# MOSFET, N-CH, 100V, 200A, PLUS247

![Product image](https://novapart.co/image/farnell:3771278/)

**URL**: https://novapart.co/products/IXTX200N10L2./mosfet-n-ch-100v-200a-plus247
**SKU**: IXTX200N10L2.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €18.9300
**Stock**: 200+
**Lead Time**: 298 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | LinearL2 Series |
| Qualification | - |
| Power Dissipation | 1.04kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PLUS247 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200A |
| Drain Source On State Resistance | 11mohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771278/)

## Advance Technical  Information 

## **Linear L2[TM] Power MOSFET w/ Extended FBSOA** 

## **IXTK200N10L2 IXTX200N10L2** 

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|100|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|100|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C (Chip Capability)|200|A|
|**ILRMS**|Lead Current Limit, (RMS)|160|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|500|A|
|**IA**|TC = 25°C|100|A|
|**EAS**|TC = 25°C|5|J|
|**PD**|TC = 25°C|1040|W|
|**TJ**||-55...+150|°C|
|**TJM**||150|°C|
|**Tstg**||-55...+150|°C|
|**TL**|1.6mm (0.063 in.) from Case for 10s|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (IXTK)|1.13/10         Nm/lb.in.|1.13/10         Nm/lb.in.|
|**FC**|Mounting Force   (IXTX)|20..120 / 4.5..27|N/lb.|
|**Weight**|TO-264|10|g|
||PLUS247|6|g|



**V =  100V DSS I =   200A D25 R <   11m Ω DS(on)** 

## **TO-264 (IXTK)** 

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**----- Start of picture text -----**<br>
G<br>D S     Tab<br>**----- End of picture text -----**<br>


## **PLUS247(IXTX)** 

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**----- Start of picture text -----**<br>
G<br>D     Tab<br>S<br>**----- End of picture text -----**<br>


G   =  Gate D      =  Drain S   =  Source Tab   =  Drain 

## **Features** 

Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.        Max.**|**Min.      Typ.        Max.**|**Min.      Typ.        Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.        Max.**<br>~~|~~|**Min.      Typ.        Max.**<br>~~|~~|**Min.      Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>100<br>~~|~~|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 3mA<br>2.0<br>~~|~~|4.5  V<br>~~|a~~|4.5  V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>|±<br>~~a~~|±200    nA|
|**IDSS**<br>VDS =  VDSS, VGS=  0V<br>10<br>TJ= 125°C<br>250<br><br>~~|~~|10<br>250<br>~~a~~<br>~~|~~|10μA<br>250μA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>11   m<br><br>~~|~~|11   m<br>~~a~~<br>~~|~~|11   mΩ|



## **Applications** 

Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 

DS100239(2/10) 

© 2010 IXYS CORPORATION, All Rights Reserved 

## **IXTK200N10L2 IXTX200N10L2** 

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**----- Start of picture text -----**<br>
Symbol Test Conditions                                                Characteristic Values<br> (TJ = 25°C, Unless Otherwise Specified)  Min.      Typ.        Max.  TO-264 (IXTK) Outline<br>gfs VDS= 10V, ID = 60A, Note 1                                55           73           90        S<br>Ciss                 23 nF<br>Coss VGS = 0V, VDS = 25V, f = 1MHz             3200 pF<br>Crss               610 pF<br>t                 40 ns<br>d(on) Resistive Switching Times<br>tr               225 ns<br>t VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25               127 ns      1 - Gate     2 - Drain<br>td(off)f RG  = 1Ω (External)                 27 ns      3 - Source     4 - Drain<br>Dim. Millimeter Inches<br>Q               540 nC Min. Max. Min. Max.<br>g(on)<br>Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25               115 nC AA1 2.544.82 2.895.13 .100.190 .114.202<br>Q               226 nC A2 2.00 2.10 .079 .083<br>gd b 1.12 1.42 .044 .056<br>b1 2.39 2.69 .094 .106<br>RthJC              0.12  °C/W b2 2.90 3.09 .114 .122<br>RthCS              0.15      °C/W cD 25.910.53 26.160.83 1.020.021 1.030.033<br>E 19.81 19.96 .780 .786<br>e 5.46 BSC .215 BSC<br>J 0.00 0.25 .000 .010<br>K 0.00 0.25 .000 .010<br>Safe-Operating-Area Specification LL1 20.322.29 20.832.59 .090.800 .102.820<br>P 3.17 3.66 .125 .144<br>Symbol Test Conditions                                                Characteristic Values Q 6.07 6.27 .239 .247<br>                                                                       Min.        Typ.        Max. Q1R 8.383.81 8.694.32 .150.330 .170.342<br>SOA VDS =  100V, ID = 6.25A, TC = 75°C, tp = 5s     625 W R1S 1.786.04 2.296.30 .070.238 .090.248<br>TT A T 1.57 1.83 .062 .072<br> PLUS 247 [TM]  (IXTX) Outline<br>Source-Drain Diode<br>Symbol Test Conditions                                                Characteristic Values<br> (TJ = 25°C, Unless Otherwise Specified)                                  Min.       Typ.        Max.<br>IS VGS = 0V                 200     A<br>ISM Repetitive, Pulse Width Limited by TJM                 800     A<br>VSD IF = 100A, VGS = 0V, Note 1                1.4     V<br>ItQRMrrRM | IVF = 100A, -di/dt = 100A/R                                                                                     245                                                                                   24.4                                                                                     3.0= 50V, VGS = 0V μs, μCnsA Terminals: SR 1 - Gate L ] Re<br>2 - Drain<br>3 - Source<br>—S= i<br>Dim. Millimeter Inches<br>Note     1. Pulse test, t ≤ 300μs, duty cycle, d  ≤ 2%. Min. Max. Min. Max.<br>A 4.83 5.21 .190 .205<br>A1 2.29 2.54 .090 .100<br>A2 1.91 2.16 .075 .085<br>b 1.14 1.40 .045 .055<br>ADVANCE TECHNICAL INFORMATION b1 1.91 2.13 .075 .084<br>b2 2.92 3.12 .115 .123<br>The product presented herein is under development.  The Technical Specifications offered are derived C 0.61 0.80 .024 .031<br>from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a D 20.80 21.34 .819 .840<br>"considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test E 15.75 16.13 .620 .635<br>conditions, and dimensions without notice. e 5.45 BSC .215 BSC<br>L 19.81 20.32 .780 .800<br>L1 3.81 4.32 .150 .170<br>Q 5.59 6.20 .220 0.244<br>R 4.32 4.83 .170 .190<br>IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br>IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2<br>by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br>


