# MOSFET, P-CH, 500V, 40A, PLUS247

![Product image](https://novapart.co/image/farnell:3771279/)

**URL**: https://novapart.co/products/IXTX40P50P./mosfet-p-ch-500v-40a-plus247
**SKU**: IXTX40P50P.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €11.1000
**Stock**: 50+
**Lead Time**: 298 days (indicative)

## Description

Channel Type:P Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | PolarP Series |
| Qualification | - |
| Power Dissipation | 890W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PLUS247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.23ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771279/)

## **PolarP[TM] Power MOSFET** 

## **IXTK40P50P IXTX40P50P** 

**V =    - 500V DSS I =    - 40A D25 R  230m  DS(on)** 

P-Channel Enhancement Mode 

Avalanche Rated 

||||**TO-264 (IXTK)**|**TO-264 (IXTK)**||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oe~~||||S<br>G<br>D||||
|**VDSS**|TJ = 25C to 150C|- 500|V|||Tab||
|**VDGR**|TJ = 25C to 150C, RGS= 1M|- 500|V|||||
|**VGSS**|Continuous|20|V<br>**PLUS247 (IXTX)**|||||
|**VGSM**|Transient|30|V|||||
|**ID25**|TC = 25C|- 40|A|||||
|**IDM**|TC = 25C, Pulse Width Limited by TJM|- 120|A|||||
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C|- 40<br>3.5|A<br>J|G<br>D S||Tab||
||||G  =  Gate<br>D     =  Drain||D     =  Drain|D     =  Drain||
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C|10|V/ns<br>S  =  Source<br>Tab  =  Drain|||Tab  =  Drain||
|**PD**|TC = 25C|890|W|||||
|**TJ**||-55 ... +150|C|||||
|**TJM**||150|C|||||
|**Tstg**||-55 ... +150|C<br>**Features**|||||
|**TL**<br>**TSOLD**<br>**Md**<br>Mounting  Torque (TO-264)                                     1.13/10          Nm/lb.in|Maximum Lead Temperature for Soldering                    300<br>1.6 mm (0.062in.) from Case for 10s                              260<br>Mounting  Force (PLUS247)                       20..120/4.5..27                 N/lb<br>Mounting  Torque (TO-264)                                     1.13/10          Nm/lb.in|Maximum Lead Temperature for Soldering                    300<br>°C<br>1.6 mm (0.062in.) from Case for 10s                              260<br>°C<br>Mounting  Force (PLUS247)                       20..120/4.5..27                 N/lb<br>Mounting  Torque (TO-264)                                     1.13/10          Nm/lb.in<br>International Standard Packages<br>Rugged PolarPTMProcess<br>Avalanche Rated<br>Fast Intrinsic Diode||||||
|**Weight**|PLUS247|6|g<br>Low Package Inductance|||||
||TO-264|10                     g|10                     g|||||



- International Standard Packages 

## **Advantages** 

- Easy to Mount 

- Space Savings 

## **Symbol Test Conditions                                              Characteristic Values** 

|(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250A<br>- 500|~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= -1mA<br>- 2.0                  - 4.5    V|- 2.0                  - 4.5    V<br>~~||~~|- 2.0                  - 4.5    V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~||~~<br>~~||~~|100 nA|
|**IDSS**<br>VDS = VDSS, VGS=  0V<br>- 50<br>TJ= 125C<br>- 250<br>~~|~~|- 50<br>- 250<br>~~_~~<br>~~||~~|- 50A<br>- 250A|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25,  Note 1<br>230  m<br>~~|~~|230  m<br>~~_~~<br>~~||~~|230  m|



- High Power Density 

## **Applications** 

- High-Side Switches 

- Push Pull Amplifiers 

- DC Choppers 

- Automatic Test Equipment 

- Current Regulators 

DS99935D(6/15) 

© 2015 IXYS CORPORATION, All Rights Reserved 

## **IXTK40P50P IXTX40P50P** 

|(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|
|---|---|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25, Note 1                        23           38|, Note 1                        23           38|
|**Ciss**<br>11.5<br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br>1150<br>**Crss**<br>93|11.5<br>1150<br>93|
|**td(on)**<br> <br>**tr**<br>59<br>**td(off)**<br>90<br>**tf**<br>34<br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|37<br>59<br>90<br>34|
|**Qg(on)**<br>205<br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>55<br>**Qgd**<br>75|205<br>55<br>75|
|**RthJC**<br>0.14<br>**RthCS**<br>0.15|0.14<br>0.15|



