# MOSFET, P-CH, 150V, 36A, TO-263AA

![Product image](https://novapart.co/image/farnell:3771523/)

**URL**: https://novapart.co/products/IXTA36P15P-TRL./mosfet-p-ch-150v-36a-to-263aa
**SKU**: IXTA36P15P-TRL.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.8200
**Stock**: 10+

## Description

Chann; MOSFET, P-CH, 150V, 36A, TO-263AA; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:36A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | PolarP Series |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AA |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.11ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771523/)

## **PolarP[[TM]]** 

**PolarP[[TM]] IXTA36P15P Power MOSFETs IXTP36P15P IXTQ36P15P** P-Channel Enhancement Mode **IXTH36P15P** Avalanche Rated 

**V =    - 150V DSS I =    - 36A D25 R ≤ 110m Ω DS(on)** 

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TO-263 AA (IXTA) TO-220AB (IXTP)<br>G<br>S<br>G<br>D<br>D (Tab) S D (Tab)<br>**----- End of picture text -----**<br>


## **TO-3P (IXTQ)** 

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G<br>D<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


## **TO-247 (IXTH)** 

||||||||||**TO-247 (IXTH)**|
|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**||**Maximum Ratings**||||||**TO-247 (IXTH)**|
|**VDSS**|TJ = 25°C to 150°C|||- 150|- 150|||V||
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|||- 150|- 150|||V||
|**VGSS**|Continuous||||±20|||V||
|**VGSM**|Transient||||±30|||V||
|**ID25**|TC = 25°C||||- 36|||A||
|**IDM**|TC = 25°C, Pulse Width Limited by TJM||||- 90|||A|G  = Gate           D      =  Drain|
|**IA**|TC = 25°C||||- 36|||A|S  = Source       Tab   =  Drain|
|**EAS**|TC = 25°C||||1.5|||J||
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C||||10||V/ns|||
|**PD**|TC = 25°C||||300|||W|**Features**|
|**TJ**|||-55 ... +150|-55 ... +150||||°C||
|**TJM**<br>**Tstg**|||-55 ... +150|150<br>-55 ... +150||||°C<br>°C||
|**TL**|1.6mm (0.062 in.) from Case for 10s||||300|||°C||
|**TSOLD**<br>**Md**<br>**FC**|Plastic Body for 10s<br>260<br>Mounting Torque (TO-3P,TO-220 & TO-247)<br>1.13/10<br>Mounting Force (TO-263)<br>10..65/2.2..14.6|||||°C<br>Nm/lb.in.<br>N/lb.||||
|**Weight**|TO-263||||2.5|||g||
||TO-220<br>TO-3P||||3.0<br>5.5|||g<br>g|**Advantages**|
|TO-247|TO-247||||6.0|||g||
|**Symbol**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|||**Test Conditions                                               Characteristic Values**||||
|(TJ= 25°C, Unless Otherwise Specified)|C, Unless Otherwise Specified)|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**||||
|**BVDSS**|VGS = 0V, ID= - 250μA|- 150|- 150||~~=~~|||V|**Applications**|
|**VGS(th)**<br>**IGSS**<br>**IDSS**|VDS = VGS, ID= - 250μA<br>VGS =±20V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|- 2.5                    - 4.5    V<br>TJ= 125°C|- 2.5                    - 4.5    V<br>±<br>-10<br>- 250|- 2.5                    - 4.5    V<br>±<br>-10<br>- 250|- 2.5                    - 4.5    V<br>±100   nA<br>-10μA<br>- 250μA<br>~~—~~<br>:<br>~~—~~<br>~~[~~<br>:|||||
|**RDS(on)**|VGS = -10V, ID= 0.5 • ID25,  Note 1||110|110|110|110|mΩ|||



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G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

International Standard Packages Rugged PolarP[TM] Process Avalanche Rated Low Package Inductance Fast Intrinsic Diode Dynamic dv/dt Rated Low RDS(ON) and QG 

Low Drain-to-Tab Capacitance 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

## **Applications** 

: High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment : Current Regulators 

© 2013 IXYS CORPORATION, All Rights Reserved 

DS99791D(01/13) 

**IXTA36P15P  IXTP36P15P IXTQ36P15P  IXTH36P15P** 

|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                             Characteristic Values**<br>  <br>|
|---|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.**||**Typ.**|**Max.**|
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,   Note 1                    11||19|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>||3100<br>610<br>100|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3.3Ω(External)||21<br>31<br>36<br>15|ns<br>ns<br>ns<br>ns|
|||||
|**Qg(on)**<br>**Qgs**<br>**Qgd**|<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>|55<br>20<br>18|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>(TO-3P, TO-247)<br> <br>(TO-220)<br>||<br>0.21<br>0.50|0.42°C/W<br>°C/W<br>°C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                              Characteristic Values**|**Symbol**<br>**Test Conditions                                              Characteristic Values**|**Symbol**<br>**Test Conditions                                              Characteristic Values**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||- 36     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||-140     A|
|**VSD**<br>IF= -18A, VGS= 0V,  Note 1||- 3.3     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= -18A, -di/dt = -100A/μs<br>VR= - 75V, VGS= 0V|228<br>2.0<br>-17.6|ns<br>μC<br>A|



