# MOSFET, N-CH, 100V, 160A, TO-247
**URL**: https://novapart.co/products/IXTH160N10T./mosfet-n-ch-100v-160a-to-247
**SKU**: IXTH160N10T.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.0100
**Stock**: 10+
**Lead Time**: 207 days (indicative)
## Description
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:160A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | TrenchMV Series |
| Qualification | - |
| Power Dissipation | 430W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 0.0058ohm |
| Gate Source Threshold Voltage Max | 4.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3949093/)
Preliminary Technical Information
## **TrenchMV[TM] Power MOSFET**
## **IXTH160N10T IXTQ160N10T**
## **V = 100 V DSS I = 160 A D25 R ≤ 7.0 m Ω DS(on)**
N-Channel Enhancement Mode Avalanche Rated
|N-Channel Enhancement Mode
Avalanche Rated|N-Channel Enhancement Mode
Avalanche Rated||||**TO-247 (IXTH)**|**TO-247 (IXTH)**|**TO-247 (IXTH)**||||
|---|---|---|---|---|---|---|---|---|---|---|
|||||G|||||||
|**Symbol**
**Test Conditions**
**VDSS**
TJ = 25°C to 175°C
~~—_—_—_—_————___ .....~~||—nmnXnsX—sSswyxyyyl|**Maximum Ratings**
100
V
s
~~$$$~~|||G
D S
/
ois
aae
SeaeSe
orae||(TAB)|||
|**VDGR**|TJ = 25°C to 175°C; RGS= 1 MΩ||100|V|||||||
|**VGSM**|Transient||±30|V|**TO-3P (IXTQ)**||||||
|**ID25**|TC = 25°C||160|A|||||||
|ILRMS
**IDM**
**IAR**
**EAS**|Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C||75
430
25
500|A
A
A
mJ|||j|||||
|||||||G|||||
|**dv/dt**|IS
≤IDM, di/dt≤100 A/μs, VDD|≤VDSS|3|V/ns||S
D||(TAB)|(TAB)|(TAB)|
||TJ ≤175°C, RG= 5Ω||||||||||
|**PD**|TC = 25°C||430|W|G = Gate
S = Source||D = Drain
TAB = Drain||||
|**TJ**|||-55 ... +175|°C|||||||
|**TJM**|||175|°C|||||||
|**Tstg**|||-55 ... +175|°C|**Features**||||||
|**TL**
**TSOLD**|1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds|1.6 mm (0.062 in.) from case for 10 s|300
260|°C
°C|e
e|Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated|||Unclamped Inductive Switching (UIS)|Unclamped Inductive Switching (UIS)|
|**Md**|Mounting torque||1.13 / 10|Nm/lb.in.|e|Low package inductance|||||
|**Weight**|TO-3P
TO-247||5.5
6|g
g|e|- easy to drive and to protect
175°C Operating Temperature|||||
G D (TAB) S G = Gate D = Drain S = Source TAB = Drain
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
## **Advantages**
Easy to mount Space savings High power density
|||||**Advantages**
Easy to mount
Space savings
High power density
e
e
e|
|---|---|---|---|---|
|**Symbol**|**Test Conditions**||**Characteristic Values**|High power density|
|(TJ= 25°C unless otherwise specified)
**BVDSS**|C unless otherwise specified)
VGS = 0 V, ID= 250μA||**Min. Typ.**
**Max.**
100
V
~~||~~|**Applications**
Automotive
- Motor Drives|
|**VGS(th)**|VDS = VGS, ID= 250μA||2.5
4.5
V|- 42V Power Bus|
|**IGSS**
**IDSS**
**RDS(on)**|VGS =±20 V, VDS= 0 V
VDS = VDSS
VGS= 0 V
VGS = 10 V, ID= 25 A, Notes 1, 2|TJ= 150°C
= 25 A, Notes 1, 2|±200
nA
5
μA
250
μA
5.8
7.0
mΩ
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
~~|~~
:
~~7|~~
~~|~~
e||
|||||High Current Switching
e|
|||||Applications|
|||||High Voltage Synchronous Recifier
e|
Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS : Primary Switch for 24V and 48V Systems
DS99710 (11/06)
© 2006 IXYS CORPORATION All rights reserved
**IXTH160N10T IXTQ160N10T**
||||||**IXTH160N10T**
**IXTQ160N10T**|**IXTH160N10T**
**IXTQ160N10T**|
|---|---|---|---|---|---|---|
|**Symbol**
**Test Conditions Characteristic Values**
(TJ= 25°C unless otherwise specified)
**Min.**
**Typ.**
**Max.**
**gfs**
VDS= 10 V; ID= 60 A, Note 1
65
102
S
