# Power MOSFET, N Channel, 200 V, 50 A, 0.06 ohm, TO-3P, Through Hole

![Product image](https://novapart.co/image/farnell:3438433/)

**URL**: https://novapart.co/products/IXTQ50N20P/power-mosfet-n-channel-200-v-50-a-006-ohm-to-3p
**SKU**: IXTQ50N20P
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.4100
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (12-Jan-2017) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | PolarHT |
| Qualification | - |
| Power Dissipation | 360W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-3P |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3438433/)

## **PolarHT[TM] IXTA50N20P Power MOSFET IXTP50N20P IXTQ50N20P** 

**V =     200V DSS I =     50A D25 R ≤ 60m Ω DS(on)** 

## N-Channel Enhancement Mode 

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**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Avalanche Rated|
|TO-263 (IXTA)|
|Symbol|Test Conditions|Maximum Ratings|
|VDSS|TJ|= 25°C to 175°C|200|V|G|
|V|ee|DGR|TJ|= 25°C to 175°C, RGS = 1MΩ|200|V|>.|S|
|(TAB)|
|VGSS|Continuous|±20|V|
|VGSM|Transient|±30|V|TO-220 (IXTP)|
|ID25|TC|= 25°C|50|A|
|IDM|TC|= 25°C, pulse width limited by TJM|120|A|
|IA|TC|= 25°C|50|A|
|E|cas|AS|TC|= 25°C|1|J|G|D|S|(TAB)|
|dV/dt|IS|≤ IDM, VDD|≤ VDSS, TJ|≤ 175°C|10|V/ns|
|PD|TC|= 25°C|360|W|TO-3P (IXTQ)|
|TJ|- 55 ... +175|°C|
|TJM|175|°C|
|Tstg|- 55 ... +175|°C|
|TL|1.6mm (0.062 in.) from case for 10s|300|°C|
|TSOLD|Plastic body for 10s|260|°C|
|le|G|
|Md|Mounting torque|(TO-3P,TO-220)|1.13/10         Nm/lb.in.|D|S|(TAB)|
|Weight|TO-263|2.5|g|
|TO-220|3.0|g|
|TO-3P|5.5                    g|
|G  =  Gate|D     =  Drain|
|S  =  Source|TAB =  Drain|

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## **Features** 

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||||||||
|---|---|---|---|---|---|---|
|Symbol|Test Conditions                                                  Characteristic Values|
|(TJ = 25°C, unless otherwise specified)|Min.    Typ.     Max.|
|BVDSS|VGS|= 0V, ID =  250μA|200|7|V|
|VGS(th)|VDS|= VGS, ID =  250μA|2.5                   5.0      V|
|IGSS|VGS|= ±20V, VDS = 0V|±|—|100|nA|
|IDSS|VDS|=  VDSS|25|μA|
|VGS|=  0V                                      TJ = 150°C|250|-|μA|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25,  Note 1|60|mΩ|

**----- End of picture text -----**<br>


- International standard packages 

- Unclamped Inductive Switching (UIS) rated 

- Low package inductance 

- easy to drive and to protect 

## **Advantages** 

- Easy to mount 

- Space savings 

- High power density 

DS99156F(07/08) 

© 2008 IXYS CORPORATION,  All rights reserved 

## **IXTA50N20P  IXTP50N20P IXTQ50N20P** 

|**Symbol**<br>(TJ= 25°C, unless otherwise specified)|**Test Conditions                                                  Characteristic Values**<br>C, unless otherwise specified)<br>**Min.      Typ.      Max.**|**Test Conditions                                                  Characteristic Values**<br>**Min.      Typ.      Max.**|**Test Conditions                                                  Characteristic Values**<br>**Min.      Typ.      Max.**|**Test Conditions                                                  Characteristic Values**<br>**Min.      Typ.      Max.**|**Test Conditions                                                  Characteristic Values**<br>**Min.      Typ.      Max.**|
|---|---|---|---|---|---|
|**gfs**|VDS= 10V, ID= 0.5 • ID25,  Note 1                    12            23|,  Note 1                    12            23|,  Note 1                    12            23||S|
|||||||
|**Ciss**|2720|2720|2720||pF|
|**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|490|490||pF|
|||||||
|**Crss**||105|105||pF|
|**td(on)**|**Resistive Switching Times**||26||ns|
|**tr**<br>**td(off)**<br>**tf**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|35<br>70<br>30|35<br>70<br>30||ns<br>ns<br>ns|
|**Qg(on)**||70|70||nC|
|**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|17|17||nC|
|**Qgd**||37|37||nC|
|**RthJC**||0.42|0.42|0.42°|°C/W|
|**RthCS**|(TO-3P)|0.21|0.21||°C/W|
||(TO-220)|0.25|0.25|°|°C/W|



