# MOSFET, P-CH, 100V, 18A, TO-220

![Product image](https://novapart.co/image/farnell:3949104/)

**URL**: https://novapart.co/products/IXTP18P10T./mosfet-p-ch-100v-18a-to-220
**SKU**: IXTP18P10T.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9300
**Stock**: 10+
**Lead Time**: 298 days (indicative)

## Description

Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | TrenchP Series |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.12ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949104/)

## **TrenchP[TM] Power MOSFET** 

**IXTY18P10T IXTA18P10T IXTP18P10T** 

**V =     - 100V DSS I =     - 18A D25 R  120m  DS(on)** 

P-Channel Enhancement Mode Avalanche Rated 

**TO-252 (IXTY)** G S ~~2~~ D (Tab) **TO-263 (IXTA)** G S D (Tab) **TO-220 (IXTP)** G ~~SS~~ D S D (Tab) 

|**TO-263 (IXTA)**|**TO-263 (IXTA)**|**TO-263 (IXTA)**|**TO-263 (IXTA)**|**TO-263 (IXTA)**|**TO-263 (IXTA)**|
|---|---|---|---|---|---|
|**TO-263 (IXTA)**<br>G<br>D (Tab)<br>S<br>**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>- 100<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>- 100<br>V<br>~~gy~~||||||
|**VGSS**<br>**VGSM**<br>**ID25**<br>**IDM**<br>**IA**<br>**EAS**|Continuous<br>Transient<br>TC = 25C<br>TC = 25C, Pulse Width Limited by TJM<br>TC = 25C<br>TC = 25C|15<br>25<br>-18<br>- 60<br>-18<br>200|V<br>V<br>A<br>A<br>A<br>mJ|G<br>D S<br>**TO-220 (IXTP)**<br>D (Tab)<br>~~SSS~~||
|**PD**|TC = 25C|83|W|G  = Gate           D      =  Drain||
|**TJ**||-55 ... +150|C|S  = Source       Tab   =  Drain||
|**TJM**||150|C|||
|**Tstg**||-55 ... +150|C|||
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|**Features**||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|||
|**Md**|Mounting Torque (TO-220)                                   1.13 / 10             Nm/lb.in|Mounting Torque (TO-220)                                   1.13 / 10             Nm/lb.in||International Standard Packages|International Standard Packages|
|**Weight**<br>TO-263|TO-252<br>TO-263<br>TO-220|0.35<br>2.50<br>3.00|g<br>g<br>g|Avalanche Rated<br>Extended FBSOA<br>Fast Intrinsic Diode||



- International Standard Packages 

- Low RDS(ON) and QG 

## **Advantages** 

|(TJ= 25C, Unless Otherwise Specified)<br>**Min.     Typ.     Max.**<br>~~|~~|**Min.     Typ.     Max.**<br>~~|~~|**Min.     Typ.     Max.**|
|---|---|---|
|**BVDSS**<br>VGS = 0V, ID= - 250A<br>-100<br>~~|~~|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250A<br>- 2.5                      - 4.5      V<br>~~|~~|- 2.5                      - 4.5      V<br>~~|~~|- 2.5                      - 4.5      V|
|**IGSS**<br>VGS =15V, VDS= 0V<br>||50    nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>-100|- 3<br>-100<br>~~_~~|- 3A<br>-100A<br>~~_~~|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>120   m|120   m|120   m|



- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- High-Side Switching 

- Push Pull Amplifiers 

- DC Choppers 

- Automatic Test Equipment 

- Current Regulators 

- Battery Charger Applications 

DS99966D(8/17) 

© 2017 IXYS CORPORATION, All Rights Reserved 

## **IXTY18P10T     IXTA18P10T IXTP18P10T** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,  Note 1                    8|13|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|2100<br>185<br>80|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|19<br>26<br>44<br>22|ns<br>ns<br>ns<br>ns|
||||
|**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|39<br>17<br>9|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>|<br>0.50|1.5C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||-18      A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||- 72     A|
|**VSD**<br>IF= IS, VGS= 0V,  Note 1||-1.5     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= 0.5 • ID25, -di/dt = -100A/s<br>VR= - 50V, VGS= 0V|62<br>164<br>- 5.3|ns<br>nC<br>A|



Note    1:   Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXTY18P10T     IXTA18P10T IXTP18P10T** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>-18<br>V GS = -10V<br>-16         - 9V<br>        - 8V<br>-14<br>-12<br>- 7V<br>-10<br>- 6V<br>-8<br>-6<br>-4<br>- 5V<br>-2<br>0<br>0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>-70<br>V GS = -10V<br>-60<br>- 9V<br>-50<br>- 8V<br>-40<br>- 7V<br>-30<br>- 6V<br>-20<br>-10 - 5V<br>0<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = - 9A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C  Junction Temperature<br>-18 2.2<br>V GS = -10V<br>-16         - 9V 2.0 V GS = -10V<br>        - 8V<br>-14        - 7V   1.8<br>-12 1.6 I  D  = -18A<br>-10 - 6V 1.4 I  D  = - 9A<br>-8 1.2<br>-6 1.0<br>- 5V<br>-4 0.8<br>-2 0.6<br>0 0.4<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 9A Value vs.<br>Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature<br>2.4 -20<br>2.2 VGS = -10V  -18<br>TJ = 125 [o] C -16<br>2.0<br>-14<br>1.8<br>-12<br>1.6 -10<br>-8<br>1.4<br>TJ = 25 [o] C<br>-6<br>1.2<br>-4<br>1.0<br>-2<br>0.8 0<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved 

