# Power MOSFET, P Channel, 200 V, 32 A, 0.13 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3930252/)

**URL**: https://novapart.co/products/IXTP32P20T/power-mosfet-p-channel-200-v-32-a-013-ohm-to-220ab
**SKU**: IXTP32P20T
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.9200
**Stock**: 200+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | TrenchP Series |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 32A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930252/)

## **TrenchP[TM] Power MOSFETs** 

## **IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T** 

P-Channel Enhancement Mode Avalanche Rated 

## **TO-263 AA (IXTA)** 

## **TO-220AB (IXTP)** 

**V =    - 200V DSS I =    - 32A D25 R ≤ 130m Ω DS(on)** 

## **TO-3P (IXTQ)** 

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G<br>S<br>D (Tab) G D S D (Tab)<br>**----- End of picture text -----**<br>


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G<br>D<br>S<br> D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**<br>**VDSS**|**Test Conditions**<br>TJ = 25°C to 150°C||**Maximum Ratings**<br>- 200<br>V|**Maximum Ratings**<br>- 200<br>V|**Maximum Ratings**<br>- 200<br>V|**TO-247 (IXTH)**|**TO-247 (IXTH)**||
|---|---|---|---|---|---|---|---|---|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ||- 200|- 200|V||||
|**VGSS**<br>**VGSM**<br>**ID25**<br>**IDM**|Continuous<br>Transient<br>TC = 25°C<br>TC = 25°C, Pulse Width Limited by TJM||+ 15<br>+ 25<br>- 32<br>- 96||V<br>V<br>A<br>A||G<br>S<br>D<br>D (Tab)||
|**IA**|TC = 25°C|- 32|- 32|- 32|A|G  = Gate<br>D       =  Drain<br>S  = Source<br>Tab   =  Drain||D       =  Drain<br>Tab   =  Drain|
|**EAS**|TC = 25°C|||1|J||||
|**PD**|TC = 25°C|||300|W||||
|**TJ**|||-55 ... +150||°C||||
|**TJM**<br>**Tstg**|||150<br>-55 ... +150||°C<br>°C|**Features**|||
|**TL**|1.6mm (0.062 in.) from Case for 10s|||300|°C||International Standard Packages|International Standard Packages|
|**TSOLD**|Plastic body for 10s|||260|°C||Avalanche Rated||
|**FC**<br>**Md**<br>**Weight**|Mounting Force   (TO-263)                      10..65 / 2.2..14.6<br>Mounting Torque (TO-220, TO-247 & TO-3P)<br>1.13 / 10         Nm/lb.in.<br>TO-263<br>2.5||||N/lb.<br>1.13 / 10         Nm/lb.in.<br>g||Extended FBSOA<br>Fast Intrinsic Diode<br> Low RDS(ON)and QG||
||TO-220|||3.0|g||||
|TO-3P|TO-3P|||5.5|g|**Advantages**|||
|TO-247|TO-247|||6.0|g||||
||||||||Easy to Mount||
||||||||Space Savings||
|**Symbol**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**||||High Power Density||
|(TJ= 25°C, Unless Otherwise Specified)<br>**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|C, Unless Otherwise Specified)<br>**Min.     Typ.     Max.**<br>VGS = 0V, ID= - 250μA<br>- 200<br>VDS = VGS, ID= - 250μA<br>- 2.0                    - 4.0     V<br>VGS =±15V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>VGS = -10V, ID= 0.5 • ID25, Note 1||**Min.     Typ.     Max.**<br>- 200<br>- 2.0                    - 4.0     V<br>±<br>- 25<br>-1.25<br>130|**Applications**<br>High-Side Switching<br>Push Pull Amplifiers<br>DC Choppers<br>Automatic Test Equipment<br>Current Regulators<br>Battery Charger Applications<br>**Min.     Typ.     Max.**<br>V<br>- 2.0                    - 4.0     V<br>±100<br>nA<br>- 25<br>μA<br>-1.25 mA<br>130 mΩ<br>~~—~~<br>|<br>~~|~~.<br>~~—~~<br>~~_~~:<br>~~_~~|||||



International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG 

DS100288B(01/13) 

© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA32P20T   IXTQ32P20T IXTP32P20T   IXTH32P20T** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|
|---|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.**|**Typ.**||**Max.**|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,   Note 1                    18|30||S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|14.5<br>565<br>105||nF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|32<br>15<br>57<br>12||ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|185<br>66<br>45||nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>TO-247 &TO-3P<br>|<br>0.50<br>0.21||0.42°C/W<br>°C/W<br>°C/W|
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>||||
|(TJ= 25°C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**IS**<br>VGS= 0V|||- 32     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|||-128     A|
|**VSD**<br>IF= - 32A, VGS= 0V,  Note 1|||-1.3     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= -16A, -di/dt = -100A/μs<br>VR= -100V, VGS= 0V||190<br>1.7<br>-17.8|ns<br>μC<br>A|



Note              1:  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA32P20T   IXTQ32P20T IXTP32P20T   IXTH32P20T** 

## **TO-263 Outline** 

## **TO-3P Outline** 

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**----- Start of picture text -----**<br>
Pins: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **TO-220 Outline** 

## **TO-247  Outline** 

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**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


