# Power MOSFET, N Channel, 150 V, 120 A, 0.016 ohm, TO-268, Surface Mount

![Product image](https://novapart.co/image/farnell:4757931/)

**URL**: https://novapart.co/products/IXTT120N15P/power-mosfet-n-channel-150-v-120-a-0016-ohm-to-268
**SKU**: IXTT120N15P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.4900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | PolarHT Series |
| Qualification | - |
| Power Dissipation | 600W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-268 |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 0.016ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757931/)

## **PolarHT[TM] Power MOSFET** 

## **IXTQ 120N15P IXTT 120N15P** 

**V =    150     V DSS I =    120     A D25 R ≤ 16 m Ω DS(on)** 

## N-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-3P (IXTQ)**|**TO-3P (IXTQ)**|||||
|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**<br>**VDGR**<br>**VDSS**<br>**VGSM**<br>**ID25**<br>**ID(RMS)**|TJ = 25°C to 175°C<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>Continuous<br>Transient<br>TC = 25°C<br>External lead current limit|150<br>150<br>±20<br>±30<br>120<br>75||V<br>V<br>V<br>V<br>A<br>A||G<br>D S<br>(TAB)<br>p>|||||
|**IDM**|TC = 25°C, pulse width limited by TJM|260||A|||||||
|**IAR**|TC = 25°C|60||A|||||||
|**EAR**|TC = 25°C|60||mJ|**TO-268 (IXTT)**||||||
|**EAS**<br>**dv/dt**|TC = 25°C<br>IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>TJ ≤150°C, RG= 4Ω|2.0<br>10||J<br>V/ns||G<br>S<br>S<br>||||D (TAB)||
|**PD**|TC = 25°C|600||W|||||||
|**TJ**<br>**TJM**||-55 ... +175<br>175||°C<br>°C|G = Gate<br>S = Source|G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain|||||
|**Tstg**||-55 ... +150||°C|||||||
|**TL**|1.6 mm (0.062 in.) from case for 10 s|300||°C|||||||
|**TSOLD**|Plastic body for 10 s|260||°C|||||||
|**Md**|Mounting torque<br>(TO-3P)|1.13/10|Nm/lb.in.||**Features**||||||
|**Weight**|TO-3P<br>TO-268|5.5<br>5.0||g<br>g|l <br>l|International standard packages<br> Unclamped Inductive Switching (UIS)|||||
|||||||rated|||||
||||||l|Low package inductance|||||
|**Symbol**|**Test Conditions**|**Characteristic Values**||||- easy to drive and to protect|||||
|(TJ= 25°C, unless otherwise specified)||**Min.    Typ.**|**Max.**||||||||
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = 0 V, ID= 250µA<br>VDS = VGS, ID= 250µA<br>VGS =±20 VDC, VDS= 0<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 175°C<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, dutycycle d≤2 %|150<br>3.0<br>5.0<br>±100<br>25<br>500<br>16<br>~~|~~<br>~~_~~<br>~~___~~||V<br>V<br>nA<br>µA<br>µA<br>mΩ|**Advantages**<br>l<br>Easy to mount<br>l<br>Space savings<br>l<br>High power density||||||



> l International standard packages 

> l Unclamped Inductive Switching (UIS) rated 

DS99280E(10/05) 

© 2005 IXYS All rights reserved 

**IXTQ 120N15P IXTT 120N15P** 

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**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Symbol|Test Conditions                                                Characteristic Values|
|(TJ = 25|°|C, unless otherwise specified)|
|Min.|Typ.|Max.|
|gfs|VDS= 10 V; ID = 0.5 ID25, pulse test|40|60|S|
|Ciss|4900|pF|
|Coss|VGS = 0 V, VDS = 25 V, f = 1 MHz|1300|pF|
|Crss|330|pF|
|t|33|ns|
|d(on)|
|tr|VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A|42|ns|
|td(off)|RG = 4|Ω|(External)|85|ns|
|tf|26|ns|
|Q|150|nC|
|g(on)|
|Qgs|VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25|40|nC|
|Q|80|nC|
|gd|
|RthJC|0.25|°|C/W|
|RthCS|(TO-3P)|0.21|°|C/W|

