# Power MOSFET, PolarFET, N Channel, 500 V, 36 A, 0.17 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757897/)

**URL**: https://novapart.co/products/IXTH36N50P/power-mosfet-polarfet-n-channel-500-v-36-a-017-ohm
**SKU**: IXTH36N50P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.2000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 540W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.17ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757897/)

## **PolarHV[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated 

**IXTH 36N50P V =   500     V DSS IXTQ 36N50P I =     36     A D25 IXTT 36N50P R ≤ 170  m Ω DS(on) IXTV 36N50P IXTV 36N50PS** 

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TO-3P (IXTQ)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**<br>**VDGR**|TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 M|500<br>= 1 MΩ<br>500||V<br>V|G<br>D S||(TAB)||||||
|**VGS**|Continuous|±30||V|||||||||
|**VGSM**|Transient|±40||V|**TO-247 (IXTH)**||||||||
|**ID25**|TC = 25°C|36||A|||||||||
|**IDM**|TC = 25°C, pulse width limited by TJM<br>108|||A|||||||||
|**IAR**|TC = 25°C|36||A|||||||(TAB)||
|**EAR**|TC = 25°C|50||mJ|||||||||
|**EAS**|TC = 25°C|1.5||J|||||||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>10||V/ns||**TO-268 (IXTT)**||||||||
|TJ ≤150°C, RG= 3Ω<br>**PD**<br>TC = 25°C<br>540<br>W<br>**TJ**<br>-55 ... +150<br>°C<br>**TJM**<br>150<br>°C<br>G<br>S<br>~~Re~~||||||||||D (TAB)|D (TAB)|D (TAB)|
|**Tstg**||-55 ... +150||°C|||||||||
|**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>300<br>Plastic body for 10 s<br>260|||°C<br>°C|**PLUS220 (IXTV)**||||||||
|**Md**|Mounting torque(TO-247)|1.13/10|Nm/lb.in.||||||||||
|**FC**|Mounting force (PLUS220)|20..120/4.5..15||N/lb|G||||||||
|**Weight**|TO-247|6||g|S<br>D||D (TAB)|||D (TAB)|||
|TO-268|TO-268|5||g|||||||||
|PLUS220|PLUS220|2||g|**PLUS220 SMD(IXTV..S)**||||||||
|TO-3P|TO-3P|5.5||g|||||||||
|**Symbol**|**Test Conditions**|**Characteristic Values**|||||||||||
|(TJ= 25°C unless otherwise specified)<br>**Min.    Typ.**<br>**Max.**<br>**VDSS**<br>VGS = 0 V, ID= 250µA<br>500<br>**VGS(th)**<br>VDS = VGS, ID= 250µA<br>3.0<br>5.0<br>**IGSS**<br>VGS =±30 VDC, VDS= 0<br>±100<br>**IDSS**<br>VDS =  VDSS<br>25<br>VGS= 0 V<br>TJ= 125°C<br>250<br>**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>170  m<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>~~=—__~~||||V<br>V<br>nA<br>µA<br>µA<br>170  mΩ|G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain<br>**Features**<br>l International standard packages<br>l Unclamped Inductive Switching (UIS)<br>rated<br>l Low package inductance<br>- easy to drive and to protect<br>D (TAB)<br>G<br>S||||||||



DS99228E(01/06) 

© 2006 IXYS All rights reserved 

**IXTH 36N50P  IXTQ 36N50P  IXTT 36N50P IXTV36N50P  IXTV 36N50PS** 

||**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|---|
|||**Typ.**|**Max.**||
||**gfs**<br>VDS= 20 V; ID= 0.5 ID25, pulse test<br>23|36||S|
||**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|5500<br>510<br>40|p<br>p<br>p|F<br>F<br>F|
||||||
||**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>**td(off)**<br>RG= 3Ω(External)<br>**tf**|25<br>27<br>75<br>21|n<br>n<br>n<br>n|s<br>s<br>s<br>s|
||**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**|85<br>30<br>31|n<br>n<br>n|C<br>C<br>C|
||**RthJC**<br>**RthCS**<br>(TO-247 and TO-3P)<br>(PLUS220)<br>|<br>0.21<br>0.21|0.23°C<br>°C<br> °C|/W<br>/W<br>/W|



|**Source-Drain Diode                                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)|**Source-Drain Diode                                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)|**Source-Drain Diode                                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)|
|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0 V||36<br>A|
|**ISM**<br>Repetitive||108<br>A|
|**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %||1.5<br>V|
|**trr**<br>IF= 25 A,  -di/dt = 100 A/µs<br>VR= 100 V,  VGS= 0 V|400|ns|