Note              1:  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA36P15P    IXTP36P15P IXTH36P15P    IXTQ36P15P** 

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TO-263 Outline<br>**----- End of picture text -----**<br>


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TO-220 Outline<br>**----- End of picture text -----**<br>


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1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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Pins: 1 - Gate<br>2 - Drain<br>            3 - Source<br>**----- End of picture text -----**<br>


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TO-3P Outline r a cL<br>y y!<br>- }<br>a a a +!<br>ele<br>Pins: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||o|||∅P<br> **1       2       3**<br>~~E~~<br>~~A~~2<br>~~eee~~ <br>~~HA ot =~~<br>~~s~~<br>—<br>=<br>|<br>~~~~ a~~<br>:|||||||||||||~~a~~t<br> th||||
|||||1|||||||||||||||||
||L||~~rT~~||||||||||||||||||
||||||||||||||||||||L||
||||||||||||||||||||||
|||||||5|||=|||||~~e~~<br>b~~2~~||||||||
|Pins:|||||1 - Gate|||1 - Gate|||||2 - Drain||||||||
||||||3 - Source|||3 - Source|||||||||||||
||Dim.|||||||Millimeter||||||||Inches|||||
|||||||||Min.|||||Max.|||Min.||Max.|||
|||A||||||4.7|||||5.3|||.185||.209|||
|||A1||||||2.2|||||2.54|||.087||.102|||
|||A2||||||2.2|||||2.6|||.059||.098|||
|||b||||||1.0|||||1.4|||.040||.055|||
|||b1||||||1.65|||||2.13|||.065||.084|||
|||b~~2~~||||||2.87|||||3.12|||.113||.123|||
|||C||||||.4|||||.8|||.016||.031|||
|||D|||||20.80||||||21.46|||.819||.845|||
|||E|||||15.75||||||16.26|||.610||.640|||
|||e||||||5.20|||||5.72||0.205||0.225||||
|||L|||||19.81||||||20.32|||.780||.800|||
|||L1|||||||||||4.50|||||.177|||
|||∅P||||||3.55|||||3.65|||.140||.144|||
|||Q||||||5.89|||||6.40||0.232||0.252||||
|||R||||||4.32|||||5.49|||.170||.216|||



© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA36P15P  IXTP36P15P IXTQ36P15P  IXTH36P15P** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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-40<br>VGS = -10V<br>-35 - 9V<br>-30 - 8V<br>-25<br>-7V<br>-20<br>-15<br>- 6V<br>-10<br>-5<br>- 5V<br>0<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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**----- Start of picture text -----**<br>
-100<br>-90 VGS = -10V<br>-80<br>- 9V<br>-70<br>-60<br>- 8V<br>-50<br>-40<br>- 7V<br>-30<br>-20<br>- 6V<br>-10<br>0<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

## **Fig. 4. RDS(on) Normalized to ID = -18A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
-40 2.4<br>V GS = -10V<br>-35        - 9V  VGS = -10V<br>2.0<br>-30<br>- 8V I D = - 36A<br>-25<br>1.6<br>- 7V I D = -18A<br>-20<br>1.2<br>-15<br>- 6V<br>-10<br>0.8<br>-5<br>- 5V<br>0 0.4<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = -18A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>3.0 -40<br>VGS = -10V  -35<br>2.6<br> TJ = 125ºC<br>-30<br>2.2<br>-25<br>1.8 -20<br>-15<br>1.4<br> TJ = 25ºC<br>-10<br>1.0<br>-5<br>0.6 0<br>0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTA36P15P    IXTP36P15P IXTH36P15P    IXTQ36P15P** 

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Fig. 7. Input Admittance<br>-65<br>-55<br>T J = - 40ºC<br>          25ºC<br>-45         125ºC<br>-35<br>-25<br>-15<br>-5<br>-3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -8.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-100<br>-90<br>-80<br>-70<br>-60<br>-50<br>-40 T J = 125ºC<br>-30 T J   = 25ºC<br>-20<br>-10<br>0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
35<br>TJ = - 40ºC<br>30<br>25<br>25ºC<br>20<br>125ºC<br>15<br>10<br>5<br>0<br>0 -10 -20 -30 -40 -50 -60 -70 -80<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
-10<br>-9  VDS = - 75V<br> I D = -18A<br>-8<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 - 100<br>R DS(on)  Limit<br>25µs  TJ = 150ºC<br> TC = 25ºC<br>Ciss 100µs  Single Pulse<br>1,000<br>1ms<br>Coss - 10<br>100<br>Crss 10ms<br>f = 1 MHz  100ms<br>DC<br>10 - 1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 10 - 100 - 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION, All Rights Reserved 

## **IXTA36P15P  IXTP36P15P IXTQ36P15P  IXTH36P15P** 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_36P15P(B5)3-26-08-B 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

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