# Power MOSFET, N Channel, 100 V, 16 A, 0.064 ohm, TO-268 (D3PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3930030/)

**URL**: https://novapart.co/products/IXTT16N10D2/power-mosfet-n-channel-100-v-16-a-0064-ohm-to-268
**SKU**: IXTT16N10D2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.7200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 830W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | TO-268 (D3PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 0.064ohm |
| Gate Source Threshold Voltage Max | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930030/)

## **Depletion Mode MOSFET** 

**V =     100V DSX I >     16A D(on) R  64m  DS(on)** 

## **IXTT16N10D2 IXTH16N10D2** 

**==> picture [210 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G TO-268 (IXTT)<br>S G<br>S<br>D (Tab)<br>gs TO-247 (IXTH)<br>V<br>V<br>20 V<br>30 V G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


## **N-Channel** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratingss**|
|---|---|---|---|
|**VDSX**|TJ = 25C to 175C|100|V|
|**VDGX**|TJ = 25C to 175C, RGS= 1M|100|V|
|**VGSX**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**PD**|TC = 25C|830|W|
|**TJ**||- 55 ... +175|C|
|**TJM**||175|C|
|**Tstg**||- 55 ... +175|C|
|**TL**|Maximum Lead Temperature for Soldering                    300||°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-247)                                   1.13 / 10|Mounting Torque (TO-247)                                   1.13 / 10|Nm/lb.in|
|**Weight**|**Weight**TO-268|4|g|
|TO-247                                                                                                        6                             g|TO-247                                                                                                        6                             g|TO-247                                                                                                        6                             g|TO-247                                                                                                        6                             g|



G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- Normally ON Mode 

- International Standard Packages 

- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVDSX**<br>VGS = - 5V, ID= 250A                                     100<br>~~|~~|~~a~~<br>~~||~~|V|
|**VGS(off)**<br>VDS = 25V, ID= 4mA<br>- 2.0                        - 4.5     V<br>~~|~~<br>~~|~~|- 2.0                        - 4.5     V<br>~~||~~<br>~~|~~|- 2.0                        - 4.5     V|
|**IGSX**<br>VGS =20V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~| |~~<br>~~|~~|100<br>nA|
|**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>5<br>TJ= 150C<br>250<br>~~|~~<br>~~|~~|5<br>250<br>~~|~~~<br>~~|~~|5<br>A<br>250A|
|**RDS(on)**<br>VGS = 0V, ID= 8A, Note 1<br>64<br><br>~~|~~|64<br>~~~~~<br>~~|~~|64 m|
|**ID(on)**<br>VGS = 0V, VDS= 25V, Note 1<br>16<br>~~|~~|~~|~~|A|



## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- Audio Amplifiers 

- Start-up Circuits 

- Protection Circuits 

- Ramp Generators 

- Current Regulators 

- Active Loads 

DS100258D(7/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTT16N10D2 IXTH16N10D2** 

|**Symbol**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|
|---|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**|C, Unless Otherwise Specified)<br>VDS= 20V, ID= 8A, Note 1                                 7           11<br>VGS= -10V, VDS=  25V, f = 1MHz<br>**Resistive Switching Times**|**Min.      Typ.      Max.**<br>= 8A, Note 1                                 7           11<br>5700<br>1980<br>940<br>|**Min.      Typ.      Max.**<br>= 8A, Note 1                                 7           11<br>5700<br>1980<br>940<br> 45<br>~~—~~|**Min.      Typ.      Max.**<br>S<br>pF<br>pF<br>pF<br>ns|
|**tr**<br>**td(off)**<br>**tf**|VGS=<br>+5V, VDS= 50V, ID= 8A<br>RG= 3.3(External)|43<br>340<br>70|43<br>340<br>70|ns<br>ns<br>ns|
|**Qg(on)**||225|225|nC|
|**Qgs**|VGS=<br>+5V, VDS= 50V, ID= 8A<br>~~_~~|22|22|nC|
|**Qgd**||126|126|nC|
|**RthJC**||0.18|0.18|0.18C/W|
|**RthCS**|TO-247                                                                        0.21|TO-247                                                                        0.21|TO-247                                                                        0.21|C/W|



**TO-268 Outline** 

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Terminals: 1 - Gate 2,4  - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **Safe-Operating-Area Specification** 

|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||
|---|---|---|---|---|
|**Symbol**|**Test Conditions**<br>**Min.      Typ.        Max.**|**Min.      Typ.        Max.**|**Min.      Typ.        Max.**||
|**SOA**|VDS= 100V, ID= 5.6A, TC= 75C, tp = 5s         556|||W|



## **TO-247 Outline** 

## **Source-Drain Diode** 

|**Symbol**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**<br>**VSD**<br>IF= 16A, VGS= -10V, Note 1<br>0.80           1.30     V|**Min.      Typ.       Max.**<br>0.80           1.30     V|
|**trr**<br>205<br>**IRM**8.50                        A<br>**QRM**0.88                  μC<br>IF= 8A, -di/dt = 100A/s<br>VR= 100V, VGS= -10V|205<br>8.50                        A<br>0.88                  μC|



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D A<br> A2  A2 A E B  0P O 0K M  D B M+<br>= — —<br>fl R [e]   + £ [e] 3 Q S  D2 ,/ rom   +<br>f  D1<br>D<br>0P1<br>] 4<br>Ho 1 2 3 ixys option A a [a]<br> L1<br>C<br> E1<br>L<br> A1 | i b I? " !<br>c  b2<br> b4 e PINS:  1 - Gate<br>O  J  M  C  A M+            2, 4 - Drain |<br>           3 - Source<br>**----- End of picture text -----**<br>


