# IGBT, 145 A, 1.8 V, 536 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:4785257/)

**URL**: https://novapart.co/products/IXXH60N65B4/igbt-145-a-18-v-536-w-650-to-247-3-pins
**SKU**: IXXH60N65B4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.7300
**Stock**: 200+
**Lead Time**: 204 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | XPT GenX4 Series |
| Power Dissipation | 536W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 145A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4785257/)

## **XPT[TM ] 650V IGBT GenX4[TM]** 

Extreme Light Punch Through IGBT for 5-30 kHz Switching 

## **IXXH60N65B4** 

**V =   650V CES I =   60A C110 V  2.2V CE(sat) t =   43ns fi(typ)** 

## **TO-247** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**VCES**<br>TJ = 25°C to 175°C<br>650<br>V<br>**VCGR**<br>TJ = 25°C to 175°C, RGE= 1M<br>650<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>~~——~~||||
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**<br>**IC110**|TC = 25°C (Chip Capability)                                             145<br>TC = 110°C<br>60|= 25°C (Chip Capability)                                             145<br>60|A<br>A|
|**ICM**|TC = 25°C, 1ms<br>265|265|A|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 5|ICM= 120|A|
|**(RBSOA)**Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @VCE  VCES||
|**tsc**|VGE= 15V, VCE= 360V, TJ= 150°C                          10             μs|= 150°C                          10             μs|= 150°C                          10             μs|
|**(SCSOA)**|RG= 82, Non Repetitive|||
|**PC**|TC = 25°C|536|W|
|**TJ**||-55 ... +175|°C|
|**TJM**||175|°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**<br>**Md**|1.6 mm (0.062in.) from Case for 10s<br>Mounting Torque|260<br>1.13/10|°C<br>Nm/lb.in|
|**Weight**||6|g|



**==> picture [132 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>C   Tab<br>E<br>G  =  Gate   C      =   Collector<br>E  =  Emitter   Tab  =   Collector<br>**----- End of picture text -----**<br>


## **Features** 

- Optimized for 5-30kHz Switching 

- Square RBSOA 

- Short Circuit Capability 

- International Standard Package 

## **Advantages** 

- High Power Density 

- Extremely Rugged 

- Low Gate Drive Requirement 

## **Applications** 

- Power Inverters 

- UPS 

- Motor Drives 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>650                                      V|650                                      V<br>~~a~~|650                                      V|
|**VGE(th)**<br>IC<br>= 250A, VCE= VGE<br>4.0|6.5<br>~~a~~<br>~~a~~|6.5<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C|5<br>250<br>~~_~~|5<br>A<br>250A|
|**IGES**<br>VCE = 0V, VGE=20V|<br>~~a~~|100    nA|
|**VCE(sat)**<br>IC<br>= 60A, VGE= 15V, Note 1<br>1.8          2.2       V<br>TJ= 150C<br>2.1                     V|1.8          2.2       V<br>2.1                     V<br>~~a~~<br>~~_~~|1.8          2.2       V<br>2.1                     V|



- SMPS 

- PFC Circuits 

- Battery Chargers 

- Welding Machines 

- Lamp Ballasts 

© 2016 IXYS CORPORATION, All Rights Reserved 

DS100495C(9/16) 

## **IXXH60N65B4** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**<br>~~——~~||**Typ.        Max.**<br>~~——~~|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                        17                28<br>**C**<br>~~——~~||= 10V, Note 1                        17                28<br>~~——~~<br>~~_~~|S|
|**Cies**<br>**Coes**V<br>**Cres**|2590<br>VCE= 25V, VGE= 0V, f = 1MHz<br>133<br>40<br>~~——~~|2590<br>133<br>40<br>~~——~~<br>~~_~~|pF<br>pF<br>pF|
|**res**<br>**Qg(on)**<br>86<br>**Qge**IC= 60A, VGE= 15V, VCE= 0.5 • VCES<br>22<br>**Qgc**<br>35||86<br>22<br>35<br>~~_~~|nC<br>nC<br>nC|
|**td(on)**<br>19<br>**tri**<br>80<br>**Eon**<br>3.2<br>**td(off)**<br>107<br>**tfi**<br>43<br>**Eoff**<br>1.1              mJ<br>**Inductive load, TJ = 25°C**<br>IC= 60A, VGE= 15V<br>VCE= 400V, RG= 5<br>Note 2||19<br>80<br>3.2<br>107<br>43<br>1.1              mJ|ns<br>ns<br>mJ<br>ns<br>ns<br>1.1              mJ|
|**t**<br>20||20||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**|20<br>74<br>4.2<br>120<br>88<br>1.8<br>**Inductive load, TJ = 150°C**<br>IC= 60A, VGE= 15V<br>VCE= 400V, RG= 5<br>Note 2|20<br>74<br>4.2<br>120<br>88<br>1.8|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.21||0.28 °C/W<br>0.21|0.28 °C/W<br>°C/W|



Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXXH60N65B4** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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**----- Start of picture text -----**<br>
120 240<br>V          14V  GE = 15V 12V VGE = 15V<br>100           13V  200<br>11V<br>14V<br>80 160<br>13V<br>TTT fet] fe =r=<br>10V<br>12V<br>60 120<br>11V<br>PT fe |<br>40 9V 80<br>10V<br>TTA PAF<br>8V 9V<br>20 40<br>nD AG e sae<br>7V 8V<br>0 |Art 0 7V<br>tT tT | [be }———,<br>0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150ºC<br>Junction Temperature<br>120 2.0<br>13V<br>VGE = 15V<br>          14V 1.8 VGE = 15V<br>100 SR4 12V ee ee<br>1.6 I C = 120A<br>80<br>11V<br>Her a<br>1.4<br>60<br>10V<br>EY 1.2 eae<br>I C = 60A<br>40 BGG? eee<br>9V 1.0<br>20<br>BED Zan00 8V 0.8 e ee<br>248002 L I C = 30A<br>0 Dee 7V 0.6<br>ee eee eeee<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br> Gate-to-Emitter Voltage<br>7 100<br>TJ  = 25ºC  90<br>6 Tieae pce; 80 AY T           25J  = - 40ºC ºC<br>5 Te) 70 YS SS ie T J = 150ºC<br>60<br>4 50<br>I C = 120A  40 GREE AEE<br>3 HHA Eee<br>30<br> 60A<br>20<br>2  30A<br>CCS 10 EEE<br>1 0<br>EEE SSS ee<br>8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11 12<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC  -<br>IC<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - VoltsCE Amperes<br>V  -<br>IC<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXXH60N65B4** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>40 16<br>TJ = - 40ºC<br>35 14  VCE = 325V<br>Ne ee e e  ee  I C = 60A eeeee<br>30 12  I G = 10mA<br>aee 25ºC<br>25 fa [|[ftft | 10 TT<br>150ºC<br>20 foaT 8 | | Ta<br>| | | | | [dT]<br>15 ye | | A 6<br>10 4<br>yoy | | | ft] ml d A<br>5 2<br>po;<br>0 0<br>poof |EC<br>0 50 100 150 200 250 300 0 10 20 30 40 50 60 70 80 90<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 140<br>f = 1 MHz<br>120<br>ETTIIh) Geese<br>Cies 100<br>1,000<br>PEC 80 EEE<br>C oes 60<br>100 NSE ee<br>40<br>PEERS ee TJ = 150ºC<br>Cres 20 dv / dt < 10V / ns RG = 5Ω<br>10 RaFPP 0 eee<br>0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700<br>VCE - Volts VCE - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>0.11 EESai ee=riienenil<br>0.01<br>Pah hen<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXXH60N65B4** 

