# Power MOSFET, N Channel, 1.5 kV, 3 A, 7.3 ohm, TO-263, Surface Mount

![Product image](https://novapart.co/image/farnell:3930416/)

**URL**: https://novapart.co/products/IXTA3N150HV/power-mosfet-n-channel-15-kv-3-a-73-ohm-to-263
**SKU**: IXTA3N150HV
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.3200
**Stock**: 100+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 |
| Drain Source Voltage Vds | 1.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 7.3ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930416/)

## **High Voltage Power MOSFET** 

## **IXTA3N150HV** 

**==> picture [119 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|V|=    1500V|
|DSS|
|I|=|3A|
|D25|
|R||7.3||
|DS(on)|

**----- End of picture text -----**<br>


N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

## **TO-263** 

**==> picture [352 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|S|—————_|ymbol|Test Conditions|Maximum Ratings|
|VDSS|TJ|= 25C to 150C|1500|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|1500|V|
|VGSS|Continuous|30|V|
|VGSM|Transient|40|V|
|ID25|TC|= 25C|3|A|
|IDM|TC|= 25C, Pulse Width Limited by TJM|9|A|
|IA|TC|= 25C|3|A|
|EAS|TC|= 25C|250|mJ|
|dv/dt|IS| IDM, VDD| VDSS,|TJ| 150C|5|V/ns|
|PD|TC|= 25C|250|W|
|TJ|- 55 ... +150|C|
|TJM|150|C|
|Tstg|- 55 ... +150|C|
|TL|Maximum Lead Temperature for Soldering                     300                   °C|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                               260|°C|
|Weight|2.5                       g|

**----- End of picture text -----**<br>


G S D (Tab) G  = Gate            D      =  Drain S  = Source        Tab   =  Drain 

## **Features** 

-   High Voltage package 

- Fast Intrinsic Diode 

- Avalanche Rated 

- Molding Epoxies meet UL 94 V-0 Flammability Classification 

- High Blocking Voltage 

## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

**==> picture [352 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Symbol|Test Conditions                                                Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.       Typ.      Max.|
|BVDSS|VGS|= 0V, ID = 250A|1500|||V|
|VGS(th)|VDS|= VGS, ID = 250A|2.5                        5.0     V|
|||
|IGSS|VGS|= 30V, VDS = 0V||||100|nA|
|IDSS|VDS|= VDSS, VGS = 0V|10|A|
|TJ = 125C                                        100|-|A|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|7.3||
|||||

**----- End of picture text -----**<br>


## **Applications** 

- High Voltage Power Supplies 

- Capacitor Discharge Applications 

- Pulse Circuits 

DS100523B(1/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXTA3N150HV** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**<br>~~—~~|**Min.      Typ.      Max.**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                     2.2          3.6|, Note 1                     2.2          3.6<br>~~—~~|S|
|**Ciss**<br>1375<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>90<br>**Crss**<br>30|1375<br>90<br>30<br>~~—~~|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br>21<br>**td(off)**<br>42<br>**tf**<br>25<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)|19<br>21<br>42<br>25|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>38.6<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>6.5<br>**Qgd**<br>19.0|38.6<br>6.5<br>19.0<br>~~a~~|nC<br>nC<br>nC|
|**RthJC**<br>0.50|0.50<br>~~a~~|0.50 C/W|



**TO-263  (HV) Outline** 

PIN:  1 - Gate 2 - Source 3 - Drain 

## **Source-Drain Diode** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|**Min.      Typ.       Max.**|
|**IS**<br>VGS= 0V|3     A|3     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|12     A|12     A|
|**VSD**<br>IF=  IS, VGS= 0V, Note 1|1.3     V|1.3     V|
|**SD**<br>SGS<br>**trr**<br>0.9                  μs<br>**IRM**<br>15.0<br>**QRM**<br>6.7<br>IF= ID= 0.5 • ID25, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|0.9                  μs<br>15.0<br>6.7|0.9                  μs<br>A<br> μC|



Note:        1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA3N150HV** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>4.5<br>VGS = 10V<br>4.0          7V<br>3.5 6V<br>3.0<br>2.5<br>5.5V<br>2.0<br>1.5<br>1.0<br>5V<br>0.5<br>4V<br>0.0<br>0 4 8 12 16 20 24 28 32<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [264 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Output Characteristics @ TJ = 125 [o] C<br>3.0<br>VGS = 10V<br>        6V<br>2.5<br>2.0<br>1.5 5V<br>1.0<br>0.5<br>4V<br>0.0<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [533 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs.  Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.<br>Junction Temperature  Drain Current<br>3.0 2.6<br>VGS = 10V  2.4 VGS = 10V<br>2.6<br>TJ = 125 [o] C<br>2.2<br>2.2 I  D  = 3A<br>2.0<br>I D = 1.5A<br>1.8<br>1.8<br>1.4 1.6<br>1.4<br>1.0<br>1.2 TJ = 25 [o] C<br>0.6<br>1.0<br>0.2 0.8<br>-50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance<br>3.5 3.0<br>VDS = 20V<br>3.0<br>2.5<br>2.5<br>2.0<br>2.0<br>1.5<br>1.5 TJ = 125 [o] C  25 [o] C<br>- 40 [o] C<br>1.0<br>1.0<br>0.5<br>0.5<br>0.0 0.0<br>-50 -25 0 25 50 75 100 125 150 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0<br>TC - Degrees Centigrade VGS - Volts<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXTA3N150HV** 

**==> picture [538 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>7 9<br>TJ = - 40 [o] C<br>6 V DS = 20V  8<br>7<br>5<br>6<br>25 [o] C<br>4 5<br>3 125 [o] C 4 TJ = 125 [o] C<br>3<br>2 TJ  = 25 [o] C<br>2<br>1<br>1<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>ID - Amperes VSD - Volts<br>Fig. 9. Gate Charge Fig. 10. Capacitance<br>10 10,000<br> VDS = 750V f = 1 MHz<br> I D = 1.5A<br>8  I G = 10mA    Ciss<br>1,000<br>6<br>4 Coss<br>100<br>2<br>Crss<br>0 10<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br>Fig. 11. Maximum Transient Thermal Impedance Fig. 12. Forward-Bias Safe Operating Area<br>1 10<br>R DS(on)  Limit<br>25μs<br>100μs<br>1<br>1ms<br>0.1<br>0.1 10ms<br>100ms<br> T J  = 150 [o] C DC<br> TC = 25 [o] C<br> Single Pulse<br>0.01 0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10 10 100 1,000 10,000<br>Pulse Width - Seconds VDS - Volts<br> - Siemens  - Amperes<br>gf s IS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br> - K / W<br>Z(th)JC  - AmperesID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_3N150(4N)5-02-16-B 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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