Note  1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTT16N10D2 IXTH16N10D2** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>16 240<br>14 V          4V  GS = 5V 220 V GS = 5V<br>          3V   200<br>12 180<br>4V<br>2V 160<br>10<br>140<br>8 1V 120 3V<br>100<br>6<br>80 2V<br>0V<br>4 60<br>-1V  1V<br>40<br>2  0V<br>- 2V 20 -1V<br>0 0 -2V<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 20 25 30 35<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 150 [o] C Fig. 4. Drain Current @ TJ = 25 [o] C<br>16 30<br>VGS = 5V VGS = 0V<br>14          2V<br>25<br>1V<br>12<br>20 - 0.4V<br>10<br>0V<br>8 15<br>- 0.5V - 0.8V<br>6<br>10<br>-1V - 1.2V<br>4<br>-1.5V 5 - 1.6V<br>2<br>- 2V - 2.0V<br>0 - 2.5V 0 - 2.4V<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50<br>VDS - Volts VDS - Volts<br>Fig. 5. Drain Current @ TJ = 100 [o] C Fig. 6. Dynamic Resistance vs. Gate Voltage<br>30 1.E+10<br>VGS = 0V  1.E+09 ∆VDS = 50V - 25V<br>25<br>1.E+08<br>- 0.4V<br>20 1.E+07<br>1.E+06<br>- 0.8V<br>15 TJ = 25 [o] C<br>1.E+05<br>- 1.2V TJ = 100 [o] C<br>10 1.E+04<br>- 1.6V 1.E+03<br>5<br>- 2.0V 1.E+02<br>- 2.4V<br>0 1.E+01<br>0 10 20 30 40 50 -5 -4 -3 -2 -1 0<br>VDS - Volts VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br> - Ohms<br> - Amperes O<br>ID R<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

**IXTT16N10D2 IXTH16N10D2** 

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**----- Start of picture text -----**<br>
Fig. 8. RDS(on) Normalized to ID = 8A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>1.4 2.5<br>V GS  = 0V  VGS = 0V<br>1.3 I D = 8A                 5V<br>2.0<br>TJ = 25 [o] C<br>1.2<br>TJ = 150 [o] C<br>1.5<br>1.1<br>1.0<br>1.0<br>TJ = 150 [o] C<br>0.5<br>0.9<br>TJ = 25 [o] C<br>0.8 0.0<br>-50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40<br>TJ - Degrees Centigrade ID - Amperes<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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Fig. 9. Input Admittance<br>Fig. 10. Transconductance<br>60 35<br>VDS = 20V  VDS = 20V  TJ = - 40 [o] C<br>30<br>50<br>25 [o] C<br>25 150 [o] C<br>40<br>20<br>30<br>15<br>TJ = 150 [o] C<br>20           25 [o] C<br>10<br>        - 40 [o] C<br>10<br>5<br>0 0<br>-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0 10 20 30 40 50 60<br>VGS - Volts ID - Amperes<br>Fig. 11. Normalized Breakdown and Threshold<br>Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>1.3 50<br>45 VGS = -10V<br>1.2 40<br>V GS(off)  @ V DS  = 25V 35<br>1.1 30<br>25<br>BVDSX @ VGS = - 5V<br>1.0 20<br>15 TJ = 150 [o] C<br>0.9 10 TJ = 25 [o] C<br>5<br>0.8 0<br>-50 -25 0 25 50 75 100 125 150 175 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>TJ - Degrees Centigrade VSD - Volts<br> - Siemens<br> - AmperesID gf s<br>BV / VGS(off)  - AmperesIS<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXTT16N10D2 IXTH16N10D2** 

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**----- Start of picture text -----**<br>
Fig. 13. Capacitance Fig. 14. Gate Charge<br>100,000 5<br>f = 1 MHz  4  VDS = 50V<br> I  D  = 8A<br>3<br> I  G  = 10mA<br>2<br>10,000 Ciss<br>1<br>0<br>Coss<br>-1<br>1,000<br>-2<br>-3<br>C rss<br>-4<br>100 -5<br>0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 160 180 200 220 240<br>VDS - Volts QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 15. Forward-Bias Safe Operating Area @ TC = 25[o] C** 

**Fig. 16. Forward-Bias Safe Operating Area @ TC = 75[o] C** 

**==> picture [538 x 405] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000 1,000<br>R DS(on)  Limit 25μs R DS(on)  Limit<br>25μs<br>100 100μs 100<br>100μs<br>1ms<br>1ms<br>10ms<br>10 100ms 10 10ms<br>DC 100ms<br>TJ = 175 [o] C TJ = 175 [o] C DC<br>TC = 25 [o] C    TC = 75 [o] C<br>Single Pulse  Single Pulse<br>1 Fig. 17. Maximum Transient Thermal Im 1 pedance<br>1 10 100 1 10 100<br>1.000 VDS - Volts VDS - Volts<br>      Fig. 17. Maximum Transient Thermal Impedance<br>hvjv<br>0.300<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - AmperesID  - AmperesID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_16N10D2(8C) 11-21-11-A 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtt16n10d2/mosfet-single-16a-100v-830w-to/dp/3930030)
---

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