# Power MOSFET, P Channel, 100 V, 210 A, 7500 µohm, TO-264, Through Hole

![Product image](https://novapart.co/image/farnell:3930057/)

**URL**: https://novapart.co/products/IXTK210P10T/power-mosfet-p-channel-100-v-210-a-7500-ohm-to-264
**SKU**: IXTK210P10T
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €16.5800
**Stock**: 10+
**Lead Time**: 267 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.04kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 210A |
| Drain Source On State Resistance | 7500µohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930057/)

## Preliminary Technical Information 

## **TrenchP[TM] Power MOSFETs** 

P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

## **IXTK210P10T IXTX210P10T** 

**V =     - 100V DSS I =     - 210A D25 R ≤ 7.5m Ω DS(on) t ≤ 200ns rr** 

## **TO-264 (IXTK)** 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oo~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oo~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oo~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oo~~|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|-100|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|-100|V|
|**VGSS**|Continuous|±15|V|
|**VGSM**|Transient|±25|V|
|**ID25**|TC = 25°C (ChipCapability)|- 210|A|
|**ILRMS**|Lead Current Limit, RMS|-160|A|
|**IDM**|TC = 25°C,  Pulse Width Limited by TJM|- 800|A|
|**IA**|TC = 25°C|-100|A|
|**EAS**|TC = 25°C|3|J|
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns|
|**PD**|TC = 25°C|1040|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**<br>**TSOLD**|1.6mm (0.062 in.) from Case for 10s<br>Plastic Body for 10s|300<br>260|°C<br>°C|
|**Md**|Mounting Torque  (TO-264)|1.13/10|Nm/lb.in.|
|**FC**|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.|
|**Weight**|TO-264|10|g|
||PLUS247|6|6g|



**==> picture [113 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D<br>S<br>Tab<br>PLUS247 (IXTX)<br>G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

International Standard Packages High Current Handling Capability Avalanche Rated Extended FBSOA Fast Intrinsic Recitifier Low RDS(ON) and QG 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

|**Symbol**<br>(T= 25°C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**<br>~~_~~|**Min.        Typ.        Max.**<br>~~_~~|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**<br>~~_~~|**Min.        Typ.        Max.**<br>~~_~~|
|**BVDSS**<br>VGS = 0V, ID= - 250μA                                   -100|~~_~~|V<br>~~_~~|
|**VGS(th)**<br>VDS = VGS, ID= - 250μA                            - 2.5                     - 4.5    V|= - 250μA                            - 2.5                     - 4.5    V<br>~~—~~|= - 250μA                            - 2.5                     - 4.5    V<br>~~—~~|
|**IGSS**<br>VGS =±15V, VDS= 0V|±<br>~~—~~<br>~~—~~|±200  nA<br>~~—~~|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>- 300   μA<br>~~|~~|- 25<br>- 300   μA<br>~~—~~<br>~~pf:~~<br>~~|~~|- 25<br>μA<br>- 300   μA|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>~~|~~|7.5  m<br>~~pf:~~<br>~~|~~|7.5  mΩ|



, High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 

DS100397A(01/13) 

© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXTK210P10T IXTX210P10T** 

|**gfs**<br>VDS= -10V, ID= - 60A, Note 1                         90            150<br>~~—te~~|= - 60A, Note 1                         90            150<br>~~—te~~|= - 60A, Note 1                         90            150<br>~~—te~~|
|---|---|---|
|**C**<br>69.5<br>~~—te~~|69.5<br>~~—te~~||
|**Ciss**<br>69.5<br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br>4070<br>**Crss**<br>1100<br>~~—te~~|69.5<br>4070<br>1100<br>~~—te~~|nF<br>pF<br>pF|
|**td(on)**<br> <br>**t**r<br>98<br>**td(off)**<br>165<br>**t**f<br>55<br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)<br>~~—te~~|90<br>98<br>165<br>55<br>~~—te~~||
|**Qg(on)**<br>740<br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>200<br>**Qgd**<br>155|740<br>200<br>155<br>~~_~~||
|**RthJC**<br>0.12<br>**RthCS**<br>0.15|0.12<br>0.15<br>~~_~~||



## **Source-Drain Diode** 

|(TJ= 25°C Unless Otherwise Specified)**Min.       Typ.        Max.**|**Min.       Typ.        Max.**|
|---|---|
|**IS**<br>VGS= 0V|- 210     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>**V**<br>I= -100A, V= 0V, Note 1|- 840     A<br>-1.4     V|
|**VSD**<br>IF= -100A, VGS= 0V, Note 1<br>**trr**<br>200   ns<br>**QRM**<br>930<br>**IRM**12.4<br>IF= -105A, -di/dt = -100A/μs<br>VR= -100V, VGS= 0V|-1.4     V<br>200   ns<br>930<br>12.4|



**TO-264 AA Outline** 

|||Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>4 - Drain|
|---|---|---|
|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|A<br>A1<br>A2|4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10|.190<br>.202<br>.100<br>.114<br>.079<br>.083|
|b<br>b1<br>b2|1.12<br>1.42<br>2.39<br>2.69<br>2.90<br>3.09|.044<br>.056<br>.094<br>.106<br>.114<br>.122|
|c|0.53<br>0.83|.021<br>.033|
|D<br>25.91|25.91<br>26.16|1.020<br>1.030|
|E<br>19.81<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.786<br>.215 BSC|
|J|0.00<br>0.25|.000<br>.010|
|K|0.00<br>0.25|.000<br>.010|
|L<br>20.32<br>L1|20.32<br>20.83<br>2.29<br>2.59|.800<br>.820<br>.090<br>.102|
|P|3.17<br>3.66|.125<br>.144|
|Q<br>Q1|6.07<br>6.27<br>8.38<br>8.69|.239<br>.247<br>.330<br>.342|
|R<br>R1|3.81<br>4.32<br>1.78<br>2.29|.150<br>.170<br>.070<br>.090|
|S|6.04<br>6.30|.238<br>.248|
|T|1.57<br>1.83|.062<br>.072|



