# Power MOSFET, P Channel, 200 V, 120 A, 0.03 ohm, TO-264, Through Hole

![Product image](https://novapart.co/image/farnell:3930250/)

**URL**: https://novapart.co/products/IXTK120P20T/power-mosfet-p-channel-200-v-120-a-003-ohm-to-264
**SKU**: IXTK120P20T
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €16.4300
**Stock**: 200+
**Lead Time**: 267 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.04kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 0.03ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930250/)

## **TrenchP[TM] Power MOSFETs** 

P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

## **IXTK120P20T IXTX120P20T** 

**V =     - 200V DSS I =     - 120A D25 R ≤ 30m Ω DS(on) t ≤ 300ns rr** 

## **TO-264 (IXTK)** 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oe~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oe~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oe~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oe~~|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|- 200|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|- 200|V|
|**VGSS**|Continuous|±15|V|
|**VGSM**|Transient|±25|V|
|**ID25**|TC = 25°C|-120|A|
|**IDM**|TC = 25°C,  Pulse Width Limited by TJM|- 400|A|
|**IA**|TC = 25°C|-100|A|
|**EAS**|TC = 25°C|3|J|
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns|
|**PD**|TC = 25°C|1040|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering                     300<br>1.6 mm (0.062in.) from Case for 10s                               260                    °C|Maximum Lead Temperature for Soldering                     300<br>1.6 mm (0.062in.) from Case for 10s                               260                    °C|°C<br>1.6 mm (0.062in.) from Case for 10s                               260                    °C|
|**Md**|Mounting Torque  (TO-264)|1.13/10|Nm/lb.in.|
|**FC**|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.|
|**Weight**|TO-264|10|g|
||PLUS247|6|6g|



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G<br>D<br>S<br>Tab<br>PLUS247 (IXTX)<br>G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Recitifier Low RDS(ON) and QG 

## **Advantages** 

|**Symbol**<br>(T= 25°C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250μA                                   - 200|~~|~~<br>~~aa~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250μA                            - 2.5                     - 4.5    V|= - 250μA                            - 2.5                     - 4.5    V<br>~~aa~~|= - 250μA                            - 2.5                     - 4.5    V|
|**IGSS**<br>VGS =±15V, VDS= 0V|±<br>~~aa~~<br>~~rT~~|±200  nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>- 300   μA|- 25<br>- 300   μA<br>~~Te~~|- 25<br>μA<br>- 300   μA|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1|30  m<br>~~Te~~<br>~~a~~|30  mΩ|



Easy to Mount Space Savings High Power Density 

## **Applications** 

High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 

DS100401B(5/13) 

© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXTK120P20T IXTX120P20T** 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|TO-264 AA Outline|
|(T|gfs|J = 25°C Unless Otherwise Specified)                          VDS = -10V, ID = - 60A, Note 1                         85            145|Min.        Typ.        Max.|S|TT|BP.|[IF]|in|
|Pe|WSS|
|Ciss|73|nF|an|Po|
|Coss|VGS = 0V, VDS = - 25V, f = 1MHz|2550|pF|
|lm?|||123|feu|
|Crss|480|pF|
|t|90|ns|ThtL|AL|JL|
|d(on)|
|Resistive Switching Times|
|t|85|ns|LM|||
|tr|VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|200|ns|b1|be|Sealant|©|1 - Gate|
|d(off)|;|acs|#P1|
|t|RG  = 1Ω (External)|50|ns|:|BACK|SOE|2,4 - Drain3 - Source|
|f|
|Q|740|nC|
|g(on)||_ INCHES|——|_MILLIMETERS|
|Qgs|VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|220|nC|[siBOL|_||
|||A||aR185|||a209|||4.70|||5.31|||
|Qgd|120|nC|[i|||102|||118|[2.59|||3.00 _||
|RthJC|0.12 °C/W|
|RthCS|0.15|_|°C/W|| ob|| 037 ||055 ||0.94 ||1.40 ||

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## **Source-Drain Diode** 

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|||||
|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|
|(TJ = 25°C Unless Otherwise Specified)|Min.       Typ.        Max.|
|IS|VGS = 0V|-120     A|
|ISM|Repetitive, Pulse Width Limited by TJM|- 480     A|
|VSD|IF = -100A, VGS = 0V, Note 1|-1.4     V|
|tQrrRM|IF = - 60A, -di/dt = -100A/μs|3.3                           300   nsμC|
|IRM|VR = -100V, VGS = 0V|25.6|A|

**----- End of picture text -----**<br>


## **PLUS247[TM] Outline** 

Note              1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

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Terminals: 1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and  Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTK120P20T IXTX120P20T** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-120 -300<br>VGS = -10V V GS = -10V<br>       - 7V         - 7V<br>-100        - 6V    -250<br>- 6V<br>-80 -200<br>-60 -150<br>- 5V<br>-40 -100<br>-20 -50 - 5V<br>- 4V<br>0 0<br>0 -0.5 -1 -1.5 -2 -2.5 -3 0 -5 -10 -15 -20<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125ºC<br>-120<br>VGS = -10V<br>       - 7V<br>-100        - 6V<br>-80 - 5V<br>-60<br>-40<br>-20<br>- 4V<br>0<br>0 -1 -2 -3 -4 -5 -6<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = - 60A Value vs.<br>Drain Current<br>2.2<br>VGS = -10V<br>2.0<br>1.8 TJ = 125ºC<br>1.6<br>1.4<br>1.2<br>T J = 25ºC<br>1.0<br>0.8<br>0 -40 -80 -120 -160 -200 -240 -280<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = - 60A Value vs. Junction Temperature** 

