# Power MOSFET, N Channel, 2.5 kV, 1.5 A, 40 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930339/)

**URL**: https://novapart.co/products/IXTH1N250/power-mosfet-n-channel-25-kv-15-a-40-ohm-to-247
**SKU**: IXTH1N250
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €21.8900
**Stock**: 100+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 2.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.5A |
| Drain Source On State Resistance | 40ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930339/)

## **High Voltage Power MOSFET** 

## **IXTH1N250** 

**V =   2500V DSS I =   1.5A D25 R ≤ 40 Ω DS(on)** 

N-Channel Enhancement Mode Fast Intrinsic Diode 

## **TO-247** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|2500|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|2500|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|1.5|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|6|A|
|**PD**|TC = 25°C|250|W|
|**TJ**||- 55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||- 55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) From Case for 10s|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**6                       g|6                       g|6                       g|



**==> picture [76 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D S     Tab<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

International Standard Package Molding Epoxies Weet UL 94 V-0 Flammability Classification Fast Intrinsic Diode Low Package Inductance 

## **Advantages** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>~~|~~|**Min.      Typ.      Max.**<br>~~||~~|**Min.      Typ.      Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>2500<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.0                      4.0     V<br>~~|~~<br>~~|~~<br>~~|~~|2.0                      4.0     V<br>~~| |~~<br>~~||~~<br>~~|~~|2.0                      4.0     V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|~~<br>~~|~~|±<br>~~| |~~<br>~~|~~|±100<br>nA|
|**IDSS**<br>VDS =  0.8 • VDSS, VGS= 0V<br>25<br>TJ= 125°C                            25<br>~~|~~|25<br>C                            25<br>~~|—~~<br>~~rq~~|25<br>μA<br>μA<br>~~rq~~|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>40<br>|40<br>~~—~~<br>~~rq~~|40<br>Ω<br>~~rq~~|



Easy to Mount Space Savings High Power Density 

## **Applications** 

High Voltage Power Supplies Capacitor Discharge Pulse Circuits 

DS99761C(04/12) 

© 2012 IXYS CORPORATION, All Rights Reserved 

**IXTH1N250** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>**gfs**<br>VDS= 50V, ID= 0.5A,  Note 1                           1.0         1.8<br>mS<br>**Ciss**<br>1660<br>pF<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>77<br>pF<br>**Crss**<br>23<br>pF<br>**td(on)**<br> 69<br>ns<br>**tr**<br>25<br>ns<br>**td(off)**<br>132<br>ns<br>**tf**<br>39<br>ns<br>**Qg(on)**<br>41<br>nC<br>**Qgs**<br>VGS= 10V, VDS= 600V, ID= 0.5A<br>8<br>nC<br>**Qgd**<br>16<br>nC<br>**RthJC**<br>0.50 °C/W<br>**RthCS**<br>0.21<br>°C/W<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>**IS**<br>VGS= 0V<br>1.5      A<br>**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>6      A<br>**VSD**<br>IF=  1A, VGS= 0V,  Note 1<br>1.5     V<br>**trr**<br>IF=  1A, -di/dt = 100A/μs, VR= 200V                           2.5                μs<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 1A<br>RG= 5Ω(External)<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b~~2~~<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>~~e~~<br>∅P<br>**TO-247 (IXTH) Outline**<br> **1       2       3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>**gfs**<br>VDS= 50V, ID= 0.5A,  Note 1                           1.0         1.8<br>mS<br>**Ciss**<br>1660<br>pF<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>77<br>pF<br>**Crss**<br>23<br>pF<br>**td(on)**<br> 69<br>ns<br>**tr**<br>25<br>ns<br>**td(off)**<br>132<br>ns<br>**tf**<br>39<br>ns<br>**Qg(on)**<br>41<br>nC<br>**Qgs**<br>VGS= 10V, VDS= 600V, ID= 0.5A<br>8<br>nC<br>**Qgd**<br>16<br>nC<br>**RthJC**<br>0.50 °C/W<br>**RthCS**<br>0.21<br>°C/W<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>**IS**<br>VGS= 0V<br>1.5      A<br>**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>6      A<br>**VSD**<br>IF=  1A, VGS= 0V,  Note 1<br>1.5     V<br>**trr**<br>IF=  1A, -di/dt = 100A/μs, VR= 200V                           2.5                μs<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 1A<br>RG= 5Ω(External)<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b~~2~~<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>~~e~~<br>∅P<br>**TO-247 (IXTH) Outline**<br> **1       2       3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>**gfs**<br>VDS= 50V, ID= 0.5A,  Note 1                           1.0         1.8<br>mS<br>**Ciss**<br>1660<br>pF<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>77<br>pF<br>**Crss**<br>23<br>pF<br>**td(on)**<br> 69<br>ns<br>**tr**<br>25<br>ns<br>**td(off)**<br>132<br>ns<br>**tf**<br>39<br>ns<br>**Qg(on)**<br>41<br>nC<br>**Qgs**<br>VGS= 10V, VDS= 600V, ID= 0.5A<br>8<br>nC<br>**Qgd**<br>16<br>nC<br>**RthJC**<br>0.50 °C/W<br>**RthCS**<br>0.21<br>°C/W<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.      Typ.      Max.**<br>**IS**<br>VGS= 0V<br>1.5      A<br>**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>6      A<br>**VSD**<br>IF=  1A, VGS= 0V,  Note 1<br>1.5     V<br>**trr**<br>IF=  1A, -di/dt = 100A/μs, VR= 200V                           2.5                μs<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 1A<br>RG= 5Ω(External)<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b~~2~~<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>~~e~~<br>∅P<br>**TO-247 (IXTH) Outline**<br> **1       2       3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source|Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b~~2~~<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>~~e~~<br>∅P<br>**TO-247 (IXTH) Outline**<br> **1       2       3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source|Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b~~2~~<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>~~e~~<br>∅P<br>**TO-247 (IXTH) Outline**<br> **1       2       3**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source||
|---|---|---|---|---|---|
|||||||
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**||||
|**IS**<br>VGS= 0V||1.5      A||||
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||6      A||||
|**VSD**<br>IF=  1A, VGS= 0V,  Note 1||1.5     V||||
|**trr**<br>IF=  1A, -di/dt = 100A/μs, VR= 200V|2.5|μs||||



