# MOSFET, P-CH, 500V, 20A, TO-247

![Product image](https://novapart.co/image/farnell:3771262/)

**URL**: https://novapart.co/products/IXTH20P50P./mosfet-p-ch-500v-20a-to-247
**SKU**: IXTH20P50P.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.6200
**Stock**: 10+
**Lead Time**: 298 days (indicative)

## Description

Channel Type:P Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Thresho 03AH1484

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | PolarP Series |
| Qualification | - |
| Power Dissipation | 460W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.45ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771262/)

## **PolarP[TM]** 

## **Power MOSFET** 

P-Channel Enhancement Mode Avalanche Rated 

## **IXTT20P50P IXTH20P50P** 

**V =    - 500V DSS I =    - 20A D25 R  450m  DS(on)** 

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TO-268 (IXTT)<br>**----- End of picture text -----**<br>


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G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|- 500|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|- 500|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C|- 20|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|- 60|A|
|**IA**|TC = 25C|- 20|A|
|**EAS**|TC = 25C|2.5|J|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C|10|V/ns|
|**PD**|TC = 25C|460|W|
|**TJ**||- 55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||- 55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-268                                                                                            4                         g|TO-268                                                                                            4                         g|TO-268                                                                                            4                         g|
|TO-247                                                                                              6                        g|TO-247                                                                                              6                        g|TO-247                                                                                              6                        g|TO-247                                                                                              6                        g|



## **TO-247 (IXTH)** 

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G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


- G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Packages 

- Avalanche Rated 

- Rugged PolarPTM Process 

- Low Package Inductance 

- Fast Intrinsic Diode 

## **Advantages** 

- Easy to Mount 

- Space Savings 

|(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250A<br>- 500|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250A<br>- 2.0                     - 4.5     V|- 2.0                     - 4.5     V<br>~~_~~|- 2.0                     - 4.5     V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~_~~<br>~~_~~|100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 25<br>TJ= 125C<br>- 200|- 25<br>- 200<br>~~=~~|- 25<br>A<br>- 200A|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>450|450<br>~~=~~<br>~~__~~|450 m|



- High Power Density 

## **Applications** 

- High-Side Switches 

- Push Pull Amplifiers 

- DC Choppers 

- Automatic Test Equipment 

- Current Regulators 

DS99984C(11/16) 

© 2016 IXYS CORPORATION,  All Rights Reserved 

## **IXTT20P50P IXTH20P50P** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,  Note 1                    11|18|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|5120<br>525<br>75|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3(External)|26<br>32<br>80<br>34|ns<br>ns<br>ns<br>ns|
||||
|**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|103<br>28<br>38|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.21|0.27C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||- 20     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||- 80     A|
|**VSD**<br>IF= -10A, VGS= 0V,  Note 1||- 2.8     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= -10A, -di/dt = -150A/s<br>VR= -100V, VGS= 0V|406<br>8.93<br>- 44|ns<br>μC<br> A|



Note      1:  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTT20P50P IXTH20P50P** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>-20<br>-18 VGS = -10V<br>       - 7V<br>-16<br>-14<br>- 6V<br>-12<br>-10<br>-8<br>-6 - 5V<br>-4<br>-2<br>0<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125ºC<br>-20<br>-18 VGS = -10V<br>       - 7V<br>-16<br>-14 - 6V<br>-12<br>-10 - 5V<br>-8<br>-6<br>-4<br>-2<br>0<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = -10A Value vs.<br>Drain Current<br>2.4<br>2.2 VGS = -10V<br>TJ = 125ºC<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>TJ = 25ºC<br>1.0<br>0.8<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-50<br>VGS = -10V<br>-45<br>        - 7V<br>-40<br>-35<br>-30 - 6V<br>-25<br>-20<br>-15<br>-10<br>- 5V<br>-5<br>0<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = -10A Value vs.<br> Junction Temperature<br>2.4<br>VGS = -10V<br>2.0<br>I  D  = - 20A<br>1.6<br>I D = -10A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>-22<br>-18<br>-14<br>-10<br>-6<br>-2<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION,  All Rights Reserved 

**IXTT20P50P IXTH20P50P** 

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Fig. 7. Input Admittance<br>-35<br>-30<br>-25<br>-20<br>-15<br>TJ = 125ºC<br>          25ºC<br>-10      - 40ºC<br>-5<br>0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-60<br>-50<br>-40<br>-30<br>TJ = 125ºC<br>-20<br>TJ  = 25ºC<br>-10<br>0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>40<br>TJ = - 40ºC<br>35<br>30<br>25ºC<br>25<br>20<br>125ºC<br>15<br>10<br>5<br>0<br>0 -5 -10 -15 -20 -25 -30 -35<br>ID - Amperes<br>Fig. 10. Gate Charge<br>-10<br>-9  VDS = - 250V<br> I D = -10A<br>-8<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 - 100<br>RDS(on) Limit<br>Ciss 100µs<br>1ms<br>1,000 -10<br>10ms<br>Coss<br>100ms<br>100 - 1 DC<br>Crss TJ = 150ºC<br>f = 1 MHz  TC = 25ºC<br>Single Pulse<br>10 - 0.1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 10 - 100 -1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. 

**IXTT20P50P IXTH20P50P** 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


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TO-268 OUTLINE TO-247 OUTLINE<br>——fe ;1 @ 3 qAe4 —E EB= ete]=A—, b——c FS)i L B[ok @ [0<br>i “<br>7<br>= a R (©)<br>O Oo = Oo C] #1<br>atict [es , | L<br>ovs cPnow—T<br>ul<br>[=n > r rat<br>3<br>oor * ° | sl ona be PINS: 1 - Gate<br>                   2,4 - Drain<br>= T Hi BE | "<br>3 - Source<br>PINS: 1 - Gate teey 1120 [36]<br>                   2,4 - Drain<br>3 - Source INCHES<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_20P50P(B7) 5-13-08 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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