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2.2<br>2.0 V GS = -10V<br>1.8<br>I D = -120A<br>1.6 I D = - 60A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>-140<br>-120<br>-100<br>-80<br>-60<br>-40<br>-20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXTK120P20T IXTX120P20T** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>-200 300<br>-180 TJ = - 40ºC<br>250<br>-160<br>25ºC<br>-140<br>200<br>-120<br>125ºC<br>-100 150<br>T J = 125ºC<br>-80<br>          25ºC<br>        - 40ºC  100<br>-60<br>-40<br>50<br>-20<br>0 0<br>-3.4 -3.8 -4.2 -4.6 -5 -5.4 -5.8 0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -220<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-300 -10<br>-9  V DS = -100V<br>-250 -8  I D = - 60A<br> I G = -1mA<br>-7<br>-200<br>-6<br>-150 -5<br>-4<br>-100 TJ = 125 º C<br>-3<br>TJ  = 25ºC -2<br>-50<br>-1<br>0 0<br>-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 100 200 300 400 500 600 700<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br>f s<br> - Amperes g<br>ID<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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100,000 -1,000<br>Ciss<br>f = 1 MHz<br>RDS(on) Limit 100µs<br>10,000 -100<br>C oss<br>1ms<br>1,000 -10<br>TJ = 150ºC 10ms<br>Crss T C  = 25ºC<br>Single Pulse  100ms<br>DC<br>100 -1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -1 - 10 - 100 - 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and  Dimensions. 

**IXTK120P20T IXTX120P20T** 

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Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature  Drain Current<br>180 180<br> RG = 1Ω, VGS = -10V  R G = 1Ω, V GS  = -10V<br>160  V DS = -100V   160  VDS = -100V<br>TJ = 125ºC<br>140 140<br>I D = -120A<br>120 120<br>100 100<br>I D = - 60A<br>T J  = 25ºC<br>80 80<br>60 60<br>25 35 45 55 65 75 85 95 105 115 125 -60 -70 -80 -90 -100 -110 -120<br>TJ - Degrees Centigrade ID - Amperes<br>t - Nanosecondsr t - Nanosecondsr<br>**----- End of picture text -----**<br>


## **Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** 

**Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature** 

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700 350 70 260<br> t r td(on) - - - -   t f td(off)d(off) - - - -<br>600 300<br> TJ = 125ºC,  VGS = -10V 65  R G  = 1Ω,  V GS  = -10V 240<br> VDS = -100V          VDS = -100V       DS = -100V        = -100V<br>500 250<br>60 220<br>400 I  D  = -120A 200<br>55 I D = - 60A D = - 60A = - 60A 200<br>300 150<br>I D = - 60A 50 I  D  = - 120A 180<br>200 100<br>45 160<br>100 50<br>0 0 40 140<br>1 2 3 4 5 6 7 8 9 10 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Drain Current  Gate Resistance<br>80 250 500 1000<br>75  t f td(off) - - - - 240 450  t f td(off) - - - -  900<br> R G = 1Ω,  V GS = -10V 400  TJ = 125ºC,  VGS = -10V 800<br>70  VDS = -100V       230  V DS  = -100V<br>350 I  D  = - 120A, - 60A 700<br>65 220<br>300 600<br>TJ = 125ºC<br>60 210 250 500<br>200 400<br>55 200<br>150 300<br>50 190<br>100 200<br>45 TJ = 25ºC 180<br>50 100<br>40 170 0 0<br>-60 -70 -80 -90 -100 -110 -120 1 2 3 4 5 6 7 8 9 10<br>ID - Amperes RG - Ohms<br> - Nanosecondsr  d(on)t  - Nanosecondsff  d(off)t<br>t t<br> - Nanoseconds  - Nanoseconds<br>t<br>t  d(off)<br> d(off)<br>t - Nanosecondsf t - Nanosecondsf  - Nanoseconds<br> - Nanoseconds<br>**----- End of picture text -----**<br>


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70 260<br> t f td(off)d(off) - - - -<br>65  R G  = 1Ω,  V GS  = -10V 240<br> VDS = -100V       DS = -100V        = -100V<br>60 220<br>55 I D = - 60A D = - 60A = - 60A 200<br>50 I  D  = - 120A 180<br>45 160<br>40 140<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> d(off)t<br> - Nanosecondsff<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

**IXTK120P20T IXTX120P20T** 

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Fig. 19. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.0001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and  Dimensions. 

IXYS REF: T_120P20T(A9) 10-25-11 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTK120P20T/power-mosfet-p-channel-200-v-120-a-003-ohm-to-264)
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- [Supplier page](https://es.farnell.com/littelfuse/ixtk120p20t/mosfet-120a-200v-1-04kw-to-264/dp/3930250)
---

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