# Power MOSFET, N Channel, 1.2 kV, 200 mA, 75 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4060242/)

**URL**: https://novapart.co/products/IXTY02N120P/power-mosfet-n-channel-12-kv-200-ma-75-ohm-to-252
**SKU**: IXTY02N120P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8080
**Stock**: 500+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar Series |
| Qualification | - |
| Power Dissipation | 33W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 1.2kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 75ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4060242/)

## **Polar[TM] Power MOSFET** 

## **IXTY02N120P IXTP02N120P** 

**V =   1200V DSS I =   0.2A D25 R  75  DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

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**----- Start of picture text -----**<br>
TO-252 (IXTY)<br>G<br>   S<br>=<br>D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|1200|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|1200|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C|0.2|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|0.6|A|
|**IA**|TC = 25C|0.2|A|
|**EAS**|TC = 25C|40|mJ|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      10                   V/ns|150°C                                      10                   V/ns|150°C                                      10                   V/ns|
|**PD**|TC = 25C|33|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-220)|1.13 / 10         Nm/lb.in||
|**Weight**|TO-252<br>0.35|0.35|g|
|TO-220|TO-220<br>3.00                        g|3.00                        g|3.00                        g|



## **TO-220 (IXTP)** 

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**----- Start of picture text -----**<br>
G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Packages 

- Low QG 

- Avalanche Rated 

- Low Package Inductance 

- Fast Intrinsic Rectifier 

## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>1200|~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 100μA<br>2.0 4.0      V|4.0      V<br>~~||—~~|4.0      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~—~~|50   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>25|1<br>25<br>~~~~~|1A<br>25A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1||75|



>  DC-DC Converters 

- Switch-Mode and Resonant-Mode 

- Power Supplies  AC and DC Motor Drives  Laser Drivers Igniters, RF Generators  Robotics and Servo Controls 

DS100201B(8/17) 

© 2017 IXYS CORPORATION, All Rights Reserved 

## **IXTY02N120P IXTP02N120P** 

|**Symbol**<br>(TJ= 25C, Unless Otherwise Specified)<br>**gfs**<br>**Ciss**|**Test Conditions                                               Characteristic Values**<br>C, Unless Otherwise Specified)**Min.       Typ.       Max**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                        0.12      0.20                   S<br>104<br>~~__~~|**Test Conditions                                               Characteristic Values**<br>C, Unless Otherwise Specified)**Min.       Typ.       Max**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                        0.12      0.20                   S<br>104<br>~~__~~|**Test Conditions                                               Characteristic Values**<br>**Min.       Typ.       Max**<br>, Note 1                        0.12      0.20                   S<br>pF|**TO-252 AA Outline**<br>L4<br>E<br> **A**<br>c2<br>H<br>A1<br>A2<br>4<br>1      2      3<br>L3<br>b3<br>~~=~~ A~~A~~|||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Coss**<br>**Crss**|VGS= 0V, VDS= 25V, f = 1MHz<br>8.6<br>1.9|8.6<br>1.9|pF<br>pF|1 - Gate<br>2,4 - Drain<br>L1<br>b2<br>e1<br>L2<br>L<br>e<br>c<br>**e1**<br>——t<br>|<br>Ee<br>Lt<br>io<br>af|||||||
|**td(on)**|6<br>**Resistive Switching Times**|6|ns|3 - Source<br>0<br>OPTIONAL<br>5.55MIN<br>- ae|3 - Source|3 - Source|3 - Source||||
|**tr**<br>**td(off)**<br>**tf**<br>**Qg(on)**<br>**Qgs**<br>**Qgd**<br>**RthJC**<br>**RthCS**|10<br>21<br>39<br>4.70<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>0.37<br>3.20<br>3.8<br>TO-220<br>0.50<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 50(External)|10<br>21<br>39<br>4.70<br>0.37<br>3.20<br>3.8<br>0.50<br>~~a~~|ns<br>ns<br>ns<br>nC<br>nC<br>nC<br>3.8C/W<br>0.50C/W|1.25MIN<br>6.50MIN<br>2.28<br>6.40<br>BOTTOM<br>VIEW<br>2.85MIN<br>LAND PATTERN RECOMMENDATION<br>4<br>| sym a CHES<br>| MILLIMETERS <br>[MIN [Max |MIN | MAX_|<br>[A | 086 | 094 | 219 | 2.38|<br>Lar [| o | 005 | oO | O12|<br>[a2 | 038 | o46 | 097 | 17_|<br>[pb<br>|025|035|064|089|<br>[b3 | coo | 21s | 5.08 | 5.46|<br>Lc | ig | 024 | 046 | ool <br>[<2|01s|0e3|0.46|058<br>[Lb<br>|e235|245|597|622|||||||



