# MOSFET, N-CH, 500V, 16A, TO-247

![Product image](https://novapart.co/image/farnell:3949092/)

**URL**: https://novapart.co/products/IXTH16N50D2./mosfet-n-ch-500v-16a-to-247
**SKU**: IXTH16N50D2.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.7700
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:-; Pro

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 695W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 0.3ohm |
| Gate Source Threshold Voltage Max | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949092/)

## **Depletion Mode MOSFET** 

**V =     500V DSX I >     16A D(on) R  300m  DS(on)** 

## **IXTH16N50D2 IXTT16N50D2** 

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**----- Start of picture text -----**<br>
D<br>G TO-247 (IXTH)<br>S<br>G<br>gs D S D (Tab)<br>V<br>V<br>20 V<br>30 V TO-268 (IXTT)<br>W<br>G<br>C<br>C S<br> D (Tab)<br>**----- End of picture text -----**<br>


## **N-Channel** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratingss**|
|---|---|---|---|
|**VDSX**|TJ = 25C to 150C|500|V|
|**VDGX**|TJ = 25C to 150C, RGS= 1M|500|V|
|**VGSX**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**PD**|TC = 25C|695|W|
|**TJ**||- 55 ... +150|CC|
|**TJM**||150|CC|
|**Tstg**||- 55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300||°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-247                                                                                              6                         g|TO-247                                                                                              6                         g|TO-247                                                                                              6                         g|
||TO-268                                                                                               4                         g|TO-268                                                                                               4                         g|TO-268                                                                                               4                         g|



G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

- Normally ON Mode 

- International Standard Packages 

- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVDSX**<br>VGS = - 5V, ID= 250A                                     500|~~—_~~|V|
|**VGS(off)**<br>VDS = 25V, ID= 4mA<br>- 2.0                        - 4.0     V|- 2.0                        - 4.0     V<br>~~—~~|- 2.0                        - 4.0     V|
|**IGSX**<br>VGS =20V, VDS= 0V<br>|<br>~~—~~<br>~~—~~|100<br>nA|
|**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>10<br>TJ= 125C<br>150|10<br>150<br>~~_~~|10<br>A<br>150A|
|**RDS(on)**<br>VGS = 0V, ID= 8A,  Note 1<br>300|300<br>~~_~~<br>~~—~~|300 m|
|**ID(on)**<br>VGS = 0V, VDS= 25V,  Note 1<br>16||A|



## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- Audio Amplifiers 

- Start-up Circuits 

- Protection Circuits 

- Ramp Generators 

- Current Regulators 

- Active Loads 

DS100261C(4/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTH16N50D2 IXTT16N50D2** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|
|---|---|---|---|
|**gfs**<br>VDS= 30V, ID= 8A,  Note 1                             7<br><br>||12<br>|S<br>|
|**Ciss**<br> <br>**Coss**<br>VGS= -10V, VDS=  25V, f = 1MHz<br> <br>**Crss**<br>||5250<br>515<br>130|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS=<br>+5V, VDS= 250V, ID= 8A<br>RG= 3.3(External)||50<br>173<br>203<br>220|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>**Qgs**<br>VGS=<br>**Qgd**|<br> <br>+5V, VDS= 250V, ID= 8A<br> <br>|199<br>18<br>100|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-247||<br>0.21|0.18C/W<br>C/W|



|**Safe-Operating-Area Specification**<br>**Characteristic Values**<br>**Symbol**<br>**Test Conditions**<br>**Min.      Typ.        Max.**|**Safe-Operating-Area Specification**<br>**Characteristic Values**<br>**Symbol**<br>**Test Conditions**<br>**Min.      Typ.        Max.**|**Safe-Operating-Area Specification**<br>**Characteristic Values**<br>**Symbol**<br>**Test Conditions**<br>**Min.      Typ.        Max.**|
|---|---|---|
|**SOA**<br>VDS=  500V, ID= 0.5A, TC= 75C, tp = 5s      250||W|



**TO-247 Outline** 

||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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||||||||**1**|||**2       3**||P|||||||
||||||||||||||||||||
||||||||||||||||||||
|Terminals:||||||||~~e~~<br> 1 - Gate|||||2 - Drain||||||
|||||||||3 - Source|||||||||||
||Dim.||||Millimeter<br>Min.<br>Max.||||||||Inches<br>Min.<br>Max.||||||
|||A<br>A1||||4.7<br>2.2||||5.3<br>2.54|||.185<br>.087|||.209<br>.102|||
|||A2<br>b<br>b1|||2.2<br>1.0<br>1.65|||||2.6<br>1.4<br>2.13|||.059<br>.040<br>.065|||.098<br>.055<br>.084|||
|||b~~2~~|||2.87|||||3.12|||.113|||.123|||
|||C||||||.4||.8|||.016|||.031|||
|||D<br>E|||20.80<br>15.75|||||21.46<br>16.26|||.819<br>.610|||.845<br>.640|||
|||e<br>L|||5.20<br>19.81|||||5.72<br>20.32||0.205 0.225<br>.780<br>.800|||||||
|||L1<br>P|||3.55|||||4.50<br>3.65|||.140|||.177<br>.144|||
|||Q|||5.89|||||6.40||0.232 0.252|||||||
|||R|||4.32|||||5.49|||.170|||.216|||
|||S|||6.15|||||BSC|||242 BSC||||||



## **Source-Drain Diode** 

## **TO-268 Outline** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|
|---|---|---|
|J <br> <br>**VSD**<br>IF=  16A, VGS= -10V,  Note 1<br>**trr**<br> <br>**IRM** <br>**QRM** <br>IF=  8A, -di/dt = 100A/s<br>VR= 100V, VGS= -10V|<br>0.8<br>695<br>20<br>7|<br>1.3     V<br>ns<br>A<br>μC|



Note  1.  Pulse test, t  300s, duty cycle, d  2%. 