Note       1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

*Additional provisions for lead to lead voltage isolation  are required at VDS > 1200V. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTH1N250** 

**==> picture [254 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2.  Output Characteristics @ TJ = 125ºC<br>1<br> V GS = 10V<br>0.9<br>0.8<br> 5V<br>0.7<br>0.6<br>0.5  4V<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 10 20 30 40 50 60 70 80 90<br>VDS - VoltsDS - Volts - Volts<br> - AmperesIDD<br>IDD<br>**----- End of picture text -----**<br>


**Fig. 1. Output Characteristics @ TJ = @ 25ºC** 

**==> picture [537 x 613] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 1<br> VGS = 10V  V GS = 10V<br>0.9 0.9<br>0.8 5V 0.8  5V<br>0.7 0.7<br>0.6 0.6<br>0.5 0.5  4V<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>4V<br>0.1 0.1<br>0 0<br>0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90<br>VDS - Volts VDS - VoltsDS - Volts - Volts<br>Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.<br>Junction Temperature Drain Current<br>2.6 2.4<br>VGS = 10V  2.2 VGS = 10V<br>2.2<br>2.0 T J  = 125ºC<br>1.8<br>I  D = 1A 1.8<br>1.4 1.6<br>I D = 0.5A<br>1.4<br>1.0<br>1.2<br>TJ = 25ºC<br>0.6<br>1.0<br>0.2 0.8<br>-50 -25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 5. Maximum Drain Current vs.<br>Case Temperature Fig. 6. Input Admittance<br>1.6 0.9<br>1.4 0.8<br>0.7<br>1.2<br>0.6<br>1<br>0.5<br>0.8<br>0.4<br>0.6 TJ = 125ºC  25ºC   - 40ºC<br>0.3<br>0.4<br>0.2<br>0.2 0.1<br>0 0<br>-50 -25 0 25 50 75 100 125 150 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0<br>TC - Degrees Centigrade VGS - Volts<br> - AmperesID  - AmperesIDD<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2012 IXYS CORPORATION, All Rights Reserved 

## **IXTH1N250** 

**==> picture [532 x 427] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Forward Voltage Drop of<br>Fig. 7. Transconductance Intrinsic Diode<br>3 3<br>TJ = - 40ºC<br>2.5 2.5<br>25ºC<br>2 2<br>125 º C<br>1.5 1.5<br>T J = 125ºC<br>1 1<br>TJ  = 25ºC<br>0.5 0.5<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>ID - Amperes VSD - Volts<br>Fig. 9. Gate Charge Fig. 10. Capacitance<br>10 10,000<br>9 V DS = 600V f = 1MHz<br>8 I D = 500mA<br>I G = 10mA<br>7<br>1,000 Ciss<br>6<br>5<br>4 Coss<br>100<br>3<br>2<br>1<br>Crss<br>0 10<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br> - Siemens  - Amperes<br>gf s IS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


## **Fig. 11. Forward-Bias Safe Operating Area @ TC = 25ºC** 

## **Fig. 12. Forward-Bias Safe Operating Area @ TC = 75ºC** 

**==> picture [531 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>RDS(on) Limit RDS(on) Limit<br>25µs<br>100µs 25µs<br>1 1 100µs<br>1ms<br>1ms<br>10ms<br>10ms<br>100ms<br>0.1 0.1 100ms<br>DC<br> TJ = 150ºC  TJ = 150ºC DC<br> TC = 25ºC     TC = 75ºC<br> Single Pulse   Single Pulse<br>0.01 0.01<br>100 1,000 10,000 100 1,000 10,000<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTH1N250** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

**==> picture [526 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC  / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2012 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_1N250 (5P)10-25-10-D 



## Links

- [View this product on Novapart](https://novapart.co/products/IXTH1N250/power-mosfet-n-channel-25-kv-15-a-40-ohm-to-247)
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- [Supplier page](https://es.farnell.com/littelfuse/ixth1n250/mosfet-1-5a-2-5kv-250w-to-247/dp/3930339)
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