# MOSFET, N-CH, 150V, 62A, TO-263

![Product image](https://novapart.co/image/farnell:3949087/)

**URL**: https://novapart.co/products/IXTA62N15P./mosfet-n-ch-150v-62a-to-263
**SKU**: IXTA62N15P.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9700
**Stock**: 10+
**Lead Time**: 298 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:62A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | PolarHT Series |
| Qualification | - |
| Power Dissipation | 350W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 62A |
| Drain Source On State Resistance | 33mohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949087/)

**PolarHT[TM] IXTA 62N15P VDSS =   150 V IXTP 62N15P I =     62 A Power MOSFET D25 IXTQ 62N15P R ≤ 40 m Ω DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>150<br>V<br>**VDGR**<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>150<br>V<br>~~———_~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>150<br>V<br>**VDGR**<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>150<br>V<br>~~———_~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>150<br>V<br>**VDGR**<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>150<br>V<br>~~———_~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>150<br>V<br>**VDGR**<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>150<br>V<br>~~———_~~|**TO-263 (IXTA)**|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*|**TO-263 (IXTA)**<br>G<br>S<br>(TAB)<br>*||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**VGS**|Continuous|±20|V|||||||||||||
|**VGSM**|Transient|±30|V|**TO-220 (IXTP)**|**TO-220 (IXTP)**|||||||||||
|**ID25**<br>TC = 25°C<br>62<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>150<br>A<br>**IAR**<br>TC = 25°C<br>50<br>A<br>**EAR**<br>TC = 25°C<br>30<br>mJ<br>D<br>(TAB)<br>G<br>S<br>~~OR~~||||||||||||||||
|**EAS**|TC = 25°C|1.0|J|**TO-3P (IXTQ)**||||||||||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|10|V/ns|||||||||||||
||TJ ≤150°C, RG= 10Ω|||||||||||||||
|**PD**|TC = 25°C|350|W|||||||||||||
|**TJ**<br>**TJM**||-55 ... +175<br>175|°C<br>°C|G|D|S||||||||(TAB)||
|**Tstg**||-55 ... +150|°C|||||||||||||
|**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s|300<br>2600|°C<br>°C|G = Gate<br>S = Source|G = Gate<br>S = Source|||||||D = Drain<br>TAB = Drain||||
|**Md**|Mounting torque<br>(TO-3P / TO-220)|1.13/10|Nm/lb.in.|||||||||||||
|**Weight**|TO-3P|5.5|g|||||||||||||
||TO-220|4|g|||||||||||||
||TO-263|3|g|**Features**||||||||||||



||||||||l|International standard packages|
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**||**Characteristic Values**||||l|Unclamped Inductive Switching (UIS)|
|(TJ= 25°C, unless otherwise specified)|||**Min.    Typ.**|**Min.    Typ.**|**Max.**|||rated|
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**|VGS = 0 V, ID= 250µA<br>VDS = VGS, ID= 250µA<br>VGS =±20 VDC, VDS= 0<br>VDS =  VDSS<br>VGS= 0 V|TJ= 150°C|150<br>3.0|-_~~~_~~|5.5<br>±100<br>25<br>250|V<br>V<br>nA<br>µA<br>µA|l Low package inductance<br>- easy to drive and to protect<br>**Advantages**<br>l<br>Easy to mount<br>l<br>Space savings||
|**RDS(on)**|VGS = 10 V, ID= 0.5 ID25|||33|40|mΩ|l|High power density|
||Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %|||||||



DS99154E(12/05) 

