# Power MOSFET, N Channel, 300 V, 36 A, 0.092 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2782976/)

**URL**: https://novapart.co/products/IXTP36N30P/power-mosfet-n-channel-300-v-36-a-0092-ohm-to-220
**SKU**: IXTP36N30P
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.3400
**Stock**: 200+
**Lead Time**: 197 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (12-Jan-2017) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | PolarHT |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.092ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2782976/)

## **PolarHT[TM] Power MOSFET** 

**IXTA 36N30P V =     300     V DSS IXTP 36N30P I =       36     A D25 IXTQ 36N30P R ≤ 110  m Ω DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

||||||:||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||**TO-263 (IXTA)**|||||||||
|**Symbol**<br>**VDSS**<br>**VDGR**|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ||**Maximum Ratings**<br>300<br>V<br>300<br>V||||G<br>S<br>-||||||||
|**VGS**|Continuous||±30||V|||||D(TAB)|||||
|**VGSM**|Transient||±40||V||||||||||
|**ID25**<br>TC = 25°C<br>36<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>90<br>A<br>**IAR**<br>TC = 25°C<br>36<br>A<br>**EAR**<br>TC = 25°C<br>30<br>mJ<br>**EAS**<br>TC = 25°C<br>1.0<br>J<br>**TO-220 (IXTP)**<br>D<br>D(TAB)<br>G<br>S<br>~~SH~~|||||||||||||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||10||V/ns|**TO-3P (IXTQ)**|||||||||
||TJ ≤150°C, RG= 10Ω||||||||||||||
|**PD**|TC = 25°C||300||W||||||||||
|**TJ**||-55 ... +150|||°C||||||||||
|**TJM**<br>**Tstg**||150<br>-55 ... +150|||°C<br>°C||G<br>D S||||||D(TAB)||
|**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s||300<br>260||°C<br>°C||G = Gate<br>S = Source|||D = Drain<br>TAB = Drain|||||
|**Md**|Mounting torque<br>(TO-3P / TO-220)||1.13/10|Nm/lb.in.|||||||||||
|**Weight**|TO-3P||5.5||g|**Features**|||||||||
||TO-220||4||g||||||||||
||TO-263||3||g|l|International standard packages||||||||
|||||||l|Unclamped Inductive Switching (UIS)|||||||Unclamped Inductive Switching (UIS)|
||||||||rated||||||||
|**Symbol**<br>**Test Conditions**<br>(TJ= 25°C, unless otherwise specified)||**Characteristic Values**<br>**Min.    Typ.**<br>**Max.**||||l|Low package inductance<br>- easy to drive and to protect||||||||
|**BVDSS**<br>**VGS(th)**<br>**IGSS**|VGS = 0 V, ID= 250µA<br>VDS = VGS, ID= 250µA<br>VGS =±20 VDC, VDS= 0|300<br>3.0|5.5<br>±100<br>||~~—~~||V<br>V<br>nA|**Advantages**<br>l<br>Easy to mount<br>l<br>Space savings|||||||||
|**IDSS**|VDS =  VDSS|||1|µA|l|High power density||||||||
||VGS= 0 V<br>TJ= 125°C|||200|µA||||||||||
|**RDS(on)**|VGS = 10 V, ID= 0.5 ID25||92|110|mΩ||||||||||
||Pulse test, t≤300µs, duty cycle d≤2 %||||||||||||||



- l International standard packages l Unclamped Inductive Switching (UIS) rated 

- l Low package inductance - easy to drive and to protect 

DS99155E(10/05) 