- 1 = Gate 2 = Dra ~~i~~ n 3 = ~~S~~ ource 

© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA32P20T   IXTQ32P20T IXTP32P20T   IXTH32P20T** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>-35<br>V GS = -10V<br>       - 8V<br>-30<br>       - 7V<br>-25 - 6V<br>-20<br>-15<br>-10 - 5V<br>-5<br>- 4V<br>0<br>0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-120<br>VGS = -10V<br>       - 8V<br>-100<br>- 7V<br>-80<br>-60<br>- 6V<br>-40<br>-20<br>- 5V<br>0<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = -16A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC  Junction Temperature<br>-35 2.4<br>V GS = -10V<br>-30        - 7V 2.2 V GS = -10V<br>2.0<br>- 6V I D = - 32A<br>-25 1.8<br>-20 1.6 I  D  = -16A<br>- 5V 1.4<br>-15<br>1.2<br>-10 1.0<br>0.8<br>-5 - 4V<br>0.6<br>0 0.4<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = -16A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.4 -35<br>2.2 VGS = -10V  -30<br>2.0 TJ = 125ºC<br>-25<br>1.8<br>-20<br>1.6<br>-15<br>1.4<br>TJ = 25ºC -10<br>1.2<br>1.0 -5<br>0.8 0<br>0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTA32P20T   IXTQ32P20T IXTP32P20T   IXTH32P20T** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>-55 60<br>-50 TJ = - 40ºC<br>-45 50<br>-40<br>40 25ºC<br>-35<br>-30 TJ = 125ºC<br>-25 25ºC   - 40 º C  30 125ºC<br>-20<br>20<br>-15<br>-10<br>10<br>-5<br>0 0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-100 -10<br>-90 -9  VDS = -100V<br> I D = -16A<br>-80 -8<br> I G = -1mA<br>-70 -7<br>-60 -6<br>-50 -5<br>-40 -4<br>-30 TJ = 125 º C -3<br>TJ  = 25ºC<br>-20 -2<br>-10 -1<br>0 0<br>-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 0 20 40 60 80 100 120 140 160 180<br>VSD - Volts QG - NanoCoulombs<br> - Amperes  - Siemens<br>ID gf s<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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100,000<br>f = 1 MHz<br>C iss<br>10,000<br>1,000 C oss<br>100<br>Crss<br>10<br>0 -5 -10 -15 -20 -25 -30 -35 -40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
-1000<br>- 100 RDS(on) Limit 25µs<br>100µs<br>-10<br>1ms<br>- 1 10ms<br>TJ = 150ºC DC 100ms<br>T C  = 25ºC<br>Single Pulse<br>- 0.1<br>- 1 - 10 - 100 - 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA32P20T   IXTQ32P20T IXTP32P20T   IXTH32P20T** 

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**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature  Drain Current<br>16.0 16.0<br> RG = 1Ω , VGS = -10V  RG = 1Ω , VGS = -10V<br>15.5  VDS = -100V   15.5  VDS = -100V<br> - 64A < ID < - 32A   25ºC < TJ < 125ºC<br>15.0 15.0<br>14.5 14.5<br>14.0 14.0<br>13.5 13.5<br>13.0 13.0<br>25 35 45 55 65 75 85 95 105 115 125 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65<br>TJ - Degrees Centigrade ID - Amperes<br>t - Nanosecondsr t - Nanosecondsr<br>**----- End of picture text -----**<br>


**Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
160 90<br>140  t r td(on) - - - -  80<br> T J = 125ºC,  V GS = -10V<br>120  V DS  = -100V         70<br>100 60<br>I D = - 64A, - 32A<br>80 50<br>60 40<br>40 30<br>20 20<br>0 10<br>0 2 4 6 8 10 12 14 16 18<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times vs.<br> Drain Current<br>13.0 70<br> t f td(off) - - - -<br>12.5  RG = 10Ω, VGS = -10V 65<br> VDS = -100V<br>12.0 60<br>TJ = 25ºC<br>11.5 TJ = 125ºC 55<br>11.0 50<br>10.5 45<br>-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65<br>ID - Amperes<br> d(on)t<br> - Nanosecondsr<br>t<br> - Nanoseconds<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
15 70<br> t f t d(off) - - - -<br>14  R G  = 1Ω,  V GS  = -10V 65<br> V DS = -100V<br>13 60<br>I D = - 32A<br>12 55<br>I D = - 64A<br>11 50<br>10 45<br>9 40<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times vs.<br> Gate Resistance<br>140 300<br> t f td(off) - - - -<br>120 260<br> TJ = 125ºC,  VGS = -10V<br> VDS = -100V<br>100 I  D  = - 32A 220<br>80 180<br>I  D  = - 64A<br>60 140<br>40 100<br>20 60<br>0 20<br>0 2 4 6 8 10 12 14 16 18<br>RG - Ohms<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTA32P20T   IXTQ32P20T IXTP32P20T   IXTH32P20T** 

**Fig. 19. Maximum Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_32P20T(A6)10-14-10 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTP32P20T/power-mosfet-p-channel-200-v-32-a-013-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixtp32p20t/mosfet-32a-200v-300w-to220ab/dp/3930252)
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