## **Source-Drain Diode** 

|(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.       Max**|**Min.       Typ.       Max**|
|---|---|
|**IS**<br>VGS= 0V|0.2       A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|0.8       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|1.3       V|
|**trr**<br>1.6<br>**IRM**<br>3.5                     A<br>**QRM**<br>2.8                  μC<br>IF= 0.2A, -di/dt = 100A/μs,<br>VR= 100V|1.6<br>3.5                     A<br>2.8                  μC|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

## **TO-220 Outline** 

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**----- Start of picture text -----**<br>
E oP A<br>a u A1 ab<br>Q H1<br>D D2<br>D1<br>Fa l E1<br>EJECTOR A2<br>PIN L1<br>1 2 3 si<br>L<br>e c  3X b<br>—| e1 aa ae 3X b2 |<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXTY02N120P IXTP02N120P** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>200<br>VGS = 10V<br>180          7V<br>         6V<br>160<br>140<br>120 5V<br>100<br>80<br>60<br>4V<br>40<br>20<br>3V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - MilliAmperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>200<br>V GS = 10V<br>180<br>          7V<br>160<br>140 6V<br>120<br>100<br>80 5V<br>60<br>40<br>20 4V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.<br>Drain Current<br>5.0<br>4.5 VGS = 10V<br>4.0<br>TJ = 125 [o] C<br>3.5<br>3.0<br>2.5<br>2.0 T J  = 25 [o] C<br>1.5<br>1.0<br>0.5<br>0 100 200 300 400 500 600 700 800 900 1000<br>ID - MilliAmperes<br> - MilliAmperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>1000<br>VGS = 10V<br>900           8V<br>         7V<br>800<br>700<br>600 6V<br>500<br>400<br>5V<br>300<br>200<br>4V<br>100<br>0<br>0 50 100 150 200 250 300 350<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.<br>Junction Temperature<br>3.0<br>2.6 VGS = 10V<br>2.2<br>I D = 200mA<br>1.8<br>I D = 100mA<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - MilliAmperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Maximum Drain Current vs. Case Temperature** 

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**----- Start of picture text -----**<br>
200<br>160<br>120<br>80<br>40<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - MilliAmperes<br>ID<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved 

**IXTY02N120P IXTP02N120P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>350 400<br>300 350 TJ = - 40 [o] C<br>300<br>250<br>25 [o] C<br>250<br>200<br>125 [o] C<br>200<br>150 TJ = 125 [o] C<br>         25 [o] C 150<br>       - 40 [o] C<br>100<br>100<br>50<br>50<br>0 0<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 50 100 150 200 250 300 350<br>VGS - Volts ID - MilliAmperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>Fig. 10. Gate Charge<br>800 10<br>700 9  VDS = 600V<br> I D = 100mA<br>8<br>600  I G = 1mA<br>7<br>500<br>6<br>400 5<br>300 4<br>TJ = 125 [o] C 3<br>200<br>TJ  = 25 [o] C 2<br>100<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance<br>1,000 10<br>f = 1 MHz<br>C iss<br>100<br>1<br>Coss<br>10<br>Crss<br>1 0.1<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - MilliAmperes  - MilliSiemens<br>ID gf s<br> - Volts<br>GS<br> - MilliAmperes V<br>IS<br> - K / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_02N120P(F2) 10-01-09 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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