# Power MOSFET, N Channel, 200 V, 110 A, 0.024 ohm, TO-264, Through Hole

![Product image](https://novapart.co/image/farnell:3930195/)

**URL**: https://novapart.co/products/IXTK110N20L2/power-mosfet-n-channel-200-v-110-a-0024-ohm-to-264
**SKU**: IXTK110N20L2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €19.8800
**Stock**: 10+
**Lead Time**: 267 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 960W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930195/)

## Advance Technical  Information 

## **LinearL2[TM] Power MOSFET w/Extended FBSOA** 

## **IXTK110N20L2 IXTX110N20L2** 

**V =  200V DSS I =  110A D25** 

**R <  24m Ω DS(on)** 

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated 

## **TO-264 (IXTK)** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|200|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|200|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|110|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|275|A|
|**IA**|TC = 25°C|55|A|
|**EAS**|TC = 25°C|5|J|
|**PD**|TC = 25°C|960|W|
|**TJ**||-55...+150|°C|
|**TJM**||150|°C|
|**Tstg**||-55...+150|°C|
|**TL**|1.6mm (0.063 in.) from Case for 10s|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (IXTK)|1.13/10         Nm/lb.in.|1.13/10         Nm/lb.in.|
|**FC**|Mounting Force   (IXTX)|20..120 / 4.5..27|N/lb.|
|**Weight**|TO-264|10|g|
||PLUS247|6|g|



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G<br>D S    (TAB)<br>**----- End of picture text -----**<br>


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PLUS247(IXTX)<br>G<br>D S    (TAB)<br>**----- End of picture text -----**<br>


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G = Gate D      =  Drain<br>S = Source TAB  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75°C 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.        Max.**|**Min.      Typ.        Max.**<br>~~a~~|**Min.      Typ.        Max.**<br>~~a~~|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.        Max.**|**Min.      Typ.        Max.**<br>~~a~~|**Min.      Typ.        Max.**<br>~~a~~|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>200|~~a~~|V<br>~~a~~|
|**VGS(th)**<br>VDS = VGS, ID= 3mA<br>2.0|4.5  V<br>~~a~~<br>~~:~~|4.5  V<br>~~a~~<br>~~:~~|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~:~~|±200    nA<br>~~:~~|
|**IDSS**<br>VDS =  VDSS, VGS=  0V<br>50<br>TJ= 125°C<br>2.5<br>~~|~~|50<br>2.5<br>~~:~~<br>~~a~~<br>~~||~~|50μA<br>2.5 mA<br>~~:~~|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 •  ID25, Note 1<br>24    m<br>~~|~~|24    m<br>~~a~~<br>~~||~~|24    mΩ|



## **Applications** 

Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 

DS100195(9/09) 

© 2009 IXYS CORPORATION, All Rights Reserved 

**IXTK110N20L2 IXTX110N20L2** 

|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.        Max.**|**Min.      Typ.        Max.**|
|---|---|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                         55           75           95        S|, Note 1                         55           75           95        S|
|**Ciss**<br>23<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2160<br>**Crss**<br>320|23<br>2160<br>320|
|**td(on)**<br>40<br>**tr**<br>100<br>**td(off)**<br>33<br>**tf**<br>135<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|40<br>100<br>33<br>135|
|**Qg(on)**<br>500<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>110<br>**Qgd**<br>182|500<br>110<br>182|
|**RthJC**<br>**RthCS**<br>0.15|0.13<br>0.15|



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  TO-264 (IXTK) Outline<br>**----- End of picture text -----**<br>


## **Safe-Operating-Area Specification** 

|**Symbol**|**Test Conditions                                                     Characteristic Values**|**Test Conditions                                                     Characteristic Values**|
|---|---|---|
||**Min.      Typ.        Max.**|**Min.      Typ.        Max.**|
|**SOA**|VDS=  200V, ID= 2.88A, TC= 75°C, Tp = 5s     575|W|