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Terminals: 1 - Gate 2 - Drain<br>3 - Source Tab - Drain<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTH16N50D2 IXTT16N50D2** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>16<br>VGS = 5V<br>14          2V<br>         1V<br>12 - 0V<br>10<br>- 0.5V<br>8<br>-1.0V<br>6<br>4 -1.5V<br>2<br>- 2.0V<br>0 - 2.5V<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>16<br>VGS = 5.0V<br>14           1.0V<br>          0.5V<br>             0V<br>12<br>- 0.5V<br>10<br>-1.0V<br>8<br>6 -1.5V<br>4<br>- 2.0V<br>2<br>- 2.5V<br>0 - 3.0V<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 5. Drain Current @ TJ = 100[o] C** 

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**----- Start of picture text -----**<br>
32<br>VGS = 0V<br>28<br>24<br>- 0.4V<br>20<br>16 - 0.8V<br>12<br>- 1.2V<br>8<br>- 1.6V<br>4<br>- 2.0V<br>- 2.4V<br>0<br>0 10 20 30 40 50<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>80<br>VGS = 5V<br>70           3V<br>2V<br>60  1.5V<br>50  1V<br>40<br>0.5V<br>30<br>0V<br>20<br>- 0.5V<br>10 -1V<br>- 2V<br>0<br>0 5 10 15 20 25 30 35<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. Drain Current @ TJ = 25 [o] C<br>32<br>28 V GS = 0V<br>24<br>20 - 0.4V<br>16<br>- 0.8V<br>12<br>- 1.2V<br>8<br>- 1.6V<br>4<br>- 2.0V<br>0 - 2.4V<br>0 10 20 30 40 50<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 6. Dynamic Resistance vs. Gate Voltage** 

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1.E+10<br>1.E+09 ∆VDS = 50V - 25V<br>1.E+08<br>1.E+07<br>1.E+06<br>TJ = 25 [o] C<br>1.E+05<br>TJ = 100 [o] C<br>1.E+04<br>1.E+03<br>1.E+02<br>1.E+01<br>1.E+00<br>-5 -4 -3 -2 -1 0<br>VGS - Volts<br> - Ohms<br>O<br>R<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTH16N50D2 IXTT16N50D2** 

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**----- Start of picture text -----**<br>
Fig. 8. RDS(on) Normalized to ID = 8A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>2.5 4<br> V GS  = 0V  VGS = 0V<br>3.5<br> I  D   = 8A                5V<br>2.0 3<br>2.5<br>TJ = 125 [o] C<br>1.5 2<br>1.5<br>1.0 1<br>0.5 T J  = 25 [o] C<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50<br>TJ - Degrees Centigrade ID - Amperes<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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Fig. 9. Input Admittance<br>50<br>V DS  = 30V<br>40<br>30<br>T J = 125 [o] C<br>         25 [o] C<br>20<br>       - 40 [o] C<br>10<br>0<br>-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0<br>VGS - Volts<br>Fig. 11. Breakdown and Threshold Voltages<br>vs. Junction Temperature<br>1.3<br>1.2<br>VGS(off) @ VDS = 25V<br>1.1<br>BVDSX @ VGS = - 5V<br>1.0<br>0.9<br>0.8<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>GS(off)<br>BV / V<br>**----- End of picture text -----**<br>


**Fig. 10. Transconductance** 

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**----- Start of picture text -----**<br>
30<br>V DS  = 30V  T J = - 40 [o] C, 25 [o] C, 125 [o] C<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>30<br>VGS = -10V<br>25<br>20<br>15<br>TJ = 125 [o] C<br>10<br>TJ = 25 [o] C<br>5<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTH16N50D2 IXTT16N50D2** 

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**----- Start of picture text -----**<br>
Fig. 13. Capacitance Fig. 14. Gate Charge<br>100,000 5<br>f = 1 MHz  4  VDS = 250V<br> I D = 8A<br>3<br>10,000 Ciss  I G = 10mA<br>2<br>1<br>1,000 Coss 0<br>-1<br>-2<br>100<br>Crss -3<br>-4<br>10 -5<br>0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 160 180 200<br>VDS - Volts QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area<br>@ TC = 25 [o] C @ TC = 75 [o] C<br>100 100<br>RDS(on) Limit RDS(on) Limit<br>25μs<br>25μs<br>100μs<br>10 10 100μs<br>1ms<br>1ms<br>10ms<br>1 100ms 1 10ms<br>10.0 00<br>Fig. 17. Maximum Transient Thermal Impedance DC 100ms<br>T J = 150 [o] C TJ = 150 [o] C DC<br>T C  = 75 [o] C<br>TC = 25 [o] C    Single Pulse<br>Single Pulse<br>0.1 0.1<br>10 100 1,000 10 100 1,000<br>1.000 VDS - Volts VDS - Volts<br>      Fig. 17. Maximum Transient Thermal Impedance<br>hvjv<br>0.300<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - AmperesID  - AmperesID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_16N50D2(8C)4-08-10 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

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- [Supplier page](https://es.farnell.com/littelfuse/ixth16n50d2/mosfet-n-ch-500v-16a-to-247/dp/3949092)
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