# Power MOSFET, PolarFET, N Channel, 250 V, 42 A, 0.084 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1427371/)

**URL**: https://novapart.co/products/IXTP42N25P/power-mosfet-polarfet-n-channel-250-v-42-a-0084
**SKU**: IXTP42N25P
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1500
**Stock**: 10+
**Lead Time**: 197 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipatio

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.084ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1427371/)

## **PolarHT[TM] Power MOSFET** 

**IXTA 42N25P V =   250     V DSS IXTP 42N25P I =     42     A D25 IXTQ 42N25P R ≤ 84 m Ω DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

**TO-263 (IXTA)** 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>250<br>V<br>~~a ~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>250<br>V<br>~~a ~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>250<br>V<br>~~a ~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>250<br>V<br>~~a ~~|||G<br>S<br> =|G<br>S<br> =|G<br>S<br> =|G<br>S<br> =|G<br>S<br> =|G<br>S<br> =|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ|250|V|||||||(TAB)||||
|**VGS**<br>Continuous<br>±20<br>V<br>**VGSM**<br>Transient<br>±30<br>V<br>**ID25**<br>TC = 25°C<br>42<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>110<br>A<br>**IAR**<br>TC = 25°C<br>42<br>A<br>**EAR**<br>TC = 25°C<br>30<br>mJ<br>**TO-220 (IXTP)**<br>D<br>(TAB)<br>G<br>S<br>~~SH~~||||||||||||||
|**EAS**|TC = 25°C|1.0|J|||||||||||
|||||**TO-3P (IXTQ)**||||||||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|10|V/ns|||||||||||
||TJ ≤150°C, RG= 10Ω|||||||||||||
|**PD**|TC = 25°C|300|W|||||||||||
|**TJ**<br>**TJM**<br>**Tstg**||-55 ... +150<br>150<br>-55 ... +150|°C<br>°C<br>°C|G<br>D|S|||||||(TAB)||
|**TL**|1.6 mm (0.062 in.) from case for 10 s|300|°C|||||||||||
|**TSOLD**|Plastic body for 10 s|260|°C|G = Gate||||||D = Drain||||
|||||S = Source||||||TAB = Drain|TAB = Drain|||
|**Md**|Mounting torque<br>(TO-3P / TO-220)|1.13/10|Nm/lb.in.|||||||||||
|**Weight**|TO-3P|5.5|g|||||||||||
||TO-220<br>TO-263|4<br>3|g<br>g|**Features**||||||||||



> l International standard packages 

- l Unclamped Inductive Switching (UIS) rated 

|(TC, unless otherwise specified)|||
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.**|**Min.    Typ.**|**Max.**|
|**BVDSS**<br>VGS = 0 V, ID= 250µA<br>250|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250µA<br>3.0|~~—~~|5.5<br>V|
|**IGSS**<br>VGS =±20 VDC, VDS= 0|~~—~~|±100<br>nA|
|**IDSS**<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 125°C|~~a~~|25<br>µA<br>250<br>µA|
|**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %||84<br>mΩ|



> l Low package inductance 

- easy to drive and to protect 

DS99157E(12/05) 

© 2006 IXYS All rights reserved 

## **IXTA 42N25P  IXTP 42N25P IXTQ 42N25P** 

|**Symbol**||**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|
|---|---|---|---|---|---|---|---|
|||(T|(TJ= 25°C, unless otherwise specified)|||||
|||||**Min.**|**Typ.**|**Max.**||
|**gfs**||VDS= 10 V; ID= 0.5 ID25, pulse test||12|20||S|
|**Ciss**|||||2300||pF|
|||||||||
|**Coss**<br>**Crss**||VGS= 0 V, VDS= 25 V, f = 1 MHz|||430<br>115||pF<br>pF|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>RG= 10Ω(External)|||24<br>28<br>81<br>30<br>7||ns<br>ns<br>ns<br>ns|
|**Qg(on)**|||||70||nC|
|**Qgs**||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25|||17||nC|
|**Qgd**|||||37||nC|
|**RthJC**||||||0.42°C/W||
|**RthCS**||(TO-3P)|||0.21||°C/W|
|||(TO-220)|||0.25||°C/W|