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 PLUS 247 [TM]  (IXTX) Outline<br>**----- End of picture text -----**<br>


|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                                 Characteristic Values**|**Test Conditions                                                 Characteristic Values**|**Test Conditions                                                 Characteristic Values**|**Test Conditions                                                 Characteristic Values**||
|---|---|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)|**Min.      Typ.        Max.**|**Min.      Typ.        Max.**|**Min.      Typ.        Max.**||
|**IS**<br>VGS= 0V||110|110|A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||440     A|440     A|440     A|
|**VSD**<br>IF= 55A, VGS= 0V, Note 1<br>**trr**<br>420<br>**IRM**<br>39<br>**QRM**<br>8.3<br>IF= 55A, -di/dt = 100A/μs,<br>VR= 100V, VGS= 0V|420<br>39<br>8.3|1.35     V<br>420<br>39<br>8.3|1.35     V|1.35     V<br>ns<br>A<br>μC|



Note     1. Pulse test, t ≤ 300μs; duty cycle, d  ≤ 2%. 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>L<br>19.81<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTK110N20L2 IXTX110N20L2** 

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Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ TJ = 25ºC @ TJ = 25ºC<br>120 280<br>VGS = 20V V GS = 20V<br>         14V          14V<br>100          12V 240          12V<br>         10V          10V<br>        8V<br>200<br>8V<br>80 6.5V<br>160<br>6V<br>60 6.5V<br>120<br>40<br>80<br>6V<br>20 5V<br>40<br>5V<br>4V<br>0 0 4V<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts VDS - Volts<br>Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 55A Value vs.<br>@ TJ = 125ºC Junction Temperature<br>120 3.2<br>V GS = 20V<br>         12V  VGS = 10V<br>2.8<br>100          10V<br>8V<br>2.4<br>80 6V I D = 110A<br>2.0<br>60<br>1.6 I D = 55A<br>40<br>5V 1.2<br>20<br>0.8<br>4V<br>0 0.4<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>4.0 120<br>VGS = 10V<br>3.5 100<br>3.0 TJ = 125ºC<br>80<br>2.5<br>60<br>2.0<br>40<br>1.5<br>T J = 25ºC<br>20<br>1.0<br>0.5 0<br>0 20 40 60 80 100 120 140 160 180 200 220 240 260 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - AmperesID  - AmperesID<br> - Normalized<br> - Amperes<br>ID DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

**IXTK110N20L2 IXTX110N20L2** 

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Fig. 7. Input Admittance<br>160<br>140<br>120<br>100<br>80 T J = 125ºC<br>          25ºC<br>60         - 40ºC<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>320<br>280<br>240<br>200<br>160<br>120<br>80 TJ = 125ºC<br>T J   = 25ºC<br>40<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>140<br>TJ = - 40ºC<br>120<br>100 25ºC<br>80 125ºC<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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16<br> V DS = 100V<br>14<br> I D = 55A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 100 200 300 400 500 600 700 800<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Maximum Transient Thermal Impedance** 

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100,000 1.000<br>f = 1 MHz<br>Ciss<br>10,000 0.100<br>1,000 Coss 0.010<br>C rss<br>100 0.001<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTK110N20L2 IXTX110N20L2** 

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Fig. 13. Forward-Bias Safe Operating Area  Fig. 14. Forward-Bias Safe Operating Area<br>@ TC = 25ºC @ TC = 75ºC<br>1,000 1,000<br>R DS(on)  Limit R DS(on) Limit<br>25µs<br>100 100<br>25µs<br>100µs<br>100µs<br>1ms<br>1ms<br>10ms<br>10 10<br>10ms<br>100ms<br>TJ = 150ºC DC TJ = 150 º C 100ms<br>T C  = 25ºC    T C  = 75ºC    DC<br>Single Pulse  Single Pulse<br>1 1<br>1 10 100 1,000 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_110N20L2(9R)9-16-09 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixtk110n20l2/mosfet-110a-200v-960w-to-264-3/dp/3930195)
---

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