# Power MOSFET, N Channel, 200 V, 86 A, 0.013 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:3996614/)

**URL**: https://novapart.co/products/IXTP86N20X4/power-mosfet-n-channel-200-v-86-a-0013-ohm-to-220
**SKU**: IXTP86N20X4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.8300
**Stock**: 200+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 86A |
| Drain Source On State Resistance | 0.013ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3996614/)

|**X4-Class**|**X4-Class**|**X4-Class**|**IXTP86N20X4**|**IXTP86N20X4**|**VDSS**|**=**|**200V**|**200V**|
|---|---|---|---|---|---|---|---|---|
|**Power MOSFETTM**|||||**ID25**|**=**|**86A**||
||||||**RDS(on)**||**13m**||
|||||D|||||
|N-Channel Enhancement Mode|||||||||
|Avalanche Rated|Avalanche Rated||||||||
|||||G|**TO-220**||||
||||||**(IXTP)**||||
|||||S|||||
|**Symbol**|**Test Conditions**||**Maximum Ratings**||S<br>GD||D (Tab)||
|**VDSS**|TJ|= 25C to 175C|200|V|||||
|**VDGR**|TJ|= 25C to 175C, RGS= 1M|200|V|G  = Gate           D       =  Drain|G  = Gate           D       =  Drain|G  = Gate           D       =  Drain||
|**VGS**|Continuous||20|V|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain||
|**VGSM**|Transient||30|V|||||
|**ID25**|TC|= 25C|86|A|||||
|**IDM**|TC|= 25C, Pulse Width Limited by TJM|160|A|||||
|**IA**|TC|= 25C|43|A|**Features**||||
|**EAS**|TC|= 25C|500                    mJ|500                    mJ|||||
|**dv/dt**|IS|IDM, VDD VDSS, TJ 150C|50                  V/ns|50                  V/ns|International Standard Package<br>Low RDS(ON)and QG|||International Standard Package|
|**PD**|TC|= 25C|300|W|Avalanche Rated<br>Low Package Inductance||||
|**TJ**|||-55 ... +175|C|||||
|**TJM**|||175|C|||||
|**Tstg**|||-55 ... +175|C|**Advantages**||||
|**TL**|Maximum Lead Temperature for Soldering                    300|||°C|High Power Density||||
||1.6 mm (0.062 in.) from Case for 10s|1.6 mm (0.062 in.) from Case for 10s|||Easy to Mount||||
|**Md**|Mounting Torque<br>1.13 / 10        Nm/lb.in||1.13 / 10        Nm/lb.in|1.13 / 10        Nm/lb.in|Space Savings||||
|**Weight**||3|3|g|||||



- International Standard Package 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Applications** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250µA<br>200|V<br>~~—~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250µA<br>2.5<br>4.5      V|4.5      V<br>~~—~~<br>~~—_~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~—_~~<br>~~—_~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>5<br>TJ= 150C<br>300|5<br>300<br>~~=~~|5A<br>300A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|11           13   m<br>~~=~~|11           13   m|



- Switch-Mode and Resonant-Mode 

- Power Supplies 

- DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS101006C(7/21) 

© 2021 Littelfuse, Inc. 

**IXTP86N20X4** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br><br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br><br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br><br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1<br>50|82|S|
|**RGi**<br>Gate Input Resistance|4.75||
|**Ciss**<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>**Crss**|2250<br>660<br>185|pF<br>pF<br>pF|
|**td(on)**<br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|27<br>38<br> <br>76  <br>35|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**Qgd**|70<br>20<br>38|nC<br>nC<br>nC|
|**RthJC**<br>**RthJC**<br>|<br>0.50|0.50C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||86          A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||344          A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4          V|
|**trr** <br>**IRM** <br>**QRM** <br>IF= 43A, -di/dt = 200A/µs,<br>VR= 100V|96<br>16.7<br>0.8|ns<br>A<br>µC|



Note 1: Pulse test, t  300s, duty cycle, d 2 % 

Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTP86N20X4** 

**==> picture [523 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>90 300<br>VGS = 15V VGS = 15V<br>80 10V 10V<br>9V 9V<br>250<br>8V<br>70 7V<br>8V<br>60 200<br>50<br>150<br>40<br>7V<br>6V<br>30 100<br>20<br>6V<br>50<br>10<br>5V<br>5V<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 43A Value vs. Junction Temperature** 

**Fig. 3. Output Characteristics @ TJ = 150[o] C** 

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**----- Start of picture text -----**<br>
90 3.0<br>VGS = 15V<br>80 10V9V 2.6 VGS = 10V<br>8V<br>70 7V<br>2.2<br>60 I D = 86A<br>50 6V 1.8<br>I D = 43A<br>40 1.4<br>30<br>1.0<br>20<br>5V<br>0.6<br>10<br>4V<br>0 0.2<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br>Drain Current vs. Junction Temperature<br>4.5 1.2<br>4.0 VGS = 10V<br>1.1 BVDSS<br>3.5<br>TJ = 150 [o] C 1.0<br>3.0<br>2.5 0.9<br>2.0<br>0.8 VGS(th)<br>1.5<br>TJ = 25 [o] C 0.7<br>1.0<br>0.5 0.6<br>0 50 100 150 200 250 300 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. 

**IXTP86N20X4** 

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**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>100 120<br>90 VDS = 10V<br>100<br>80<br>70<br>80<br>60<br>50 60<br>40<br>40<br>30 TJ = 150 [o] C<br>25 [o] C<br>20<br>20<br>- 40 [o] C<br>10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 175 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>TC - Degrees Centigrade VGS - Volts<br>Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>140<br>VDS = 10V 250<br>120 TJ = - 40 [o] C<br>100 200<br>25 [o] C<br>80<br>150<br>60 150 [o] C TJ = 150 [o] C<br>100<br>40 TJ = 25 [o] C<br>50<br>20<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9 VDS = 100V<br>I D = 43A 10,000<br>8 I G = 10mA      Ciss<br>7<br>1,000<br>6<br>Coss<br>5 100<br>4<br>Crss<br>10<br>3<br>2<br>1<br>f = 1 MHz<br>1<br>0 0<br>0 10 20 30 40 50 60 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br> - Siemens<br> - Amperes<br>g f s IS<br>Volts<br> -<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

**IXTP86N20X4** 

**==> picture [523 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>8 1000<br>7<br>RDS( on ) Limit<br>6 100 25µs<br>5 100µs<br>4 10<br>3<br>1ms<br>2 1  T J = 175 [o] C<br> TC = 25oC<br>10ms<br>1 Single Pulse   DC<br>0 0.1<br>0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Fig. 15. Maximum Transient Thermal Impedance** 

**==> picture [514 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. 

IXYS REF:  T_86N20X4(205-S203) 5-7-20 

**IXTP86N20X4** 

**==> picture [171 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220 Outline<br>E A<br>0P<br>er A1<br>Q H1<br>|} G4 |<br>D (D2)<br>— ; D1<br>4<br>1 2 3 (E1)<br>A2<br>L1<br>‘<br>|<br>e a c 4 3X b<br>w he e1 3X b2<br>1 - Gate<br>=: 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 



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