# Power MOSFET, N Channel, 200 V, 80 A, 0.032 ohm, TO-268 (D3PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4060241/)

**URL**: https://novapart.co/products/IXTT80N20L/power-mosfet-n-channel-200-v-80-a-0032-ohm-to-268
**SKU**: IXTT80N20L
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €10.9500
**Stock**: 200+
**Lead Time**: 267 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Linear Series |
| Qualification | - |
| Power Dissipation | 520W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-268 (D3PAK) |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 0.032ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4060241/)

## Advance Technical Information 

## **Linear[[TM]]** 

## **Linear[[TM]] IXTT80N20L Power MOSFET IXTH80N20L w/ Extended FBSOA** 

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|200                    V|200                    V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|200                          V|200                          V|
|**VGSS**|Continuous|±20                       V|20                       V|
|**VGSM**|Transient|±30                            V|30                            V|
|**ID25**|TC = 25°C<br>80|80|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM340|340|A|
|**IA**|TC = 25°C<br>80|80|A|
|**EAS**|TC = 25°C                                                                     2.5|C                                                                     2.5|J|
|**PD**|TC = 25°C                                                                    520|C                                                                    520|W|
|**TJ**|-55 to +150|-55 to +150|-55 to +150°C|
|**TJM**|+150|+150|+150°C|
|**Tstg**-55 to +150|-55 to +150|-55 to +150|°C|
|**TL**|1.6mm (0.063in) from Case for 10s                             300|1.6mm (0.063in) from Case for 10s                             300|°C|
|**TSOLD**|Plastic Body for 10s                                                      260|Plastic Body for 10s                                                      260|Plastic Body for 10s                                                      260°C|
|**Md**|Mounting Torque  (TO-247)                                  1.13/10             Nm/lb.in.|Mounting Torque  (TO-247)                                  1.13/10             Nm/lb.in.||
|**Weight**|TO-268                                                                          4                         g|TO-268                                                                          4                         g|TO-268                                                                          4                         g|
||TO-247                                                                           6                         g|TO-247                                                                           6                         g|TO-247                                                                           6                         g|



**V =   200V DSS I =   80A D25 R ≤ 32m Ω DS(on)** 

**==> picture [109 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268 (IXTT)<br>G<br>S<br>D (Tab)<br>TO-247 (IXTH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75°C 

## **Advantages** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>200|~~_~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.0<br>~~|_|~~|4.0<br>~~_~~<br>~~|_|~~|4.0<br>V<br>~~|_|~~|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|_|~~|±<br>~~|_|~~|±100<br>nA<br>~~|_|~~|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125°C<br>250<br>~~|_|~~|25<br>250<br>~~|_|~~<br>~~=~~<br>~~rd~~|25μA<br>250μA<br>~~|_|~~<br>~~rd~~|
|**RDS(on)**<br>VGS= 10V, ID= 0.5 • ID25, Note 1<br>32   m|32   m<br>~~=~~<br>~~rd~~|32   mΩ<br>~~rd~~|



Easy to Mount Space Savings High Power Density 

## **Applications** 

Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 

© 2010 IXYS CORPORATION, All Rights Reserved 

DS100294(11/10) 

**IXTT80N20L IXTH80N20L** 

|**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|
|---|---|---|---|---|
|**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1|30|45|S|
|**Ciss**|||6160|pF|
|**Coss**|VGS= 0V, VDS= 25V, f = 1MHz||1170|pF|
|**Crss**|||520|pF|
|**td(on)**|**Resistive Switching Times**||29|ns|
|**tr**<br>**td(off)**<br>**tf**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2Ω(External)|<br> <br>|44<br>72<br>29|ns<br>ns<br>ns|
|**Qg(on)**|||180|nC|
|**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||30|nC|
|**Qgd**|||95|nC|
|**RthJC**||||0.24 °C/W|
|**RthCS**|TO-247||0.21|°C/W|



## **Safe Operating Area Specification** 

|||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|
|**SOA**|VDS= 200V, ID= 0.75A, TC= 75°C,|tp= 3s 150||W|



## **Source-Drain Diode** 

||||
|---|---|---|
|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.        Max.**|||
|**IS**<br>VGS= 0V||80     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||320      A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5     V|
|**trr**<br> <br>IF= IS, -di/dt = 100A/μs,<br>VR= 100V, VGS= 0V|250|ns|



Note       1.    Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **TO-268 Outline** 

