# Power MOSFET, N Channel, 1 kV, 3 A, 6 ohm, TO-263AA, Surface Mount

![Product image](https://novapart.co/image/farnell:3930293/)

**URL**: https://novapart.co/products/IXTA3N100D2/power-mosfet-n-channel-1-kv-3-a-6-ohm-to-263aa
**SKU**: IXTA3N100D2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.4000
**Stock**: 10+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | TO-263AA |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 6ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930293/)

**V =     1000V DSX I >     3A D(on) R  6  DS(on)** 

## **Depletion Mode IXTA3N100D2 MOSFET IXTP3N100D2** 

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D<br>G<br>TO-263 AA (IXTA)<br>S<br>**----- End of picture text -----**<br>


## **N-Channel** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|---|
|**VDSX**|TJ = 25C to 150C||1000|V|
|**VGSX**|Continuous||20|V|
|**VGSM**|Transient||30|V|
|**PD**|TC = 25C||125|W|
|**TJ**||- 55 ... +150|- 55 ... +150|C|
|**TJM**|||150|C|
|**Tstg**||- 55 ... +150|- 55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300||Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260        °C|1.6 mm (0.062in.) from Case for 10s                              260        °C|1.6 mm (0.062in.) from Case for 10s                              260        °C|1.6 mm (0.062in.) from Case for 10s                              260        °C|
|**Md**|Mounting Torque (TO-220)|1.13 / 10||Nm/lb.in.|
|**Weight**|**Weight**TO-263                                                                                       2.5                         g|TO-263                                                                                       2.5                         g|TO-263                                                                                       2.5                         g|TO-263                                                                                       2.5                         g|
|TO-220                                                                                          3.0                          g|TO-220                                                                                          3.0                          g|TO-220                                                                                          3.0                          g|TO-220                                                                                          3.0                          g|TO-220                                                                                          3.0                          g|



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G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


**TO-220AB (IXTP)** G ~~JF~~ D S D (Tab) G = Gate D       =  Drain S = Source Tab   =  Drain 

## **Features** 

- Normally ON Mode 

- International Standard Packages 

- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

## **Advantages** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVDSX**<br>VGS = - 5V, ID= 250A                                       1000||||V|
|**VGS(off)**<br>VDS = 25V, ID= 250A<br>- 2.5                      - 4.5     V|- 2.5                      - 4.5     V<br>~~|~~|- 2.5                      - 4.5     V|
|**IGSX**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~<br>~~||~~|100<br>nA|
|**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>5<br>TJ= 125C<br>50|5<br>50<br>~~=~~|5<br>A<br>50A|
|**RDS(on)**<br>VGS = 0V, ID= 1.5A,  Note 1<br>6|6<br>~~=~~<br>~~||~~|6<br>|
|**ID(on)**<br>VGS = 0V, VDS= 50V,  Note 1<br>3||A|



- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- Audio Amplifiers 

- Start-Up Circuits 

- Protection Circuits 

- Ramp Generators 

- Current Regulators 

- Active Loads 

DS100184E(4/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

**IXTA3N100D2 IXTP3N100D2** 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions                                            Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.      Typ.      Max.|TO-263 Outline|
|gfs|VDS = 30V, ID = 1.5A,  Note 1                          1.2          2.0|S|
|Ciss|1020|pF|
|Coss|VGS = -10V, VDS =  25V, f = 1MHz|68|pF|
|Crss|17|pF|
|t|27|ns|
|d(on)|Resistive Switching Times|1.|Gate|
|ttr|VGS =  5V, VDS = 500V, ID = 1.5A|67              34|nsns|2.|3.|4.|DraiS|Drainourcn|e|
|td(off)f|RG  = 3.3 (External)|40|ns|SideBottom|
|Q|37.5|nC|
|g(on)|
|Qgs|VGS = 5V, VDS = 500V, ID = 1.5A|4.4|nC|Dim.|Min.MillimeterMax.|Min.InchesMax.|
|Q|21.2|nC|A|4.06|4.83|.160|.190|
|gd|b|0.51|0.99|.020|.039|
|b2|1.14|1.40|.045|.055|
|RthJC|1.0|C/W|c|0.40|0.74|.016|.029|
|RthCS|TO-220                                                                        0.50|C/W|c2D|8.641.14|9.651.40|.340.045|.055.380|
|D1|8.00|8.89|.280|.320|
|E|9.65|10.41|.380|.405|
|E1|6.22|8.13|.270|.320|
|e|2.54|BSC|.100|BSC|
|Safe-Operating-Area Specification|L|14.61|15.88|.575|.625|
|Characteristic Values|L1|2.29|2.79|.090|.110|
|L2|1.02|1.40|.040|.055|
|Symbol|Test Conditions|Min.      Typ.        Max.|L3|1.27|1.78|.050|.070|
|L4|0|0.13|0|.005|
|SOA|VDS =  800V, ID = 94mA, TC = 75C, Tp = 5s       75|W|

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## **Source-Drain Diode** 

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|||||
|---|---|---|---|
|Symbol|Test Conditions                                             Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.      Typ.       Max.|
|VSD|IF =  3A, VGS = -10V,  Note 1|0.8             1.3     V|
|ItQRM                                                                                                                                                 rrRM|VIF =  3A, -di/dt = 100A/R = 100V, V                                                                             6.16                   μCGS = -10Vs|12.7                         A             970|ns|

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Note   1.  Pulse test, t  300s, duty cycle, d  2%. 

