# MOSFET, N-CH, 250V, 82A, TO-264

![Product image](https://novapart.co/image/farnell:3949100/)

**URL**: https://novapart.co/products/IXTK82N25P./mosfet-n-ch-250v-82a-to-264
**SKU**: IXTK82N25P.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.9900
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:82A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V 03

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar Series |
| Qualification | - |
| Power Dissipation | 500W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 82A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949100/)

## **IXTT82N25P IXTQ82N25P IXTK82N25P** 

## **Polar[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|250|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|250|V|
|**VGSS**|Continuous|20|V|
|**VGSM**<br>~~oe~~|Transient<br>~~oe~~|30<br>~~oe~~|V<br>~~oe~~|
|**ID25**|TC = 25C|82|A|
|**ILRMS**|Lead Current Limit                                                            75                A|Lead Current Limit                                                            75                A|Lead Current Limit                                                            75                A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|200|A|
|**PD**|TC = 25C|500|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-3P&TO-264)<br>1.13 / 10|1.13 / 10|Nm/lb.in|
|**Weight**|TO-268|4.0|g|
|TO-3P|TO-3P|5.5                   g|5.5                   g|
||TO-264<br>10.0                   g|10.0                   g|10.0                   g|



**V =   250V DSS I =   82A D25 R  38m  DS(on)** 

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**----- Start of picture text -----**<br>
TO-268 (IXTT)<br>G<br>S<br>D (Tab)<br>TO-3P( IXTQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-264 (IXTK)<br>G<br>D<br>S<br>D (Tab)<br>G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- Fast Intrinsic Rectifier 

- Avalanche Rated 

- Low RDS(ON) and QG  Low Package Inductance 

|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>250|~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5                       5.0    V|2.5                       5.0    V<br>~~||~~<br>~~|~~|2.5                       5.0    V|
|**IGSS**<br>VGS =20V, VDS= 0V|<br>~~~~~|100  nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>250|25<br>250<br>~~~~~|25A<br>250A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|38  m<br>~~|~~|38  m|



## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- Laser Drivers 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS99121F(7/14) 

© 2014 IXYS All Rights Reserved 

**IXTT82N25P  IXTQ82N25P IXTK82N25P** 

|**Symbol**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**||
|---|---|---|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**||
|**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1                    30                52                   S|, Note 1                    30                52                   S<br>~~| |~~|||, Note 1                    30                52                   S|, Note 1                    30                52                   S|
|**Ciss**||4800|4800|||pF|
|**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|900|900|||pF|
|**Crss**||210|210|||pF|
|**td(on)**|**Resistive Switching Times**|29|29||ns|ns|
|**tr**<br>**td(off)**<br>**tf**|20<br>78<br>22<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1 (External)||20<br>78<br>22|||ns<br>ns<br>ns|
|**Qg(on)**||142|142|||nC|
|**Qgs**|32<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||32|||nC|
|**Qgd**||74|74|||nC|
|**RthJC**||0.25|0.25|0.25|0.25C/W||
|**RthCS**|TO-3P                                                                             0.21|TO-3P                                                                             0.21|TO-3P                                                                             0.21|TO-3P                                                                             0.21|TO-3P                                                                             0.21C/W||
|TO-264                                                                        0.15|TO-264                                                                        0.15|TO-264                                                                        0.15|TO-264                                                                        0.15|TO-264                                                                        0.15|TO-264                                                                        0.15C/W||
|**Source-Drain Diode**|||||||
|**Symbol**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**||**Test Conditions                                               Characteristic Values**|||
|(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**||
|**IS**|VGS= 0V, Note1||82       A|82       A|82       A|82       A|
|**ISM**<br>**VSD**|Repetitive, pulse Width Limited by TJM<br>IF= IS, VGS= 0V, Note 1||328       A<br>1.4       V|328       A<br>1.4       V|328       A<br>1.4       V|328       A<br>1.4       V|
|**trr**<br>**QRM**|2<br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V|200<br>2|200<br>2||ns<br>C||



