# MOSFET, N-CH, 1.5KV, 12A, TO-268

![Product image](https://novapart.co/image/farnell:3949113/)

**URL**: https://novapart.co/products/IXTT12N150./mosfet-n-ch-15kv-12a-to-268
**SKU**: IXTT12N150.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.3700
**Stock**: 10+
**Lead Time**: 375 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:1.5kV; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 890W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-268 (D3PAK) |
| Drain Source Voltage Vds | 1.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 2.2ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949113/)

## **High Voltage Power MOSFET** 

## **IXTT12N150 IXTH12N150** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|1500|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|1500|V|
|**VGSS**|Continuous|30|V|
|**VGSM**|Transient|40|V|
|**ID25**|TC = 25C|12|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|40|A|
|**IA**|TC = 25°C                                                                         6                     A|= 25°C                                                                         6                     A|= 25°C                                                                         6                     A|
|**EAS**|TC = 25°C                                                                         750                   mJ|= 25°C                                                                         750                   mJ|= 25°C                                                                         750                   mJ|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C|5|V/ns|
|**PD**|TC = 25C|890|W|
|**TJ**||- 55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||- 55 ... +150|C|
|**TL**|1.6mm (0.062 in.) From Case for 10s|300|C|
|**TSOLD**|Plastic Body for 10s|260|C|
|**Md**|Mounting Torque|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-268|4.0|g|
|TO-247|TO-247|6.0|g|



**V =   1500V DSS I =   12A D25 R  2.2  DS(on)** 

## **TO-268 (IXTT)** 

**==> picture [110 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>TO-247 (IXTH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


- G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Packages 

- Molding Epoxies Weet UL 94 V-0 Flammability Classification 

- Fast Intrinsic Diode 

- Low Package Inductance 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>~~|~~|**Min.      Typ.      Max.**<br>~~||~~|**Min.      Typ.      Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>1500<br>~~|~~<br>~~|~~|~~||~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250A<br>2.5                       4.5     V<br>~~|~~<br>~~|~~<br>~~|~~|2.5                       4.5     V<br>~~| |~~<br>~~|~~<br>~~|~~|2.5                       4.5     V|
|**IGSS**<br>VGS =30V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~|~~<br>~~|~~|100<br>nA|
|**IDSS**<br>VDS =  VDSS, VGS= 0V<br>25<br>TJ= 125C                                       500<br>~~|~~|25<br>C                                       500<br>~~|_~~|25<br>A<br>C                                       500A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>2.2|2.2|2.2<br>|



## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- High Voltage Power Supplies 

- Capacitor Discharge 

- Pulse Circuits 

DS100425C(6/15) 

© 2015 IXYS CORPORATION, All Rights Reserved 

**IXTT12N150 IXTH12N150** 

|**Symbol**<br>(TJ= 25C,|**Test Conditions **<br>Unless Otherwise Specified)|**Characteristic**<br> **Min.      Typ.**|**Characteristic**<br> **Min.      Typ.**|**Characteristic**<br> **Min.      Typ.**|**Values**<br>**Max.**|**Values**<br>**Max.**||
|---|---|---|---|---|---|---|---|
|**gfs**|VDS= 20V, ID= 0.5 • ID25, Note 1|8||13|||S|
|**Ciss**||||3720|||pF|
|**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|||240|||pF|
|**Crss**||||80|||pF|
|**td(on)**|**Resistive Switching Times**|||26|||ns|
|**tr**<br>**td(off)**<br>**tf**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)<br> <br> <br>||<br> <br>|16<br>53<br>14|||ns<br>ns<br>ns|
|**Qg(on)**||||106|||nC|
|**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>|||17|||nC|
|**Qgd**||||50|||nC|
|**RthJC**||||||0.14 C/W||
|**RthCS**|TO-247|||0.21||C/W||
|**Source-Drain Diode**||||||||
|**Symbol**|**Test Conditions**|**Characteristic**||||**Values**||
|(TJ= 25C,|Unless Otherwise Specified)|**Min.**||**Typ.**||**Max.**||
|**IS**|VGS= 0V|||||12|A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|||||48|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||||1.4|V|
|**trr**<br>**IRM**<br>**QRM**|<br> <br>IF= 6A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>  <br>|<br> <br>|1.2<br>24.5 <br>14.8|<br> <br>|<br> <br>|μs<br> A<br>μC|



Note       1.  Pulse test, t  300μs, duty cycle, d  2%. 

