# Power MOSFET, X2-Class, N Channel, 650 V, 2 A, 2.3 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2674795/)

**URL**: https://novapart.co/products/IXTY2N65X2/power-mosfet-x2-class-n-channel-650-v-2-a-23-ohm
**SKU**: IXTY2N65X2
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9660
**Stock**: 10+
**Lead Time**: 295 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 55W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 2.3ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674795/)

## **X2-Class Power MOSFET** 

# **IXTY2N65X2 IXTP2N65X2** 

**V =   650V DSS I =   2A D25** 

> **R  2.3  DS(on)** 

N-Channel Enhancement Mode 

**TO-252 (IXTY)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||S|G<br>S|S<br>~~.~~|~~.~~|~~.~~|
|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|650|V||||D (Tab)||
|**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V|**TO-220 (IXTP)**|||||
|**VGSS**|Continuous|30|V||||||
|**VGSM**<br>~~a~~|Transient<br>~~a~~|40<br>~~a~~|V<br>~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|
|**ID25**<br>**IDM**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|2<br>4|A<br>A|S<br>G<br>D|||D (Tab)||
|**IA**|TC = 25C|1|A||||||
|**EAS**|TC = 25C|100|mJ|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      15                   V/ns|150°C                                      15                   V/ns|150°C                                      15                   V/ns|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain||S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|
|**PD**|TC = 25C|55|W||||||
|**TJ**||-55 ... +150|C||||||
|**TJM**<br>**Tstg**||150<br>-55 ... +150|C<br>C|**Features**|||||
|**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering                    300<br>1.6 mm (0.062in.) from Case for 10s                              260|Maximum Lead Temperature for Soldering                    300<br>1.6 mm (0.062in.) from Case for 10s                              260|°C<br>°C|International Standard Packages<br>Low QG|International Standard Packages|||International Standard Packages|
|**Md**<br>**Weight**|Mounting Torque (TO-220)<br>TO-252<br>0.35|1.13 / 10         Nm/lb.in<br>0.35<br>g||Avalanche Rated<br>Low Package Inductance|||||
|TO-220|TO-220<br>3.00                        g|3.00                        g|3.00                        g||||||



G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

- International Standard Packages 

- Low QG  Avalanche Rated 

## **Advantages** 

- High Power Density 

- Easy to Mount 

>  Space Savings 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**<br>~~|~~|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>650<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~|V<br>~~|~~|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>3.0 5.0      V<br>~~|~~<br>~~|~~<br>~~|~~|5.0      V<br>~~|~~<br>~~|~~<br>~~|~~~~**|**~~<br>~~|~~|5.0      V<br>~~|~~|
|**IGSS**<br>VGS =30V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~|~~<br>~~| ~~~~**|**~~<br>~~|~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>100<br><br>~~|~~|5<br>100<br> ~~**|**~~<br>~~|7~~|5A<br>100A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|2.3<br>~~|~~|2.3|



DS100654D(6/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXTY2N65X2 IXTP2N65X2** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|**Min.       Typ.        Max**|**Min.       Typ.        Max**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|**Min.       Typ.        Max**|**Min.       Typ.        Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                     1.1           1.8                     S|, Note 1                     1.1           1.8                     S|, Note 1                     1.1           1.8                     S|
|**RGi**<br>Gate Input Resistance<br>14|14||
|**Ciss**<br>180<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>129<br>**Crss**<br>0.7|180<br>129<br>0.7|pF<br>pF<br>pF|
|**Co(er)**<br>22<br>**Co(tr)**<br>45                    pF<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|22<br>45                    pF|pF<br>45                    pF|
|**td(on)**<br>15<br>**tr**<br>19<br>**td(off)**<br>20<br>**tf**<br>14<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 50(External)|15<br>19<br>20<br>14|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>4.3<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>0.8<br>**Qgd**<br>2.1|4.3<br>0.8<br>2.1<br>-|nC<br>nC<br>nC|
|**RthJC**<br>2.27<br>**RthCS**<br>TO-220                                                              0.50|2.27<br>TO-220                                                              0.50|2.27C/W<br>TO-220                                                              0.50C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|
|---|---|---|
|**Symbol**<br>(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.       Max**||**Min.       Typ.       Max**|
|**IS**<br>VGS= 0V|2       A|2       A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM|8       A|8       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|1.4       V|1.4       V|
|**trr**<br>137<br>**QRM**<br>508<br>**IRM**<br>7.4<br>IF= 1A, -di/dt = 100A/μs<br>VR= 100V|137<br>508<br>7.4|ns<br>nC<br>A|



