# IGBT, 235 A, 2.06 V, 880 W, 650 V, TO-247AD, 3 Pins

![Product image](https://novapart.co/image/farnell:3438441/)

**URL**: https://novapart.co/products/IXXH110N65C4/igbt-235-a-206-v-880-w-650-to-247ad-3-pins
**SKU**: IXXH110N65C4
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €6.1000
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (12-Jan-2017) |
| No. Of Pins | 3Pins |
| Product Range | XPT GenX4 |
| Power Dissipation | 880W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 235A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 2.06V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3438441/)

## **XPT[TM ] 650V IGBT** 

## **IXXH110N65C4** 

## **GenX4[TM]** 

Extreme Light Punch Through IGBT for 20-60 kHz Switching 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**|TJ = 25°C to 175°C<br>650|650|V|
|**VCGR**|TJ = 25°C to 175°C, RGE= 1M<br>650|650|V|
|**VGES**|Continuous<br>±20|±20|V|
|**VGEM**|Transient<br>±30|±30|V|
|**IC25**|TC = 25°C (Chip Capability)                                             235|= 25°C (Chip Capability)                                             235|A|
|**ILRMS**|Terminal Current Limit                                                       160|Terminal Current Limit                                                       160<br>A|A|
|**IC110**|TC = 110°C<br>110                   A|110                   A|110                   A|
|**ICM**|TC = 25°C, 1ms<br>600|600|A|
|**SSOA**|VGE= 15V, TVJ= 150°C, RG= 2|ICM= 220|A|
|**(RBSOA)**Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @VCE  VCES||
|**tsc**|VGE= 15V, VCE= 360V, TJ= 150°C                              10              μs|= 150°C                              10              μs|= 150°C                              10              μs|
|**(SCSOA)**|RG= 10, Non Repetitive|||
|**PC**|TC = 25°C|880|W|
|**TJ**||-55 ... +175|°C|
|**TJM**||175|°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s|260<br>°C|°C|
|**Md**|Mounting Torque|1.13/10<br>Nm/lb.in.||
|**Weight**||6|g|



|**VCES**|**=   650V**|**=   650V**|
|---|---|---|
|**IC110**|**=   110A**|**=   110A**|
|**VCE(sat)**|**CE(sat)  **|**2.35V**|
|**tfi(typ)**|**=   35ns**|**=   35ns**|



## **TO-247 AD** 

**==> picture [132 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>C   Tab<br>E<br>G  =  Gate   C      =   Collector<br>E  =  Emitter   Tab  =   Collector<br>**----- End of picture text -----**<br>


## **Features** 

- Optimized for 20-60kHz Switching 

- Square RBSOA 

- Avalanche Capability 

- Short Circuit Capability 

- International Standard Package 

## **Advantages** 

- High Power Density 

- 175°C Rated 

- Extremely Rugged 

- Low Gate Drive Requirement 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**<br>~~|~~|**Min.        Typ.        Max.**<br>~~|~~|**Min.        Typ.        Max.**|
|**BVCES**<br>IC= 250A, VGE= 0V<br>650                                      V<br>~~|~~<br>~~|~~|650                                      V<br>~~|~~<br>~~|~~|650                                      V|
|**VGE(th)**<br>IC<br>= 4mA, VCE= VGE<br>4.0<br>~~|~~<br>~~|~~|6.5<br>~~|~~<br>~~|~~|6.5<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>TJ= 150C<br>~~|~~<br>~~|~~|10<br>500<br>~~|_~~<br>~~|~~|10<br>A<br>500A|
|**IGES**<br>VCE = 0V, VGE=20V<br>~~|~~|<br>~~|~~|100    nA|
|**VCE(sat)**<br>IC<br>= 110A, VGE= 15V, Note 1<br>2.06      2.35     V<br>TJ= 150C<br>2.50                     V<br>~~|~~|2.06      2.35     V<br>2.50                     V<br>~~|=~~|2.06      2.35     V<br>2.50                     V|



## **Applications** 

- UPS 

- Motor Drives 

- SMPS 

- PFC Circuits 

- Battery Chargers  Welding Machines 

- Lamp Ballasts 

- High Frequency Power Inverters 

© 2016 IXYS CORPORATION, All Rights Reserved 

DS100497C(9/16) 

