# Power MOSFET, LINEAR L2™, N Channel, 500 V, 53 A, 0.1 ohm, SOT-227, Module

![Product image](https://novapart.co/image/farnell:1829753/)

**URL**: https://novapart.co/products/IXTN60N50L2/power-mosfet-linear-l2tm-n-channel-500-v-53-a-01
**SKU**: IXTN60N50L2
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €33.0600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Power Dissipation | 735W |
| Transistor Mounting | Module |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 735W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.1ohm |
| Transistor Case Style | SOT-227 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 53A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1829753/)

## Preliminary Technical Information 

## **Linear L2[TM] Power** 

## **MOSFET** 

N-Channel Enhancement Mode Extended FBSOA 

## **IXTN60N50L2** 

**V =    500V DSS I =    53A D25 R ≤ 100m Ω DS(on)** 

**miniBLOC, SOT-227 E153432** 

|||||||S|
|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**||**Maximum Ratings**||G||
|**VDSS**|TJ = 25°C to 150°C||500|V|||
|**VDGR**|TJ = 25°C to 150°C, R|C, RGS= 1MΩ|500|V|||
|**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~a~~||||||D<br>S|
|**ID25**|TC = 25°C||53|A|||
|**IDM**|TC = 25°C, pulse width limited by TJM||150|A|G = Gate|D = Drain|
||||||S =  Source||
|**IA**|TC = 25°C||60|A|||
|**EAS**|TC = 25°C||3|J|Either source terminal S can be used as the||
|**PD**|TC = 25°C||735|W|source terminal or the Kelvin source (gate<br>return) terminal.|source terminal or the Kelvin source (gate|
|**TJ**|||-55 ... +150|°C|||
|**TJM**|||150|°C|||
|**Tstg**|||-55 ... +150|°C|**Features**||
|**TL**<br>**TSOLD**|1.6mm (0.062 in.) from case for 10s<br>Plastic body for 10s||300<br>260|°C<br>°C|•Designed for linear operation<br>•International standard package<br>•Molding epoxy meets UL94 V-0||
|**VISOL**|50/60 Hz, RMS|t = 1 minute|2500|V~|flammability classification||
||I**ISOL** ≤1mA|t = 1 second|3000<br>V~|V~|•miniBLOC with Aluminium nitride||
|**Md**|Mounting  torque|1.5/13           Nm/lb.in.|1.5/13           Nm/lb.in.||isolation||
||Terminal Connection torque|Terminal Connection torque<br>1.3/11.5          Nm/lb.in.|1.3/11.5          Nm/lb.in.||**Applications**||
|**Weight**||30                     g|30                     g|30                     g|• Programmable loads|Programmable loads|



Either source terminal S can be used as the source terminal or the Kelvin source (gate return) terminal. 

- Designed for linear operation 

- International standard package 

- Molding epoxy meets UL94 V-0 flammability classification 

- miniBLOC with Aluminium nitride isolation 

- Programmable loads 

- Current regulators 

- DC-DC converters 

- Battery chargers 

- DC choppers 

- Temperature and lighting controls 

|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>500<br>~~|~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5                  4.5      V<br>~~|~~|2.5                  4.5      V<br>~~||~~<br>~~||~~|2.5                  4.5      V|
|**IGSS**<br>VGS =±30V, VDS= 0V<br>±<br>~~|~~|±<br>~~| |~~<br>|||±200    nA|
|**IDSS**<br>VDS =  VDSS<br>50<br>VGS =  0V TJ= 125°C<br>5   mA|50<br>5   mA<br>_|50μA<br>5   mA|
|**RDS(on)**<br>VGS = 10V, ID= 30A  Note 1<br>100   m|100   m<br>|||100   mΩ|



## **Advantages** 

- Easy to mount 

- Space savings 

- High power density 

DS100086(12/08) 