**----- End of picture text -----**<br>


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||||||||
|---|---|---|---|---|---|---|
|Source-Drain Diode                                                                Characteristic Values|
|(TJ = 25|°|C, unless otherwise specified)|
|Symbol|Test Conditions|Min.|Typ.|Max.|
|IS|VGS = 0 V|120|A|
|ISM|Repetitive|260|A|
|VSD|IF = IS, VGS = 0 V,|1.5|V|
|Pulse test, t|≤|300|µ|s, duty cycle d|≤|2 %|
|trr|IF = 25 A,  -di/dt = 100 A/|µ|s|150|ns|
|QRM|VR = 100 V,  VGS = 0 V|2.3|µ|C|

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## **TO-3P (IXTQ) Outline** 

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 TO-268 Outline<br>**----- End of picture text -----**<br>


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||||||||||
|---|---|---|---|---|---|---|---|---|
|IXYS reserves the right to change limits, test conditions,  and  dimensions.|
|IXYS MOSFETs  and IGBTs are covered  by|4,835,592|4,931,844|5,049,961|5,237,481|6,162,665|6,404,065 B1|6,683,344|6,727,585|
|one or moreof the following U.S. patents:|4,850,072|5,017,508|5,063,307|5,381,025|6,259,123 B1|6,534,343|6,710,405B2|6,759,692|
|4,881,106|5,034,796|5,187,117|5,486,715|6,306,728  B1|6,583,505|6,710,463         6,771,478 B2|

**----- End of picture text -----**<br>


**IXTQ 120N15P IXTT 120N15P** 

**Fig. 1. Output Characteristics @ 25ºC** 

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120<br>VGS = 10V<br>          9V<br>100<br>80 8V<br>60 7V<br>40<br>6V<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 150ºC** 

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120<br>VGS = 10V<br>          9V<br>100<br>8V<br>80<br>7V<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 1 2 3 4 5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. Drain Current** 

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4<br>3.5 T J  = 175ºC<br>3<br>2.5<br>2 VGS = 10V<br>VGS = 15V<br>1.5<br>1<br>T J  = 25ºC<br>0.5<br>0 30 60 90 120 150 180 210 240 270 300<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

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280<br>VGS = 10V<br>240<br>200 9V<br>160<br>8V<br>120<br>80<br>7V<br>40<br>6V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** 

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2.8<br>2.6 V GS  = 10V<br>2.4<br>2.2<br>2<br>I D = 120A<br>1.8<br>1.6 I D  = 60A<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2005 IXYS All rights reserved 

**IXTQ 120N15P IXTT 120N15P** 

**Fig. 7. Input Admittance** 

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210<br>180<br>150<br>120<br>90<br>60  TJ = 150ºC<br>         25ºC<br>30 -40ºC<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

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300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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10,000<br>Ciss<br>1,000<br>Coss<br>f = 1MHz C rss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

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90<br>80<br>70<br>60<br>50<br>40 T J  = -40ºC<br>       25ºC<br>30<br>     150ºC<br>20<br>10<br>0<br>0 30 60 90 120 150 180 210 240 270<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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10<br>9 VDS = 75V<br>8 I D = 60A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

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1000<br>T J  = 175ºC<br>R  Limit T C  = 25ºC<br>DS(on)<br>25µs<br>100<br>100µs<br>1ms<br>10ms<br>DC<br>10<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXTQ 120N15P IXTT 120N15P** 

**Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e** 

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1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>0 . 1 1 1 0 1 0 0 1 0 0 0<br>Pu ls e  W id th  -  millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


© 2005 IXYS All rights reserved 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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