**IXTK200N10L2 IXTX200N10L2** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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200<br>V GS = 20V<br>180          14V<br>         12V<br>160          10V<br>140 8V<br>120<br>7V<br>100<br>80<br>60<br>6V<br>40<br>20<br>4V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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350<br>VGS = 20V<br>300<br>12V<br>10V<br>250<br>8V<br>200<br>150<br>7V<br>100<br>50<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature** 

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200 2.8<br>VGS = 20V<br>180          14V  VGS = 10V<br>         12V 2.4<br>160         10V<br>140<br>2.0<br>120 I D = 200A<br>8V<br>100 1.6<br>I D = 100A<br>80<br>1.2<br>60 6V<br>40<br>0.8<br>20<br>4V<br>0 0.4<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 100A Value vs.  Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.4 180<br>2.2 V           20V   GS = 10V   - - - - TJ = 125ºC 160 External Lead Current Limit<br>2.0 140<br>1.8 120<br>1.6 100<br>1.4 80<br>1.2 60<br>TJ = 25ºC<br>1.0 40<br>0.8 20<br>0.6 0<br>0 40 80 120 160 200 240 280 320 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

**IXTK200N10L2 IXTX200N10L2** 

**Fig. 7. Input Admittance** 

## **Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
200 140<br>180 TJ = - 40ºC<br>120<br>160<br>25ºC<br>140 100<br>125ºC<br>120<br>80<br>100 TJ = 125ºC<br>          25ºC 60<br>80 - 40ºC<br>60 40<br>40<br>20<br>20<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 40 60 80 100 120 140 160 180 200 220<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>320 16<br> VDS = 50V<br>280 14  I D = 100A<br> I G = 10mA<br>240 12<br>200 10<br>160 8<br>120 6<br>80 TJ = 125ºC 4<br>T J   = 25ºC<br>40 2<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 Fig. 12. Maximum Transient Thermal Impedance 100 200 300 400 500 600 700 800<br>VSD - Volts 1.000 QG - NanoCoulombs<br>Fig. 11. Capacitance      Fig. 12. Maximum Transient Thermal Impedance<br>100,000 0.200 ggg<br>f = 1 MHz<br>0.100<br>Ciss<br>10,000<br>C oss 0.010<br>1,000<br>C rss<br>100 0.001<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - VoltsDS - Volts - Volts Pulse Width - Seconds<br> - Amperes  - Siemens<br>ID gf s<br> - Volts<br> - AmperesIS VGS<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


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100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>C oss<br>1,000<br>C rss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - VoltsDS - Volts - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTK200N10L2 IXTX200N10L2** 

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**----- Start of picture text -----**<br>
Fig. 13. Forward-Bias Safe Operating Area<br>@ TC = 25ºC<br>1,000<br>RDS(on) Limit<br>25µs<br>100µs<br>100<br>External Lead Limit<br>1ms<br>10ms<br>100ms<br>10 DC<br>T J = 150ºC<br>TC = 25ºC<br>Single Pulse<br>1<br>1 10 100<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 14. Forward-Bias Safe Operating Area<br>@ TC = 75ºC<br>1,000<br>RDS(on) Limit<br>25µs<br>100 100µs<br>1ms<br>10ms<br>10<br>100ms<br>DC<br>TJ = 150ºC<br>TC = 75ºC<br>Single Pulse<br>1<br>1 10 100<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_200N10L2(9R)1-26-10 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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---

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