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||
|||||||||||||||||||||||||
||||||||||||||~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|
|||||||||||||||||||||||||
|~~t~~<br>e~~n~~|||||7<br> ~~+~~b||||||||4<br>1||||||'|||||
|||||||||||||||||||||||||
|||||||||||||||||||||||||
||||||||||||||~~1~~<br>i||~~_¢—~~<br>¥|||||||||
|||||||||||||||||||||||||
|||||||||||||||||||||||||
||Terminals:||||||||||1 - Gate|||||||2,4  - Drain|||2,4  - Drain|||
||||||||||||3 - Source|||||||||||||



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TO-3P Outline<br>**----- End of picture text -----**<br>


## **TO-264 AA Outline** 

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Terminals: 1 - Gate<br>2 - Drain<br>Foq—4___Ihop e- 3 - Source<br>4 - Drain<br>Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.82 5.13 .190 .202<br>A1 2.54 2.89 .100 .114<br>A2 2.00 2.10 .079 .083<br>b 1.12 1.42 .044 .056<br>b1 2.39 2.69 .094 .106<br>b2 2.90 3.09 .114 .122<br>c 0.53 0.83 .021 .033<br>D 25.91 26.16 1.020 1.030<br>E 19.81 19.96 .780 .786<br>e 5.46 BSC .215 BSC<br>J 0.00 0.25 .000 .010<br>K 0.00 0.25 .000 .010<br>L 20.32 20.83 .800 .820<br>L1 2.29 2.59 .090 .102<br>P 3.17 3.66 .125 .144<br>Q 6.07 6.27 .239 .247<br>Q1 8.38 8.69 .330 .342<br>R 3.81 4.32 .150 .170<br>R1 1.78 2.29 .070 .090<br>S 6.04 6.30 .238 .248<br>T 1.57 1.83 .062 .072<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTT82N25P  IXTQ82N25P IXTK82N25P** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>90<br>V GS = 10V<br>80          9V<br>70 8V<br>60<br>50<br>7V<br>40<br>30<br>20<br>6V<br>10<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>200 V GS = 10V<br>180<br>160<br>9V<br>140<br>120<br>100 8V<br>80<br>60<br>40 7V<br>20<br>0 6V<br>0 5 10 15 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 41A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>90 3.0<br>80 V          9V   GS = 10V V GS = 10V<br>2.6<br>70 8V<br>2.2 I D = 82A<br>60<br>50 7V 1.8<br>I D = 41A<br>40 1.4<br>30<br>6V 1.0<br>20<br>0.6<br>10 5V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 41A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.8 80<br>3.4 VGS = 10V  70 External Lead Current Limit<br>3.0 60<br>TJ = 125ºC<br>2.6 50<br>2.2 40<br>1.8 30<br>1.4 TJ = 25 º C 20<br>1.0 10<br>0.6 0<br>0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2014 IXYS All Rights Reserved 

## **IXTT82N25P  IXTQ82N25P IXTK82N25P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>180 80<br>T J = - 40ºC<br>160 70<br>140<br>60<br>25ºC<br>120<br>50<br>100<br>40 125ºC<br>80<br>30<br>60<br>TJ = 125ºC<br>20<br>40           25ºC<br>        - 40ºC<br>20 10<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 20 40 60 80 100 120 140 160 180<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60 TJ = 125ºC<br>40 TJ  = 25ºC<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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Fig. 10. Gate Charge<br>10<br>9  VDS = 125V<br> I D = 41A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 1000<br>Ciss<br>100 RDS(on) Limit 25µs<br>Coss 100µs<br>1,000<br>1ms<br>10<br>DC 10ms<br>Crss TJ = 150ºC<br>TC = 25ºC<br>f = 1 MHz  Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTT82N25P  IXTQ82N25P IXTK82N25P** 

**Fig. 13. Maximum Transient Thermal Impedance** 

1 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2014 IXYS All Rights Reserved 

IXYS REF: T_82N25P (7J) 7-16-14-B 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtk82n25p/mosfet-n-ch-250v-82a-to-264/dp/3949100)
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