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TO-220 Outline<br>Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA3N100D2 IXTP3N100D2** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>3.0<br>VGS = 5V<br>         2V<br>2.5          1V<br>2.0 0V<br>1.5 -1V<br>1.0<br>0.5 - 2V<br>- 3V<br>0.0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>7<br>V GS = 5V<br>         2V<br>6<br>         1V<br>5<br>0V<br>4<br>3<br>-1V<br>2<br>1 - 2V<br>0<br>0 10 20 30 40 50<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125[o] C** 

**Fig. 4. Drain Current @ TJ = 25[o] C** 

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3.0 1.E+00<br>V GS = 5V  VGS = - 3.00V<br>          1V<br>1.E-01<br>2.5           0V   - 3.25V<br>1.E-02 - 3.50V<br>2.0<br>-1V - 3.75V<br>1.E-03<br>1.5<br>- 4.00V<br>1.E-04<br>1.0<br>- 2V 1.E-05 - 4.25V<br>0.5<br>1.E-06 - 4.50V<br>- 3V<br>0.0 1.E-07<br>0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts VDS - Volts<br>Fig. 5. Drain Current @ TJ = 100 [o] C Fig. 6. Dynamic Resistance vs. Gate Voltage<br>1.E+00 1.E+10<br>∆V DS = 700V - 100V<br>VGS = - 3.25V  1.E+09<br>1.E-01<br>- 3.50V<br>1.E+08<br>1.E-02 - 3.75V<br>1.E+07<br>- 4.00V<br>1.E-03 T J = 25 [o] C<br>1.E+06<br>- 4.25V<br>1.E-04 TJ = 100 [o] C<br>1.E+05<br>- 4.50V<br>1.E-05 1.E+04<br>0 100 200 300 400 500 600 700 800 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8<br>VDS - Volts VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br> - Ohms<br> - AmperesID RO<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXTA3N100D2 IXTP3N100D2** 

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Fig. 8. RDS(on) Normalized to ID = 1.5A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>2.6<br>2.4 V GS  = 0V 2.4  VGS = 0V<br>I D = 1.5A             5V<br>2.2<br>2.0<br>2.0<br>TJ = 125 [o] C<br>1.8<br>1.6<br>1.6<br>1.4<br>1.2<br>1.2 TJ = 25 [o] C<br>0.8 1.0<br>0.8<br>0.4 0.6<br>-50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>TJ - Degrees Centigrade ID - Amperes<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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Fig. 9. Input Admittance Fig. 10. Transconductance<br>4.5 4.0<br>4.0 VDS = 30V  VDS = 30V<br>3.5<br>TJ = - 40 [o] C<br>3.5<br>3.0<br>3.0<br>2.5 25 [o] C<br>2.5<br>TJ = 125 [o] C<br>2.0 125 [o] C<br>2.0          25 [o] C<br>       - 40 [o] C<br>1.5<br>1.5<br>1.0<br>1.0<br>0.5 0.5<br>0.0 0.0<br>-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>VGS - Volts ID - Amperes<br>Fig. 11. Breakdown and Threshold Voltages<br>vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>1.3 10<br>9 VGS = -10V<br>1.2 8<br>VGS(off) @ VDS = 25V<br>7<br>1.1 6<br>5<br>BVDSX @ VGS = - 5V<br>1.0 4<br>TJ = 125 [o] C<br>3 TJ = 25 [o] C<br>0.9 2<br>1<br>0.8 0<br>-50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>TJ - Degrees Centigrade VSD - Volts<br> - Amperes  - Siemens<br>ID gf s<br> - Normalized<br> - Amperes<br>BV / VGS(off) IS<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXTA3N100D2 IXTP3N100D2** 

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Fig. 13. Capacitance Fig. 14. Gate Charge<br>10,000 5<br>f = 1 MHz  4  V DS = 500V<br> I  D  = 1.5A<br>3<br> I G = 10mA<br>Ciss<br>2<br>1,000<br>1<br>0<br>-1<br>100 Coss<br>-2<br>-3<br>Crss<br>-4<br>10 -5<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40<br>VDS - Volts QG - NanoCoulombs<br>Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area<br>@ TC = 25 [o] C @ TC = 75 [o] C<br>10.00 10<br>RDS(on) Limit RDS(on) Limit<br>25μs<br>100μs 25μs<br>1.00 1 100μs<br>1ms<br>1ms<br>10ms<br>100ms 10ms<br>DC<br>0.10 0.1 100ms<br>DC<br>TJ = 150 [o] C T J  = 150 [o] C<br>T C  = 25 [o] C    TC = 75 [o] C<br>Single Pulse  Single Pulse<br>0.01 0.01<br>10.00 10 100 Fig. 17. Maximum Transient Thermal Impedance 1,000 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 17. Maximum Transient Thermal Impedance<br>2.00 .<br>1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br> - Amperes  - Amperes<br>ID ID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_3N100D2(3C) 7-15-14-B 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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