© 2006 IXYS All rights reserved 

## **IXTA 62N15P  IXTP 62N15P IXTQ 62N15P** 

|**Symbol**|**Symbol**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|**Test Conditions                                                Characteristic Values**|
|---|---|---|---|---|---|---|---|---|
|||(TJ= 25|= 25°C, unless otherwise specified)|C, unless otherwise specified)|||||
|**gfs**||VDS= 10 V; ID= 0.5 ID25, pulse test||**Min.**<br>14|**Typ.**<br>24<br>~~|~~||**Max.**|S|
|**Ciss**|||||2250|||pF|
|**Coss**<br>**Crss**||VGS= 0 V, VDS= 25 V, f = 1 MHz|||660<br>185|||pF<br>pF|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>RG= 10Ω(External)|||27<br>38<br>76<br>35<br>-|||ns<br>ns<br>ns<br>ns|
|**Qg(on)**|||||70|||nC|
|**Qgs**||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 I|= 0.5 ID25||20|||nC|
|**Qgd**|||||38|||nC|
|**RthJC**|||||||0.42°C/W||
|**RthCS**||(TO-3P)|||0.21|||°C/W|
|||(TO-220)|||0.25|||°C/W|
|**Source-Drain Diode                                                                Characteristic Values**|||**Source-Drain Diode                                                                Characteristic Values**|**Source-Drain Diode                                                                Characteristic Values**|||||
|||(TJ= 25°C, unless otherwise specified)||C, unless otherwise specified)|||||
|**Symbol**||**Test Conditions**||**Min.**|**Typ.**||**Max.**||
|**IS**||VGS= 0 V|||||62|A|
|**ISM**||Repetitive|||||150|A|
|**VSD**||IF= IS, VGS= 0 V,|||||1.5|V|
|**trr**<br>**QRM**||Pulse test, t≤300µs, duty cycle d≤2 %<br>IF= 25 A, -di/dt = 100 A/µs<br>VR= 100 V, VGS= 0 V|||150<br>2.0|||ns<br>µC|
||||||||||
|**TO-263 (IXTA) Outline**<br>;<br>A<br>FI<br>2<br>| 1<br>eo<br>|<br>—r<br>—<br>||||;<br>A<br>INCHES|;<br>A<br>MILLIMETERS||;<br>A|;<br>A|;<br>A|



## **TO-3P (IXTQ) Outline** 

## **TO-220 (IXTP) Outline** 

**==> picture [106 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>3 - Source Tab - Drain<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 

6,683,344 6,727,585 6,710,405B2 6,759,692 

6,710,463 6,771,478 B2 

**IXTA 62N15P  IXTP 62N15P IXTQ 62N15P** 

**==> picture [487 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics  Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>110<br>60 V GS = 10V<br>100<br>90 VGSGS = 10V<br>50<br>9V 80<br>9V<br>40 70<br>60<br>8V<br>30 50 8V<br>40<br>20<br>30<br>7V 7V<br>20<br>10<br>6V 10<br>6V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18<br>VD S - Volts VD S - VoltsD S - Volts - Volts<br> - AmperesI D  - AmperesI DD<br>**----- End of picture text -----**<br>


**==> picture [229 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
110<br>100<br>90 VGSGS = 10V<br>80<br>9V<br>70<br>60<br>50 8V<br>40<br>30<br>7V<br>20<br>10<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VD S - VoltsD S - Volts - Volts<br>I D - AmperesI DD<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ 150ºC** 

**Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** 

**==> picture [492 x 406] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8<br>60 VGS = 10V 2.6<br>          9V VGS = 10V<br>2.4<br>50<br>2.2<br>40 2<br>8V<br>1.8 ID = 62A<br>30 1.6<br>7V<br>1.4 ID = 31A<br>20<br>1.2<br>6V<br>1<br>10<br>0.8<br>5V<br>0 0.6<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 175<br>VD S - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to  Fig. 6. Drain Current vs. Case<br>0.5 ID25 Value vs. ID Temperature<br>4 70<br>TJ = 175ºC<br>3.5 60<br>3 50<br>2.5 40<br>2 V GS = 10V 30<br>1.5 VGS = 15V 20<br>1 10<br>TJ = 25ºC<br>0.5 0<br>0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175<br>I D - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>D<br>I<br>D S ( o n )<br>R<br> - Normalized<br> - Amperes<br>D<br>I<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXTA 62N15P  IXTP 62N15P IXTQ 62N15P** 

**Fig. 7. Input Admittance** 

**==> picture [230 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>105<br>90<br>75<br>60<br>45<br>30<br> TJ = 150ºC<br>15          25ºC<br>        -40ºC<br>0<br>5 6 7 8 9 10 11<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [231 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>150<br>120<br>90<br>60<br>TJ = 150ºC<br>30<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [232 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>f  = 1MHz<br>C iss<br>1000<br>Coss<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**==> picture [124 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>**----- End of picture text -----**<br>


**==> picture [231 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
36<br>32<br>28<br>24 TJ = -40ºC<br>       25ºC<br>20<br>     150ºC<br>16<br>12<br>8<br>4<br>0<br>0 15 30 45 60 75 90 105 120 135 150<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [227 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 VDS = 75V<br>8 ID = 31A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [234 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 175ºC<br>T C  = 25ºC<br>RDS(on) Limit<br>100<br>25µs<br>100µs<br>1ms<br>10 10ms<br>DC<br>1<br>1 10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXTA 62N15P  IXTP 62N15P IXTQ 62N15P** 

## **Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce** 

**==> picture [493 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
0 .4 5<br>0 .4 0<br>0 .3 5<br>0 .3 0<br>0 .2 5<br>0 .2 0<br>0 .1 5<br>0 .1 0<br>0 .0 5<br>1 1 0 1 0 0 1 0 0 0<br>Puls e W idth - millis ec onds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 



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