# Power MOSFET, N Channel, 2.5 kV, 200 mA, 450 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930077/)

**URL**: https://novapart.co/products/IXTH02N250/power-mosfet-n-channel-25-kv-200-ma-450-ohm-to-247
**SKU**: IXTH02N250
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €7.9900
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 2.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 450ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930077/)

## **High Voltage Power MOSFETs** 

## **IXTH02N250 IXTV02N250S** 

**V =    2500V DSS I =    200mA D25 R ≤ 450 Ω DS(on)** 

N-Channel Enhancement Mode Fast Intrinsic Diode 

## **TO-247 (IXTH)** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|2500|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|2500|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|200|mA|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|600|mA|
|**PD**|TC = 25°C|83|W|
|**TJ**||- 55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||- 55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in|
|**FC**|Mounting Force (PLUS220)                      11..65 / 25..14.6|Mounting Force (PLUS220)                      11..65 / 25..14.6|N/lb.|
|**Weight**|**Weight**TO-247                                                                                 6                      g|TO-247                                                                                 6                      g|TO-247                                                                                 6                      g|
|PLUS220                                                                                                     4                            g|PLUS220                                                                                                     4                            g|PLUS220                                                                                                     4                            g|PLUS220                                                                                                     4                            g|



**==> picture [86 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


## **PLUS220SMD (IXTV_S)** 

**==> picture [123 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>G  = Gate D       =  Drain<br>S  = Source Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

Fast Intrinsic Diode Low Package Inductance 

## **Advantages** 

Easy to Mount Space Savings 

|(T= 25C, Unless Otherwise Specified)**Min.       Typ.      Max.**|**Min.       Typ.      Max.**<br>~~—_~~|**Min.       Typ.      Max.**<br>~~—_~~|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)**Min.       Typ.      Max.**|**Min.       Typ.      Max.**<br>~~—_~~|**Min.       Typ.      Max.**<br>~~—_~~|
|**BVDSS**<br>VGS = 0V, ID=  250μA<br>2500<br>~~|~~|~~—_~~<br>~~||~~|V<br>~~—_~~|
|**VGS(th)**<br>VDS = VGS, ID=  250μA<br>2.5                          4.5     V<br>~~|~~<br>~~|~~|2.5                          4.5     V<br>~~—_~~<br>~~||~~<br>~~|~~|2.5                          4.5     V<br>~~—_~~|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|~~<br>~~|~~|±<br>~~| |~~<br>~~|~~|±100<br>nA|
|**IDSS**<br>VDS =  0.8 • VDSS, VGS= 0V<br>5<br>TJ= 125°C<br>500<br>~~|~~<br>~~|~~|5<br>500<br>~~|~~<br>~~|~~<br>~~|~~|5<br>μA<br>500μA|
|**RDS(on)**<br>VGS = 10V, ID= 50mA, Note 1<br>450<br>~~|~~|450<br>~~|~~<br>~~|~~|450<br>Ω|



DS100187E(04/13) 

© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXTH02N250 IXTV02N250S** 

|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**<br>~~—~~|
|---|---|---|
|**gfs**VDS= 100V, ID= 0.5 • ID25,  Note 1                    88         145                  mS<br>**C**<br>116||,  Note 1                    88         145                  mS<br>116<br>~~—~~|
|**Ciss**<br>**Coss**<br>**Crss**|116<br>VGS= 0V, VDS=  25V, f = 1MHz<br>8<br>3                   pF|116<br>8<br>3                   pF|
|**rss**<br>**td(on)**<br> <br>**tr**<br>19<br>**td(off)**<br>32<br>**tf**<br>33<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 100Ω(External)||19                    ns<br>19<br>32 ns<br>33|
|**Qg(on)**<br>7.4<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>0.7<br>**Qgd**<br>5.3||7.4<br>0.7<br>5.3|
|**RthJC**<br>1.5<br>**RthCS**0.25||1.5<br>0.25|



## **Source-Drain Diode** 

|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|---|---|
|**IS**<br>VGS= 0V<br>200  mA|200  mA|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|800  mA|
|**VSD**<br>IF=  100mA, VGS= 0V,  Note 1|2.0     V|
|**trr**<br> <br>IF= 200mA, -di/dt = 50A/μs,VR= 100V|1.5μs|



Note       1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

*Additional provisions for lead to lead voltage isolation  are required at VDS > 1200V. 

