# Power MOSFET, N Channel, 650 V, 20 A, 0.185 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757923/)

**URL**: https://novapart.co/products/IXTH20N65X2/power-mosfet-n-channel-650-v-20-a-0185-ohm-to-247
**SKU**: IXTH20N65X2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.8000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class Series |
| Qualification | - |
| Power Dissipation | 290W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.185ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757923/)

## **X3-Class Power MOSFET[TM]** 

## **IXTA20N65X2 IXTP20N65X2 IXTH20N65X2** 

**V =   650V DSS I =   20A D25 R**  **185m**  **DS(on)** 

|N-Channel Enhancement Mode<br>Avalanche Rated|N-Channel Enhancement Mode<br>Avalanche Rated||G<br>@|@|D<br>S<br>@|G<br>S<br>**TO-220**<br>**TO-263**<br>**(IXTA)**<br>@|G<br>S<br>**TO-220**<br>**TO-263**<br>**(IXTA)**<br>@|D (Tab)<br>@|D (Tab)<br>@|D (Tab)<br>@|
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~a~~||||||**(IXTP)**||>|>|>|
|**VDSS**|TJ = 25C to 150C||650||V||||||
|**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>**VGSS**<br>Continuous<br>30<br>V<br>~~ee~~||||||S<br>G<br>D||D (Tab)|D (Tab)|D (Tab)|
|**VGSM**|Transient||40||V|**TO-247**|||||
|**ID25**|TC = 25C||20||A|**(IXTH)**|||||
|**IDM**|TC = 25C, Pulse Width Limited by TJM||22||A||||||
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C||5<br>400||A<br>mJ|G<br>S<br>D||D (Tab)|D (Tab)|D (Tab)|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns||150°C                                      50                   V/ns|150°C                                      50                   V/ns||G  = Gate           D      =  Drain||G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|
|**PD**|TC = 25C||290||W|S  = Source       Tab   =  Drain|||S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|
|**TJ**|||-55 ... +150||C||||||
|**TJM**|||150||C||||||
|**Tstg**|||-55 ... +150||C||||||
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300||°C|**Features**|||||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260||°C||||||
|**FC**<br>**Md**|Mounting Force   (TO-263)                      10..65 / 2.2..14.6                    N/lb<br>Mounting Torque (TO-220 & TO-247)|Mounting Force   (TO-263)                      10..65 / 2.2..14.6                    N/lb<br>Mounting Torque (TO-220 & TO-247)<br>1.13 / 10         Nm/lb.in||Mounting Force   (TO-263)                      10..65 / 2.2..14.6                    N/lb<br>1.13 / 10         Nm/lb.in||International Standard Packages<br>Low RDS(ON)and QG<br>Avalanche Rated||||International Standard Packages|
|**Weight**|TO-263|2.5|2.5||g|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|
|TO-220|TO-220<br>3.0|3.0|3.0||g||||||
|TO-247|TO-247<br>6.0|6.0|6.0||g|**Advantages**|||||
|||||||High Power Density|||||
|**Symbol**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|||Easy to Mount|||||
|(TJ= 25C, Unless Otherwise Specified)||**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**||Space Savings|||||
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**|VGS = 0V, ID= 250µA<br>VDS = VGS, ID= 250µA<br>VGS =30V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|650<br>2.5<br>TJ= 125C|650<br>2.5 4.5      V<br>100   nA<br>5<br>50<br>~~||~~<br>~~|~~<br>~~|=~~||V<br>4.5      V<br>100   nA<br>5A<br>50A|**Applications**<br>Switch-Mode and Resonant-Mode<br> Power Supplies<br>DC-DC Converters<br>PFC Circuits<br>AC and DC Motor Drives|||Switch-Mode and Resonant-Mode<br>AC and DC Motor Drives|Switch-Mode and Resonant-Mode<br>AC and DC Motor Drives|
|||||||Robotics and Servo Controls|||Robotics and Servo Controls|Robotics and Servo Controls|
|**RDS(on)**|VGS = 10V, ID= 0.5**•**ID25, Note 1||155        185   m|155        185   m|155        185   m||||||



**==> picture [110 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D<br>S<br>D (Tab)<br>TO-247<br>(IXTH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

- International Standard Packages 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

- Switch-Mode and Resonant-Mode Power Supplies 

- DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 

DS100868C(1/20) 

© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXTA20N65X2     IXTP20N65X2 IXTH20N65X2** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                      11|18|S|
|**RGi**<br>Gate Input Resistance<br>|3.7||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|1450<br>1060<br>1.4|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|64<br>250|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10 (External)|19<br>27<br>47<br>20|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|27<br>8<br>11|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21|0.43C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||20     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||80     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br>  <br>IF= 10A, -di/dt = 100A/µs<br>VR= 100V|350<br>4.3<br>24.6|ns<br>C<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXTA20N65X2     IXTP20N65X2 IXTH20N65X2** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>20<br>V GS = 10V<br>18            8V<br>16 7V<br>14<br>12<br>10<br>8<br>6V<br>6<br>4<br>2<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [265 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>45<br>40 V GS = 10V<br>35 8V<br>30<br>25 7V<br>20<br>15<br>10<br>6V<br>5<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature** 

**Fig. 3. Output Characteristics @ TJ = 125[o] C** 

**==> picture [538 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 4.2<br>VGS = 10V<br>18              8V 3.8 V GS = 10V<br>16 7V 3.4<br>14 3.0<br>12 6V 2.6 I D = 20A<br>10 2.2<br>8 1.8 I  D = 10A<br>6 1.4<br>4 1.0<br>5V<br>2 0.6<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 VGS = 10V  1.2<br>3.5<br>1.1 BVDSS<br>T J  = 125 [o] C<br>3.0<br>1.0<br>2.5<br>0.9<br>2.0<br>1.5  TJ = 25 [o] C 0.8 V GS(th)<br>0.7<br>1.0<br>0.5 0.6<br>0 5 10 15 20 25 30 35 40 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXTA20N65X2     IXTP20N65X2 IXTH20N65X2** 

**==> picture [533 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>22 30<br>20 VDS = 10V<br>25<br>18<br>16<br>20<br>14<br>12<br>15<br>10<br>8 TJ = 125 [o] C<br>10<br>           25 [o] C<br>6<br>- 40 [o] C<br>4 5<br>2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


## **Fig. 9. Transconductance** 

**Fig. 10. Forward Voltage Drop of Intrinsic Diode** 

**==> picture [530 x 399] intentionally omitted <==**

**----- Start of picture text -----**<br>
35 100<br>30 VDS = 10V TJ = - 40 [o] C 90<br>80<br>25 70<br>25 [o] C<br>60<br>20<br>50<br>15<br>125 [o] C 40<br>TJ = 125 [o] C<br>10 30<br>20 TJ = 25 [o] C<br>5<br>10<br>0 0<br>0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 10,000<br>9  V DS = 325V<br>8  I D = 10A 1,000<br> I G = 10mA     Ciss<br>7<br>6 100<br>5<br>Coss<br>4 10<br>3<br>2 1<br>1 f = 1 MHz   Crss<br>0 0<br>0 4 8 12 16 20 24 28 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTA20N65X2     IXTP20N65X2 IXTH20N65X2** 

**==> picture [530 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>14 100<br>12 RDS(on) Limit<br>100µs<br>10<br>10<br>8<br>1<br>6<br>1ms<br>4<br>0.1  TJ = 150 [o] C<br>10m s<br>2  TC = 25 [o] C    DC<br>Single Pulse<br>0 0.01<br>0 100 200 300 400 500 600 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


**==> picture [539 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXTA20N65X2     IXTP20N65X2 IXTH20N65X2** 

**==> picture [177 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-263 Outline E A<br>ek et<br>___<br>| qT<br>3 5<br>2 b<br>|<br>: = a=<br>H A 1 HetpH<br>HH Ly Hy<br>i ie! Ts _<br>cH singi |<br>goer<br>[P""4l<br>ierrhs 28Gay<br>= yy ete<br>T | |<br>IIo<br>1 - Gate (J KI<br>B4 | BY<br>2,4 - Drain GY yy<br>3 - Source seaMINIMUM“4hPCB FOOToolCa(FS<br>TO-220 Outline<br>E A<br>wf ie<br>| tA oa<br>TQ Ht a,<br>D<br>ojo<br>12<br>3<br>me a L<br>ul<br>L<br>ce<br>Kb<br>3xb2<br>1 - Gate<br>2,4 - Drain<br>Sane 3 - Source<br>TO-247 Outline<br>B=] [tee<br>“TR ok @[D<br>1 7 rq| # aa<br>Tr| @xrllThi [S] 02<br>a.<br>er<br>12 3c ont<br>i<br>7<br>EcH]<br>i ef<br>Al a ia4bf 1 - Gate<br>2,4 - Drain<br>[él J DICTA WD) 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_20N65X2(Y4-S602) 12-12-17 

**IXTA20N65X2     IXTP20N65X2 IXTH20N65X2** ~~sd~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION, All Rights Reserved 



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- [Supplier page](https://es.farnell.com/littelfuse/ixth20n65x2/mosfet-n-ch-650v-20a-to-247/dp/4757923)
---

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