# MOSFET, N-CH, 200V, 60A, TO-220AB
**URL**: https://novapart.co/products/IXTP60N20T./mosfet-n-ch-200v-60a-to-220ab
**SKU**: IXTP60N20T.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.4200
**Stock**: 10+
**Lead Time**: 235 days (indicative)
## Description
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Trench Series |
| Qualification | - |
| Power Dissipation | 500W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 0.032ohm |
| Gate Source Threshold Voltage Max | 5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3949110/)
## **Trench[TM] Power MOSFET**
## **IXTA60N20T IXTP60N20T IXTQ60N20T**
**V = 200V DSS I = 60A D25 R ≤ 40m Ω DS(on)**
N-Channel Enhancement Mode For PDP Drivers Avalanche Rated
**TO-263 AA (IXTA)** G S ~~®~~ D (Tab)
**TO-220AB (IXTP)**
|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|
|---|---|---|---|---|---|---|---|---|---|
|**Symbol**
**Test Conditions**
**Maximum Ratings**
**VDSS**
TJ = 25°C to 175°C
200
V
**VDGR**
TJ = 25°C to 175°C, RGS= 1MΩ
200
V
**VGSS**
Continuous
±20
V
**VGSM**
Transient
±30
V
G
D S
D (Tab)
~~Oe~~||||||||||
|**ID25**|TC = 25°C|60||A|**TO-3P (IXTQ)**|||||
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|150||A||||||
|**IA**
TC = 25°C
30
A
**EAS**
TC = 25°C
700
mJ
**PD**
TC = 25°C
500
W
~~a~~||||||D
G
S||D (Tab)||
|**TJ**
**TJM**||-55 ... +175
175||°C
°C|G = Gate
S = Source|G = Gate
D = Drain
S = Source
Tab = Drain||D = Drain
Tab = Drain||
|**Tstg**||-55 ... +175||°C|**Features**|||||
|**TL**|1.6mm (0.062in.) from Case for 10s|300||°C||||||
|**Tsold**|Plastic Body for 10 Seconds|260||°C||High Current Handling Capability||||
|**Md**|Mounting Torque (TO-220 &TO-3P)|1.13 / 10|Nm/lb.in.|||175°C Operating Temperature
Avalanche Rated||175°C Operating Temperature|175°C Operating Temperature|
|**Weight**|TO-263|2.5||g||Fast Intrinsic Rectifier||||
||TO-220
3.0 g
TO-3P
5.5 g|3.0 g
5.5 g|3.0 g
5.5 g|3.0 g
5.5 g||Low RDS(on)||||
||||||**Advantages**|||||
|**Symbol**
(TJ= 25°C Unless Otherwise Specified)
**BVDSS**|**Test Conditions Characteristic Values**
C Unless Otherwise Specified)
**Min. Typ. Max.**
VGS = 0V, ID= 250μA
200|**Test Conditions Characteristic Values**
**Min. Typ. Max.**
200
V
~~4+~~|||:|Easy to Mount
Space Savings
High Power Density||||
|**VGS(th)**
**IGSS**
**IDSS**
**RDS(on)**|VDS = VGS, ID= 250μA
3.0
VGS =±20V, VDS= 0V
VDS = VDSS, VGS= 0V
TJ= 150°C
VGS = 10V, ID= 0.5 • ID25, Note 1|3.0 5.0 V
±200 nA
1μA
250μA
32 40 mΩ
**Applications**
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
||~~—~~
:
~~T°~~
~~—~~
:|||||||Switch-Mode and Resonant-Mode|
High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low R DS(on)
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
DS99359B(7/10)
© 2010 IXYS CORPORATION, All Rights Reserved
## **IXTA60N20T IXTP60N20T IXTQ60N20T**
|**Symbol**
(TJ= 25°C,|**Test Conditions**
Unless Otherwise Specified)
|**Characteristic Values**
**Min. Typ. Max.**|**Characteristic Values**
**Min. Typ. Max.**|**Characteristic Values**
**Min. Typ. Max.**||**TO-220**|**TO-220**|**TO-220**|**TO-220**|**TO-220**|**TO-220**|**TO-220**|**TO-220**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|**(IXTP) Outline**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||||||||||||||||||||
|**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1|40|62||S|||||||||||||||||||||||||||||||||||||
|**Ciss**
**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|
|4530
490||pF
pF|||||||||||||||||||||||||||||||||||||
|**Crss**|||72||pF|||||||||||||||||||||||||||||||||||||
|**td(on)**
**tr**
**td(off)**|
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|
|22
13
33|
|ns
ns
ns|||||||||||||||||||||||||||||||||||||
|**tf**|||22||ns|||||||||||||||||||||||||||||||||||||
|**Qg(on)**|||73||nC||Pins:|||||||1||- Gate||||||||||||2||- Drain||||||||||||
|**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||22||nC|||||||||3||- Source||||||||||||||||||||||||||
|**Qgd**|||22||nC|||||||||||||||||||||||||||||||||||||
|**RthJC**||||0.30 °C/W||||||||||||||||||||||||||||||||||||||
|**RthCS**
**RthCS**|TO-220
TO-3P|
|0.50
0.25|°C/W
°C/W||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||
|**Source-Drain Diode**||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||
|**Symbol**|**Test Conditions**|**Characteristic Values**||||||||||||||||||||||||||||||||||||||||
|(TJ= 25°C,|Unless Otherwise Specified)
|**Min.**|**Typ.**|**Max.**||||||||||||||||||||||||||||||||||||||
|**IS**|VGS= 0V|||60|A|||||||||||||||||||||||||||||||||||||
|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs** VDS= 10V, ID= 0.5 • ID25, Note 1 40 62 S
**Ciss**
4530
pF
**Coss**VGS= 0V, VDS= 25V, f = 1MHz
490
pF
**Crss**
72
pF
**td(on)**
22 ns
**tr**
13 ns
**td(off)**
33 ns
**tf**
22 ns
**Qg(on)**
73
nC
**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
22
nC
**Qgd**
22
nC
**RthJC**
0.30 °C/W
**RthCS**
TO-220
0.50 °C/W
**RthCS**
TO-3P
0.25 °C/W
**Resistive Switching Times**
VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25
RG= 10Ω(External)|Pins:
1 - Gate
3 - Source
**TO-220 (IXTP) O**|Pins:
1 - Gate
3 - Source
**TO-220 (IXTP) O**|2 - Drain
**utline**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Note
1.Pulse test, t≤300μs, duty cycle, d≤2%.