## **Characteristic Curves** 

**Fig. 1. Output Characteristics @ 25ºC** 

**Fig. 2. Extended Output Characteristics @ 25ºC** 

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36 80<br>32 V GS = 10V 70 VGS = 10V<br>           8V            8V<br>7V<br>28            7V<br>60<br>24<br>50<br>6.5V<br>20 6V<br>40<br>16<br>30 6V<br>12<br>5.5V<br>20<br>8<br>5.5V<br>4 5V 10<br>5V<br>0 0<br>0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 22 24<br>V D S - Volts V D S - Volts<br> - Amperes  - Amperes<br>I D I D<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6,771,478 B2 

## **IXTH 36N50P  IXTQ 36N50P  IXTT 36N50P IXT V36N50P  IXTV 36N50PS** 

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Fig. 3. Output Characteristics<br>@ 125ºC<br>36<br>32 VGS = 10V<br>          7V<br>28           6V<br>24<br>20<br>5.5V<br>16<br>12<br>5V<br>8<br>4 4.5V<br>0<br>0 2 4 6 8 10 12 14 16<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Norm alized to ID = 18A Value vs. Drain Current** 

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3.4<br>3 VGS = 10V<br>2.6 TJ = 125 º C<br>2.2<br>1.8<br>1.4<br>1 TJ = 25ºC<br>0.6<br>0 10 20 30 40 50 60 70 80<br>I D - Amperes<br>  - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Norm alized to ID = 18A Value vs. Junction Tem perature** 

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3.1<br>2.8 VGS = 10V<br>2.5<br>2.2<br>1.9 ID = 36A<br>1.6<br>1.3 ID = 18A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Tem perature<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br>  - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 7. Input Adm ittance** 

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55<br>50<br>45<br>40<br>35<br>30<br>25<br>20  T J = 125ºC<br>         25ºC<br>15<br>        -40ºC<br>10<br>5<br>0<br>4 4.5 5 5.5 6 6.5 7<br>V G S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

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70<br>60 TJ = -40ºC<br>       25ºC<br>50      125ºC<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br>  - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXTH 36N50P  IXTQ 36N50P  IXTT 36N50P IXTV36N50P  IXTV 36N50PS** 

**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>20<br>10 TJ = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>V S D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>9 VDS = 250V<br>8 ID = 18A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forw ard-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
10000 1000<br>TJ = 150ºC<br>Ciss TC = 25ºC<br>R DS(on) Limit<br>1000 100<br>25µs<br>C oss 100µs<br>100 10<br>1ms<br>10ms<br>DC<br>f  = 1MHz<br>Crss<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>V D S - Volts V D S - Volts<br>Fig. 13. Maximum Transient Thermal Resistance<br> - Amperes<br>D<br>I<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>C / W<br>º<br>  -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

## **IXTH 36N50P  IXTQ 36N50P  IXTT 36N50P IXTV 36N50P  IXTV 36N50PS** 

## **TO-247 AD (IXTH) Outline** 

## **TO-3P (IXTQ) Outline** 

## **TO-268 (IXTT) Outline** 

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**----- Start of picture text -----**<br>
 1       2       3<br>Lit}<br>Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>l<br>® L.<br>Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.7 5.3 .185 .209<br>A1 2.2 2.54 .087 .102<br>A2 2.2 2.6 .059 .098<br>b 1.0 1.4 .040 .055<br>b1 1.65 2.13 .065 .084<br>b2 2.87 3.12 .113 .123<br>C .4 .8 .016 .031<br>D 20.80 21.46 .819 .845<br>E 15.75 16.26 .610 .640<br>e 5.20 5.72 0.205 0.225<br>L 19.81 20.32 .780 .800<br>L1 4.50 .177<br>∅ P 3.55 3.65 .140 .144<br>Q 5.89 6.40 0.232 0.252<br>R 4.32 5.49 .170 .216<br>S 6.15 BSC 242 BSC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 PLUS220 (IXTV) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
PLUS220SMD (IXTV_S)  Outline<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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