# Power MOSFET, N Channel, 100 V, 75 A, 0.021 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757900/)

**URL**: https://novapart.co/products/IXTH75N10L2/power-mosfet-n-channel-100-v-75-a-0021-ohm-to-247
**SKU**: IXTH75N10L2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.1100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 400W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 0.021ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757900/)

## Advance Technical  Information 

## **LinearL2[TM] Power MOSFET w/extended FBSOA** 

**V =   100V DSS I =   75A D25 R ≤ 21m Ω DS(on)** 

## **IXTH75N10L2 IXTT75N10L2** 

**==> picture [489 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>O DD<br>N-Channel Enhancement Mode<br>Guaranteed FBSOA G O R ww Gi<br>Avalanche Rated TO-247 (IXTH)<br>O<br>S<br>Symbol Test Conditions Maximum Ratings<br>G<br>VDSS TJ = 25°C to 150°C     100                    V D S D (Tab)<br>**----- End of picture text -----**<br>


|**Symbolymbolmbol**|**Test Conditions**|**Maximum Ratingsgss**||
|---|---|---|---|
|**VDSSDSS**|TJJ = 25°C to 150°C°C to 150°CC to 150°C°CC|100                    V|100                    V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|100                          V|100                          V|
|**VGSS**|Continuous|±20                       V|20                       V|
|**VGSM**|Transient|±30                            V|30                            V|
|**ID25**|TC = 25°C<br>75|75|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM225|225|A|
|**IA**|TC = 25°C<br>75|75|A|
|**EAS**||2.5|J|
|**PD**|TC = 25°C                                                                    400|C                                                                    400|W|
|**TJ**|-55 to +150|-55 to +150|-55 to +150°C|
|**TJM**|+150|+150|+150°C|
|**Tstg**-55 to +150|-55 to +150|-55 to +150|°C|
|**TL**|1.6mm (0.063in) from Case for 10s                             300|1.6mm (0.063in) from Case for 10s                             300|°C|
|**TSOLD**|Plastic Body for 10s                                                      260|Plastic Body for 10s                                                      260|Plastic Body for 10s                                                      260°C|
|**Md**|Mounting Torque  (TO-247)                                  1.13/10             Nm/lb.in.|Mounting Torque  (TO-247)                                  1.13/10             Nm/lb.in.||
|**Weight**|TO-247                                                                         6.0                         g|TO-247                                                                         6.0                         g|TO-247                                                                         6.0                         g|
||TO-268                                                                            4.0                          g|TO-268                                                                            4.0                          g|TO-268                                                                            4.0                          g|



## **TO-268 (IXTT)** 

G S D (Tab) G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

Designed for Linear Operation International Standard Packages Avalanche Rated Integrated Gate Resistor for Easy Paralleling Guaranteed FBSOA at 75°C 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**<br>~~ry~~|**Min.      Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>100|~~ry~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5|4.5<br>~~ry~~<br>~~—~~|4.5<br>V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~—~~|±100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>50|5<br>50<br>~~_~~|5μA<br>50μA|
|**RDS(on)**<br>VGS= 10V, ID= 0.5 • ID25, Note 1<br>21   m|21   m<br>~~_~~|21   mΩ|



## **Advantages** 

Easy to Mount Space Savings High Power Density 

## **Applications** 

Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 

© 2009 IXYS CORPORATION, All Rights Reserved 

DS100200(9/09) 

**IXTH75N10L2 IXTT75N10L2** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|
|---|---|---|---|
|**gfs**<br>VDS = 10V, ID= 0.5 • ID25, Note 1                      35<br><br>||44<br>|53<br>S<br>|
|**Ciss**<br>**Coss**<br>**C**|<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>|8100<br>1280<br>350|pF<br>pF<br>F|
|**rss**<br> <br>**RGi**<br>Integrated Gate Input Resistor<br>||<br>3.0|p<br> Ω|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 0Ω(External)||23<br>14<br>68<br>15|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>||215<br>36<br>80|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>TO-247<br>||<br>0.21|0.31 °C/W<br>°C/W|



|**Safe Operating Area Specification**<br>**Characteristic Values**<br>**Symbol**<br>**Test Conditions**<br>**Min.        Typ.       Max.**|**Safe Operating Area Specification**<br>**Characteristic Values**<br>**Symbol**<br>**Test Conditions**<br>**Min.        Typ.       Max.**|**Safe Operating Area Specification**<br>**Characteristic Values**<br>**Symbol**<br>**Test Conditions**<br>**Min.        Typ.       Max.**|
|---|---|---|
|**SOA**<br>VDS= 80V, ID= 3A, TC= 75°C, Tp= 5s<br>240||W|