**Ciss**
6600
pF
**Coss**
VGS= 0 V, VDS= 25 V, f = 1 MHz
880
pF
**Crss**
135
pF
**td(on)**
**Resistive Switching Times**
33
ns
**tr**
VGS= 10 V, VDS= 0.5 VDSS, ID= 25 A
61
ns
**td(off)**
RG= 5Ω(External)
49
ns
**tf**
42
ns
**Qg(on)**
132
nC
**Qgs**
VGS= 10 V, VDS= 0.5 VDSS, ID= 25 A
37
nC
**Qgd**
40
nC
**RthJC**
0.35°C/W
**RthCH**
0.25
°C/W
**Source-Drain Diode**
**Symbol**
**Test Conditions**
**Characteristic Values**
TJ= 25°C unless otherwise specified)
**Min.**
**Typ.**
**Max.**
**IS**
VGS= 0 V
160
A|||||**TO-247 AD Outline**
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A1
2.2
2.54
.087
.102
A2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b1
1.65
2.13
.065
.084
b2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3||
|**IS**
VGS= 0 V|||||||
|**ISM**
Pulse width limited by TJM|||43|0
A
.0
V
ns|R
4.32
S
6.15 B|5.49
.170
.216
SC
242 BSC|
|**VSD**
IF= 25 A, VGS= 0 V, Note 1|||1||||
||||||**TO-3P (IXTQ) Ou**|**tline**|
|**trr**
IF= 25 A, -di/dt = 100 A/μs
V**R**= 50 V, V**GS**= 0 V||100|||||
|Notes: 1.Pulse test, t≤300μs, duty cycle d≤2 %;
2. On through-hole packages, RDS(on)Kelvin test contact
location must be 5 mm or less from the package body.|||||||
||||||||
||||||Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain||
|**PRELIMINARY T**
The product presented herein is under
offered are derived from data gathere
engineering lots; but also may yet con
production design evaluation. IXYS r
and dimensions without notice.|||||||
|IXYS reserves the right to change limits,|||||||
|IXYS MOSFETs and IGBTs are covered by
4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106|||||||
**==> picture [108 x 16] intentionally omitted <==**
**----- Start of picture text -----**
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
**----- End of picture text -----**
## **PRELIMINARY TECHNICAL INFORMATION**
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
**==> picture [129 x 144] intentionally omitted <==**
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505
6,683,344 6,727,585 7,005,734 B2 6,710,405B2 6,759,692 7,063,975 B2 6,710,463 6771478 B2 7,071,537
**IXTH160N10T IXTQ160N10T**
**==> picture [506 x 227] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
160 300
VGS = 10V 275 VGS = 10V
140 9V 9V
8V 250 8V
120 225
200
100
175
7V 7V
80 150
125
60
100
6V
40 75
50 6V
20
5V 25
0 0
0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6 7 8
VDS - Volts VDS - Volts
- Amperes - Amperes
ID ID
**----- End of picture text -----**
**Fig. 3. Output Characteristics @ 150ºC**
**==> picture [238 x 416] intentionally omitted <==**
**----- Start of picture text -----**
160
VGS = 10V
140 8V
120
100 7V
80
6V
60
40
20
5V
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 80A Value
vs. Drain Current
3.2
3 VGS = 10V
2.8 15V - - - -
2.6 T J = 175ºC
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25ºC
1
0.8
0.6
0 50 100 150 200 250 300
ID - Amperes
- Amperes
ID
- Normalized
DS(on)
R
**----- End of picture text -----**
**Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature**
**==> picture [240 x 415] intentionally omitted <==**
**----- Start of picture text -----**
2.8
2.6 VGS = 10V
2.4
2.2
I D = 160A
2
I D = 80A
1.8
1.6
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
140
External Lead Current Limit for TO-263 (7-Lead)
120
100
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
- Normalized
DS(on)
R
- Amperes
ID
**----- End of picture text -----**
© 2006 IXYS CORPORATION All rights reserved
**IXTH160N10T IXTQ160N10T**
**==> picture [506 x 226] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 7. Input Admittance Fig. 8. Transconductance
200 140
