# Power MOSFET, P Channel, 200 V, 48 A, 0.085 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930295/)

**URL**: https://novapart.co/products/IXTH48P20P/power-mosfet-p-channel-200-v-48-a-0085-ohm-to-247
**SKU**: IXTH48P20P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.0600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | PolarP Series |
| Qualification | - |
| Power Dissipation | 462W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 48A |
| Drain Source On State Resistance | 0.085ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930295/)

## **PolarP[TM] Power MOSFETs** 

## **IXTT48P20P IXTH48P20P** 

P-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|- 200|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|- 200|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|- 48|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|-144|A|
|**IA**|TC = 25°C|- 48|A|
|**EAS**|TC = 25°C|2.5|J|
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns|
|**PD**|TC = 25°C|462|W|
|**TJ**||- 55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||- 55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-268                                                                                         4                         g|TO-268                                                                                         4                         g|TO-268                                                                                         4                         g|
||TO-247                                                                                             6                          g|TO-247                                                                                             6                          g|TO-247                                                                                             6                          g|



**V =    - 200V DSS I =    - 48A D25 R ≤ 85m Ω DS(on)** 

**==> picture [109 x 70] intentionally omitted <==**

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TO-268 (IXTT)<br>G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


**==> picture [110 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 (IXTH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

International Standard Packages Rugged PolarP[TM] Process Avalanche Rated Low Package Inductance Fast intrinsic Diode 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

|(TC, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**<br>~~|~~|**Min.       Typ.       Max.**<br>~~||~~|**Min.       Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250μA<br>- 200<br>~~|~~<br>~~||~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 2.0                       - 4.0     V<br>~~|~~<br>~~||~~|- 2.0                       - 4.0     V<br>~~| |~~<br>~~||~~|- 2.0                       - 4.0     V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~||~~|±<br>~~||~~<br>~~=~~|±100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 25<br>TJ= 125°C<br>- 200<br>~~|~~|- 25<br>- 200<br>~~=-~~<br>~~||~~|- 25<br>μA<br>- 200μA|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>85<br>~~|~~|85<br>~~||~~|85 mΩ|



## **Applications** 

High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 

DS99981C(01/13) 

© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTT48P20P IXTH48P20P** 

|**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)<br>|**Characteristic**<br>**Min.      Typ.**|**Characteristic**<br>**Min.      Typ.**|**Values**<br>**Max.**|**Values**<br>**Max.**|
|---|---|---|---|---|---|
|**gfs**|VDS= -10V, ID= 0.5 • ID25,  Note 1|19|32||S|
|**Ciss**|||5400||pF|
|**Coss**|VGS= 0V, VDS= - 25V, f = 1MHz||1040||pF|
|**Crss**|||170||pF|
|**td(on)**|**Resistive Switching Times**||30||ns|
|**tr**<br>**td(off)**<br>**tf**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3Ω(External)|<br> <br>|46<br>67<br>27||ns<br>ns<br>ns|
|**Qg(on)**|||103||nC|
|**Qgs**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||23||nC|
|**Qgd**|||40||nC|
|**RthJC**||||0.27|°C/W|
|**RthCS**|TO-247||0.21||°C/W|



## **Safe Operating Area Specification** 

|**Symbol**|**Test Conditions                                                 Characteristic**|**Test Conditions                                                 Characteristic**|**Values**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|**SOA**|VDS=  - 200V, ID= -1.35A, TC= 70°C, Tp = 5s    270||W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|
|---|---|---|
|**IS**<br>VGS= 0V||- 48     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||-192     A|
|**VSD**<br>IF= - 24A, VGS= 0V,  Note 1||- 3.3     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= - 24A, -di/dt = -100A/μs<br>VR= -100V, VGS= 0V|260<br>4.2<br>- 32.2|ns<br>μC<br> A|