**IXXH110N65C4** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**||**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 60A, VCE= 10V, Note 1                        30                52<br>**C**||= 10V, Note 1                        30                52|S<br>pF|
|**Cies**<br>**Coes**V<br>**Cres**|5500<br>VCE= 25V, VGE= 0V, f = 1MHz<br>267<br>80|5500<br>267<br>80|pF<br>pF<br>pF|
|**Qg(on)**<br>167<br>**Qge**IC= 110A, VGE= 15V, VCE= 0.5 • VCES<br>44<br>**Qgc**<br>63<br>~~!~~||167<br>44<br>63<br>~~!;~~|nC<br>nC<br>nC<br>~~!;~~|
|**gc**<br>**td(on)**<br>30<br>**tri**<br>45<br>**Eon**<br>2.50<br>**td(off)**<br>110          ns<br>**tfi**<br>35<br>**Eoff**<br>0.63          1.05  mJ<br>**Inductive load, TJ = 25°C**<br>IC= 55A, VGE= 15V<br>VCE= 400V, RG= 2<br>Note 2<br>~~!~~||30<br>45<br>2.50<br>110          ns<br>35<br>0.63          1.05  mJ<br>~~!;~~|ns<br>ns<br>mJ<br>110          ns<br>ns<br>0.63          1.05  mJ<br>~~!;~~|
|**t**<br>26||26||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**|26<br>45<br>3.55<br>120<br>40<br>0.90<br>**Inductive load, TJ = 150°C**<br>IC= 55A, VGE= 15V<br>VCE= 400V, RG= 2<br>Note 2|26<br>45<br>3.55<br>120<br>40<br>0.90|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>0.21||0.17 °C/W<br>0.21<br>~~=~~|0.17 °C/W<br>°C/W<br>~~=~~|



Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXXH110N65C4** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>500<br>200 V          13V  GE = 15V 450 V GE = 15V<br>          12V 11V<br>400 14V<br>160 ST CARR<br>350<br>pil Yee] 10V Ree Ree HH 13V<br>300<br>120 Tililfer Fee err 12V<br>250<br>11V<br>80 | | | | VWY eee 9V 200 SESS2222S eee<br>150 10V<br>8V<br>40 “~~ 100 poe 9V<br>SAAR 7V 50 EEE 8V<br>0 LAT 0 RRRR 7V<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20 22 24<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 150ºC<br>Junction Temperature<br>2.0<br>VGE = 15V<br>200<br>SS)           14V 12V 1.8 FST VGE = 15V  Te<br>          13V<br>160 Too eS 11V 1.6 ee I C = 220A cee<br>120 HL Ur 10V 1.4 -<br>Ye 1.2 ee<br>80 9V I C = 110A<br>Cryer 1.0 Ferre<br>40 _ Ue 8V ee<br>0.8<br>I C = 55A<br>7V<br>0 LA f-—eee — O 0.6 fTP| | tt}EP—<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 175<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br> Gate-to-Emitter Voltage<br>5.55.0 i 2 TJ  = 25ºC  350 Tf<br>300<br>TJ  = - 40ºC<br>4.5<br>           25ºC<br>BES 250 ee<br>4.0 rit te LLL TJ  = 150ºC<br>3.5 I C = 220A 200<br>Fo RL<br>3.0 ee 150 4 FG<br>2.5<br>Se ee 110A  100 Zee<br>2.0 Aee<br>50<br>1.5 “Ss 55A ULL TA<br>1.0 Snne es 0<br>8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11 12 13 14 15<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC IC -<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - VoltsCE Amperes<br>V  -<br>IC<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXXH110N65C4** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>90 16<br>80 TJ = - 40ºC 14  VCE = 325V<br> I  C  = 110A<br>70 a Fe 12  I G = 10mA<br>60 sss 25ºC Lee<br>10<br>50<br>150 º C 8<br>40 —— a<br>6<br>30<br>fz CC A<br>20 a 4<br>10 2<br>|ee ee ee<br>0 POEEEEESEEEEEE) 0  ZEESEEEEEEPEESP<br>Ere<br>0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 240<br>ee ee C ies 200 —}—{—1__|____ |<br>1,000 160<br>Coes<br>120<br>eRe) EECECHE<br>100 80<br>Cres TJ = 150ºC<br>SSS 40 RG = 2Ω<br>f = 1 MHz<br>dv / dt < 10V / ns<br>10 0<br>0 eal 5 10 15 20 PETE) 25 30 35 40 100 (eer 200 300 400 500 600 700<br>1 V CE - Volts Fig. 11. Maximum Transient Thermal Impedance VCE - Volts<br>Fig. 11. Maximum Transient thermal Impedance<br>0.3 aaaa<br>0.1<br>SLL<br>0.01<br>SitiSeticisai<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>aif esineil atid imstiaSutat<br>Pulse Width - Seconds<br>IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