**==> picture [162 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268 Outline<br>Terminals: 1 - Gate 2,4  - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **TO-247 Outline** 

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||||||||**1**|||**2**||**3**||P|||||||
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|||||||||||||~~e~~|||||||||
||Terminals:|||||||1 -|||Gate||||2 - Drain||||||
|||||||||3 -|||Source||||||||||
||Dim.|||||Millimeter|||||||||Inches||||||
||||||Min.|||||||Max.|||Min.|||Max.|||
|||A||||4.7||||||5.3|||.185|||.209|||
|||A1||||2.2||||||2.54|||.087|||.102|||
|||A2||||2.2||||||2.6|||.059|||.098|||
|||b||||1.0||||||1.4|||.040|||.055|||
|||b1|||1.65|||||||2.13|||.065|||.084|||
|||b~~2~~|||2.87|||||||3.12|||.113|||.123|||
|||C|||||.4|||||.8|||.016|||.031|||
|||D|||20.80|||||||21.46|||.819|||.845|||
|||E|||15.75|||||||16.26|||.610|||.640|||
|||e|||5.20|||||||5.72||0.205 0.225|||||||
|||L|||19.81|||||||20.32|||.780|||.800|||
|||L1||||||||||4.50||||||.177|||
|||P|||3.55|||||||3.65|||.140|||.144|||
|||Q|||5.89|||||||6.40||0.232 0.252|||||||
|||R|||4.32|||||||5.49|||.170|||.216|||
|||S|||6.15|||||BSC|||||242 BSC||||||



- IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTT12N150 IXTH12N150** 

**==> picture [264 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>14<br>V GS = 10V<br>        7V<br>12<br>10 6V<br>8<br>6<br>5.5V<br>4<br>2<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature** 

**==> picture [265 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Output Characteristics @ TJ = 125ºC<br>8<br>VGS = 10V<br>7         6V<br>6<br>5<br>5V<br>4<br>3<br>2<br>1<br>4V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Drain Current** 

**==> picture [534 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.4 2.8<br>VGS = 10V  2.6 VGS = 10V<br>3.0<br>2.4 TJ = 125ºC<br>2.6<br>I D = 12A 2.2<br>2.2<br>2.0<br>I D = 6A<br>1.8 1.8<br>1.4 1.6<br>1.4<br>1.0<br>T J  = 25ºC<br>1.2<br>0.6<br>1.0<br>0.2 0.8<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 5. Maximum Drain Current vs.<br>Case Temperature Fig. 6. Input Admittance<br>14 14<br>12 12<br>10 10<br>8 8 TJ = 125ºC<br>         25ºC<br>       - 40ºC<br>6 6<br>4 4<br>2 2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>TC - Degrees Centigrade VGS - Volts<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION, All Rights Reserved 

**IXTT12N150 IXTH12N150** 

**==> picture [537 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>22 40<br>20 TJ = - 40ºC<br>35<br>18<br>30<br>16<br>25ºC<br>14 25<br>12<br>125ºC  20<br>10<br>8 15 TJ = 125ºC<br>6 10<br>4 TJ  = 25 º C<br>5<br>2<br>0 0<br>0 2 4 6 8 10 12 14 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>ID - Amperes VSD - Volts<br> - Siemens  - Amperes<br>gf s IS<br>**----- End of picture text -----**<br>


**==> picture [538 x 430] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Gate Charge Fig. 10. Capacitance<br>10 10,000<br>9  V DS = 700V<br>8  I D = 6A C iss<br> I G = 10mA<br>7<br>1,000<br>6<br>5 Coss<br>4<br>100<br>3<br>C rss<br>2<br>1 f = 1 MHz<br>0 10<br>0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br>Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance<br>100 1<br>RDS(on) Limit 25µs<br>10 0.1<br>100µs<br>1ms<br>1 0.01<br>TJ = 150ºC<br>TC = 25ºC    10ms<br>Single Pulse<br>DC<br>0.1 0.001<br>10 100 1,000 10,000 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br> - ºC / W<br> - AmperesID Z(th)JC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_12N150 (8M) 5-23-11 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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