>~~||~~|650                                      V<br>~~||~~|650                                      V|
|**VGE(th)**<br>IC<br>= 250A, VCE= VGE<br>4.0<br>~~||~~|6.5<br>~~||~~|6.5<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C<br>~~||~~<br>~~|~~|10<br>500<br>~~||_~~<br>~~|~~|10<br>A<br>500A|
|**IGES**<br>VCE = 0V, VGE=20V<br>~~|~~|<br>~~|~~|100    nA|
|**VCE(sat)**<br>IC<br>= 80A, VGE= 15V, Note 1<br>1.65           2.10       V<br>TJ= 150C<br>2.00                     V<br>~~|~~|1.65           2.10       V<br>2.00                     V<br>~~|=~~|1.65           2.10       V<br>2.00                     V|



- SMPS 

- PFC Circuits 

- Battery Chargers  Welding Machines  Lamp Ballasts 

© 2016 IXYS CORPORATION, All Rights Reserved 

DS100527B(9/16) 

## **IXXH80N65B4** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**||**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                        25                42||= 10V, Note 1                        25                42|S|
|**Cies**<br>3860<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>196<br>**Cres**<br>58||3860<br>196<br>58|pF<br>pF<br>pF|
|**Qg(on)**<br>120<br>**Qge**IC= 80A, VGE= 15V, VCE= 0.5 • VCES<br>32<br>**Qgc**<br>46||120<br>32<br>46|nC<br>nC<br>nC|
|**td(on)**<br>26<br>**tri**<br>100<br>**Eon**<br>3.36<br>**td(off)**<br>112<br>**tfi**<br>53<br>**Eoff**<br>1.83            mJ<br>**Inductive load, TJ = 25°C**<br>IC= 80A, VGE= 15V<br>VCE= 400V, RG= 3<br>Note 2||26<br>100<br>3.36<br>112<br>53<br>1.83            mJ|ns<br>ns<br>mJ<br>ns<br>ns<br>1.83            mJ|
|**t**<br>23||23||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**|23<br>102<br>5.50<br>128<br>94<br>2.70<br>**Inductive load, TJ = 150°C**<br>IC= 80A, VGE= 15V<br>VCE= 400V, RG= 3<br>Note 2|23<br>102<br>5.50<br>128<br>94<br>2.70|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.21||0.24 °C/W<br>0.21|0.24 °C/W<br>°C/W|



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 TO-247 (IXXH) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 - Gate<br>2,4 - Collector<br>3 - Emitter<br>**----- End of picture text -----**<br>


Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXXH80N65B4** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>160<br>V GE = 15V 350<br>140 Pf ft            13V  Il a VGE = 15V<br>           12V 11V<br>300<br>120<br>14V<br>250<br>100 10V 13V<br>TTT eye -_-_<br>80 ToT fet to 200 (ESE SFe 12V<br>60 9V 150 11V<br>“LLP yYee « 6Lp<br>10V<br>40 100<br>(TTA rT) GEE<br>9V<br>8V<br>20 50<br>8V<br>eS<br>0 i Ane) 7V 0 7V<br>0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150ºC<br>Junction Temperature<br>160 2.0<br>140 TT V          14V GE = 15V  7 12V 1.8 VGE = 15V  eZ<br>          13V<br>120 I  C  = 160A<br>11V 1.6<br>100<br>ne, 77 1.4<br>10V<br>80<br>1.2 I  C  = 80A<br>60 V4 _| ——_——on<br>9V<br>CoS Gee<br>1.0<br>40 ge ft | pe<br>8V<br>20 0.8<br>TA eer 7V Et I C = 40A<br>6V<br>0 ae 0.6 TT {tit, fl<br>0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br> Gate-to-Emitter Voltage<br>4.5 200<br>TJ  = 25ºC  180<br>4.0<br>160<br>3.5 BS) 140 | | [| [| | T           25J  = - 40ºC  | ºC [ VY<br>120 Ee TJ = 150ºC<br>3.0<br>I C = 160A  100<br>2.5 PREC | | | || Hf<br>2.0 VX ft 8060 EREV<br>80A<br>40<br>1.5<br>RREEEES 20 BoCoAcHE<br>40A<br>1.0 OSSS 0 ee<br>8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11 12 13 14<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC  -<br>IC<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - VoltsCE Amperes<br>V  -<br>IC<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXXH80N65B4** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance<br>Fig. 8. Gate Charge<br>60 16<br>TJ = - 40ºC<br>VCE = 10V  VCE = 325V<br>14<br>50 NN eee  I C = 80A<br>12  I G = 10mA<br>25ºC<br>40<br>esa 10 ee eee<br>150ºC<br>30 Veer?) 8 Le<br>6<br>20 eo Ppeee TT<br>4<br>10<br>Pep 2 Ape eee<br>0 PoE 0 Ze<br>0 50 100 150 200 250 300 350 0 20 40 60 80 100 120<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 180<br>ee 160<br>C ies 140<br>1,000 PEE) 120 Eeee<br>100<br>C oes<br>80<br>NeeEP) Gee<br>100 60<br>NEES<br>40 TJ = 150ºC<br>C res RG = 3Ω<br>f = 1 MHz  20 dv / dt < 10V / ns<br>10 Molter) 0 CHEESE<br>0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXXH80N65B4** 