© 2005 IXYS All rights reserved 

**IXTA 36N30P  IXTP 36N30P IXTQ 36N30P** 

|cool|||**IXTA 36N30P  IXTP 36N30P**|**IXTA 36N30P  IXTP 36N30P**|**IXTA 36N30P  IXTP 36N30P**|**IXTA 36N30P  IXTP 36N30P**|**IXTA 36N30P  IXTP 36N30P**|
|---|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|||||
||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)||||||
|**gfs**|VDS= 10 V; ID= 0.5 ID25, pulse test|**Min.**<br>12|**Typ.**<br>22<br>~~| ~~||||**Max.**|S|
|**Ciss**||||2250|||pF|
|**Coss**<br>**Crss**|VGS= 0 V, VDS= 25 V, f = 1 MHz||||370<br>90||pF<br>pF|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>RG= 10Ω(External)|||24<br>30<br>97<br>28<br>-|||ns<br>ns<br>ns<br>ns|
|**Qg(on)**|||||70||nC|
|**Qgs**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||||17||nC|
|**Qgd**|||||35||nC|
|**RthJC**||||||0.42°C/W||
|**RthCS**|(TO-3P)||||0.21||°C/W|
||(TO-220)||||0.25||°C/W|
|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**||||||
||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)||||||
|**Symbol**|**Test Conditions**|**Min.**|||**Typ.**|**Max.**||
|**IS**|VGS= 0 V|||||36|A|
|**ISM**|Repetitive|||||90|A|
|**VSD**<br>**trr**<br>**QRM**|IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>IF= 25 A, -di/dt = 100 A/µs<br>VR= 100 V, VGS= 0 V||||250<br>2.0|1.5|V<br>ns<br>µC|



## **Source-Drain Diode                                                                Characteristic Values** 

## **TO-3P (IXTQ) Outline** 

## **TO-220 (IXTP) Outline** 

**TO-263 (IXTA) Outline** 

**==> picture [99 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 

6,683,344 6,727,585 6,710,405B2 6,759,692 

6,710,463 6,771,478 B2 

**IXTA 36N30P  IXTP 36N30P IXTQ 36N30P** 

**==> picture [243 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics<br>@ 25ºC<br>36<br>33 VGS = 10V<br>           9V<br>30<br>27 8V<br>24<br>21<br>18 7V<br>15<br>12<br>9<br>6V<br>6<br>3<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 125ºC** 

**==> picture [225 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
36<br>33 VGS = 10V<br>          9V<br>30<br>          8V<br>27<br>24<br>21 7V<br>18<br>15<br>6V<br>12<br>9<br>6<br>3 5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID** 

**==> picture [231 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.2<br>3.8 VGS = 10V<br>3.4<br>3 TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4<br>TJ = 25ºC<br>1<br>0.6<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [233 x 408] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>VGS = 10V<br>80<br>70 9V<br>60<br>8V<br>50<br>40<br>30 7V<br>20<br>6V<br>10<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VD S - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25<br>Value vs. Junction Temperature<br>3.1<br>2.8 V GS  = 10V<br>2.5<br>2.2<br>1.9<br>ID = 36A<br>1.6<br>1.3 I D = 18A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Drain Current vs. Case Temperature** 

**==> picture [231 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2005 IXYS All rights reserved 

**IXTA 36N30P  IXTP 36N30P IXTQ 36N30P** 

**Fig. 7. Input Admittance** 

**==> picture [230 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>60<br>50<br>40<br>30<br> TJ = 125ºC<br>20<br>         25ºC<br>        -40ºC<br>10<br>0<br>4.5 5 5.5 6 6.5 7 7.5 8 8.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [230 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>20<br>TJ = 25ºC<br>10<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [232 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>f  = 1MHz<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

**==> picture [229 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>30<br>25<br>T J  = -40ºC<br>       25ºC<br>20      125ºC<br>15<br>10<br>5<br>0<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [226 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 VDS = 150V<br>8 ID = 18A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [234 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 150ºC<br>RDS(on) Limit TC = 25ºC<br>100<br>25µs<br>100µs<br>10<br>1ms<br>10ms<br>DC<br>1<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXTA 36N30P  IXTP 36N30P IXTQ 36N30P** 

## **Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce** 

**==> picture [493 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
0 .4 5<br>0 .4 0<br>0 .3 5<br>0 .3 0<br>0 .2 5<br>0 .2 0<br>0 .1 5<br>0 .1 0<br>0 .0 5<br>1 1 0 1 0 0 1 0 0 0<br>Puls e W idth - millis ec onds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


© 2005 IXYS All rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTP36N30P/power-mosfet-n-channel-300-v-36-a-0092-ohm-to-220)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixtp36n30p/mosfet-n-ch-300v-36a-to-220/dp/2782976)
---

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