180
120 TJ = - 40ºC
160
140 100 25ºC
120
80
100 150ºC
60
80
60 25ºCTJ = 150ºC 40
40 - 40ºC
20
20
0 0
3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 60 80 100 120 140 160 180 200 220
VGS - Volts ID - Amperes
- Amperes - Siemens
ID gf s
**----- End of picture text -----**
**Fig. 9. Forward Voltage Drop of Intrinsic Diode**
**Fig. 10. Gate Charge**
**==> picture [503 x 419] intentionally omitted <==**
**----- Start of picture text -----**
300 10
9 VDS = 50V
250 I D = 25A
8
I G = 10mA
7
200
6
150 5
TJ = 150ºC 4
100
T J = 25ºC 3
2
50
1
0 0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20 40 60 80 100 120 140
VSD - Volts QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Fig. 11. Capacitance
Impedance
10,000 1.00
Ciss
f = 1 MHz
1,000 Coss 0.10
Crss
100 0.01
0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10
VDS - Volts Pulse Width - Seconds
- Volts
GS
- AmperesIS V
- ºC / W
(th)JC
Z
Capacitance - PicoFarads
**----- End of picture text -----**
IXYS reserves the right to change limits, test conditions, and dimensions.
## **IXTH160N10T IXTQ160N10T**
**Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature**
**==> picture [235 x 194] intentionally omitted <==**
**----- Start of picture text -----**
90
RG = 5 Ω
80
VGS = 10V
VDS = 50V
70
60
50
I D = 50A
40
I D = 25A
30
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
- Nanosecondsr
t
**----- End of picture text -----**
**Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance**
**==> picture [235 x 427] intentionally omitted <==**
**----- Start of picture text -----**
170 65
t r td(on) - - - -
150 TJ = 125ºC, VGS = 10V 60
VDS = 50V
130 I D = 50A 55
110 50
I D = 25A
90 45
70 40
50 35
30 30
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
44 80
t f td(off) - - - - 77
RG = 5 Ω , VGS = 10V
43 TJ = 125ºC VDS = 50V 74
71
42 68
TJ = 25ºC 65
41 62
59
40 T J = 125ºC 56
53
39 50
TJ = 25ºC 47
38 44
25 30 35 40 45 50
ID - Amperes
t
d ( o n )
- Nanoseconds
t r
- Nanoseconds
d ( o f f )t
t - Nanoseconds f
- Nanoseconds
**----- End of picture text -----**
© 2006 IXYS CORPORATION All rights reserved
**Fig. 14. Resistive Turn-on Rise Time vs. Drain Current**
**==> picture [233 x 194] intentionally omitted <==**
**----- Start of picture text -----**
70
65 TJ = 25ºC
60
RG = 5 Ω
55
VGS = 10V
50 VDS = 50V
45
40
TJ = 125ºC
35
30
25 30 35 40 45 50
ID - Amperes
- Nanosecondsr
t
**----- End of picture text -----**
**Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature**
**==> picture [237 x 427] intentionally omitted <==**
**----- Start of picture text -----**
90 120
85 t f td(off) - - - - 115
80 R G = 5 Ω , V GS = 10V 110
75 I D = 25A VDS = 50V 105
70 100
65 I D = 50A 95
60 90
55 85
50 80
I D = 25A
45 75
40 70
35 I D = 50A 65
30 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
140 205
130 t f td(off) - - - - 190
120 TJ = 125ºC, VGS = 10V I D = 25A 175
VDS = 50V
110 160
100 145
90 I D = 50A 130
80 115
70 100
60 85
50 70
40 55
30 40
4 6 8 10 12 14 16 18 20
RG - Ohms
d ( o f f )t
- Nanoseconds
t f
- Nanoseconds
d ( o f f )t
- Nanoseconds
t f
- Nanoseconds
**----- End of picture text -----**
IXYS REF: T_160N10T (5V) 11-16-06-A.xls
**==> picture [157 x 46] intentionally omitted <==**
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
## Links
- [View this product on Novapart](https://novapart.co/products/IXTH160N10T./mosfet-n-ch-100v-160a-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixth160n10t/mosfet-n-ch-100v-160a-to-247/dp/3949093)
---
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