**==> picture [527 x 635] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>4.0 12 3.5 7<br> Eoff       Eon  3.0  Eoff       Eon  6<br>3.5  TJ = 150ºC ,  VGE = 15V 10  RG = 3Ω , VGE = 15V T J  = 150ºC<br>=n  V CE  = 400V         2.5 fee  VCE = 400V        5<br>3.0 8<br>—— I C = 80A 2.0 | |feteree 4<br>2.5 Seer 6 |<br>dp] 1.5 See 3<br>2.0 4 T J  = 25ºC<br>I C = 40A 1.0 2<br>PP te<br>1.5 eee 2 0.5 Eeeee 1<br>1.0 0 0.0 0<br>FTE TTT ETT)a ee©~ 6EEade [EET]<br>3 6 9 12 15 18 21 24 27 30 33 40 45 50 55 60 65 70 75 80<br>RG - Ohms IC - Amperes<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>3.6 8 180 600<br>3.2  E off      E on  7  t f i td(off)<br>150 500<br> RG = 3Ω ,  VGE = 15V  TJ = 150ºC,  VGE = 15V<br>2.8 =]  VCE = 400V       6 CGE  V CE  = 400V<br>120 400<br>2.4 5<br>ee eee ne<br>2.0 4 90 300<br>I C = 80A<br>—= I C = 80A =<br>1.6 eee 3 fi | epee<br>60 I C = 40A 200<br>1.2 2<br>ial en noe ee<br>30 100<br>0.8 ee I C = 40A 1 Teer<br>0.4 0 0 EEE 0<br>fF [fee] | |<br>25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 30 33<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br> Collector Current  Junction Temperature<br>140 200 140 210<br> t f i td(off)  120  t f i t d(off) 190<br>120  RG = 3Ω ,  VGE = 15V 180  RG = 3Ω ,  VGE = 15V<br>THES]  V CE  = 400V            100 Ee  VCE = 400V       170<br>100 160<br>oo T J  = 150ºC 80 (Ge 150<br>80 140<br>Chee 60 ae I C = 40A, 80A 130<br>60 120<br>40 110<br>PP Tp] pref ceetem<br>40 TJ = 25ºC 100<br>20 90<br>20 aert tt | 80 0 sanaEEEEEEaneuveneaEEE E onanEEEEEIEEE 70<br>40 45 50 55 60 65 70 75 80 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>t<br>E  d(off)<br>on<br> - MilliJoules<br>off  - Nanoseconds<br>E  - MilliJoules t f i  - Nanoseconds<br> - Nanoseconds  d(off)t  - Nanoseconds  d(off)t<br>t f i tf i<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXXH80N65B4** 

## **Fig. 19. Inductive Turn-on Switching Times vs. Collector Current** 

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**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br> Gate Resistance  Collector Current<br>180 120 120 30<br> t r i td(on)   t r i t d(on)<br>150  T J  = 150ºC,  V GE  = 15V 100 100  R G  = 3 Ω ,  V GE  = 15V 28<br>ft  VCE = 400V   fT iii  VCE = 400V  nsaeenee<br>120 80<br>Pepe 80 Pe 26<br>|_| I C = 80A -<br>90 eTERE C Eee ead 60 TJ = 25ºC<br>60 24<br>60 a ee epee= I C = 40A =-7 ea nae 40 Z TJ = 150ºC<br>40 22<br>30 po esl 20 aaa<br>0 Pe 0 20 PEER AEAEEER EEE 20<br>3 6 9 12 15 18 21 24 27 30 33 40 45 50 55 60 65 70 75 80<br>RG - Ohms IC - Amperes<br>Fig. 20. Inductive Turn-on Switching Times vs.<br> Junction Temperature<br>160 32<br>140  t r i t d(on)  30<br> RG = 3Ω ,  VGE = 15V<br>120 Pr  VCE = 400V       28<br>I C = 80A<br>10080 SSSTOLU Le 2624<br>60 PPLE EEE Ll 22<br>I C = 40A<br>40 ie eeee 20<br>20 PPP 18<br>0 16<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> d(on)t  d(on)t<br> - Nanoseconds  - Nanoseconds<br>t r i tr i<br> - Nanoseconds  - Nanoseconds<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXX_80N65B4D1(E7-RZ43) 9-21-16 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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