# Power MOSFET, N Channel, 1 kV, 1.6 A, 10 ohm, TO-263HV, Surface Mount

![Product image](https://novapart.co/image/farnell:3930414/)

**URL**: https://novapart.co/products/IXTA1R6N100D2HV/power-mosfet-n-channel-1-kv-16-a-10-ohm-to-263hv
**SKU**: IXTA1R6N100D2HV
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2500
**Stock**: 200+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | TO-263HV |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 10ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930414/)

## **High Voltage Depletion Mode Power MOSFET** 

|**High Voltage**|**High Voltage**|**IXTA1R6N100D2HV**|**IXTA1R6N100D2HV**|**IXTA1R6N100D2HV**|**IXTA1R6N100D2HV**|**VDSX**|**=     1000V**|**=     1000V**|**=     1000V**|
|---|---|---|---|---|---|---|---|---|---|
|**Depletion Mode**||||||**ID(on)**|**>     1.6A**|**1.6A**||
|**Power MOSFET**<br>**N-Channel**||**G**<br>**D**<br>**S**<br>~~4~~||||**RDS(on)** <br>**TO-263HV**<br>**(IXTA..HV)**|**     10**<br>G|**10**<br>S<br>~~S~~||
|**Symbol**|**Test Conditions**|**Maximum Ratings**||||||D (Tab)||
|**VDSX**|TJ = 25C to 150C|1000|V|||||||
|**VGSX**|Continuous|20|V|||G  = Gate            D      =  Drain|G  = Gate            D      =  Drain|G  = Gate            D      =  Drain|G  = Gate            D      =  Drain|
|**VGSM**|Transient|30|V|||S  = Source        Tab   =  Drain|||S  = Source        Tab   =  Drain|
|**PD**|TC = 25C|100|W|||||||
|**TJ**||- 55 ... +150|C|||||||
|**TJM**||150|C|||||||
|**Tstg**||- 55 ... +150|C|||||||
|**TL**|Maximum Lead Temperature for Soldering                     300||°C|||**Features**||||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                               260||°C|||||||
|**Md**<br>**Weight**|Mounting Force                                        10..65 / 2.2..14.6<br>**Weight**2.5                         g|Mounting Force                                        10..65 / 2.2..14.6<br>2.5                         g|N/lb<br>2.5                         g|||•High Voltage package<br>•  High Blocking Voltage<br>•  Normally ON Mode||||



- Normally ON Mode 

- International Standard Package 

- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

## **Advantages** 

- Easy to Mount 

- Space Savings 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVDSX**<br>VGS = - 5V, ID= 250A                                       1000||||V|
|**VGS(off)**<br>VDS = 25V, ID= 100A<br>- 2.5                      - 4.5     V|- 2.5                      - 4.5     V<br>~~—~~|- 2.5                      - 4.5     V|
|**IGSX**<br>VGS =20V, VDS= 0V<br>|<br>~~—~~|100<br>nA|
|**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>2<br>TJ= 125C<br>25|2<br>25<br>~~-~~|2<br>A<br>25A|
|**RDS(on)**<br>VGS = 0V, ID= 0.8A,  Note 1|10<br>~~-~~~|10|
|**ID(on)**<br>VGS = 0V, VDS= 50V,  Note 1<br>1.6|~~~~~|A|



- High Power Density 

## **Applications** 

- Audio Amplifiers 

- Start-Up Circuits 

- Protection Circuits 

- Ramp Generators 

- Current Regulators 

- Active Loads 

DS100778B(11/19) 

© 2019 IXYS CORPORATION,  All Rights Reserved 

**IXTA1R6N100D2HV** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 30V, ID= 0.8A,  Note 1                        0.65|1.10|S|
|**Ciss**<br> <br>**Coss**<br>VGS= -10V, VDS=  25V, f = 1MHz<br> <br>**Crss**<br>|645<br>43<br>11|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS=5V, VDS= 500V, ID= 0.8A<br>RG= 5(External)|27<br>65<br>34<br>41|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 5V, VDS= 500V, ID= 0.8A<br> <br>**Qgd**<br>|27.0<br>1.6<br>13.5|nC<br>nC<br>nC|
|**RthJC**<br>||1.25C/W|



## **Safe-Operating-Area Specification** 

|**Safe-Operating-Area Specification**|**Safe-Operating-Area Specification**|**Safe-Operating-Area Specification**|
|---|---|---|
|**Characteristic Values**<br><br> <br>|||
|**Symbol**<br>**Test Conditions**<br>**Min.**|**Typ.**|**Max.**|
|**SOA**<br>VDS= 800V, ID= 75mA, TC= 75C, Tp = 5s       60||W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>  <br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**||**Typ.**|**Max.**|
|**VSD**<br>IF= 1.6A, VGS= -10V,  Note 1||0.8|1.3     V|
|**trr**<br>**IRM**<br>**Q**|<br>   <br>  <br>IF= 1.6A, -di/dt = 100A/s<br>VR= 100V, VGS= -10V|970<br>9.96<br>4.80|ns<br>A<br>μC|
|**RM**||||



