# Power MOSFET, N Channel, 1 kV, 6 A, 2.2 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3930296/)

**URL**: https://novapart.co/products/IXTP6N100D2/power-mosfet-n-channel-1-kv-6-a-22-ohm-to-220ab
**SKU**: IXTP6N100D2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.1600
**Stock**: 200+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | - |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 2.2ohm |
| Gate Source Threshold Voltage Max | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930296/)

## **Depletion Mode MOSFET** 

|**Depletion Mode**|**Depletion Mode**|**IXTA6N100D2**|**IXTA6N100D2**|**IXTA6N100D2**|||**VDSX**|||**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|**=     1000V**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**MOSFET**||**IXTP6N100D2**|||||**ID(on)**|||**>     6A**|||||**6A**|**6A**|**6A**|||
|||**IXTH6N100D2**|||||**RDS(on)**|||**     2.2**|||||**2.2**|**2.2**|**2.2**|||
|**N-Channel**||**TO-263 AA (IXTA)**<br>G<br>S<br>D (Tab)<br>**G**<br>**D**<br>**S**<br>~~js~~||||||||||||||||||
||||||||**TO-220AB (IXTP)**||||**TO-220AB (IXTP)**|||||||||
|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|||||||||||||||||
|||||||||||||||||||||
|**VDSX**<br>**VGSX**<br>**VGSM**|TJ = 25C to 150C<br>Continuous<br>Transient|1000<br>20<br>30||V<br>V<br>V||||G<br>D|||||S||||D (Tab)|||
|**PD**|TC = 25C|300||W|||**TO-247 (IXTH)**|||||||||||||
|**TJ**||- 55 ... +150||C||||||||||||||||
|**TJM**||150||C||||||||||||||||
|**Tstg**||- 55 ... +150||C||||||||||||||||
|||||||||||||||||||||
|**TL**Maximum Lead Temperature for Soldering                    300<br>**TSOLD**|Maximum Lead Temperature for Soldering                    300<br>1.6 mm (0.062in.) from Case for 10s                              260|||°C<br>°C|||G||D||||S||||D (Tab)|||
|**Md**|Mounting Torque (TO-220 & TO-247)|1.13 / 10|Nm/lb.in.|||||||||||||||||
|**Weight**<br>TO-220                                                                                          3.0                          g|**Weight**TO-263                                                                                       2.5                         g<br>TO-220                                                                                          3.0                          g|TO-263                                                                                       2.5                         g<br>TO-220                                                                                          3.0                          g|TO-263                                                                                       2.5                         g<br>TO-220                                                                                          3.0                          g|TO-263                                                                                       2.5                         g<br>TO-220                                                                                          3.0                          g|||G = Gate<br>S = Source|||||||D       =  Drain<br>Tab   =  Drain|||D       =  Drain<br>Tab   =  Drain|||
|TO-247                                                                                       6.0                         g|TO-247                                                                                       6.0                         g|TO-247                                                                                       6.0                         g|TO-247                                                                                       6.0                         g|TO-247                                                                                       6.0                         g||||||||||||||||



## **Features** 

- Normally ON Mode 

- International Standard Packages 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVDSX**<br>VGS = - 5V, ID= 250A                                       1000|~~:~~|V|
|**VGS(off)**<br>VDS = 25V, ID= 250A<br>- 2.5                      - 4.5     V|- 2.5                      - 4.5     V<br>~~:~~|- 2.5                      - 4.5     V|
|**IGSX**<br>VGS =20V, VDS= 0V<br>|<br>~~:~~|100<br>nA|
|**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>5<br>TJ= 125C<br>50|5<br>50<br>~~=~~|5<br>A<br>50A|
|**RDS(on)**<br>VGS = 0V, ID= 3A,  Note 1<br>2.2|2.2<br>~~=~~|2.2<br>|
|**ID(on)**<br>VGS = 0V, VDS= 50V,  Note 1<br>6||A|



- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- Audio Amplifiers 

- Start-Up Circuits 

- Protection Circuits 

- Ramp Generators 

- Current Regulators 

- Active Loads 

DS100183C(4/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTA6N100D2     IXTP6N100D2 IXTH6N100D2** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**<br><br>|**Typ.**<br>|**Max.**<br>|
|**gfs**<br>VDS= 30V, ID= 3A,  Note 1                             2.6<br>**Ciss**<br> <br>**Coss**<br>VGS= -10V, VDS=  25V, f = 1MHz<br> <br>**Crss**<br>|4.2<br>2650<br>167<br>41|S<br>pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS=5V, VDS= 500V, ID= 3A<br>RG= 2.4(External)|25<br>80<br>34<br>47|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>95<br>nC<br>**Qgs**<br>VGS= 5V, VDS= 500V, ID= 3A<br>11<br>nC<br>**Qgd**<br>51<br>nC<br>**RthJC**<br>0.41C/W<br>**RthCS**TO-220                                                                      0.50<br>C/W<br> TO-247                                                                 0.21C/W|||



## **Safe-Operating-Area Specification** 

**Characteristic Values Symbol Test Conditions Min.      Typ.        Max. SOA** VDS = 800V, ID = 225mA, TC = 75C, Tp = 5s      180 W 

## **Source-Drain Diode** 

**==> picture [162 x 309] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220 (IXTP) Outline<br>Pins: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br>


**TO-247 (IXTH) AD Outline** 

|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|
|---|---|---|
|J <br> <br>**VSD**<br>IF= 6A, VGS= -10V,  Note 1|<br>0.8|<br>1.3     V|
|**trr**<br> <br>**IRM** <br>**QRM** <br>IF= 3A, -di/dt = 100A/s<br>VR= 100V, VGS= -10V|952<br>16<br>7.6|ns<br>A<br>μC|



**==> picture [43 x 54] intentionally omitted <==**

Note  1.  Pulse test, t  300s, duty cycle, d  2%. 

|**TO-263 (IXTA) Outline**<br>1. ~~G~~ate|**TO-263 (IXTA) Outline**<br>1. ~~G~~ate||||||||
|---|---|---|---|---|---|---|---|---|
||||Dim.|Millimeter<br>Min.<br>Max.||Inches<br>Min.<br>Max.|||
||ate||A<br>b<br>b2<br>c<br>c2<br>D<br>D1<br>E<br>E1|4.06<br>0.51<br>1.14<br>0.40<br>1.14<br>8.64<br>8.00<br>9.65<br>6.22|4.83<br>0.99<br>1.40<br>0.74<br>1.40<br>9.65<br>8.89<br>10.41<br>8.13|.160<br>.020<br>.045<br>.016<br>.045<br>.340<br>.280<br>.380<br>.270|.190<br>.039<br>.055<br>.029<br>.055<br>.380<br>.320<br>.405<br>.320||



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**----- Start of picture text -----**<br>
1  = Gate<br>2 = Drai n<br>3 = So ur ce<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTA6N100D2  IXTP6N100D2 IXTH6N100D2** 

**==> picture [264 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>6<br>VGS = 5V<br>           2V<br>5           1V<br>4 0V<br>3<br>-1V<br>2<br>1 - 2V<br>0 - 3V<br>0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>14<br>VGS = 5V<br>           2V<br>12           1V<br>10<br>0V<br>8<br>6<br>-1V<br>4<br>2<br>- 2V<br>0 - 3V<br>0 10 20 30 40 50 60<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125 [o] C Fig. 4. Drain Current @ TJ = 25J = 25 = 25 [[o]] C<br>6 1.E-01<br>VGS = 5V  VGSGS =<br>          0V  - 3.00V<br>5 1.E-02<br>- 3.25V 3.25V<br>4 1.E-03<br>- 3.50V 3.50V<br>-1V<br>3 1.E-04 - 3.75V 3.75V<br>- 4.00V<br>- 4.25V<br>2 1.E-05 - 4.50V 4.50V<br>- 2V<br>1 1.E-06<br>- 3V<br>0 1.E-07<br>0 5 10 15 20 25 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts VDS - VoltsDS - Volts - Volts<br>Fig. 5. Drain Current @ TJ = 100 [o] C Fig. 6. Dynamic Resistance vs. Gate Voltage<br>1.E-01 1.E+09<br>∆VDS = 700V - 100V<br>VGS = - 3.25V<br>1.E-02<br>- 3.50V 1.E+08<br>1.E-03 - 3.75V<br>1.E+07<br>- 4.00V<br>TJ = 25 [o] C<br>1.E-04<br>- 4.25V<br>TJ = 100 [o] C<br>1.E+06<br>- 4.50V<br>1.E-05<br>1.E-06 1.E+05<br>0 100 200 300 400 500 600 700 800 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8<br>VDS - Volts VGS - Volts<br> - Amperes  - Amperes<br>ID IDD<br> - Ohms<br> - Amperes O<br>ID R<br>**----- End of picture text -----**<br>


