# Power MOSFET, N Channel, 600 V, 38 A, 0.07 ohm, ISOPLUS-247, Through Hole

![Product image](https://novapart.co/image/farnell:1300130/)

**URL**: https://novapart.co/products/IXKR40N60C/power-mosfet-n-channel-600-v-38-a-007-ohm-isoplus
**SKU**: IXKR40N60C
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €9.6100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 280W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 280W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.07ohm |
| Transistor Case Style | ISOPLUS-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 38A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 3.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1300130/)

**IXKR 40N60C** 

## **CoolMOS[™ 1) ] Power MOSFET in ISOPLUS247[TM] Package** 

**V I R** DSS D25 DS(on) **600  V 38 A 70 m Ω** ~~tH~~ 

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 

Preliminary data 

**==> picture [218 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
D ISOPLUS 247 [TM]<br>         E153432<br>G<br>G<br>D<br>S S Isolated base<br>G = Gate       D = Drain       S = Source<br>**----- End of picture text -----**<br>


## **MOSFET** 

## **Features** 

- ISOPLUS247™ package with DCB Base 

|**Symbol**|**Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**<br>**VGS**<br>**ID25**<br>**ID90**|TVJ= 25°C to 150°C<br>TC= 25°C<br>TC= 90°C|600<br>±20<br>38<br>25|V<br>V<br>A<br>A|
|**dv/dt**|VDS< VDSS; IF ≤50A;⎮diF/dt⎮≤100A/µs<br>TVJ= 150°C|6|V/ns|
|**EAS**<br>**EAR**|ID= 10 A; L = 36 mH; TC= 25°C<br>ID= 20 A; L =   5 µH; TC= 25°C|1.8<br>1|J<br>mJ|



- Electrical isolation towards the heatsink 

- Low coupling capacitance to the heatsink for reduced EMI 

- High power dissipation 

- High temperature cycling capability of chip on DCB 

- JEDEC TO-247AD compatible 

- Easy clip assembly 

- fast CoolMOS[™ 1)] power MOSFET 3[rd] generation 

- High blocking capability 

- Low on resistance 

- Avalanche rated for unclamped inductive switching (UIS) 

- Low thermal resistance due to reduced chip thickness 

- Enhanced total power density 

|**min.**|**min.**|**typ.**|**max.**|
|---|---|---|---|
|**RDSon**<br>VGS= 10 V; ID= ID90||~~:~~|70 mΩ|
|**VGSth**<br>VDS= 20 V; ID= 3 mA;<br>2.1||~~:~~|3.9<br>V|
|**IDSS**<br>VDS= VDSS; VGS= 0 V; TVJ=   25°C<br>TVJ= 125°C||60<br>~~:~~|25<br>µA<br>µA|
|**IGSS**<br>VGS= ±20 V; VDS= 0 V||~~:~~|100<br>nA|
|||~~-~~|~~-~~|
|**Qg**<br>**Qgs**<br>**Qgd**<br>~~|~~|VGS= 10 V; VDS= 350 V; ID= 50 A<br>~~|~~|250<br>25<br>120<br>~~|-~~|nC<br>nC<br>nC<br>~~-~~|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>VGS= 10 V; VDS= 380 V;<br>ID= 50 A; RG= 1.8Ω<br>~~|~~||20<br>30<br>110<br>10<br>~~|-~~|ns<br>ns<br>ns<br>ns|
|**VF**<br>(reverse conduction) IF= 20 A; VGS= 0 V<br>||0.9<br>~~-~~|1.1<br>V|
|**RthJC**|||0.45 K/W|



- Switched mode power supplies (SMPS) 

IXYS reserves the right to change limits, test conditions and dimensions. 

20080523a 

© 2008 IXYS All rights reserved 

1 - 2 

## **IXKR 40N60C** 

|**Component**||||||
|---|---|---|---|---|---|
|**Symbol**|**Conditions**|**Maximum Ratings**||||
|**VISOL**|IISOL ≤1 mA; 50/60 Hz||2500||V~|
|**TVJ**||-40...+150|||°C|
|**Tstg**||-40...+125|||°C|
|**TL**|1.6 mm from case for 10 s||300||°C|
|**FC**|mounting force with clip|20 ... 120|||N|
|**Symbol**|**Conditions**|**Characteristic Values**||||
|||**min.**|**typ.**|**max.**||
|**Cp**|coupling capacity between shorted||30||pF|
||pins and mounting tab in the case|||||
|**RthCH**|with heatsink compound||0.25||K/W|
|**Weight**|||6||g|



**==> picture [102 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
ISOPLUS247 [TM]  OUTLINE<br>**----- End of picture text -----**<br>


The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. 

20080523a 

© 2008 IXYS All rights reserved 

2 - 2 



## Links

- [View this product on Novapart](https://novapart.co/products/IXKR40N60C/power-mosfet-n-channel-600-v-38-a-007-ohm-isoplus)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixkr40n60c/mosfet-n-isoplus247/dp/1300130)
---

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