**==> picture [157 x 115] intentionally omitted <==**

**==> picture [131 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Terminals: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br>


||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|||||||||**1**|||**2**||**3**||∅P||||||||
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||||||||||||||||||||||||
||||||||||||||~~e~~||||||||||
||Terminals:||||||||1 -|||Gate||||2 - Drain|||||||
||||||||||3 -|||Source|||||||||||
|||Dim.||||Millimeter<br>Min.<br>Max.||||||||||Inches<br>Min.<br>Max.|||||||
||||A||||4.7||||||5.3|||.185|||.209||||
||||A1||||2.2||||||2.54|||.087|||.102||||
||||A2||||2.2||||||2.6|||.059|||.098||||
||||b||||1.0||||||1.4|||.040|||.055||||
||||b1|||1.65|||||||2.13|||.065|||.084||||
||||b~~2~~|||2.87|||||||3.12|||.113|||.123||||
||||C|||||.4|||||.8|||.016|||.031||||
||||D|||20.80|||||||21.46|||.819|||.845||||
||||E|||15.75|||||||16.26|||.610|||.640||||
||||e|||5.20|||||||5.72||0.205 0.225||||||||
||||L|||19.81|||||||20.32|||.780|||.800||||
||||L1||||||||||4.50||||||.177||||
||||∅P|||3.55|||||||3.65|||.140|||.144||||
||||Q|||5.89|||||||6.40||0.232 0.252||||||||
||||R|||4.32|||||||5.49|||.170|||.216||||
||||S|||6.15|||||BSC|||||242 BSC|||||||
||||||||||||||||||||||||



IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTT80N20L IXTH80N20L** 

**==> picture [538 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>80 250<br>V GS = 10V VGS = 10V<br>70            9V 225<br>           8V<br>200 9V<br>60<br>7V 175 8V<br>50<br>150<br>40 6V 125<br>7V<br>100<br>30<br>75<br>20 6V<br>50<br>5V<br>10<br>25 5V<br>0 0<br>0 0.5 1 1.5 2 2.5 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 40A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>80 2.6<br>VGSGS = 10V<br>70            9V 2.4 V GS = 10V<br>           8V 2.2<br>60<br>7V 2.0<br>I D = 80A D = 80A = 80A<br>50 1.8<br>6V 1.6 I D = 40A  D = 40A  = 40A<br>40<br>1.4<br>30 1.2<br>1.0<br>20<br>0.8<br>5V<br>10<br>0.6<br>0 0.4<br>0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
80 2.6<br>VGSGS = 10V<br>70            9V 2.4 V GS = 10V<br>           8V 2.2<br>60<br>7V 2.0<br>I D = 80A D = 80A = 80A<br>50 1.8<br>6V 1.6 I D = 40A  D = 40A  = 40A<br>40<br>1.4<br>30 1.2<br>1.0<br>20<br>0.8<br>5V<br>10<br>0.6<br>0 0.4<br>0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>3.2 90<br>3.0 V GS = 10V  80<br>2.8<br>2.6 TJ = 125ºC 70<br>2.4 60<br>2.2<br>50<br>2.0<br>40<br>1.8<br>1.6 30<br>1.4<br>20<br>1.2 T J  = 25ºC<br>10<br>1.0<br>0.8 0<br>0 20 40 60 80 100 120 140 160 180 200 220 240 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

**IXTT80N20L IXTH80N20L** 

**==> picture [261 x 638] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>100<br>90<br>80<br>70<br>60<br>50 TJ = 125ºC<br>          25ºC<br>40<br>        - 40ºC<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>240<br>200<br>160<br>120<br>80 T J = 125ºC<br>TJ  = 25ºC<br>40<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>C iss<br>Coss<br>1,000<br>Crss<br>f = 1 MHz<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**==> picture [261 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>60<br>T J = - 40ºC<br>50<br>25ºC<br>40<br>125ºC<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [252 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9  V DS = 100V<br>8  I D = 40A<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [255 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTT80N20L IXTH80N20L** 

## **Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC** 

**Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC** 

**==> picture [529 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>RDS(on) Limit 25µs RDS(on) Limit<br>100 100 25µs<br>100µs<br>100µs<br>1ms<br>1ms<br>10 10ms 10<br>10ms<br>100ms<br>1 DC 1 100ms<br>TJ = 150ºC TJ = 150ºC DC<br>T C  = 25ºC TC = 75ºC<br>Single Pulse  Single Pulse<br>0.1 0.1<br>1 10 100 1000 1 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_80N20L(8X)10-29-10 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtt80n20l/mosfet-n-ch-200v-80a-to-268/dp/4060241)
---

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