# Power MOSFET, X4-Class, N Channel, 200 V, 94 A, 0.0106 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3780392/)

**URL**: https://novapart.co/products/IXTH94N20X4/power-mosfet-x4-class-n-channel-200-v-94-a-00106
**SKU**: IXTH94N20X4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €7.6600
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 360W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 360W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0106ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 94A |
| Drain Source On State Resistance | 0.0106ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3780392/)

## **X4-Class** 

**==> picture [206 x 231] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =   200V<br>DSS<br>I =   94A<br>D25<br>R     10.6m <br>D DS(on)<br>G<br>S<br>TO-247<br>(IXTH)<br>gs G<br>® D<br>V S D (Tab)<br>V<br>G  = Gate           D      =  Drain<br>V<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


## **IXTH94N20X4** 

## **Power MOSFET[TM]** 

N-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratingss**||
|---|---|---|---|
|**VDSS**|TJ = 25C to 175C|200|V|
|**VDGR**|TJ = 25C to 175C, RGS= 1M|200|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C|94|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|220|A|
|**IA**|TC = 25C|47|A|
|**EAS**|TC = 25C|1|J|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      20                   V/ns|150°C                                      20                   V/ns|150°C                                      20                   V/ns|
|**PD**|TC = 25C|360|W|
|**TJ**||-55 ... +175|C|
|**TJM**||175|C|
|**Tstg**||-55 ... +15|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
||1.6 mm (0.062 in.) from Case for 10s|||
|**Md**|Mounting Torque<br>1.13 / 10         Nm/lb.in|1.13 / 10         Nm/lb.in||
|**Weight**|6                        g|6                        g|6                        g|



## **Features** 

- International Standard Package 

- Low RDS(ON) and QG 

- Avalanche Rated 

- Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies 

- DC-DC Converters 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**<br>~~||~~|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250µA<br>200<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250µA<br>2.5 4.5      V<br>~~|~~<br>~~|~~<br>~~|~~|4.5      V<br>~~| |~~<br>~~||~~<br>~~||~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~| |~~<br>~~||~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 150C<br>500   µA<br>~~|~~<br>~~|~~|20<br>500   µA<br>~~| |—~~<br>~~||~~|20A<br>500   µA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1<br>~~|~~|10.6  m<br>~~||~~|10.6  m|



- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS101011B(12/20) 

© 2020 Littelfuse, Inc. 

**IXTH94N20X4** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                       60|100|S|
|**RGi**<br>Gate Input Resistance<br>|5.3||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5050<br>750<br>4|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|390<br>1670|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)|18<br>9<br>97<br>7|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|77<br>21<br>25|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.21|0.42C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||94     A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||376     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 47A, -di/dt = 200A/µs<br>VR= 100V|130<br>1.1<br>17|ns<br>µC<br>A|



Note: 1. Pulse test, t  300s, duty cycle, d  2%. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 

> IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXTH94N20X4** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

**==> picture [512 x 592] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 400<br>90 VGS = 10V9V VGS = 10V<br>8V 7V 350 9V<br>80<br>300 8V<br>70<br>250<br>60<br>6V<br>50 200 7V<br>40<br>150<br>30 6V<br>100<br>20<br>5V 50<br>10<br>5V<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 47A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 150 [o] C Junction Temperature<br>100 2.8<br>90 VGS = 10V8V 2.6 VGS = 10V<br>7V 2.4<br>80<br>6V 2.2<br>70<br>2.0<br>60 1.8 I D = 94A<br>50 1.6<br>I D = 47A<br>1.4<br>40<br>5V 1.2<br>30<br>1.0<br>20<br>0.8<br>10 0.6<br>4V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 175<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br>Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 VGS = 10V  1.2<br>BVDSS<br>3.5 1.1<br>TJ = 150 [o] C<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>TJ = 25 [o] C<br>1.5 0.7 VGS(th)<br>1.0 0.6<br>0.5 0.5<br>0 50 100 150 200 250 300 350 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - AmperesID  - AmperesID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2020 Littelfuse, Inc. 

## **IXTH94N20X4** 

**Fig. 8. Input Admittance** 

**Fig. 7. Maximum Drain Current vs. Case Temperature** 

**==> picture [249 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [248 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>140 VDS = 10V<br>120<br>100<br>80<br>60 TJ = 150 [o] C<br>25 [o] C<br>40 - 40 [o] C<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br>Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>TJJ = 150 [[o]] C<br>100<br>TJJ = 25 [[o]] C<br>50<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD - VoltsSD - Volts - Volts<br> - Amperes<br>ID<br> - Amperes<br>ISS<br>**----- End of picture text -----**<br>


**Fig. 9. Transconductance** 

**==> picture [514 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 300<br>180 VDS = 10V TJ = - 40 [o] C<br>250<br>160<br>140<br>200<br>120 25 [o] C<br>100 150<br>TJJ = 150 [[o]] C<br>80 150 [o] C<br>100<br>60<br>TJJ = 25 [[o]] C<br>40<br>50<br>20<br>0 0<br>0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>ID - Amperes VSD - VoltsSD - Volts - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9 VDS = 100V<br>I D = 47A<br>8 I G = 10mA      10,000<br>Ciss<br>7<br>6 1,000<br>5 Coss<br>4 100<br>3 Crss<br>2 10<br>f = 1 MHz<br>1<br>0 1<br>0 10 20 30 40 50 60 70 80 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br> - Amperes<br>g f s ISS<br>Volts<br> -<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

**IXTH94N20X4** 

**==> picture [523 x 415] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>8 1000<br>7<br>RDS(on) Limit<br>6 100<br>5 100µs<br>4 10<br>3<br>1ms<br>2 1 TJ = 175 [o] C<br>TC = 25 [o] C    10ms<br>1 Single Pulse        DC<br>0 0.1<br>0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 Littelfuse, Inc. 

IXYS REF: T_94N20X4 (206-S203) 9-13-19 

**IXTH94N20X4** 

**==> picture [200 x 223] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 Outline<br>=<br>ele Learpoi 7,<br>I @H® =|<br>77 | Na<br>:<br>TT<br>;<br>1 - Gate<br>M<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

## **IXTH94N20X4** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 Littelfuse, Inc. 



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- [Supplier page](https://es.farnell.com/en-ES/littelfuse/ixth94n20x4/mosfet-n-ch-200v-94a-to-247/dp/3780392)
---

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