# Power MOSFET, P Channel, 100 V, 50 A, 0.055 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930308/)

**URL**: https://novapart.co/products/IXTH50P10/power-mosfet-p-channel-100-v-50-a-0055-ohm-to-247
**SKU**: IXTH50P10
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.9200
**Stock**: 200+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 0.055ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930308/)

## **Standard Power MOSFET** 

## **IXTH50P10 IXTT50P10** 

P-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|-100|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|-100|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**<br>Transient<br>±30<br>V<br>~~So~~||||
|**ID25**<br>TC = 25°C<br>- 50<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>- 200<br>A<br>**IA**<br>TC = 25°C<br>- 50<br>A<br>~~ce~~||||
|**EAS**|TC = 25°C|30|mJ|
|**PD**|TC = 25°C|300|W|
|**TJ**||- 55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||- 55 ... +150|°C|
|**TL**<br>**TSOLD**|1.6mm (0.062 in.) from case for 10s<br>Plastic body for 10s|300<br>260|°C<br>°C|
|**Md**|Mounting torque (TO-247)|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-247                                                                                    6                        g|TO-247                                                                                    6                        g|TO-247                                                                                    6                        g|
|TO-268                                                                                             5                          g|TO-268                                                                                             5                          g|TO-268                                                                                             5                          g|TO-268                                                                                             5                          g|



**V =    - 100V DSS I =    - 50A D25 R ≤ 55m Ω DS(on) TO-247 (IXTH)** G (TAB) D S 

## **TO-268 (IXTT)** 

**==> picture [83 x 32] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>ae A<br>  (TAB)<br>**----- End of picture text -----**<br>


G = Gate D = Drain S = Source TAB = Drain 

## **Features** 

International standard packages JEDEC TO-247 AD 

Low RDS(ON) HDMOS[TM ] process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated 

Low package inductance (< 5nH) - easy to drive and to protect 

## **Applications** 

|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.     Max.**<br>~~|~~|**Min.    Typ.     Max.**<br>~~||~~|**Min.    Typ.     Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250μA<br>-100<br>~~|~~|~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 3.0                 - 5.0     V<br>~~|~~<br>~~||~~|- 3.0                 - 5.0     V<br>~~| |~~<br>~~||~~<br>~~||~~|- 3.0                 - 5.0     V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~||~~|±<br>~~||~~<br>~~||~~|±100<br>nA|
|**IDSS**<br>VDS =  0.8 • VDSS<br>- 25<br>VGS =  0V                                      TJ= 125°C<br>-1<br>~~||~~<br>~~|~~|- 25<br>-1<br>~~||~~<br>~~||~~|- 25<br>μA<br>-1 mA|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25,  Note 1<br>55<br>~~|~~|55<br>~~||~~|55 mΩ|



High side switching Push-pull amplifiers DC Choppers Automatic test equipment 

## **Advantages** 

Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 

DS98905E(6/08) 

© 2008 IXYS CORPORATION,  All rights reserved 

**IXTH50P10 IXTT50P10** 

|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.      Max.**|
|---|---|---|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,  Note 1                    13<br><br>|22<br>|S<br>|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|4350<br>1505<br>733|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 4.7Ω(External)|46<br>39<br>86<br>38|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|140<br>25<br>85|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.25|0.42°C/W<br>°C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.       Max.**|
|---|---|---|
|**IS**<br>VGS= 0V||- 50     A|
|**ISM**<br>Repetitive, pulse width limited by TJM||- 200     A|
|**VSD**<br>IF= - 25A, VGS= 0V,  Note 1||- 3.0     V|
|**trr**<br>180<br>ns<br>IF= - 25A, di/dt = -100A/μs, VR= - 50V, VGS= 0V|||