Note       1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

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TO-268 Outline<br>Terminals: 1 - Gate 2,4  - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


|||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**TO-247**|||||**Outline**||||||||||||||||
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|||||||||**1**|||**2**||**3**||∅P|||||||
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||||||||||||||~~e~~|||||||||
|||Terminals:|||||||1 -|||Gate||||2 - Drain||||||
||||||||||3 -|||Source||||||||||
|||Dim.<br>A<br>A1||||Millimeter<br>Min.<br>Max.<br>4.7<br>5.3<br>2.2<br>2.54||||||||||Inches<br>Min.<br>Max.<br>.185<br>.209<br>.087<br>.102||||||
||||A2||||2.2||||||2.6|||.059||.098||||
||||b||||1.0||||||1.4|||.040||.055||||
||||b1|||1.65|||||||2.13|||.065||.084||||
||||b~~2~~|||2.87|||||||3.12|||.113||.123||||
||||C|||||.4|||||.8|||.016||.031||||
||||D<br>E|||20.80<br>15.75|||||||21.46<br>16.26|||.819<br>.610||.845<br>.640||||
||||e|||5.20|||||||5.72||0.205 0.225|||||||
||||L|||19.81|||||||20.32|||.780||.800||||
||||L1||||||||||4.50|||||.177||||
||||∅P|||3.55|||||||3.65|||.140||.144||||
||||Q|||5.89|||||||6.40||0.232 0.252|||||||
||||R|||4.32|||||||5.49|||.170||.216||||
||||S|||6.15|||||BSC|||||242 BSC||||||
|||||||||||||||||||||||



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTT48P20P IXTH48P20P** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-50 -160<br>-45 VGS = -10V V GS = -10V<br>       - 9V -140        - 9V<br>-40 - 8V<br>-120<br>-35<br>- 7V - 8V<br>-100<br>-30<br>-25 -80<br>-20 - 6V -60 - 7V<br>-15<br>-40<br>- 6V<br>-10<br>- 5V -20<br>-5 - 5V<br>0 0<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -5 -10 -15 -20 -25 -30<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = - 24A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>-50 2.4<br>-45 V       - 9VGS = -10V 2.2 VGS = -10V<br>- 8V<br>-40 2.0<br>-35 - 7V 1.8 I D = - 48A<br>-30 1.6<br>I D = - 24A<br>-25 1.4<br>- 6V<br>-20 1.2<br>-15 1.0<br>-10 0.8<br>-5 - 5V 0.6<br>0 0.4<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 24A Value vs.  Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.8 -52<br>2.6 VGS = -10V T J  = 125ºC -44<br>2.4<br>2.2 -36<br>2.0<br>-28<br>1.8<br>1.6 -20<br>1.4<br>-12<br>1.2 TJ = 25ºC<br>1.0<br>-4<br>0.8<br>0 -20 -40 -60 -80 -100 -120 -140 -160 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - AmperesID  - AmperesID<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

**IXTT48P20P IXTH48P20P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>-90<br>-80 TJ = - 40ºC<br>          25ºC<br>      125ºC<br>-70<br>-60<br>-50<br>-40<br>-30<br>-20<br>-10<br>0<br>-3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-160<br>-140<br>-120<br>-100<br>-80<br>-60 T J = 125ºC<br>-40<br>TJ  = 25ºC<br>-20<br>0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>60<br>T J = - 40ºC<br>50<br>25ºC<br>40<br>30 125ºC<br>20<br>10<br>0<br>0 -10 -20 -30 -40 -50 -60 -70 -80 -90<br>ID - Amperes<br>Fig. 10. Gate Charge<br>-10<br>-9  VDS = -100V<br> I D = - 24A<br>-8<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 11. Capacitance<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
10,000 1<br>C iss<br>0.1<br>1,000<br>Coss<br>0.01<br>Crss<br>f = 1 MHz<br>100 0.001<br>0 -5 -10 -15 -20 -25 -30 -35 -40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTT48P20P IXTH48P20P** 

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**----- Start of picture text -----**<br>
Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area<br>@ TC = 25ºC @ TC = 70ºC<br>- 1,000 - 1,000<br>TJ = 150ºC TJ = 150ºC<br>TC = 25ºC  TC = 70ºC<br>Single Pulse  Single Pulse<br>-100 - 100 25µs<br>RDS(on) Limit 100µs RDS(on) Limit<br>100µs<br>1ms<br>1ms<br>-10 - 10<br>10ms<br>10ms<br>100ms<br>DC 100ms<br>DC<br>-1 -1<br>-1 - 10 - 100 - 1,000 - 1 - 10 - 100 - 1,000<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_48P20P(B7)8-03-09-A 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [View this product on Novapart](https://novapart.co/products/IXTH48P20P/power-mosfet-p-channel-200-v-48-a-0085-ohm-to-247)
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---

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