**==> picture [170 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs.<br> Gate Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>4.0 8 4.5 9<br>3.5 SS  Eoff      Eon  4 7 4.0 FSET  Eoff                    Eon  8<br> T J  = 150ºC ,  V GE  = 15V 3.5  RG = 5Ω ,   VGE = 15V 7<br>3.0  VCE = 400V         6  VCE = 400V<br>ee I C = 60A e e 3.0 ee 6<br>2.5 5<br>2.5 5<br>[ae eaee= ne et 2a<br>2.0 4<br>ee eee 2.0 ee 4<br>1.5 ee 3 1.5 T J  = 150ºC aa 3<br>1.0 ee I C = 30A 2 1.0 ee 2<br>0.5 SSS 1 0.5 TJ = 25ºC cae aa 1<br>0.0 P| | tt | te et dl 0 0.0 see of| 0<br>5 10 15 20 25 30 35 40 45 50 55 30 40 50 60 70 80 90<br>RG - Ohms IC - Amperes<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>2.4 5.0 140 700<br>2.2  Eoff                    Eon  4.5 120  t f i td(off)  600<br>2.0 fo  RG = 5Ω , VGE = 15V RS 4.0 pat  TJ = 150ºC,  VGE = 15V tt<br>1.8  VCE = 400V       I  C  = 60A 3.5 100  VCE = 400V        500<br>1.6 tS 3.0<br>80 400<br>1.4 pepe eete 2.5 e EETeee eee<br>I C = 60A<br>60 300<br>1.2 2.0 I C = 30A<br>set I C = 30A O L Ieee<br>1.0 1.5 40 200<br>pe ae<br>0.8 1.0<br>20 100<br>0.6 seaceveeansuse=ececd seca 0.5 eT TTTeeTt [td]<br>0.4 EEREEEE EEEEEEHEEEEEEEEH 0.0 0 Pt Tet; [Tey]] yy 0<br>25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br> Collector Current  Junction Temperature<br>140 200 140 200<br>120 eee  t f i t d(off)  ee ee 180 120 genes  t f i td(off)  180<br> RG = 5Ω ,  VGE = 15V  RG = 5Ω ,  VGE = 15V<br>100 1Pee  VCE = 400V            160 100  VCE = 400V       ee 160<br>I C = 30A<br>80 140 80 140<br>TJ = 150ºC<br>60 120 60 I  C  = 60A 120<br>40 pq TJ = 25ºC | 100 40 beet et 100<br>4. capo I C = 30A Pt<br>20 Tf ft ff 80 20 PEELE EEE 80<br>0 | ft ft ft 60 0 BECEEECEEEEEE EEE 60<br>30 40 50 60 70 80 90 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>t<br>E<br>on  d(off)<br> - MilliJoules<br>off  - Nanoseconds<br>E  - MilliJoules t f i<br> - Nanoseconds<br>t<br>t<br> d(off)<br> d(off)<br> - Nanoseconds<br>t f i  - Nanosecondsf i<br>t<br> - Nanoseconds<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXXH60N65B4** 

**==> picture [179 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Inductive Turn-on Switching Times vs.<br> Collector Current<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on Switching Times vs.<br> Gate Resistance  Collector Current<br>200 100 160 30<br> t r i t d(on)  140  t r i td(on)   28<br>160  T J = 150ºC,  V GE = 15V 80  R G  = 5Ω ,  V GE  = 15V<br>p=  VCE = 400V   att o 120 fSa“IPP  VCE = 400V  ee 26<br>100 24<br>120 epee 60 Fee<br>I C = 60A 80 22<br>80 eseLest 40 60 S TJ = 150ºC eanD TJ = 25ºC aoe 20<br>I C = 30A<br>40 18<br>40 reaps.eo TE | 20 Ceeeee= a5rann<br>20 16<br>0 PELE 0 0 rey tT TT 14<br> ETE EE , Ee<br>5 10 15 20 25 30 35 40 45 50 55 30 40 50 60 70 80 90<br>RG - Ohms IC - Amperes<br>Fig. 20. Inductive Turn-on Switching Times vs.<br> Junction Temperature<br>120105 TO  t r i t d(on)  2423<br> RG = 5Ω ,  VGE = 15V<br>90 TE  VCE = 400V       22<br>75 ee 21<br>60 I C = 60A 20<br>45 TINTFMIBEE 19<br>[peaeect SPMCGoCz--<br>30 18<br>SREB IRENA EARULAEEEAEEEE=<br>I C = 30A<br>15 r=-f-- 17<br>7 |<br>0 CCE 16<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Nanoseconds  d(on)t  - Nanoseconds  d(on)t<br>t r i tr i<br> - Nanoseconds  - Nanoseconds<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXX_60N65B4(E6-RZ43) 9-23-16 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXXH60N65B4/igbt-145-a-18-v-536-w-650-to-247-3-pins)
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- [Supplier page](https://es.farnell.com/littelfuse/ixxh60n65b4/igbt-single-650v-145a-to-247/dp/4785257)
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