**==> picture [264 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. Drain Current @ TJ = 25J = 25 = 25 [[o]] C<br>1.E-01<br>VGSGS =<br> - 3.00V<br>1.E-02<br>- 3.25V 3.25V<br>1.E-03<br>- 3.50V 3.50V<br>1.E-04 - 3.75V 3.75V<br>- 4.00V<br>- 4.25V<br>1.E-05<br>- 4.50V 4.50V<br>1.E-06<br>1.E-07<br>0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - VoltsDS - Volts - Volts<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTA6N100D2     IXTP6N100D2 IXTH6N100D2** 

**==> picture [537 x 638] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. RDS(on) Normalized to ID = 3A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>3.0 2.6<br>VGS = 0V 2.4  VGS = 0V<br>2.6<br>I D = 3A                 5V<br>2.2<br>2.2 2.0 TJ = 125 [o] C<br>1.8<br>1.8<br>1.6<br>1.4<br>1.4<br>1.0 1.2 TJ = 25 [o] C<br>1.0<br>0.6<br>0.8<br>0.2 0.6<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 9. Input Admittance Fig. 10. Transconductance<br>16 12<br>14 VDS = 30V  V DS  = 30V<br>10 TJ = - 40 [o] C<br>12<br>8<br>10 25 [o] C<br>8 6 125 [o] C<br>T J = 125 [o] C<br>6          25 [o] C<br>       - 40 [o] C  4<br>4<br>2<br>2<br>0 0<br>-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 2 4 6 8 10 12 14 16<br>VGS - Volts ID - Amperes<br>Fig. 11. Breakdown and Threshold Voltages<br>Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>vs. Junction Temperature<br>1.3 18<br>16 VGS = -10V<br>1.2 14<br>VGS(off) @ VDS = 25V<br>12<br>1.1<br>10<br>BVDSX @ VGS = - 5V 8<br>1.0 TJ = 125 [o] C<br>6<br>TJ = 25 [o] C<br>4<br>0.9<br>2<br>0.8 0<br>-50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>TJ - Degrees Centigrade VSD - Volts<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br> - Siemens<br> - AmperesID gf s<br> - Normalized<br> - Amperes<br>BV / VGS(off) IS<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXTA6N100D2  IXTP6N100D2 IXTH6N100D2** 

**==> picture [535 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Capacitance Fig. 14. Gate Charge<br>10,000 5<br>4  V DS = 500V<br> I D = 3A<br>3<br> I G = 10mA<br>Ciss<br>2<br>1,000<br>1<br>0<br>-1<br>100 Coss<br>-2<br>-3<br>f = 1 MHz  Crss -4<br>10 -5<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100<br>VDS - Volts QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 15. Forward-Bias Safe Operating Area @ TC = 25[o] C** 

**Fig. 16. Forward-Bias Safe Operating Area @ TC = 75[o] C** 

**==> picture [530 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>TJ = 150 [o] C TJ = 150 [o] C<br>T C  = 25 [o] C    TC = 75 [o] C<br>Single Pulse  Single Pulse<br>RDS(on) Limit RDS(on) Limit 25μs<br>10 10<br>100μs<br>100μs<br>1ms<br>1 1 1ms<br>10ms<br>100ms 10ms<br>DC 100ms<br>DC<br>0.1 0.1<br>10 100 1,000 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 17. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - Amperes  - Amperes<br>ID ID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_6N100D2(6C) 7-15-14-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTP6N100D2/power-mosfet-n-channel-1-kv-6-a-22-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixtp6n100d2/mosfet-n-ch-1kv-6a-to-220ab/dp/3930296)
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