# MOSFET, N-CH, 150V, 150A, TO-220

![Product image](https://novapart.co/image/farnell:3949103/)

**URL**: https://novapart.co/products/IXTP150N15X4/mosfet-n-ch-150v-150a-to-220
**SKU**: IXTP150N15X4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.1000
**Stock**: 10+
**Lead Time**: 279 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X4-Class Series |
| Qualification | - |
| Power Dissipation | 480W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 0.0062ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949103/)

## **X4-Class Power MOSFET[TM]** 

N-Channel Enhancement Mode Avalanche Rated 

**V =   150V DSS I =   150A D25 R  7.2m  DS(on)** 

## **IXTP150N15X4 IXTH150N15X4** 

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D<br>G<br>TO-220<br>(IXTP)<br>S<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**|TJ = 25C to 175C|150|V|
|**VDGR**|TJ = 25C to 175C, RGS= 1M|150|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C|150|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|260|A|
|**IA**|TC = 25C|75|A|
|**EAS**|TC = 25C|1|J|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns|
|**PD**|TC = 25C|480|W|
|**TJ**||-55 ... +175|C|
|**TJM**||175|C|
|**Tstg**||-55 ... +175|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque<br>1.13 / 10         Nm/lb.in|1.13 / 10         Nm/lb.in||
|**Weight**|TO-220<br>3|3|g|
|TO-247|TO-247<br>6|6|g|



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G<br>D<br>S<br>D (Tab)<br>TO-247<br>(IXTH)<br>G<br>D S D (Tab)<br>G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>150|~~7~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5 4.5      V|4.5      V<br>~~|~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~<br>~~|~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 150C<br>500|10<br>500<br>~~|—~~|10A<br>500A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|6.2          7.2   m<br>~~|~~|6.2          7.2   m|



- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100904B(11/19) 

© 2019 IXYS CORPORATION, All Rights Reserved. 

**IXTP150N15X4 IXTH150N15X4** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**||**Max**||
|**gfs**<br>VDS= 10V, ID= 60A, Note 1                             70|120||S||
|**RGi**<br>Gate Input Resistance<br>|1.3||||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5500<br>900<br>4||pF<br>pF<br>pF||
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|660<br>2100||pF<br>pF||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)|23<br>5<br>60<br>6||ns<br>ns<br>ns<br>ns||
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|105<br>30<br>28||nC<br>nC<br>nC||
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21||0.31C/W<br> C/W<br> C/W||
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                               Characteristic Values**|||||
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**||**Max**|
|**IS**<br>VGS= 0V||||150     A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||||600     A|
|**VSD**<br>IF= 100A, VGS= 0V, Note 1||||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 75A, -di/dt = 100A/μs<br>VR= 75V||100<br>350<br>7||ns<br>nC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXTP150N15X4 IXTH150N15X4** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br>


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140 VGS = 10V<br>           8V<br>7V<br>120<br>100<br>80<br>6V<br>60<br>40<br>20<br>5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>500<br>VGS = 10V<br>450<br>9V<br>400<br>8V<br>350<br>300<br>250 7V<br>200<br>150<br>6V<br>100<br>50 5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 75A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 150 [o] C<br>Junction Temperature<br>3.0<br>140 VGS = 10V<br>           8V VGS = 10V<br>7V 2.6<br>120<br>2.2<br>100 6V I D = 150A<br>1.8<br>80<br>I D = 75A<br>1.4<br>60<br>40 5V 1.0<br>20 0.6<br>4V<br>0 0.2<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 V GS = 10V  1.2<br>BVDSS<br>3.5 1.1<br>TJ = 150 [o] C<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>1.5 TJ = 25 [o] C 0.7 V GS(th)<br>1.0 0.6<br>0.5 0.5<br>0 50 100 150 200 250 300 350 400 450 500 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved. 

## **IXTP150N15X4 IXTH150N15X4** 

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Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>180 160<br>160 140 VDS = 10V<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60 TJ = 150 [o] C<br>40           25 [o] C<br>40<br>- 40 [o] C<br>20 20<br>0 0<br>-50 -25 0 25 50 75 100 125 150 175 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>220 500<br>200 VDS = 10V T J  = - 40 [o] C 450<br>180 400<br>160<br>350<br>140<br>25 [o] C 300<br>120<br>250<br>100<br>150 [o] C 200<br>80<br>150<br>60<br>TJ = 150 [o] C<br>40 100 T J  = 25 [o] C<br>20 50<br>0 0<br>0 20 40 60 80 100 120 140 160 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9  VDS = 75V<br>8  I D = 75A 10,000<br> I G = 10mA  Ciss<br>7<br>6 1,000<br>5 Coss<br>4 100<br>3 Crss<br>2 10<br>1 f = 1 MHz<br>0 1<br>0 10 20 30 40 50 60 70 80 90 100 110 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTP150N15X4 IXTH150N15X4** 

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Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>8 1000<br>RDS(on) Limit<br>7<br>25μs<br>6 100<br>100μs<br>5<br>4 10<br>3 1ms<br>2 1  TJ = 175 [o] C 10ms<br>DC<br>1  TC = 25 [o] C<br> Single Pulse<br>0 0.1<br>0 20 40 60 80 100 120 140 1 10 100 1,000<br>VDS - Volts Fig. 15. Maximum Transient Thermal Impedance VDS - Volts<br>1<br>Fig. 15. Maximum Transient Thermal Impedance<br>0.5 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved. 

IXYS REF: T_150N15X4 (17) 6-20-18 

**IXTP150N15X4 IXTH150N15X4** 

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTP150N15X4 IXTH150N15X4** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2019 IXYS CORPORATION, All Rights Reserved. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtp150n15x4/mosfet-n-ch-150v-150a-to-220/dp/3949103)
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