## **IXXH110N65C4** 

**==> picture [526 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>6 13 3.0 12<br> E off                      E on   Eoff        Eon<br>5  TJ = 150ºC ,  VGE = 15V 11 2.5  RG = 2Ω ,   VGE = 15V 10<br> V CE  = 400V          V CE  = 400V<br>f= Lt ff iad Baeee<br>4 9 2.0 8<br>I C = 110A<br>pee<br>3 7 1.5 TJ = 150ºC 6<br>| | LI rr<br>2 | 5 1.0 ge 4<br>I C = 55A<br>1 See,— SS ee Ci 3 0.5 BES| TJ = 25ºC 2<br>0 1 0.0 0<br>TP EEL PEE Eee<br>2 4 6 8 10 12 14 16 55 60 65 70 75 80 85 90 95 100 105 110<br>RG - Ohms IC - Amperes<br>Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>3.0 12 160 400<br> Eoff     Eon  140  t f i td(off) 350<br>2.5  R G  = 2 Ω ,   V GE  = 15V 10  TJ = 150ºC,  VGE = 15V<br>Face  VCE = 400V       120 Ea  V CE  = 400V        300<br>2.0 8<br>I C = 110A 100 250<br>1.5 6 80 I  C = 110A 200<br>60 150<br>1.0 4 I C = 55A<br>40 100<br>I C = 55A<br>0.5 2<br>Pero 20 Fs 50<br>0.0 PECHEECHEE EEE HEH 0 0 eeee 0<br>25 50 75 100 125 150 2 4 6 8 10 12 14 16<br>TJ - Degrees Centigrade RG - Ohms<br>Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.<br> Collector Current  Junction Temperature<br>120 140 140 130<br> t f i t d(off)  120  t f i t d(off)  125<br>100  RG = 2Ω ,  VGE = 15V 130  R G = 2Ω ,  V GE = 15V<br> VCE = 400V            100  VCE = 400V       120<br>80 HH 120 Ee<br>CT TJ = 150ºC | ber 80 yee 115<br>60 I C = 55A, 110A 110<br>60 110<br>arrest T J = 25ºC | 40 statuette 105<br>40 eer Try) 100 0 ESTEE<br>ae }AS PER TES<br>20 100<br>20 TEP ELLLLLE) 90 ©) 0 SanaaFetenaand reenan Ann 95<br>55 60 65 70 75 80 85 90 95 100 105 110 25 50 75 100 125 150<br>IC - Amperes TJ - Degrees Centigrade<br>E E<br>on on<br> - MilliJoules  - MilliJoules<br>off off<br>E  - MilliJoules E  - MilliJoules<br>t<br>E<br>on  d(off)<br> - MilliJoules<br>off  - Nanoseconds<br>E  - MilliJoules t f i<br> - Nanoseconds<br> - Nanoseconds  d(off)t  - Nanoseconds  d(off)t<br>t f i tf i<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXXH110N65C4** 

**==> picture [524 x 418] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br> Gate Resistance  Collector Current<br>200 100 160 44<br>180 oS  t T J r i = 150ºC,  V GE td(on)  = 15V 90 140 ==  t RGr i = 2Ω ,  VGEt = 15Vd(on)   OL$L 40<br>160 80<br> VCE = 400V    VCE = 400V<br>120 36<br>140 70<br>inaarareece fe TJ = 25ºC<br>120 CSS I  C  = 110A 60 100 Pee 32<br>100 50 80 TJ = 150ºC 28<br>80 40<br>pea 60 pepe Tee 24<br>60 30<br>popes i | I C = 55A 40 —|er 20<br>40 20<br>20 22aaNSnnRue 10 20 FCEPEEEEE 16<br>2 4 6 8 10 12 14 16 55 60 65 70 75 80 85 90 95 100 105 110<br>RG - Ohms IC - Amperes<br>Fig. 20. Inductive Turn-on Switching Times vs.<br> Junction Temperature<br>200 60<br> t r i td(on)<br>160 foot  RG = 2Ω ,  VGE = 15V 50<br> VCE = 400V<br>120 Lo 40<br>I C = 110A<br>80 ACEC EPH er GEESE 30<br>I C = 55A<br>40 PPE Sree 20<br>0 EEE SEE HEE E EE 10<br>25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> d(on)t  d(on)t<br> - Nanoseconds  - Nanoseconds<br>t r i tr i<br> - Nanoseconds  - Nanoseconds<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: IXX_110N65C4(E8-RZ43) 8-31-16 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixxh110n65c4/transistor-igbt-650v-235a-to-247ad/dp/3438441)
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