# Power MOSFET, N Channel, 1 kV, 10 A, 1.5 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930489/)

**URL**: https://novapart.co/products/IXTH10N100D2/power-mosfet-n-channel-1-kv-10-a-15-ohm-to-247
**SKU**: IXTH10N100D2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €10.1200
**Stock**: 200+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 695W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 1.5ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930489/)

## Preliminary Technical Information ~~Mi~~ lLX Ys Po **Depletion Mode IXTH10N100D2 MOSFET** 

**V =     1000V DSX I >     10A D(on) R  1.5  DS(on)** 

## **IXTH10N100D2 IXTT10N100D2** 

## **N-Channel** 

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**----- Start of picture text -----**<br>
D<br>TO-247 (IXTH)<br>G<br>S<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSX**|TJ = 25C to 150C|1000|V|
|**VDGX**|TJ = 25C to 150C, RGS= 1M|1000|V|
|**VGSX**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**PD**|TC = 25C|695|W|
|**TJ**||- 55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||- 55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300||°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-247                                                                                              6                         g|TO-247                                                                                              6                         g|TO-247                                                                                              6                         g|
||TO-268                                                                                               4                         g|TO-268                                                                                               4                         g|TO-268                                                                                               4                         g|



## **TO-268 (IXTT)** 

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**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

- Normally ON Mode 

- International Standard Packages 

- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|**BVDSX**<br>VGS = - 5V, ID= 250A                                    1000|~~|~~|V|
|**VGS(off)**<br>VDS = 25V, ID= 1mA<br>- 2.5                         - 4.5     V<br>~~|~~|- 2.5                         - 4.5     V<br>~~|~~<br>~~|~~|- 2.5                         - 4.5     V|
|**IGSX**<br>VGS =20V, VDS= 0V<br><br>~~|~~|<br>~~|~~<br>~~|~~|100<br>nA|
|**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>10<br>TJ= 125C<br>250<br>~~|~~<br>~~|~~|10<br>250<br>~~|_~~<br>~~|~~|10<br>A<br>250A|
|**RDS(on)**<br>VGS = 0V, ID= 5A,  Note 1<br>1.5<br><br>~~|~~|1.5<br>~~_~~<br>~~|~~|1.5<br>|
|**ID(on)**<br>VGS = 0V, VDS= 25V,  Note 1<br>10<br>~~|~~|~~|~~|A|



## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- Audio Amplifiers 

- Start-up Circuits 

- Protection Circuits 

- Ramp Generators 

- Current Regulators 

- Active Loads 

DS100326A(4/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTH10N100D2 IXTT10N100D2** 

|**Symbol**<br>**Test Conditions**<br>(TJ= 25C, Unless Otherwise Specified)|**Symbol**<br>**Test Conditions**<br>(TJ= 25C, Unless Otherwise Specified)|**Characteristic Values**<br>**Min.      Typ.      Max.**|**Characteristic Values**<br>**Min.      Typ.      Max.**|**Characteristic Values**<br>**Min.      Typ.      Max.**|**Characteristic Values**<br>**Min.      Typ.      Max.**|**Characteristic Values**<br>**Min.      Typ.      Max.**||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfs**|VDS= 30V, ID= 5A,  Note 1|11||17|||S|||||||||||||||||||
|**Ciss**|||5320||||pF|||||||||||||||||||
|**Coss**<br>**Crss**|VGS= -10V, VDS=  25V, f = 1MHz|<br>|<br>|300<br>70|||pF<br>pF||||||||**1**|||**2       3**|P|||||||
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive Switching Times**<br>VGS=<br>+5V, VDS= 500V, ID= 5A<br>RG= 3.3(External)|<br> <br> <br>|<br> <br> <br>|33<br>36<br>33<br>164|||ns<br>ns<br>ns<br>ns|Terminals:||||||||~~e~~<br> 1 - Gate|||2 - Drain|||||||
|**Qg(on)**||||200|||nC|||||||||3 - Source||||||||||
|**Qgs**|VGS=<br>+5V, VDS= 500V, ID= 5A|||19|||nC||Dim.||||Millimeter<br>Min.<br>Max.||||||Inches<br>Min.<br>Max.|||||||
|**Qgd**||||98|||nC|||A<br>A1||||4.7<br>2.2||||5.3<br>2.54|.185<br>.087|||.209<br>.102||||
|**RthJC**<br>**RthCS**|TO-247|<br>|<br>|<br>0.21||0.18C/W<br>C/W||||A2<br>b<br>b1|||2.2<br>1.0<br>1.65|||||2.6<br>1.4<br>2.13|.059<br>.040<br>.065|||.098<br>.055<br>.084||||
|||||||||||b~~2~~|||2.87|||||3.12|.113|||.123||||
|||||||||||C||||||.4||.8|.016|||.031||||
|**Safe-Operating-Area Specification**<br>||**Characteristic Values**||||||||D<br>E|||20.80<br>15.75|||||21.46<br>16.26|.819<br>.610|||.845<br>.640||||
|**Symbol**|**Test Conditions**|**Min.**||**Typ.**||**Max.**||||e<br>L|||5.20<br>19.81|||||5.72<br>20.32|0.205 0.225<br>.780<br>.800|||||||
|**SOA**|VDS=  800V, ID= 0.22A, TC= 75C, tp =|5s      176|||||W|||L1<br>P|||3.55|||||4.50<br>3.65|.140|||.177<br>.144||||
|||||||||||Q|||5.89|||||6.40|0.232 0.252|||||||
|**Source-Drain Diode**||||||||||R|||4.32|||||5.49|.170|||.216||||
|**Symbol**|**Test Conditions**|**Characteristic Values**||||||||S|||6.15|||||BSC|242 BSC|||||||



|||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||
|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Min.      Typ.**||**Max.**||
|**SOA**|VDS=  800V, ID= 0.22A, TC= 75C, tp =|5s      176|||W|
|**Source-Drain Diode**||||||
|**Symbol**|**Test Conditions**|**Characteristic Values**||||
|(TJ= 25C, Unless Otherwise Specified)||**Min.      Typ.**||**Max.**||
|**VSD**|IF=  10A, VGS= -10V,  Note 1|0.8||1.3|V|
|**trr**<br>**IRM**<br>**QRM**|<br>  <br>IF=  5A, -di/dt = 100A/s<br>VR= 100V, VGS= -10V|1.2<br> 23<br>13.8|<br>|<br>|μs<br>A<br>μC|



## **TO-268 Outline** 

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Note  1.  Pulse test, t  300s, duty cycle, d  2%. 