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**----- Start of picture text -----**<br>
TO-220 Outline<br>E oP A<br>a u A1 ab<br>Q H1<br>D D2<br>D1<br>Fa l E1<br>EJECTOR A2<br>PIN 12 oy L1<br>L<br>e c  3X b<br>—| e1 | sl 3X b2 -<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXTY2N65X2 IXTP2N65X2** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>2.0 4.0<br>V GS = 10V VGS = 10V<br>            8V 3.5           8V<br>           7V<br>1.5 3.0<br>7V<br>6V<br>2.5<br>1.0 2.0 6V<br>5.5V 1.5<br>0.5 1.0 5.5V<br>0.5 5V<br>5V<br>0.0 0.0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 4 8 12 16 20 24 28 32<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 1A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>2.0 4.5<br>V GS = 10V<br>           7V  4.0 VGS = 10V<br>3.5<br>1.5<br>6V<br>3.0<br>I D = 2A<br>2.5<br>1.0<br>2.0<br>I D = 1A<br>1.5<br>5V<br>0.5<br>1.0<br>0.5<br>4V<br>0.0 0.0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>4.5 2.2<br>VGS = 10V  2.0<br>4.0<br>1.8<br>T J  = 125 [o] C<br>3.5<br>1.6<br>3.0 1.4<br>1.2<br>2.5<br>TJ = 25 [o] C 1.0<br>2.0 0.8<br>0.6<br>1.5<br>0.4<br>1.0<br>0.2<br>0.5 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

**IXTY2N65X2 IXTP2N65X2** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>2.8 3.0<br>TJ = - 40 [o] C<br>2.4<br>2.5<br>2.0<br>2.0 25 [o] C<br>1.6<br>TJ = 125 [o] C 1.5 125 [o] C<br>1.2           25 [o] C<br>       - 40 [o] C<br>1.0<br>0.8<br>0.5<br>0.4<br>0.0 0.0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>6 10<br> VDS = 325V<br>5  I D = 1A<br>8<br> I G = 1mA<br>4<br>6<br>3<br>TJ = 125 [o] C<br>4<br>2<br>TJ  = 25 [o] C<br>2<br>1<br>0 0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy<br>1,000 5.0<br>4.5<br>Ciss<br>4.0<br>100<br>3.5<br>3.0<br>Coss<br>10 2.5<br>2.0<br>1 Crss 1.5<br>1.0<br>f = 1 MHz  0.5<br>0 0.0<br>1 10 100 1000 0 100 200 300 400 500 600<br>VDS - Volts VDS - Volts<br> - Volts<br> - Amperes GS<br>IS V<br> - MicroJoules<br>OSS<br>E<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTY2N65X2 IXTP2N65X2** 

**==> picture [524 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance<br>10 10<br>RDS(on) Limit<br>25μs<br>1 1<br>100μs<br>0.1 0.1<br> T J  = 150 o C<br> T C  = 25 o C    1ms<br> Single Pulse  DC 10ms<br>0.01 0.01<br>10 100 1,000 0.00001 0.0001 0.001 0.01 0.1 1<br>VDS - Volts Pulse Width - Second<br> - K / W<br> - Am peresID Z (th)JC<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_2N65X2(Z1-R25T50) 6-05-15-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixty2n65x2/mosfet-n-ch-650v-2a-to-252/dp/2674795)
---

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