# MOSFET, N-CH, 100V, 110A, TO-268

![Product image](https://novapart.co/image/farnell:3771274/)

**URL**: https://novapart.co/products/IXTT110N10L2./mosfet-n-ch-100v-110a-to-268
**SKU**: IXTT110N10L2.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €10.3600
**Stock**: 10+
**Lead Time**: 291 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | LinearL2 Series |
| Qualification | - |
| Power Dissipation | 600W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-268 (D3PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771274/)

## Advance Technical  Information 

## **LinearL2[TM] Power MOSFET w/ Extended FBSOA** 

## **IXTH110N10L2 IXTT110N10L2** 

**V =   100V DSS I =   110A D25 R ≤ 18m Ω DS(on)** 

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated 

## **TO-247 (IXTH)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|100                    V|100                    V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|100                          V|100                          V|
|**VGSS**|Continuous|±20                       V|20                       V|
|**VGSM**|Transient|±30                            V|30                            V|
|**ID25**|TC = 25°C<br>110|110|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM300|300|A|
|**IA**|TC = 25°C<br>110|110|A|
|**EAS**|TC = 25°C|3|J|
|**PD**|TC = 25°C                                                                    600|C                                                                    600|W|
|**TJ**|-55 to +150|-55 to +150|-55 to +150°C|
|**TJM**|+150|+150|+150°C|
|**Tstg**-55 to +150|-55 to +150|-55 to +150|°C|
|**TL**|1.6mm (0.063in) from Case for 10s                             300|1.6mm (0.063in) from Case for 10s                             300|°C|
|**TSOLD**|Plastic Body for 10s                                                      260|Plastic Body for 10s                                                      260|Plastic Body for 10s                                                      260°C|
|**Md**|Mounting Torque  (TO-247)                                  1.13/10             Nm/lb.in.|Mounting Torque  (TO-247)                                  1.13/10             Nm/lb.in.||
|**Weight**|TO-247                                                                         6.0                         g|TO-247                                                                         6.0                         g|TO-247                                                                         6.0                         g|
||TO-268                                                                            4.0                          g|TO-268                                                                            4.0                          g|TO-268                                                                            4.0                          g|



**==> picture [80 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


## **TO-268 (IXTT)** 

**==> picture [51 x 39] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

Designed for Linear Operation International Standard Packages Avalanche Rated Integrated Gate Resistor for Easy Paralleling Guaranteed FBSOA at 75°C 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**<br>~~|~~|**Min.      Typ.       Max.**<br>~~|~~|**Min.      Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>100<br>~~|~~|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5<br>~~|~~<br>~~|~~|4.5<br>~~|~~<br>~~—~~<br>~~|~~|4.5<br>V<br>|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|~~|±<br>~~|~~|±100<br>nA<br>|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>50<br>~~|~~|5<br>50<br>~~|=~~|5μA<br>50μA<br>~~=~~|
|**RDS(on)**<br>VGS= 10V, ID= 0.5 • ID25, Note 1<br>18   m<br>|18   m<br>~~=~~|18   mΩ<br>~~=~~|



## **Advantages** 

Easy to Mount Space Savings High Power Density 

## **Applications** 

Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 

© 2010 IXYS CORPORATION, All Rights Reserved 

DS100235(01/10) 

