# Power MOSFET, X2-Class, N Channel, 650 V, 4 A, 0.55 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2674792/)

**URL**: https://novapart.co/products/IXTP8N65X2M/power-mosfet-x2-class-n-channel-650-v-4-a-055-ohm
**SKU**: IXTP8N65X2M
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2000
**Stock**: 10+
**Lead Time**: 295 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 32W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.55ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674792/)

## **X2-Class Power MOSFET** 

## **IXTP8N65X2M** 

**V =   650V DSS I =   8A D25 R  550m  DS(on)** 

## **(Electrically Isolated Tab)** 

N-Channel Enhancement Mode 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|~~ee~~||||
|**VDSS**|TJ = 25C to 150C|650|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V|
|**VGSS**|Continuous|30|V|
|**VGSM**|Transient|40|V|
|**ID25**|TC = 25C, Limited by TJM|8|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|16|A|
|**IA**|TC = 25C|4|A|
|**EAS**|TC = 25C|250|mJ|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      15                   V/ns|150°C                                      15                   V/ns|150°C                                      15                   V/ns|
|**PD**|TC = 25C|32|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**VISOL**|50/60 Hz, 1 Minute                                                        2500|50/60 Hz, 1 Minute                                                        2500<br>|V~|
|**Md**|Mounting Torque<br>1.13 / 10         Nm/lb.in|1.13 / 10         Nm/lb.in||
|**Weight**|2.5|2.5|g|



**OVERMOLDED TO-220** Isolated Tab G D S 

G = Gate D = Drain S = Source 

## **Features** 

- International Standard Package 

- Plastic Overmolded Tab 

- Low RDS(ON) and QG 

- Avalanche Rated 

- 2500V~ Electrical Isolation 

- Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Symbol Test Conditions                                                Characteristic Values** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>650|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>3.0 5.0      V|5.0      V<br>~~—_~~|5.0      V|
|**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~—_~~<br>~~=~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>150|10<br>150<br>~~==~~|10A<br>150A|
|**RDS(on)**<br>VGS = 10V, ID= 4A, Note 1|550  m<br>~~_~~|550  m|



## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100668C(10/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXTP8N65X2M** 

|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|**IXTP8N65X2M**|
|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||
||||||||||||
|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|||||||1<br>2<br>3<br>**OVERMOLDED TO-220**<br>**(IXTP...M)**<br>oP||||
||||||||||2<br>3<br>oP||
|**gfs**<br>VDS= 10V, ID= 4A, Note 1                             4.8||8.0||S|||||||
|**RGi**<br>Gate Input Resistance<br>||6|||||||||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>||800<br>495<br>2.2||pF<br>pF<br>pF|||||||
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|||||||||||
||<br> <br>**p**<br>GS= 0V<br>DS= 0.8 • VDSS|43<br>129||pF<br>pF|||||Terminals:<br>1 -<br>2 -<br>3 -|Gate<br>Drain<br>Source|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**Resistive Switchin**<br>VGS= 10V, VDS= 0.5<br>RG= 30(External)|<br> <br> <br> <br>**g Times**<br>• VDSS, ID= 4A<br>|24<br>28<br>53<br>24||ns<br>ns<br>ns<br>ns|||||||
|**Qg(on)**<br>**Qgs**<br>VGS= 10V, VDS= 0.5<br>**Qgd**<br>**RthJC**<br>**RthCS**<br>|||||||||||
||||||||||||
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>(TJ= 25C, Unless Otherwise Spec<br>**IS**<br>VGS= 0V|**Characteristic Values**<br>ified)**Min.       Typ.       Max**<br>8       A||||||||||
|**ISM**<br>Repetitive, pulse Wi|dth Limited by TJM||||32       A||||||
|**VSD**<br>IF= IS, VGS= 0V, Not|e 1||||1.4       V||||||
|**trr**<br>**QRM**<br>**IRM**<br>IF= 4A, -di/dt = 100A<br>VR= 100V|<br> <br> <br>/μs||200<br>1.65<br>16.3||ns<br>μC<br>A||||||
||||||||||||



|**Source-Drain Diode**|**Source-Drain Diode**|||||
|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Characteristic**||**Values**||
|(TJ= 25C, Unless Otherwise Specified)||**Min.**|**Typ.**|**Max**||
|**IS**|VGS= 0V|||8|A|
|**ISM**|Repetitive, pulse Width Limited by TJM|||32|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||1.4|V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br>IF= 4A, -di/dt = 100A/μs<br>VR= 100V|<br> <br>|200<br>1.65<br>16.3|ns<br>μC<br>A||



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXTP8N65X2M** 

**==> picture [264 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>8<br>VGS = 10V<br>7            8V  7V<br>6<br>6V<br>5<br>4<br>3<br>2<br>1 5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [265 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>8<br>VGS = 10V<br>7           7V<br>6 6V<br>5<br>4<br>3<br>5V<br>2<br>1<br>4V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 4A Value vs.<br> Drain Current<br>4.5<br>4.0 V GS = 10V<br>TJ = 125 [o] C<br>3.5<br>3.0<br>2.5<br>T J  = 25 [o] C<br>2.0<br>1.5<br>1.0<br>0.5<br>0 2 4 6 8 10 12 14 16 18<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**==> picture [263 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>18<br>V GS = 10V<br>16            8V<br>14<br>7V<br>12<br>10<br>8<br>6<br>6V<br>4<br>2<br>5V<br>0<br>0 4 8 12 16 20 24 28 32<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature** 

**==> picture [254 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.0<br>3.5 VGS = 10V<br>3.0<br>2.5 I D = 8A<br>2.0<br>I  D  = 4A<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Input Admittance** 

**==> picture [252 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9<br>8<br>7<br>6<br>5<br>T J = 125 [o] C<br>4<br>         25 [o] C<br>3 - 40 [o] C<br>2<br>1<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXTP8N65X2M** 

**==> picture [535 x 419] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>14 25<br>TJ = - 40 [o] C<br>12<br>20<br>10<br>25 [o] C<br>8 15<br>125 [o] C<br>6<br>10<br>TJ = 125 [o] C<br>4<br>TJ  = 25 [o] C<br>5<br>2<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 11 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>ID - Amperes VSD - Volts<br>Fig. 10. Capacitance<br>Fig. 9. Gate Charge<br>10 10000<br> VDS = 325V<br>8  I D = 4A 1000 C iss<br> I G = 10mA<br>6 100 Coss<br>4 10<br>C rss<br>2 1<br>f = 1 MHz<br>0 0.1<br>0 2 4 6 8 10 12 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>f s  - Amperes<br>g IS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


## **Fig. 11. Output Capacitance Stored Energy** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [527 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
9 100<br>8<br>100μs 25μs<br>1ms<br>7 10 RDS(on) Limit 1s 100ms 10ms<br>DC<br>6<br>5<br>1<br>4<br>3<br>2 0.1<br> TJ = 150 [o] C<br>1  TC = 25 [o] C<br> Single Pulse<br>0<br>0 100 200 300 400 500 600 0.01<br>1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules<br> - Amperes<br>OSS ID<br>E<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTP8N65X2M** 

**==> picture [538 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>10<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_8N65X2M(X2-R2T5) 3-24-17 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixtp8n65x2m/mosfet-n-ch-650v-4a-to-220/dp/2674792)
---

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