## **Source-Drain Diode** 

|**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||
|---|---|---|---|---|---|
|(TJ= 25°C,|Unless Otherwise Specified)|**Min.**|**Typ.**|**Max.**||
|**IS**|VGS= 0V|||75|A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|||300|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||1.4|V|
|**trr**<br>**IRM**<br>**QRM**|<br> <br> <br>IF= 37.5A, -di/dt = 100A/μs,<br>VR= 50V, VGS= 0V|<br> <br>|180<br>16.2<br>1.46||ns<br>A<br>μC|



Note  1.  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|||||||||**1**|||**2       3**|∅P||||||
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|||||||||||||||||||
||~~e~~<br>Terminals: 1 - Gate<br>3 - Source<br>Dim.<br>Millimeter|||||||||||2 - Drain<br>Tab - Drain<br>Inches||||||
|||||||Min.|||||Max.|Min.||Max.||||
||||A<br>A1||||4.7<br>2.2||||5.3<br>2.54|.185<br>.087||.209<br>.102||||
||||A2<br>b<br>b1|||2.2<br>1.0<br>1.65|||||2.6<br>1.4<br>2.13|.059<br>.040<br>.065||.098<br>.055<br>.084||||
||||b~~2~~|||2.87|||||3.12|.113||.123||||
||||C||||||.4||.8|.016||.031||||
||||D|||20.80|||||21.46|.819||.845||||
||||E|||15.75|||||16.26|.610||.640||||
||||e|||5.20|||||5.72|0.205 0.225||||||
||||L<br>L1|||19.81|||||20.32<br>4.50|.780||.800<br>.177||||
||||∅P|||3.55|||||3.65|.140||.144||||
||||Q|||5.89|||||6.40|0.232 0.252||||||
||||R|||4.32|||||5.49|.170||.216||||
||||S|||6.15|||||BSC|242 BSC||||||
|||||||||||||||||||



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**----- Start of picture text -----**<br>
TO-268 (IXTT) Outline<br>Terminals: 1 - Gate 2 - Drain<br>3 - Source Tab - Drain<br>**----- End of picture text -----**<br>


IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTH75N10L2 IXTT75N10L2** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
80 280<br>VGS = 20V VGS = 20V<br>70          14V          14V<br>         12V 240          12V<br>         10V<br>60 10V<br>200<br>8V<br>50<br>160 8V<br>40<br>120 7V<br>6V<br>30<br>80<br>20 6V<br>40<br>10<br>4V 5V<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**Fig. 4. RDS(on) Normalized to ID = 37.5A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
80 3.0<br>VGS = 20V V GS = 10V<br>70          14V<br>2.6<br>         12V<br>         10V<br>60<br>2.2<br>8V I D = 75A<br>50<br>1.8<br>40 6V I  D  = 37.5A<br>1.4<br>30<br>1.0<br>20<br>10 0.6<br>4V<br>0 0.2<br>0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 37.5A Value vs.  Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>4.5 80<br>4.0 V GS = 10V  70<br>3.5 60<br>3.0 50<br>TJ = 125 º C<br>2.5 40<br>2.0 30<br>1.5 TJ = 25ºC 20<br>1.0 10<br>0.5 0<br>0 20 40 60 80 100 120 140 160 180 200 220 240 260 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

**IXTH75N10L2 IXTT75N10L2** 

**==> picture [263 x 427] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>200<br>180<br>T J = - 40ºC<br>160           25ºC<br>        125ºC<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>240<br>200<br>160<br>120<br>80<br>TJ = 125ºC<br>40 TJ  = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
90<br>T J = - 40ºC<br>80<br>70 25ºC<br>60<br>125ºC<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>ID - Amperes<br>Fig. 10. Gate Charge<br>16<br> VDS = 50V<br>14<br> I D = 37.5A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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**----- Start of picture text -----**<br>
100.0<br>f = 1 MHz<br>Ciss<br>10.0<br>Coss<br>1.0<br>Crss<br>0.1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - NanoFarads<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [257 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTH75N10L2 IXTT75N10L2** 

**Fig. 13. Forward-Bias Safe Operating Area** 

**Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºCC = 75ºC = 75ºC** 

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**----- Start of picture text -----**<br>
@ TC = 25ºC @ TC = 75ºCC = 75ºC = 75ºC<br>1,000 1,000<br>RDS(on) Limit 25µs RDS(on) Limit<br>100 100µs 100 25µs<br>100µs<br>1ms<br>1ms<br>10ms<br>10 10<br>10ms<br>100ms<br>TJ = 150ºC DC TJ = 150ºC 100ms<br>TC = 25ºC    TC = 75ºC    DC<br>Single Pulse  Single Pulse<br>1 1<br>1 10 100 1 10 100<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_75N10L2(7R)9-25-09 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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