## **IXTY18P10T     IXTA18P10T IXTP18P10T** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>-24<br>-20<br>-16<br>TJ = 125 [o] C<br>          25 [o] C<br>-12         - 40 [o] C<br>-8<br>-4<br>0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [264 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>20<br>18 TJ = - 40ºC<br>16<br>14 25ºC<br>12<br>125ºC<br>10<br>8<br>6<br>4<br>2<br>0<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**==> picture [537 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-55 -10<br>-50 -9  V DS = - 50V<br>-45 -8  I  D = - 9A<br>-40  I G = -1mA<br>-7<br>-35<br>-6<br>-30<br>-5<br>-25<br>-4<br>-20 TJ = 125 [o] C<br>-3<br>-15<br>-10 TJ  = 25 [o] C -2<br>-5 -1<br>0 0<br>-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 0 5 10 15 20 25 30 35 40<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 - 100<br>f = 1 MHz<br>RDS(on) Limit<br>25μs<br>Ciss 100μs<br>1,000 - 10<br>1ms<br>C oss<br>100 - 1 10ms<br>Crss 100ms<br>TJ = 150 [o] C<br>TC = 25 [o] C<br>Single Pulse<br>10 - 0.1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 1 -10 -100 -1000<br>VDS - Volts VDS - Volts<br> - Volts<br>GS<br> - AmperesIS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTY18P10T     IXTA18P10T IXTP18P10T** 

**==> picture [538 x 639] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature  Drain Current<br>29 30<br>28 R G = 10Ω , V GS  = -10V 29 R G = 10Ω , V GS  = -10V<br>VDS = - 50V<br>27 VDS = - 50V   28<br>TJ = 25 [o] C<br>26 27<br>25 26<br>I D = -18A<br>24 25<br>23 24<br>TJ = 125 [o] C<br>22 I  D  = - 9A 23<br>21 22<br>20 21<br>25 35 45 55 65 75 85 95 105 115 125 -9 -10 -11 -12 -13 -14 -15 -16 -17 -18<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br> Gate Resistance Junction Temperature<br>30 80 25 54<br>28 t r td(on)  70 t f t d(off)<br>T J  = 125 [o] C,  V GS  = -10V 24 RG = 10Ω,  VGS = -10V 50<br>26 VDS = - 50V         60 VDS = - 50V<br>23 46<br>24 50<br>I D = -18A, - 9A<br>22 40 22 42<br>I D = -18A, - 9A<br>20 30<br>21 38<br>18 20<br>20 34<br>16 10<br>14 0 19 30<br>10 12 14 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Drain Current  Gate Resistance<br>27 54 65 110<br>26 t f t d(off)   51 60 t f t d(off)  100<br>RG = 10Ω, VGS = -10V 55 T J  = 125 [o] C,  V GS  = -10V 90<br>25 VDS = - 50V       48 VDS = - 50V<br>50 80<br>24 45 45 I D = - 9A, -18A 70<br>23 42 40 60<br>35 50<br>22 TJ = 25 [o] C 39<br>30 40<br>21 36<br>TJ = 125 [o] C 25 30<br>20 33 20 20<br>19 30 15 10<br>-9 -10 -11 -12 -13 -14 -15 -16 -17 -18 10 12 14 16 18 20 22 24 26 28 30 32 34<br>ID - Amperes RG - Ohms<br>t - Nanosecondsr  - Nanosecondsr<br>t<br>t<br> d(on) t<br> - Nanosecondsr  - Nanosecondsf  d(off)<br>t t<br> - Nanoseconds<br> - Nanoseconds<br>t - Nanosecondsf  d(off)t t - Nanosecondsf  d(off)t<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved 

## **IXTY18P10T     IXTA18P10T IXTP18P10T** 

**==> picture [524 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Maximum Transient Thermal Impedance<br>10<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


**==> picture [517 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-252 AA Outline TO-263 Outline TO-220 Outline<br>  4 b3 E  L3 “lar A  c2 r E  C2 rook A  E1 E oP A1A<br>i  L1  D1 |<br>D<br>L4  1      2      3  A2 A1 H 1 2 3  L2  A1 H 4 Q H1<br>1 ot t & I Li D D2<br>Pa in  L1 ~  L  b2 TH b Tl,  L3 t t 7 D1<br>|  e1  e1 e ii an  b2  L2 J  c | 1 - Gate2,4 - Drain WiirwT  0c = a e gig. 0.43 [11.0] a e ie) E1<br> 0 3 - Source<br>OPTIONAL 5.55MIN 0.34 [8.7] EJECTOR A2<br>6.50MIN  A2 0.66 [16.6] PIN L1 L<br>  4 1 - Gate 0.20 [5.0] 0.12 [3.0]<br>6.40 2,4 - Drain<br>i t} BOTTOMVIEW ” i} e  2.28 lgA||| aWo n 2.85MIN1.25MIN 3 - Source INCHES Gi 0.10 [2.5] MILLIMETER 1) rt 0.06 [1.6] L e A e1 | c ae 1 - Gate 3X b3X b2 4<br>LAND PATTERN RECOMMENDATION 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_18P10T(A1-810) 11-05-10-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtp18p10t/mosfet-p-ch-100v-18a-to-220/dp/3949104)
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