Note 1:  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**|**(IXTH) Outline**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|||||||||**1**||**2**||**3**|∅P||||||
||||||||||||||||||||
|||Dim.<br>Millimeter<br>~~e~~<br>Terminals: 1 - Gate|||||||||||Inches<br>2 - Drain||||||
|||||||Min.||||||Max.|Min.||Max.||||
||||A<br>A1||||4.7<br>2.2|||||5.3<br>2.54|.185<br>.087||.209<br>.102||||
||||A2<br>b||||2.2<br>1.0|||||2.6<br>1.4|.059<br>.040||.098<br>.055||||
||||b1|||1.65||||||2.13|.065||.084||||
||||b~~2~~|||2.87||||||3.12|.113||.123||||
||||C|||||.4||||.8|.016||.031||||
||||D<br>E|||20.80<br>15.75||||||21.46<br>16.26|.819<br>.610||.845<br>.640||||
||||e|||5.20||||||5.72|0.205|0.225|||||
||||L|||19.81||||||20.32|.780||.800||||
||||L1<br>∅P|||3.55||||||4.50<br>3.65|.140||.177<br>.144||||
||||Q|||5.89||||||6.40|0.232|0.252|||||
||||R|||4.32||||||5.49|.170||.216||||
||||||||||||||||||||



## **TO-268 (IXTT) Outline** 

**==> picture [146 x 289] intentionally omitted <==**

IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTH50P10 IXTT50P10** 

**Fig. 1. Output Characteristics @ 25ºC** 

**==> picture [247 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
-50<br>-45 VGS  = -10V<br>       - 9V<br>-40<br>- 8V<br>-35<br>-30<br>-25 - 7V<br>-20<br>-15 - 6V<br>-10<br>-5 - 5V<br>0<br>0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**==> picture [259 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics<br>@ 125ºC<br>-50<br>-45 VGS  = -10V<br>       - 9V<br>-40<br>- 8V<br>-35<br>-30<br>- 7V<br>-25<br>-20<br>- 6V<br>-15<br>-10<br>- 5V<br>-5<br>0<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID** 

**==> picture [250 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.4<br>2.2 VGS = - 10V<br>T J  = 125ºC<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>T J  = 25ºC<br>1.0<br>0.8<br>0 -25 -50 -75 -100 -125<br>I D - Amperes<br> - Normalized<br>D S (on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [247 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
-140<br>VGS  = -10V<br>-120<br>- 9V<br>-100<br>-80<br>- 8V<br>-60<br>- 7V<br>-40<br>-20 - 6V<br>- 5V<br>0<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** 

**==> picture [244 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>1.8 VGS = - 10V<br>1.6<br>1.4 ID = - 50A<br>I D  = - 25A<br>1.2<br>1.0<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>D S (on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Drain Current vs. Case Temperature** 

**==> picture [247 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
-55<br>-50<br>-45<br>-40<br>-35<br>-30<br>-25<br>-20<br>-15<br>-10<br>-5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

**IXTH50P10 IXTT50P10** 

## **Fig. 7. Input Admittance** 

**==> picture [248 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
-150<br> TJ = - 40ºC<br>-125            25ºC<br>        125ºC<br>-100<br>-75<br>-50<br>-25<br>0<br>-4 -5 -6 -7 -8 -9 -10 -11<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [251 x 390] intentionally omitted <==**

**----- Start of picture text -----**<br>
-150<br>-125<br>-100<br>-75<br>-50 T J  = 125ºC<br>T J  = 125ºC<br>-25<br>0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5<br>VS D - Volts<br>Fig. 11. Capacitance<br>10000<br>Ciss<br>Coss<br>1000<br>C rss<br>f = 1MHz<br>100<br>0 -5 -10 -15 -20 -25 -30 -35 -40<br>VD S - Volts<br> - Amperes<br>S<br>I<br>Capacitance - pF<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

**==> picture [247 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>TJ = - 40ºC<br>35<br>30<br>25ºC<br>25<br>125ºC<br>20<br>15<br>10<br>5<br>0<br>0 -20 -40 -60 -80 -100<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [243 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
-10<br>-9 VDS  = - 50V<br>ID = - 25A<br>-8 IG = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 20 40 60 80 100 120 140<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [252 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>(ºC/W)<br> -<br>(th) J C<br>Z<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS REF: T_50P10(7B) 6-23-08-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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