**TO-263 (IXTA) Outline**
1. ~~G~~ate
~~2~~Cll
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.40
0.74
.016
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
8.00
8.89
.280
.320
E
9.65
10.41
.380
.405
E1
6.22
8.13
.270
.320
e
2.54
BSC
.100
BSC
**TO-3P (IXTQ) Outl**
**Source-Drain Diode**
**Symbol**
**Test Conditions**
**Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**IS**VGS= 0V
60 A
**ISM**Repetitive, Pulse Width Limited by TJM
240
A
**VSD**IF= 60A, VGS= 0V, Note 1
1.3
V
**trr**
118 ns
**IRM**9.3 A
**QRM**
550 nC
IF= 0.5 • ID25, VGS= 0V
-di/dt = 100A/μs
VR= 85V||||||||||||||||
|||||||||||||||||
|**VSD**|IF= 60A, VGS= 0V, Note 1|||||||||||||||
||||||||||||||**TO-3P (IXTQ) Outl**||**ine**|
|**trr**
**IRM**
**QRM**|
IF= 0.5 • ID25, VGS= 0V
-di/dt = 100A/μs
VR= 85V||||
|
||||118
9.3
550||||||
|Note
1
|.Pulse test, t≤300μs, duty cycle, d
**TO-263 (IXTA) Outline**|||||||||||||||
||||||≤2%
Dim.|||||||||||
||||1. ~~G~~ate
~~2~~Cll||A
b
b2||Min.
4.06
0.51
114|Max.
4.83
0.99
140|Min.
.160
.020
045||Max.
.190
.039
055|||||
||||||c
c2
D
D1
E
E1
e||.
0.40
1.14
8.64
8.00
9.65
6.22
2.54|.
0.74
1.40
9.65
8.89
10.41
8.13
BSC|.
.016
.045
.340
.280
.380
.270
.100||.
.029
.055
.380
.320
.405
.320
BSC|||||
|IXYS Reserves the Right to C||||||||||||||||
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
**IXTA60N20T IXTP60N20T IXTQ60N20T**
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Fig. 1. Output Characteristics @ TJ = 25ºC
60
VGS = 15V
10V
50 8V
7V
40
30 6V
20
10
5V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS - Volts
- Amperes
ID
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**Fig. 3. Output Characteristics @ TJ = 150ºC**
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60
V GS = 15V
10V
50 7V
40
6V
30
20
5V
10
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.
Drain Current
5.0
4.5 V GS = 10V
TJ = 175ºC
4.0
3.5
3.0
2.5
TJ = 25ºC
2.0
1.5
1.0
0.5
0 20 40 60 80 100 120 140 160 180 200
ID - Amperes
- Amperes
ID
- Normalized
DS(on)
R
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**Fig. 2. Extended Output Characteristics @ TJ = 25ºC**
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200
V GS = 15V
180 10V
160
8V
140
120
7V
100
80
60
6V
40
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
- Amperes
ID
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## **Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature**
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3.4
3.0 V GS = 10V
2.6
I D = 60A
2.2
I D = 30A
1.8
1.4
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
- Normalized
DS(on)
R
- Amperes
ID
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© 2010 IXYS CORPORATION, All Rights Reserved
## **IXTA60N20T IXTP60N20T IXTQ60N20T**
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Fig. 7. Input Admittance Fig. 8. Transconductance
120 120
TJ = - 40ºC
100 100
80 80
TJ = 150ºC 25ºC
25ºC
60 - 40ºC 60
150ºC
40 40
20 20
0 0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 100 120 140
VGS - Volts ID - Amperes
- Siemens
- Amperes f s
ID g
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**Fig. 9. Forward Voltage Drop of Intrinsic Diode**
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180
160
140
120
100
80
60 T J = 150ºC
40 T J = 25ºC
20
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Volts
- Amperes
IS
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**Fig. 10. Gate Charge**
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10
9 VDS = 100V
I D = 30A
8
I G = 10mA
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70
QG - NanoCoulombs
- Volts
GS
V
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**Fig. 11. Capacitance**
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10,000
C iss
1,000
Coss
100
C rss
f = 1 MHz
10
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoFarads
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**Fig. 12. Maximum Transient Thermal Impedance**
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1.00
0.10
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
- ºC / W
(th)JC
Z
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_60N20T(5G)02-10-10
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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
## Links
- [View this product on Novapart](https://novapart.co/products/IXTP60N20T./mosfet-n-ch-200v-60a-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixtp60n20t/mosfet-n-ch-200v-60a-to-220ab/dp/3949110)
---
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