# MOSFET, P-CH, 100V, 52A, TO-263AA

![Product image](https://novapart.co/image/farnell:3771254/)

**URL**: https://novapart.co/products/IXTA52P10P./mosfet-p-ch-100v-52a-to-263aa
**SKU**: IXTA52P10P.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9200
**Stock**: 100+
**Lead Time**: 398 days (indicative)

## Description

Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:52A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | PolarP Series |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 52A |
| Drain Source On State Resistance | 0.05ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771254/)

## **PolarP[TM]** 

**IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P** 

## **Power MOSFETs** 

P-Channel Enhancement Mode Avalanche Rated 

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**----- Start of picture text -----**<br>
TO-263 AA (IXTA) TO-220AB (IXTP) D<br>G<br>G<br>S<br>D (Tab) G D S D (Tab) S<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**||**Maximum Ratings**||
|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C||-100|V|
|**VDGR**|TJ = 25°C to 150°C, R|C, RGS= 1MΩ|-100|V|
|**VGSS**|Continuous||±20|V|
|**VGSM**|Transient||±30|V|
|**ID25**|TC = 25°C||- 52|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM||-130|A|
|**IA**|TC = 25°C||- 52|A|
|**EAS**|TC = 25°C||1.5|J|
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, T|, TJ ≤150°C|10|V/ns|
|**PD**|TC = 25°C||300|W|
|**TJ**|||-55 ... +150|°C|
|**TJM**|||150|°C|
|**Tstg**|||-55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s||300|°C|
|**TSOLD**|Plastic body for 10s||260|°C|
|**Md**|Mounting Torque|(TO-3P,TO-220,TO-247)|1.13/10         Nm/lb.in.||
|**Weight**|TO-263||2.5|g|
||TO-220||3.0|g|
||TO-3P||5.5|g|
||TO-247||6.0|g|



**V =    - 100V DSS I =    - 52A D25 R ≤ 50m Ω DS(on)** 

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TO-3P (IXTQ)<br>G<br>D<br>S<br>Tab<br>**----- End of picture text -----**<br>


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TO-247 (IXTH)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

International Standard Packages Fast Intrinsic Diode Dynamic dv/dt Rated Avalanche Rated Rugged PolarP[TM] Process Low QG and Rds(on) Low Drain-to-Tab Capacitance Low Package Inductance 

## **Advantages** 

|(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**<br>~~—~~|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**<br>~~—~~|**Min.        Typ.      Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250μA<br>-100<br>~~|~~|~~—~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 2.0                      - 4.0     V<br>~~|~~|- 2.0                      - 4.0     V<br>~~|~~|- 2.0                      - 4.0     V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|~~|±<br>~~|=~~|±100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>-10<br>TJ= 125°C<br>-150|-10<br>-150<br>~~_~~<br>~~—~~|-10<br>μA<br>-150μA|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25,  Note 1<br>50|50<br>~~_~~<br>~~—~~|50 mΩ|



Easy to Mount Space Savings High Power Density 

## **Applications** 

High-Side Switching Push-Pull Amplifiers DC Choppers Current Regulators Automatic Test Equipment 

DS99912C(01/13) 

© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA52P10P  IXTQ52P10P IXTP52P10P  IXTH52P10P** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,   Note 1                    12|20|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|2845<br>1015<br>275|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3.3Ω(External)|22<br>29<br>38<br>22|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|60<br>17<br>23|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>(TO-3P)(TO-247)<br> <br>(TO-220)<br>|<br>0.21<br>0.50|0.42°C/W<br>°C/W<br>°C/W|



|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||- 52     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||- 200     A|
|**VSD**<br>IF= - 26A, VGS= 0V,  Note 1||- 3.5     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= - 26A, -di/dt = -100A/μs<br>VR= - 50V, VGS= 0V|120<br>0.53<br>- 8.9|ns<br>μC<br>A|



Note       1:  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA52P10P  IXTQ52P10P IXTP52P10P  IXTH52P10P** 

## **TO-247  Outline** 

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1 = Gate<br>2 = Dra i n<br>3 =  S ource<br>**----- End of picture text -----**<br>


## **TO-220 Outline** 

## **TO-3P Outline** 

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Pins: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **TO-263 Outline** 

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**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

**IXTA52P10P  IXTQ52P10P IXTP52P10P  IXTH52P10P** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>-55<br>-50 VGS = -10V<br>        - 9V<br>-45<br>-40<br>-35 - 8V<br>-30<br>-25<br>- 7V<br>-20<br>-15 - 6V<br>-10<br>-5 - 5V<br>0<br>0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-130<br>V GS = -10V<br>-110<br>- 9V<br>-90<br>- 8V<br>-70<br>-50 - 7V<br>-30<br>- 6V<br>-10 - 5V<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = - 26A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
-55 2.2<br>-50 V        - 9VGS = -10V 2.0 V GS = -10V<br>-45<br>1.8<br>-40 - 8V I D = - 52A<br>1.6<br>-35<br>-30 1.4 I D = - 26A<br>-25 - 7V 1.2<br>-20<br>- 6V 1.0<br>-15<br>0.8<br>-10<br>- 5V<br>-5 0.6<br>0 0.4<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 26A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.6 -60<br>2.4<br>VGS = -10V  -50<br>2.2<br>2.0 T J  = 125ºC -40<br>1.8<br>-30<br>1.6<br>1.4 -20<br>1.2<br>TJ = 25ºC -10<br>1.0<br>0.8 0<br>0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTA52P10P  IXTQ52P10P IXTP52P10P  IXTH52P10P** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>-70 32<br>T J = - 40ºC<br>-60 28<br>TJ = - 40ºC<br>          25ºC 24<br>-50        125ºC  25 º C<br>20<br>-40 125ºC ºC C<br>16<br>-30<br>12<br>-20<br>8<br>-10 4<br>0 0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 0 -10 -20 -30 -40 -50 -60 -70<br>VGS - Volts ID - AmperesD - Amperes - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-160 -10<br>-140 -9  V DS = - 50V<br>-8  I  D  = - 26A<br>-120  I G = -1mA<br>-7<br>-100<br>-6<br>-80 -5<br>-4<br>-60<br>TJ = 125ºC  -3<br>-40 TJ  = 25ºC -2<br>-20<br>-1<br>0 0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 5 10 15 20 25 30 35 40 45 50 55 60<br>VSD - Volts QG - NanoCoulombs<br> - Amperes  - Siemens<br>ID f s<br>g<br> - Volts<br> - Amperes GS<br>IS V<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>32<br>T J = - 40ºC<br>28<br>24<br>25 º C<br>20<br>125ºC ºC C<br>16<br>12<br>8<br>4<br>0<br>0 -10 -20 -30 -40 -50 -60 -70<br>ID - AmperesD - Amperes - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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10,000 - 1,000<br>f = 1 MHz<br>C iss<br>R DS(on)  Limit @ V GS  = -15V 100µs 25µs<br>1ms<br>- 100 10ms<br>Coss<br>1,000<br>- 10 DC, 100ms<br>Crss  TJ = 150ºC<br> TC = 25ºC<br> Single Pulse<br>100 - 1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 1 - 10 - 100<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA52P10P  IXTQ52P10P IXTP52P10P  IXTH52P10P** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

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1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC  / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_52P10P(B5)3-25-08-B 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixta52p10p/mosfet-p-ch-100v-52a-to-263aa/dp/3771254)
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