Note  1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA1R6N100D2HV** 

**==> picture [264 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>1.6<br>VGS = 5V<br>1.4          1V<br>         0V<br>1.2<br>1.0<br>-1V<br>0.8<br>0.6<br>0.4<br>- 2V<br>0.2<br>- 3V<br>0.0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [264 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>4.0<br>VGS = 5V<br>3.5          2V<br>        1V<br>3.0<br>0V<br>2.5<br>2.0<br>-1V<br>1.5<br>1.0<br>- 2V<br>0.5<br>- 3V<br>0.0<br>0 10 20 30 40 50 60 70 80<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [535 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125 [o] C Fig. 4. Drain Current @ TJ = 25 [o] C<br>1.6 1E-01<br>VGS = 5V<br>1.4           1V 1E-02 VGS = - 3.25V<br>          0V<br>- 3.50V<br>1.2 1E-03<br>- 3.75V<br>-1V<br>1 1E-04<br>- 4.00V<br>0.8 1E-05<br>- 4.25V<br>0.6 - 2V 1E-06<br>- 4.50V<br>0.4 1E-07<br>- 4.75V<br>0.2 1E-08<br>- 3V<br>0 1E-09<br>0 4 8 12 16 20 24 28 32 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 5. Drain Current @ TJ = 100[o] C** 

**==> picture [254 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E-01<br>1.E-02 VGS = - 3.50V<br>- 3.75V<br>1.E-03<br>- 4.00V<br>1.E-04 - 4.25V<br>1.E-05 - 4.50V<br>- 4.75V<br>1.E-06<br>1.E-07<br>0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 6. Dynamic Resistance vs. Gate Voltage** 

**==> picture [263 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+12<br>1.E+11 ∆V DS  = 700V - 100V<br>1.E+10<br>1.E+09<br>1.E+08 TJ = 25 [o] C<br>1.E+07<br>TJ = 100 [o] C<br>1.E+06<br>1.E+05<br>1.E+04<br>-4.8 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2<br>VGS - Volts<br> - Ohms<br>O<br>R<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION,  All Rights Reserved 

## **IXTA1R6N100D2HV** 

**==> picture [533 x 642] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. RDS(on) Normalized to ID = 0.8A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>2.6 2.6<br>V GS  = 0V 2.4  VGS = 0V<br>2.2 I  D  = 0.8A  2.2             5V<br>2.0<br>1.8 TJ = 125 [o] C<br>1.8<br>1.4 1.6<br>1.4<br>1.0<br>1.2<br>TJ = 25 [o] C<br>1.0<br>0.6<br>0.8<br>0.2 0.6<br>-50 -25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 9. Input Admittance Fig. 10. Transconductance<br>2.5 2.2<br>VDS = 30V  2.0 VDS = 30V<br>1.8 TJ = - 40 [o] C<br>2.0<br>1.6<br>1.4 25 [o] C<br>1.5<br>1.2<br>125 [o] C<br>1.0<br>TJ = 125 [o] C<br>1.0<br>         25 [o] C 0.8<br>       - 40 [o] C<br>0.6<br>0.5 0.4<br>0.2<br>0.0 0.0<br>-4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 1.5 2 2.5<br>VGS - Volts ID - Amperes<br>Fig. 11. Breakdown and Threshold Voltages<br>Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>vs. Junction Temperature<br>1.3 5<br>V GS = -10V<br>1.2 4<br>VGS(off) @ VDS = 25V<br>1.1 3<br>BVDSX @ VGS = - 5V<br>1.0 2<br>TJ = 125 [o] C<br>0.9 1 T J = 25 [o] C<br>0.8 0<br>-50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>TJ - Degrees Centigrade VSD - Volts<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br> - Siemens<br> - AmperesID gf s<br> - Normalized<br> - Amperes<br>BV / VGS(off) IS<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXTA1R6N100D2HV** 

**==> picture [532 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Capacitance Fig. 14. Gate Charge<br>10,000 5<br>f = 1 MHz  4  VDS = 500V<br> I  D  = 0.8A<br>3<br>1,000 Ciss  I G = 1mA<br>2<br>1<br>100 Coss 0<br>-1<br>-2<br>10<br>Crss -3<br>-4<br>1 -5<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25<br>VDS - Volts QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**==> picture [538 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area<br>@ TC = 25 [o] C @ TC = 75 [o] C<br>10 10<br>RDS(on) Limit RDS(on) Limit<br>25μs<br>100μs<br>1 1 100μs<br>1ms<br>1ms<br>10ms<br>100ms 10ms<br>0.1 0.1<br>DC 100ms<br>T J  = 150 [o] C T J = 150 [o] C DC<br>TC = 25 [o] C    T C  = 75 [o] C<br>Single Pulse<br>Single Pulse  Fig. 17. Maximum Transient Thermal Impedance<br>10.00<br>0.01 0.01<br>1 0 100 1,000 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 17. Maximum Transient Thermal Impedance<br>hvjv<br>2.00<br>1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - AmperesID  - AmperesID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_1R6N100D2(2C)8-24-09 

**IXTA1R6N100D2HV** 

**==> picture [185 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-263HV Outline<br>E A<br>L1 C2 =<br>r—]] | D1 | |<br>b D H D2 3<br>1 | 2 A1 E1<br>L4<br>L3<br>b2 ieit e1 b GAUGEPLANEc 7 an 0.43 [11.0] |<br>0 [o] 8 [o]<br>0.34 [8.7]<br>A2 0.20 [5.0]<br>e2 0.66 [16.7]<br>1 = Gate La 0.12 [3.0]<br>2 = Source<br>3 = Drain 0.10 [2.5] 0.06 [1.6]<br>MINIMUM PCB FOOT PRINT LAYOU = T<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

**IXTA1R6N100D2HV** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2019 IXYS CORPORATION,  All Rights Reserved 



## Links

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- [Supplier page](https://es.farnell.com/littelfuse/ixta1r6n100d2hv/mosfet-1-6a-1kv-100w-to-263hv/dp/3930414)
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