## **TO-3P (IXTQ) Outline** 

## **Source-Drain Diode** 

|**Symbol**||**Test Conditions                                                  Characteristic Values**|**Test Conditions                                                  Characteristic Values**|**Test Conditions                                                  Characteristic Values**|**Test Conditions                                                  Characteristic Values**|**Test Conditions                                                  Characteristic Values**|
|---|---|---|---|---|---|---|
|(TJ= 25°C, unless otherwise specified)|||**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**||
|**IS**||VGS= 0V||50     A|50     A|50     A|
|**ISM**||Repetitive, pulse width limited by TJM||120     A|120     A|120     A|
|**VSD**||IF= 50A, VGS= 0V,  Note 1||1.5     V|1.5     V|1.5     V|
|**trr**<br>**QRM**|}|IF= 25A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V|150<br>2.0|150<br>2.0||ns<br>μC|



## **TO-220 (IXTP) Outline** 

Note 1:  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

## **TO-263 (IXTA) Outline** 

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**----- Start of picture text -----**<br>
——<br>Pins: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IXYS reserves the right to change limits, test conditions, and dimensions. | Q_ | t 00 | e s | 254 | 3 1 8<br>IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2<br>by one or more  of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br>


**IXTA50N20P  IXTP50N20P IXTQ50N20P** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics<br>@ 25ºC<br>50<br>45 V GS = 10V<br>40<br>9V<br>35<br>30<br>8V<br>25<br>20<br>7V<br>15<br>10<br>5 6V<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 150ºC** 

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**----- Start of picture text -----**<br>
50<br>45 V GS = 10V<br>         9V<br>40<br>35<br>8V<br>30<br>25<br>20<br>7V<br>15<br>6V<br>10<br>5 5V<br>0<br>0 1 2 3 4 5 6 7 8<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current** 

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**----- Start of picture text -----**<br>
4.2<br>3.8 V GS = 10V<br>3.4<br>TJ = 175ºC<br>3<br>2.6<br>2.2<br>TJ = 125ºC<br>1.8<br>1.4<br>1 TJ = 25ºC<br>0.6<br>0 10 20 30 40 50 60 70 80 90 100<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>100<br>90 V GS = 10V<br>80<br>9V<br>70<br>60<br>50<br>8V<br>40<br>30<br>20 7V<br>10<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.2<br>3.0<br>2.8 V GS = 10V<br>2.6<br>2.4<br>2.2<br>2.0 ID = 50A<br>1.8<br>ID = 25A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Drain Current vs. Case Temperature** 

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55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

**IXTA50N20P  IXTP50N20P IXTQ50N20P** 

**Fig. 7. Input Admittance** 

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**----- Start of picture text -----**<br>
90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 150ºC<br>          25ºC<br>20         - 40ºC<br>10<br>0<br>4 5 6 7 8 9 10<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

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**----- Start of picture text -----**<br>
150<br>125<br>100<br>75<br>50<br>TJ = 150ºC<br>25 T J = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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**----- Start of picture text -----**<br>
10000<br>Ciss<br>1000<br>C oss<br>100<br>Crss<br>f = 1MHz<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
36<br>32 TJ = - 40ºC<br>28<br>24<br>25ºC<br>20<br>150ºC<br>16<br>12<br>8<br>4<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>9 VDS = 100V<br>8 ID = 25A<br>7 I G  = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
1000<br>TJ = 175ºC<br>R DS(ON) Limit  T C  = 25ºC<br>Single Pulse<br>100<br>25µs<br>100µs<br>10 1ms<br>DC 10ms<br>1<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions, and dimensions. 

**IXTA50N20P  IXTP50N20P IXTQ50N20P** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>0.1 1 10 100 1000<br>Pulse Width - milliseconds<br>C / W<br>º<br> -<br>( t h ) J C<br>Z<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

IXYS REF: T_50N20P(5S)7-31-08-F 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixtq50n20p/mosfet-n-ch-200v-50a-to-3p/dp/3438433)
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