© 2008 IXYS CORPORATION,  All rights reserved 

## **IXTN60N50L2** 

|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>  <br>|
|---|---|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.**<br>**gfs**<br>VDS= 10V, ID= 30A,  Note 1                            18||**Typ.**<br>25||**Max.**<br>32<br>S|
|**Ciss**<br>**Coss**<br>**C**|<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>|24<br>1325<br>172||nF<br>pF<br>pF|
|**rss**<br> <br>**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 15V, VDS= 0.5 • VDSS, ID= 30A<br>RG= 0.5Ω (External)||<br> 40<br>40<br>165<br>38||ns<br>ns<br>ns<br>ns|
||||||
|**Qg(on)**<br>610<br>nC<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 30A<br>130<br>nC<br>**Qgd**<br>365<br>nC<br>**RthJC**<br>0.17°C/W<br>**RthCS**<br>0.05<br>°C/W<br>**Safe Operating Area Specification**|||||
|**Symbol**<br>**Test Conditions**<br>**Min.        Typ.       Max.**<br>**SOA**<br>VDS= 400V, ID= 0.9A, TC= 75°C, tp = 3s 360<br>W<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>  <br>|||||
|(TJ= 25°C, unless otherwise specified)<br>**Min.**|||**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||||60     A|
|**ISM**<br>Repetitive, pulse width limited by TJM||||240     A|
|**VSD**<br>IF= IS, VGS= 0V,  Note 1||||1.5    V|
|**trr**<br> <br>**IRM**<br> <br>**QRM**<br> <br>IF= 60A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V|||980<br>73<br>35.8|ns<br>A<br>μC|



**==> picture [162 x 341] intentionally omitted <==**

**----- Start of picture text -----**<br>
 SOT-227B (IXTN) Outline<br>(M4 screws (4x) supplied)<br>**----- End of picture text -----**<br>


Note 1:  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTN60N50L2** 

**Fig. 1. Output Characteristics @ 25ºC** 

**Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [523 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 160<br>55 VGS = 20V VGS = 20V<br>         14V 140          14V<br>50          12V          12V<br>45          10V 9V 120<br>10V<br>40<br>35 8V 100<br>9V<br>30 80<br>25<br>7V 60<br>20 8V<br>15 40<br>10 6V 7V<br>20<br>5<br>5V 6V<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 125ºC** 

**==> picture [252 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>55 VGS = 20V<br>         12V<br>50          10V<br>          9V<br>45<br>40 8V<br>35<br>30<br>7V<br>25<br>20<br>15<br>6V<br>10<br>5 5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 30A Value<br>vs. Drain Current<br>2.8<br>2.6 VGS = 10V<br>           20V  - - - -<br>2.4 T J = 125ºC<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4 TJ = 25ºC<br>1.2<br>1.0<br>0.8<br>0 20 40 60 80 100 120 140 160<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature** 

**==> picture [253 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8<br>2.6 V GS = 10V<br>2.4<br>2.2<br>2.0 I  D  = 60A<br>1.8<br>1.6 I D = 30A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Maximum Drain Current vs. Case Temperature** 

**==> picture [251 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

IXYS REF: T_60N50L2(9R)01-20-09-C 

**IXTN60N50L2** 

**==> picture [524 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>100 55<br>90 50<br>45<br>80<br>40 TJ = - 40ºC<br>70<br>25ºC<br>35 125ºC<br>6050           25TJ = 125ºCºC 30<br>        - 40ºC 25<br>40<br>20<br>30<br>15<br>20 10<br>10 5<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10 20 30 40 50 60 70 80 90 100 110<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode Fig. 10. Gate Charge<br>16<br>200<br>180 14  VDS = 250V<br> I D = 30A<br>160 12  I  G  = 10mA<br>140<br>10<br>120<br>100 8<br>80 6<br>60 TJ = 125ºC<br>4<br>40 TJ  = 25ºC<br>2<br>20<br>0 0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 100 200 300 400 500 600 700 800 900<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [252 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>Coss<br>1,000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [252 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

## **IXTN60N50L2** 

**Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC** 

## **Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC** 

**==> picture [530 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000.0 1,000.0<br>RDS(on) Limit RDS(on) Limit<br>100.0 100.0<br>25µs<br>100µs 25µs<br>100µs<br>1ms<br>10.0 10.0<br>1ms<br>10ms<br>10ms<br>100ms<br>100ms<br>1.0 TJ = 150ºC DC 1.0 TJ = 150ºC DC<br>TC = 25ºC TC = 75ºC<br>Single Pulse  Single Pulse<br>0.1 0.1<br>10 100 1000 10 100 1000<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

IXYS REF: T_60N50L2(9R)01-20-09-C 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTN60N50L2/power-mosfet-linear-l2tm-n-channel-500-v-53-a-01)
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- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixtn60n50l2/mosfet-n-ch-500v-53a-sot-277b/dp/1829753)
---

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