|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|
|---|---|---|---|---|---|
||(T|(TJ= 25°C, unless otherwise specified)||||
|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**||
|**IS**|VGS= 0 V|||42|A|
|**ISM**|Repetitive|||110|A|
|**VSD**|IF= IS, VGS= 0 V,|||1.5|V|
||Pulse test, t≤300µs, duty cycle d≤2 %|||||
|**trr**|IF= 25 A||200||ns|
||-di/dt = 100 A/µs|||||
|**QRM**<br>~~a~~|VR= 100 V||2.0||µC|



## **TO-3P (IXTQ) Outline** 

## **TO-220 (IXTP) Outline** 

## **TO-263 (IXTA) Outline** 

Pins: 1 - Gate 2 - Drain 

IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6,771,478 B2 

**IXTA 42N25P  IXTP 42N25P IXTQ 42N25P** 

**Fig. 1. Output Characteristics** 

**==> picture [225 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
@ 25ºC<br>45<br>VGS = 10V<br>40<br>           9V<br>35<br>8V<br>30<br>25<br>7V<br>20<br>15<br>6V<br>10<br>5<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 125ºC** 

**==> picture [232 x 405] intentionally omitted <==**

**----- Start of picture text -----**<br>
45<br>VGS = 10V<br>40<br>          9V<br>35           8V<br>30<br>25<br>7V<br>20<br>15<br>6V<br>10<br>5<br>5V<br>0<br>0 1 2 3 4 5 6 7 8 9<br>V D S - Volts<br>Fig. 5. RDS(on) Norm alized to<br>0.5 ID25 Value vs. ID<br>4.6<br>4.2 VGS = 10V<br>3.8<br>3.4<br>3 TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4<br>TJ = 25ºC<br>1<br>0.6<br>0 10 20 30 40 50 60 70 80 90 100 110<br>I D - Amperes<br> - Amperes<br>D<br>I<br>  - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [229 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
110<br>100 V GS = 10V<br>90<br>9V<br>80<br>70<br>8V<br>60<br>50<br>40<br>7V<br>30<br>20<br>10 6V<br>5V<br>0<br>0 3 6 9 12 15 18 21 24 27<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature** 

**==> picture [232 x 406] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8<br>2.6<br>VGS = 10V<br>2.4<br>2.2<br>2<br>1.8<br>ID = 42A<br>1.6<br>1.4 I D = 21A<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Tem perature<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br>  - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXTA 42N25P  IXTP 42N25P IXTQ 42N25P** 

**Fig. 7. Input Admittance** 

**==> picture [230 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>60<br>50<br>40<br>30<br> TJ = 125ºC<br>20<br>         25ºC<br>        -40ºC<br>10<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [231 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>105<br>90<br>75<br>60<br>45<br>TJ = 125ºC<br>30<br>TJ = 25ºC<br>15<br>0<br>0.4 0.6 0.8 1 1.2 1.4<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [232 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>f  = 1MHz<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

**==> picture [229 x 407] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>27 TJ = -40ºC<br>       25ºC<br>24      125ºC<br>21<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 125V<br>8 ID = 21A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [234 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 150ºC<br>T C  = 25ºC<br>RDS(on) Limit<br>100<br>25µs<br>100µs<br>1ms<br>10<br>10ms<br>DC<br>1<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXTA 42N25P  IXTP 42N25P IXTQ 42N25P** 

**==> picture [253 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig . 13. M axim u m  T r an s ie n t T h e r m al Re s is tan ce<br>**----- End of picture text -----**<br>


**==> picture [493 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
0 .4 5<br>0 .4 0<br>0 .3 5<br>0 .3 0<br>0 .2 5<br>0 .2 0<br>0 .1 5<br>0 .1 0<br>0 .0 5<br>1 1 0 1 0 0 1 0 0 0<br>Puls e W idth - millis ec onds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**==> picture [157 x 46] intentionally omitted <==**

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---

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