## **IXTH110N10L2 IXTT110N10L2** 

|**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**TO-247**|**TO-247**|**TO-247**|**TO-247**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfs**|VDS = 10V, ID= 0.5 • ID25, Note 1|45|55||65|S||||||||||||||||||
|**Ciss**|||10.5|||nF||||||||||||||||||
|**Coss**<br>**Crss**|VGS = 0V, VDS= 25V, f = 1MHz|<br>|1585<br>420|||pF<br>pF||||||||**1**|||**2       3**|∅P||||||
|**RGi**|Gate Input Resistance||1.8|||Ω||||||||||||||||||
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2.2Ω(External)|<br> <br> <br>|28<br>130<br>99<br>24|||ns<br>ns<br>ns<br>ns|Terminals:||||||||~~e~~<br> 1 - Gate<br>3 - Source|||2 - Drain<br>Tab - Drain||||||
|**Qg(on)**|||260|||nC||Dim.|||||Millimeter|||||Inches||||||
|**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||52|||nC||||||Min.|||||Max.|Min.||Max.||||
|**Qgd**|||106|||nC|||A<br>A1||||4.7<br>2.2||||5.3<br>2.54|.185<br>.087||.209<br>.102||||
|**RthJC**<br>**RthCS**|TO-247||<br>0.21||0.21|°C/W<br>°C/W|||A2<br>b<br>b1|||2.2<br>1.0<br>1.65|||||2.6<br>1.4<br>2.13|.059<br>.040<br>.065||.098<br>.055<br>.084||||
||||||||||b~~2~~|||2.87|||||3.12|.113||.123||||
||||||||||C||||||.4||.8|.016||.031||||
|**Safe Operating Area Specification**|||||||||D|||20.80|||||21.46|.819||.845||||
||||||||||E|||15.75|||||16.26|.610||.640||||
|||**Characteristic Values**|||||||e|||5.20|||||5.72|0.205 0.225||||||
|**Symbol**|**Test Conditions**|**Min.**|**Typ.**||**Max.**||||L<br>L1|||19.81|||||20.32<br>4.50|.780||.800<br>.177||||
|**SOA**|VDS= 80V, ID= 3.6A, TC= 75°C, tp= 5s<br>|360||||W|||∅P|||3.55|||||3.65|.140||.144||||
||||||||||Q|||5.89|||||6.40|0.232 0.252||||||
||||||||||R|||4.32|||||5.49|.170||.216||||
||||||||||S|||6.15|||||BSC|242 BSC||||||
|||||||||||||||||||||||||



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TO-268 (IXTT) Outline<br>Terminals: 1 - Gate 2 - Drain<br>3 - Source Tab - Drain<br>**----- End of picture text -----**<br>


## **Source-Drain Diode** 

|**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||
|---|---|---|---|---|---|
|(TJ= 25°C,|Unless Otherwise Specified)|**Min.**|**Typ.**|**Max.**||
|**IS**|VGS= 0V|||110|A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|||440|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||1.4|V|
|**trr**<br>**IRM**<br>**QRM**|<br> <br> <br>IF= 55A, -di/dt = 100A/μs,<br>VR= 50V, VGS= 0V|<br> <br>|230<br>19.4<br>2.2||ns<br>A<br>μC|



Note  1.  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTH110N10L2 IXTT110N10L2** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

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110<br>VGS = 20V<br>100         14V<br>        12V<br>90<br>        10V<br>80<br>70<br>60<br>8V<br>50<br>40<br>30<br>20 6V<br>10<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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300<br>VGS = 20V<br>         14V<br>250          12V<br>10V<br>200<br>150<br>8V<br>100<br>50<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
110 2.8<br>VGS = 20V<br>100         14V V GS = 10V<br>90         12V 2.4<br>        10V<br>80<br>2.0 I  D  = 110A<br>70<br>60 8V<br>50 1.6 I  D  = 55A<br>40<br>1.2<br>30 6V<br>20 0.8<br>10<br>5V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.8 120<br>VGS = 10V<br>3.4           20V   - - - - T J  = 125ºC 100<br>3.0<br>80<br>2.6<br>2.2 60<br>1.8 T J  = 25ºC 40<br>1.4<br>20<br>1.0<br>0.6 0<br>0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

**IXTH110N10L2 IXTT110N10L2** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>TJ = 125ºC<br>60           25ºC<br>        - 40ºC<br>40<br>20<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>320<br>280<br>240<br>200<br>160<br>120<br>TJ = 125ºC<br>80<br>TJ  = 25ºC<br>40<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [258 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>C oss<br>1,000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
100<br>90 TJ = - 40ºC<br>80<br>70 25ºC<br>60 125ºC<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [250 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br> VDS = 50V<br>14<br> I D = 55A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [254 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTH110N10L2 IXTT110N10L2** 

**Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC** 

**==> picture [256 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000<br>R DS(on)  Limit<br>25µs<br>100 100µs<br>1ms<br>10ms<br>10<br>100ms<br>DC<br>TJ = 150ºC<br>TC = 25ºC<br>Single Pulse<br>1<br>1 10 100<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1,000<br>R DS(on)  Limit<br>25µs<br>100<br>100µs<br>1ms<br>10 10ms<br>100ms<br>TJ = 150ºC DC<br>TC = 75ºC<br>Single Pulse<br>1<br>1 10 100<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_110N10L2(8R)01-22-10 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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---

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