## **PLUS247[TM] Outline** 

Note      1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>D<br>E|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>L<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTK210P10T IXTX210P10T** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>-220<br>V GS = -10V<br>-200           - 8V<br>          - 7V<br>-180<br>-160<br>-140 - 6V<br>-120<br>-100<br>-80 - 5V<br>-60<br>-40<br>-20<br>- 4V<br>0<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-400<br>-350 VGS = -10V  - 7V<br>-300<br>- 6V<br>-250<br>-200<br>-150<br>-100<br>- 5V<br>-50<br>- 4V<br>0<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = -105A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC  Junction Temperature<br>-220 2.2<br>-200 V GS = -10V - 8V 2.0 V GS = -10V 10V<br>-180 - 7V<br>1.8<br>-160<br>-140 - 6V 1.6 I  D = - 210A 210A<br>-120 1.4 I  D = -105A 105A<br>-100 1.2<br>- 5V<br>-80<br>1.0<br>-60<br>0.8<br>-40<br>-20 - 4V 0.6<br>0 0.4<br>0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = -105A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.0 -180<br>V GS  = -10V  -160<br>1.8 External Lead Current Limit<br>-140<br>1.6 T J = 125ºC -120<br>-100<br>1.4<br>-80<br>1.2 -60<br>TJ = 25ºC -40<br>1.0<br>-20<br>0.8 0<br>0 -50 -100 -150 -200 -250 -300 -350 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - AmperesID  - NormalizedDS(on)DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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2.2<br>2.0 V GS = -10V 10V<br>1.8<br>1.6 I  D = - 210A 210A<br>1.4 I  D = -105A 105A<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - NormalizedDS(on)DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXTK210P10T IXTX210P10T** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>-300 300<br>TJ = - 40ºC<br>-250 250<br>-200 200 25ºC<br>-150 150 125ºC<br>T J = 125ºC<br>          25ºC<br>-100         - 40ºC  100<br>-50 50<br>0 0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -50 -100 -150 -200 -250 -300<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-350 -10<br>-9  VDS = - 50V<br>-300  I  D  = -105A<br>-8<br> I G = -1mA<br>-250 -7<br>-6<br>-200<br>-5<br>-150<br>-4<br>-100 T J = 125ºC -3<br>T J   = 25ºC -2<br>-50<br>-1<br>0 0<br>-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 100 200 300 400 500 600 700<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br>f s<br> - Amperes g<br>ID<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [527 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000 -1,000<br>RDS(on) Limit 100µs<br>f = 1 MHz  Ciss<br>1ms<br>-100<br>External Lead Current Limit<br>10,000<br>10ms<br>C oss -10<br>TJ = 150ºC 100ms<br>T C  = 25ºC DC<br>Crss Single Pulse<br>1,000 -1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -1 -10 -100<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTK210P10T IXTX210P10T** 

**==> picture [261 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>120<br> R G = 1Ω, V GS = -10V<br> VDS = - 50V<br>110<br>I D = -100A<br>100<br>90 I D = - 50A<br>80<br>70<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


**==> picture [268 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 15. Resistive Turn-on Switching Times vs.<br> Gate Resistance<br>350 700<br> t f td(off) - - - -<br>300 600<br> TJ = 125ºC,  VGS = -10V<br> VDS = - 50V<br>250 I  D  = -100A 500<br>200 400<br>150 300<br>100 I D = - 50A 200<br>50 100<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


## **Fig. 17. Resistive Turn-off Switching Times vs. Drain Current** 

**==> picture [255 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 300<br> t f td(off) - - - -<br>80  RG = 1Ω,  VGS = -10V 260<br> VDS = - 50V<br>TJ = 125ºC<br>70 220<br>60 180<br>TJ = 25ºC<br>50 140<br>40 100<br>-50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100<br>ID - Amperes<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**==> picture [260 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 14. Resistive Turn-on Rise Time vs.<br> Drain Current<br>120<br> RG = 1Ω, VGS = -10V<br> VDS = - 50V<br>110<br>T J  = 125ºC<br>100<br>TJ = 25ºC<br>90<br>80<br>-50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100<br>ID - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


**==> picture [184 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 16. Resistive Turn-off Switching Times vs.<br> Junction Temperature<br>**----- End of picture text -----**<br>


**==> picture [257 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 320<br>85  t f t d(off) - - - -  300<br>80  R G = 1Ω,  V GS = -10V 280<br> VDS = - 50V<br>75 260<br>70 I D = - 50A 240<br>65 220<br>60 200<br>55 I  D = -100A 180<br>50 160<br>45 140<br>40 120<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times vs.<br> Gate Resistance<br>500 1000<br> t f td(off) - - - -<br>400  TJ = 125ºC,  VGS = -10V 800<br> VDS = - 50V<br>300 I D = - 50A 600<br>I  D  = -100A<br>200 400<br>100 200<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> - Nanosecondsf  d(off)t<br>t<br> - Nanoseconds<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

**IXTK210P10T IXTX210P10T** 

**==> picture [538 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.0001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_210P10T(A9) 10-18-11 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTK210P10T/power-mosfet-p-channel-100-v-210-a-7500-ohm-to-264)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixtk210p10t/mosfet-210a-100v-1-04kw-to-264/dp/3930057)
---

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