# Power MOSFET, X2-Class, N Channel, 650 V, 54 A, 0.033 ohm, ISOPLUS-247, Through Hole

![Product image](https://novapart.co/image/farnell:2674793/)

**URL**: https://novapart.co/products/IXTR102N65X2/power-mosfet-x2-class-n-channel-650-v-54-a-0033
**SKU**: IXTR102N65X2
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €13.3600
**Stock**: 10+
**Lead Time**: 211 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | ISOPLUS-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 54A |
| Drain Source On State Resistance | 0.033ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674793/)

## **X2-Class Power MOSFET** 

## **IXTR102N65X2** 

**==> picture [49 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G<br>S<br>**----- End of picture text -----**<br>


**(Electrically Isolated Tab)** N-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|---|
|**VDSS**|TJ|= 25C to 150C|650|V|
|**VDGR**|TJ|= 25C to 150C, RGS= 1M|650|V|
|**VGSS**|Continuous||30|V|
|**VGSM**|Transient||40|V|
|**ID25**|TC|= 25C|54|A|
|**IDM**|TC|= 25C, Pulse Width Limited by TJM|204|A|
|**IA**|TC|= 25C|25|A|
|**EAS**|TC|= 25C|3|J|
|**PD**|TC|= 25C|330|W|
|**dv/dt**|IS|IDM, VDD VDSS, TJ 150°C                                      50                V/ns|150°C                                      50                V/ns|150°C                                      50                V/ns|
|**TJ**|||-55 ... +150|C|
|**TJM**|||150|C|
|**Tstg**|||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300||Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**VISOL**|50/60 Hz, 1 Minute                                                        2500||50/60 Hz, 1 Minute                                                        2500 V||
|**FC**|Mounting Force<br>20..120/4.5..27               N/lb||20..120/4.5..27               N/lb|20..120/4.5..27               N/lb|
|**Weight**||5                    g|5                    g|5                    g|



**V =    650V DSS I =    54A D25 R**  **33m**  **DS(on)** 

**==> picture [128 x 104] intentionally omitted <==**

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ISOPLUS247<br>           E153432<br>G<br>D Isolated Tab<br>S<br>**----- End of picture text -----**<br>


- G =  Gate D     = Drain S =  Source 

## **Features** 

- Silicon Chip on Direct-Copper Bond (DCB) Substrate 

- Isolated Mounting Surface 

- 2500V~ Electrical Isolation 

- Low QG 

- Avalanche Rated 

- Low Package Inductance 

## **Advantages** 

- High Power Density 

|(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA                                       650|~~=~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250µA                                   3.0|5.0<br>~~=~~|5.0<br>V|
|**IGSS**<br>VGS =30V, VDS= 0V|<br>~~|~~|100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>500|25<br>500|25<br>A<br>500A|
|**RDS(on)**<br>VGS = 10V, ID= 51A, Note 1|33   m|33   m|



- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

© 2020 IXYS CORPORATION, All Rights Reserved 

DS100681B(1/20) 

## **IXTR102N65X2** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 51A, Note 1                             50|82|S|
|**RGi**<br>Gate Input Resistance<br>|0.7||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|10.9<br>6100<br>12.6|nF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|367<br>1420|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 51A<br>RG= 2(External)|37<br>28<br>67<br>11|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 51A<br> <br>**Qgd**<br>|152<br>57<br>33|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.38C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**IS**<br>VGS = 0V|||102<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|||408     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|||1.4<br>V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br> <br>IF= 51A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V|450<br>11.7<br>52|ns<br>µC<br>A|
|||||



Note 1. Pulse test, t  300s, duty cycle, d 2%. 

> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTR102N65X2** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>110<br>V GS = 10V<br>100<br>          8V<br>90<br>7V<br>80<br>70<br>60<br>50 6V<br>40<br>30<br>20<br>10 5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>110<br>V GS = 10V<br>100          7V<br>90<br>80<br>6V<br>70<br>60<br>50<br>40<br>30 5V<br>20<br>10<br>4V<br>0<br>0 1 2 3 4 5 6 7 8 9<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 51A Value vs.<br> Drain Current<br>4.5<br>4.0 V GS = 10V<br>3.5<br>T J  = 125oC<br>3.0<br>2.5<br>2.0<br>T J = 25 [o] C<br>1.5<br>1.0<br>0.5<br>0 40 80 120 160 200 240<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>240<br>VGS = 10V<br>200 8V<br>160 7V<br>120<br>80<br>6V<br>40<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature** 

**==> picture [264 x 401] intentionally omitted <==**

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3.5<br>VGS = 10V<br>3.0<br>2.5<br>I  D = 102A<br>2.0<br>I D = 51A<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Normalized Breakdown & Threshold Voltages<br>vs. Junction Temperature<br>1.2<br>1.1 BV DSS<br>1.0<br>0.9<br>0.8 V GS(th)<br>0.7<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Normalized<br>GS(th)<br> / V<br>DSS<br>BV<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXTR102N65X2** 

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**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>60 160<br>140<br>50<br>120<br>40<br>100<br>30 80 TJ = 125 [o] C<br>          25 [o] C<br>60        - 40 [o] C<br>20<br>40<br>10<br>20<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 9. Transconductance** 

**Fig. 10. Forward Voltage Drop of Intrinsic Diode** 

**==> picture [529 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
160 300<br>140 TJ = - 40 [o] C<br>250<br>120<br>25 [o] C 200<br>100<br>80 125 [o] C 150<br>60<br>100<br>TJ = 125 [o] C<br>40<br>50 TJ = 25 [o] C<br>20<br>0 0<br>0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V Ciss<br>8  I D = 51A 10,000<br> I G = 10mA<br>6 1,000 Coss<br>4 100<br>2 10<br>f = 1 MHz  Crss<br>0 1<br>0 20 40 60 80 100 120 140 160 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemensgf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTR102N65X2** 

## **Fig. 13. Output Capacitance Stored Energy** 

**Fig. 14. Forward-Bias Safe Operating Area** 

**==> picture [533 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
70 1000<br>RDS(on) Limit<br>60<br>100<br>50<br>25µs<br>40<br>10<br>30 100µs<br>20<br>1 o 1ms<br> TJ = 150 C<br>10  TC = 25oC<br>Single Pulse  10ms<br>0 0.1<br>0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_102N65X2(X8-R4T50) 8-05-15-B 

**IXTR102N65X2** 

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**----- Start of picture text -----**<br>
  ISOPLUS247 (IXTR) Outline<br>eb<br>Olk<br>y<br>.<br>|<br>:<br>ee Le<br>— 1 = Gate<br>2,4 = Drain<br>3 = Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTR102N65X2** sid 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION, All Rights Reserved 



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---

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