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**----- Start of picture text -----**<br>
Terminals: 1 - Gate 2,4  - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTH10N100D2 IXTT10N100D2** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>10 24<br>V GS = 5V VGS = 5V<br>9           1V               2V<br>20             1V<br>8<br>0V<br>7<br>16<br> 0V<br>6 -1V<br>5 12<br>4<br> -1V<br>8<br>3<br>2 - 2V<br>4<br>1  - 2V<br>- 3V<br>0 0 - 3V<br>0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C Fig. 4. Drain Current @ TJ = 25 [o] C<br>10 1.E-01<br>VGS = 5V VGS =<br>9           0V    - 3.25V<br>1.E-02<br>8 - 3.50V<br>7 -1V 1.E-03<br>- 3.75V<br>6<br>1.E-04<br>5 - 4.00V<br>1.E-05<br>4<br>- 4.25V<br>- 2V<br>3<br>1.E-06<br>- 4.50V<br>2<br>1.E-07 - 4.75V<br>1<br>- 3V - 5.00V<br>0 1.E-08<br>0 4 8 12 16 20 24 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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Fig. 5. Drain Current @ TJ = 100 [o] C<br>1.E-01<br>VGS = - 3.50V<br>1.E-02<br>- 3.75V<br>1.E-03 - 4.00V<br>- 4.25V<br>1.E-04<br>- 4.50V<br>1.E-05 - 4.75V<br>- 5.00V<br>1.E-06<br>0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts<br> - Ampere<br>ID<br>**----- End of picture text -----**<br>


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Fig. 6. Dynamic Resistance vs. Gate Voltage<br>1.E+11<br>∆VDS = 700V - 100V<br>1.E+10<br>1.E+09<br>1.E+08 TJ = 25 [o] C<br>1.E+07<br>TJ = 100 [o] C<br>1.E+06<br>1.E+05<br>1.E+04<br>-5.0 -4.8 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2<br>VGS - Volts<br> - Ohms<br>O<br>R<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTH10N100D2 IXTT10N100D2** 

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**----- Start of picture text -----**<br>
Fig. 8. RDS(on) Normalized to ID = 5A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>2.6 2.6<br>V GS  = 0V  VGS = 0V<br>2.2 I D > 5A                 5V<br>2.2<br>1.8 T J  = 125 [o] C<br>1.8<br>1.4<br>1.4<br>1.0<br>1.0<br>0.6<br>TJ = 25 [o] C<br>0.2 0.6<br>-50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 24<br>TJ - Degrees Centigrade ID - Amperes<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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Fig. 9. Input Admittance<br>16<br>VDS = 30V<br>14<br>12<br>T J = 125 [o] C<br>10          25 [o] C<br>- 40 [o] C<br>8<br>6<br>4<br>2<br>0<br>-4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 10. Transconductance** 

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**----- Start of picture text -----**<br>
16<br>VDS = 30V<br>14<br>TJ = - 40 [o] C<br>12<br>25 [o] C<br>10<br>125 [o] C<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 11. Normalized Breakdown and Threshold<br>Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>Voltages vs. Junction Temperature<br>1.3 30<br>V GS  = -10V<br>25<br>1.2<br>VGS(off) @ VDS = 25V 20<br>1.1<br>15<br>BVDSX @ VGS = - 5V<br>1.0 T J = 125 [o] C<br>10<br>TJ = 25 [o] C<br>0.9<br>5<br>0.8 0<br>-50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9<br>TJ - Degrees Centigrade VSD - Volts<br>GS(off)  - Amperes<br>BV / V IS<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXTH10N100D2 IXTT10N100D2** 

**==> picture [536 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Capacitance Fig. 14. Gate Charge<br>100,000 5<br>f = 1 MHz  4  VDS = 500V<br> I  D  = 5A<br>3<br>10,000 Ciss 2  I  G  = 10mA<br>1<br>1,000 0<br>Coss -1<br>-2<br>100<br>-3<br>Crss -4<br>10 -5<br>0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 160 180 200<br>VDS - Volts QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area<br>@ TC = 25 [o] C @ TC = 75 [o] C<br>100 100<br>RDS(on) Limit R DS(on)  Limit<br>25μs<br>10 100μs 10 25μs<br>100μs<br>1ms<br>1ms<br>1 1<br>10ms<br>TJ = 150 [o] C TJ = 150 [o] C 10ms<br>Single Pulse TC = 25 [o] C    DC 100ms Single Pulse TC = 75 [o] C    100ms<br>0 Fig. 17. Maximum Transient T 0 hermal Impedance DC<br>10 100 1,000 10 100 1,000<br>1 VDS - Volts VDS - Volts<br>      Fig. 17. Maximum Transient Thermal Impedance<br>hvjv<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - Amperes  - Amperes<br>ID ID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_10N100D2(8C)04-06-11 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixth10n100d2/mosfet-10a-1kv-695w-to-247/dp/3930489)
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