## **Source-Drain Diode** 

|**Symbol**|**Test Conditions                                                 Characteristic Values**|**Test Conditions                                                 Characteristic Values**|**Test Conditions                                                 Characteristic Values**|**Test Conditions                                                 Characteristic Values**|
|---|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**||
|**IS**|VGS= 0V|- 40     A|- 40     A|- 40     A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|-160     A|-160     A|-160     A|
|**VSD**|IF= - 20A, VGS= 0V, Note 1|- 3.0     V|- 3.0     V|- 3.0     V|
|**trr**<br>**QRM**<br>**IRM**|477<br>14.5<br>**RM**- 61<br>IF= - 20A, -di/dt = -150A/s<br>VR= -100V, VGS= 0V|477<br>14.5<br>- 61|ns<br>C<br>A||



|**TO-264 AA Outline**|**TO-264 AA Outline**|Terminals:<br>1 - Gate<br>2 - Drain<br>**TO-264 AA Outline**|Terminals:<br>1 - Gate<br>2 - Drain<br>**TO-264 AA Outline**|Terminals:<br>1 - Gate<br>2 - Drain<br>**TO-264 AA Outline**|Terminals:<br>1 - Gate<br>2 - Drain<br>**TO-264 AA Outline**|
|---|---|---|---|---|---|
||Dim.|Millimeter<br>Min.<br>Max.|3 - Source<br>4 - Drain<br>Inches<br>Min.<br>Max.|||
||A<br>A1|4.82<br>5.13<br>2.54<br>2.89|.190<br>.100|.202<br>.114||
||A2<br>b|2.00<br>2.10<br>1.12<br>1.42|.079<br>.044|.083<br>.056||
||b1<br>b2|2.39<br>2.69<br>2.90<br>3.09|.094<br>.114|.106<br>.122||
||c<br>D|0.53<br>0.83<br>25.91<br>26.16|.021<br>1.020|.033<br>1.030||
||E<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.215 BSC|.786<br>.215 BSC||
||J|0.00<br>0.25|.000|.010||
||K|0.00<br>0.25|.000|.010||
||L|20.32<br>20.83|.800|.820||
||L1|2.29<br>2.59|.090|.102||
||P|3.17<br>3.66|.125|.144||
||Q|6.07<br>6.27|.239|.247||
||Q1|8.38<br>8.69|.330|.342||
||R|3.81<br>4.32|.150|.170||
||R1|1.78<br>2.29|.070|.090||
||S|6.04<br>6.30|.238|.248||
||T|1.57<br>1.83|.062|.072||



## **PLUS247[TM] Outline** 

Note       1:  Pulse test, t  300s, duty cycle, d  2%. 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>D<br>E|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>L<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



- IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

- IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTK40P50P IXTX40P50P** 

**==> picture [538 x 640] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-40 -90<br>-35 V        - 7V  GS = -10V -80 VGS = -10V<br>-70<br>-30 - 7V<br>-60<br>-25<br>- 6V -50<br>-20<br>-40<br>-15 - 6V<br>-30<br>-10<br>-20<br>-5 - 5V -10<br>- 5V<br>0 0<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 0 -5 -10 -15 -20 -25 -30<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = - 20A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br> Junction Temperature<br>-40 2.4<br>V GS = -10V<br>-35         - 7V   VGS = -10V<br>2.0<br>-30<br>I  D  = - 40A<br>-25 - 6V 1.6<br>I D = - 20A<br>-20<br>1.2<br>-15<br>-10<br>0.8<br>- 5V<br>-5<br>0 0.4<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 20A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.4 -45<br>2.2 VGS = -10V -40<br>T J = 125ºC -35<br>2.0<br>-30<br>1.8<br>-25<br>1.6<br>-20<br>1.4<br>-15<br>1.2<br>-10<br>T J = 25ºC<br>1.0 -5<br>0.8 0<br>0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION, All Rights Reserved 

**IXTK40P50P IXTX40P50P** 

**==> picture [262 x 425] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>-70<br>-60<br>-50<br>-40<br>-30 TJ = 125ºC<br>          25ºC<br>        - 40ºC<br>-20<br>-10<br>0<br>-3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-140<br>-120<br>-100<br>-80<br>-60<br>T J = 125ºC<br>-40 T J   = 25ºC<br>-20<br>0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

**==> picture [253 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>TJ = - 40 º C<br>60<br>50<br>25ºC<br>40<br>30 125ºC<br>20<br>10<br>0<br>0 -10 -20 -30 -40 -50 -60 -70<br>ID - Amperes<br>Fig. 10. Gate Charge<br>-10<br>-9  V DS = - 250V<br>-8  I  D  = - 20A<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [533 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000 - 1000<br>f = 1 MHz<br>Ciss R DS(on)  Limit<br>10,000 - 100<br>25µs<br>100µs<br>Coss<br>1,000 - 10 1ms<br>10ms<br>100ms<br>100 - 1<br>TJ = 150ºC DC<br>Crss T C  = 25ºC<br>Single Pulse<br>10 - 0.1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 10 - 100 - 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

**IXTK40P50P IXTX40P50P** 

**==> picture [538 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC  / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_40P50P(B9) 03-06-08-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtx40p50p/mosfet-p-ch-500v-40a-plus247/dp/3771279)
---

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