|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|**TO-247 Outline**<br>Ate<br>~~E~~<br>~~A~~2<br>~~aeoenra~~l<br>~~+ eS~~<br>~~A~~<br>~~Ques~~|
|---|---|---|---|---|---|---|---|---|---|---|
|**1       2       3**<br>~~a~~<br>~~_~~<br>||||**1       2       3**||**1       2       3**|∅P|||||
|||»E|||e<br> ~~”~~||||I||
|Terminals: 1 - Gate<br>3 - Source|||1 - Gate<br>3 - Source|1 - Gate<br>3 - Source||2 - Drain|||||
|Dim.||Millimeter<br>Min.<br>Max.||||Inches<br>Min.<br>Max.|||||
|A||4.7|||5.3|.185||.209|||
|A1<br>A2||2.2<br>2.2|||2.54<br>2.6|.087<br>.059||.102<br>.098|||
|b<br>b1||1.0<br>1.65|||1.4<br>2.13|.040<br>.065||.055<br>.084|||
|b~~2~~||2.87|||3.12|.113||.123|||
|C||.4|||.8|.016||.031|||
|D||20.80|||21.46|.819||.845|||
|E||15.75|||16.26|.610||.640|||
|e||5.20|||5.72|0.205|0.225||||
|L<br>L1||19.81|||20.32<br>4.50|.780||.800<br>.177|||
|∅P||3.55|||3.65|.140||.144|||
|Q<br>R||5.89<br>4.32|||6.40<br>5.49|0.232 <br>.170|0.252<br>.216||||
|S||6.15||BSC||242|BSC||||



## **PLUS220SMD Outline** 

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**----- Start of picture text -----**<br>
E1E L2 A1A E1<br>[= S10 r s k O r<br>D<br>A3<br>L3<br>L L4<br>L1 “hot Re<br>e aaj 2X b c {<br>A2<br>1. Gate      2. Drain<br>3. Source  4. Drain<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTH02N250 IXTV02N250S** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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200<br>VGS = 10V 400 VGS = 10V<br>           7V             8V<br>350<br>150<br>6V<br>300 7V<br>250<br>100<br>200<br>6V<br>150<br>5V<br>50 100<br>5V<br>50<br>4V<br>4V<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400<br>VDS - Volts VDS - Volts<br> - MilliAmperes  - MilliAmperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
200 3.0<br>V           7V GS = 10V  V GS = 10V<br>2.6<br>150 6V<br>2.2 I  D  = 200mA<br>1.8<br>100 I  D = 100mA<br>5V<br>1.4<br>1.0<br>50<br>4V<br>0.6<br>0 0.2<br>0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>3.4<br>VGS = 10V  200<br>3.0<br>2.6 T J  = 125ºC 160<br>2.2<br>120<br>1.8<br>80<br>TJ = 25ºC<br>1.4<br>40<br>1.0<br>0.6 0<br>0 50 100 150 200 250 300 350 400 -50 -25 0 25 50 75 100 125 150<br>ID - MilliAmperes TC - Degrees Centigrade<br> - Normalized<br> - MilliAmperes<br>ID DS(on)<br>R<br> - Normalized<br> - MilliAmperes<br>RDS(on) ID<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

**IXTH02N250 IXTV02N250S** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>350<br>300<br>250<br>200 T J = 125ºC<br>          25ºC<br>- 40ºC<br>150<br>100<br>50<br>0<br>2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - MilliAmperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>300<br>TJ = - 40ºC<br>250<br>200<br>25ºC<br>150 125ºC<br>100<br>50<br>0<br>0 50 100 150 200 250 300 350<br>ID - MilliAmperes<br> - MilliSiemens<br>f s<br>g<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
800<br>700<br>600<br>500<br>T J = 125ºC<br>400<br>TJ  = 25ºC<br>300<br>200<br>100<br>0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VSD - Volts<br> - MilliAmperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [248 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9  V DS = 1000V<br> I D = 100mA<br>8  I G = 1mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7 8<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [527 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000 10<br>f = 1 MHz<br>Ciss<br>100 1<br>Coss<br>10 0.1<br>Crss<br>1 0.01<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTH02N250 IXTV02N250S** 

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**----- Start of picture text -----**<br>
Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area<br> @ TC = 25ºC  @ TC = 75ºC<br>1,000 1,000<br>RDS(on) Limit 25µs R DS(on)  Limit<br>25µs<br>100µs<br>100µs<br>1ms<br>100 100<br>1ms<br>10ms<br>100ms 10ms<br> TJ = 150ºC DC  TJ = 150ºC 100ms<br> TC = 25ºC     TC = 75ºC<br> Single Pulse   Single Pulse<br>DC<br>10 10<br>100 1,000 10,000 100 1,000 10,000<br>VDS - Volts VDS - Volts<br> - MilliAmperes  - MilliAmperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_02N250(2P)04-19-12 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

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- [Supplier page](https://es.farnell.com/littelfuse/ixth02n250/mosfet-0-2a-2-5kv-83w-to-247-3/dp/3930077)
---

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